JP2002190452A - Method for manufacturing semiconductor device, and apparatus and method for heat treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for activating impurity elements added to a semiconductor film in the heat treatment of short time, without deforming a board and gettering the semiconductor film, in a manufacturing step of a semiconductor device using the board having a low heat resistance, such as a glass or the like, and to provide an apparatus for heat treating capable of such heat treating. SOLUTION: The method for heat treating is a method of heat treating by irradiating a light emitted from a lamp light source. A light-irradiating time interval per light source is 0.1 to 20 s, and the light from the light source is irradiated a plurality number of times. A light is irradiated from the light source, so that a holding time of the highest temperature of a region to be irradiated is 0.5 to 5 s. Further, accompanying the light source flashings, the supply amount of refrigerant is increased or decreased, so as to enhance heat treatment effects of the film, and to prevent damages to the board due to heat.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device, a heat treatment apparatus, and a heat treatment method using the apparatus. In particular, heat treatment for recrystallizing and activating a semiconductor film obtained by crystallizing an amorphous semiconductor film by ion implantation or ion doping, and for gettering a metal element remaining in the semiconductor film. The present invention relates to a method and a heat treatment apparatus. Further, the present invention relates to a method for manufacturing a semiconductor device using such a heat treatment method.

[0002]

2. Description of the Related Art A crystalline semiconductor film formed at a process temperature of 600 ° C. or less is also called low-temperature polysilicon because silicon is a main raw material. A first use of the crystalline semiconductor film is to use the TFT as an active layer for forming a channel formation region, a source or drain region, or the like of a thin film transistor (hereinafter, referred to as a TFT). A technique of forming a liquid crystal display device and manufacturing a liquid crystal display device using the same has attracted special attention.

[0003] The TFT manufacturing technology using the crystalline semiconductor film is characterized by using a laser annealing method, an ion doping method, or the like. With these technologies, an n-channel type and a p-channel type are formed on a large glass substrate. And it is possible to form an integrated circuit having a CMOS structure.

However, a TFT is not only an n-type or p-type impurity region forming source and drain regions, but also a TFT.
LDD to reduce leakage current and stabilize characteristics
(Lightly Doped Drain) must be formed. Further, in order to control the threshold voltage, it is necessary to dope an impurity element of one conductivity type. These controls are performed by an ion doping method in which all the generated ion species are acceleratedly implanted without mass separation and a subsequent activation treatment.

Methods for activating impurities after doping include furnace annealing, laser annealing, and RTA.
(Rapid Thermal Annealing) or the like can be adopted. A relatively high dose of 10 ¹⁵ /
The source and drain regions where the implantation is performed at about cm ² require a certain temperature and time in order to activate the added impurity element and increase the conductivity. Since the laser annealing method melts a semiconductor film, its controllability and reproducibility pose a problem, and it is considered that it is difficult to introduce it into a mass production process. Furnace annealing is considered to be compatible with the mass production process because of batch processing, but there is a problem that if the processing temperature is lowered, the activation rate decreases and the processing time becomes longer.

In the crystallization technique, the laser annealing method enables the formation of a crystalline semiconductor film on a glass substrate, but since the reaction is in a non-equilibrium state, the crystal has a small grain size and many defects are inherent. . The direct control factors in the laser annealing method are very limited, such as the energy density of laser light, the number of irradiation times, and the substrate heating temperature, and the applicable range is also limited. For example, the energy density is set to an appropriate range of 250 to 400 mJ / cm ² ,
Outside this range, only an amorphous structure can be obtained.

On the other hand, as a technique for obtaining high-quality crystals, a technique of adding a metal element for crystallization is disclosed in Japanese Patent Laid-Open No.
No. 183540. Nickel, palladium, lead and the like are used as the metal element. The addition can be performed by various methods such as a plasma treatment, an evaporation method, an ion implantation method, a solution coating method, and a sputtering method.
The heat treatment for crystallization can be performed by heat treatment at 500 to 600 ° C., preferably 550 ° C., for 4 hours. However, in this method, gettering is often required because the metal element remains in the crystalline semiconductor film. Many of the metal elements are known to form a deep level in a forbidden band in a semiconductor, become a lifetime killer, and increase a leak current in a junction.

[0008] Gettering using phosphorus is a method by which the metal element can be segregated in the phosphorus-added region.
A furnace annealing furnace is used for gettering, and typically requires heat treatment at 450 to 600 ° C. for about 12 hours. Thereby, the metal element can be segregated in the phosphorus-added region.

[0009]

One of the most promising fields of application of TFTs manufactured in this way is the field of flat panel displays typified by liquid crystal display devices. In this field, in order to improve productivity, the size of a substrate in a manufacturing process is required to be increased.
Its size varies, but as an example 960 × 110
0 mm ² is raised, and one side reaches 1000 mm. Such a requirement is not limited to a liquid crystal display device, and is a common problem in a large-area integrated circuit formed using a TFT on a glass substrate.

To improve the productivity, it is necessary to reduce the number of TFT manufacturing steps and the processing time. In that case,
It is considered that the production efficiency cannot be improved by the furnace annealing apparatus on the premise of the batch processing. Increasing the size of the furnace annealing apparatus not only increases the installation area, but also increases the power consumption for uniformly heating the inside of a large-capacity furnace.

Considering the productivity, the RTA method is considered to be a suitable method. The RTA method can be heated to a high temperature in a short time, and has a potentially higher processing capability than the furnace annealing method even in a single-wafer method. But,
Instead of shortening the heating time, it is necessary to increase the heating temperature, and to obtain a desired effect in the activation or gettering treatment, it is necessary to heat the glass to a temperature higher than the strain point and further the softening point. For example, if only a heat treatment is performed at 800 ° C. for 60 seconds to perform the gettering process, the glass substrate is bent and deformed by its own weight.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems, and in a process of manufacturing a semiconductor device using a substrate having low heat resistance such as glass, a semiconductor film can be formed by a short heat treatment without deforming the substrate. A method for performing heat treatment necessary for activation of an added impurity element and for gettering a semiconductor film, a heat treatment apparatus capable of performing such heat treatment, and a method for manufacturing a semiconductor device using the heat treatment apparatus are provided. The purpose is to do.

[0013]

SUMMARY OF THE INVENTION In view of the above-mentioned problems, the present invention relates to a heat treatment for gettering and activating a semiconductor film formed on a substrate having low heat resistance such as glass and the like. Such as a method that can be performed in a short time without causing damage by heat,
A heat treatment apparatus for that purpose is provided.

The mechanism of gettering of a metal element by phosphorus added without using mass separation by using phosphine by an ion doping method on a semiconductor film formed on a substrate can be estimated as follows. When phosphorus is selectively added to the semiconductor film, the added region (gettering region)
Becomes amorphous. Next, the gettering region is crystallized from amorphous by heating the semiconductor film. At this time, the phosphorus added to the gettering region comes to be located between lattices formed by the semiconductor film. In addition, a region to which phosphorus is not added by the heat treatment (a region to be gettered)
, Compounds made by metal elements (called metal compounds)
Is broken (this state is called release). Subsequently, the metal element moves (this state is called diffusion), and the metal element and phosphorus combine (this state is called capture). It is considered that the metal element can be removed or reduced in the gettering region in this manner.

In the gettering, the release of the metal element from the metal compound in the gettered region, the diffusion of the metal element,
There is a process of capturing metal elements by phosphorus in the gettering region. The release energy of the metal element is estimated to be about several hundred degrees Celsius, and it is known that the metal element is easily released by heat treatment at about 500 ° C. On the other hand, when the heat treatment is performed at a high temperature, the diffusion rate of the metal element increases, but the result that the metal element is hard to getter is obtained. For this reason, at high temperatures, phosphorus is interstitial,
It is thought that it becomes impossible to combine with the metal element.

Therefore, in order to improve the gettering effect, it is necessary to promote the diffusion of the metal element while performing the heat treatment at a low temperature. The method is characterized in that the region to be gettered is heated to a temperature higher than that of the gettering region by repeating the radiation of the lamp light source in a pulsed manner. For that purpose, the structure of the gettering region and the region to be gettered is devised, and a light absorbing film is formed on the gettering region. The light absorbing film may be a gate electrode. For example, a tantalum nitride film can be used as a part of the gate electrode. Then, the tantalum nitride film is heated by receiving the radiation from the lamp light source.

By heating the region to be gettered to a relatively high temperature, the metal compound is easily released and can be diffused into the gettering region. Then, the phosphorus reaches the gettering region to which phosphorus has been added and can be segregated in that region. At this time, a high gettering effect can be obtained by heating so that the phosphorus is not taken in between the lattices of the silicon network and bonded in four coordination, that is, the activation is not so advanced.

The reason for heating the semiconductor film to be processed by irradiating the radiation of the lamp light source in a pulsed manner a plurality of times is that the gettering region is heated before the heat is transmitted to the glass substrate or the gettering region. This is to enable rapid heating and rapid cooling. Of course, it is possible to use laser light as a light source. However, in consideration of the optimum irradiation time for activation and gettering, it is preferable to use a halogen lamp or the like as a light source because the irradiation area can be easily increased in area. . The present invention is characterized in that gettering and activation are performed in this manner.

As described above, the heat treatment method of the present invention is a heat treatment method for heating an object to be processed by irradiating pulsed radiation of a lamp light source in a plurality of times. Radiation lasts for 0.1 to 20 seconds, and is characterized by repeating the radiation from the lamp light source a plurality of times. Alternatively, it is characterized in that the radiation from the lamp light source is repeated in a pulse-like manner so that the maximum temperature holding time of the object to be processed is 0.5 to 5 seconds. Further, the present invention is characterized in that by increasing or decreasing the supply amount of the coolant in accordance with the blinking of the lamp light source, the heat treatment effect of the semiconductor film to be processed is enhanced and the substrate is prevented from being damaged by heat.

The heat treatment apparatus of the present invention that enables such a heat treatment method includes a lamp light source, a power supply for causing the lamp light source to blink in a pulse shape, a stage on which a substrate is mounted, and radiation from the lamp light source. A processing chamber capable of irradiating the processing object,
Means for supplying a refrigerant to the processing chamber and increasing or decreasing the supply amount.

As a lamp light source, a halogen lamp, a metal halide lamp, a xenon lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, an excimer lamp and the like can be applied.

Another configuration of the heat treatment apparatus of the present invention is as follows.
A lamp light source, a power supply for causing the lamp light source to blink in a pulse shape, a stage on which a substrate is mounted, a processing chamber capable of irradiating the object to be processed with radiation from the lamp light source, and It is characterized by comprising movable transport means and means for supplying a refrigerant to the processing chamber in accordance with the blinking of the lamp light source, and for increasing or decreasing the supply amount.

The method for manufacturing a semiconductor device of the present invention using the above-described heat treatment method includes a step of forming a semiconductor film on a light-transmitting substrate, a step of forming a second insulating film on the semiconductor film, (2) forming a light-absorbing first conductive film on the insulating film, forming a light-reflective second conductive film on the first conductive film, and doping the semiconductor film with an impurity of one conductivity type; Forming a semiconductor region of one conductivity type, and irradiating pulsed radiation emitted from a lamp light source a plurality of times from the light-transmitting substrate side to activate the semiconductor region of one conductivity type. Features.

In another configuration, a first step of forming an amorphous semiconductor film on one main surface of a light-transmitting substrate and a step of adding a metal element to the amorphous semiconductor film and then crystallizing the amorphous semiconductor film are performed. A second step of forming a semiconductor film, and above the crystalline semiconductor film,
A third step of forming a conductive film overlapping with part of the crystalline semiconductor film, a fourth step of forming a semiconductor region in which phosphorus is added to the crystalline semiconductor film, And a fifth step of intermittently repeating radiation from the lamp light source a plurality of times from the surface opposite to the surface.

The object to be treated is held in a refrigerant, the maximum temperature of the object to be treated is 600 to 800 ° C., and the holding time is 30 to 60 ° C.
By repeatedly irradiating the radiation from the lamp light source a plurality of times so as to be 0 second, the object can be efficiently heated and the heat treatment can be completed. At this time, by matching the wavelength of the electromagnetic wave radiated from the lamp light source with the absorption band of the object, only the object can be selectively heated. Specifically, heat treatment of a semiconductor film formed over a glass substrate having a strain point of 700 ° C. or lower can be performed.

[0026]

Embodiments of the present invention will be described below in detail with reference to the drawings. The concept of the heat treatment apparatus of the present invention will be described with reference to FIG. FIG. 1 is a view showing a configuration of a heat treatment apparatus of the present invention. A processing chamber 101 is preferably formed of quartz, and has a lamp light source 102 as a means for heating an object 106 to be processed. The lamp light source 102 is provided outside the processing chamber 101, and is provided with a reflection plate 103 for efficiently irradiating the object 106 with radiant heat. Further, a coolant inlet 104 is provided for cooling the object 106, and a coolant is also introduced at the same time when heating is performed. As the refrigerant 105, an inert gas such as nitrogen or helium, or a liquid can be used. It is desirable that such a refrigerant be highly purified. In any case, it is desirable that the radiant heat of the lamp light source 102 be a medium having a small absorption rate.

The lamp light source is turned on in a pulse form by its power supply and control circuit. FIG. 2 is a diagram illustrating a method of controlling an object to be processed heated by a lamp light source and a flow rate of a refrigerant flowing into a processing chamber. Initially, the workpiece placed at room temperature is rapidly heated by the lamp light source. The heating period is 100 ~
A set temperature (for example, 110 ° C.) at a heating rate of 200 ° C./sec.
(0 ° C.). For example, if heating is performed at a heating rate of 150 ° C./sec, heating can be performed up to 1100 ° C. in less than 7 seconds. Thereafter, the temperature is maintained at the set temperature for a certain period of time, and the lighting of the lamp light source is shut off. The holding time is 0.5 to 5 seconds. Therefore, the continuous lighting time of the lamp light source is 0.1 second or more,
Never exceed 20 seconds. The coolant decreases the flow rate with the lighting of the lamp light source, and increases the flow rate at which the lighting of the lamp light source is cut off. The cooling rate is controlled by controlling the flow rate at this time. The cooling rate is 50 to 150 ° C./sec. For example, when cooling at a rate of 100 ° C./sec, it is possible to cool from 1100 ° C. to 300 ° C. in 8 seconds.

The present invention is characterized in that such a heating and cooling cycle is repeated a plurality of times. By shortening the actual heating time and irradiating light selectively absorbed by the semiconductor film from the lamp light source, it is possible to selectively heat only the semiconductor film without heating the substrate itself so much. Becomes The pulsed radiation as shown in FIG. 2 heats the semiconductor film, stops the heating before the heat propagates to the substrate side, and cools the surroundings with a coolant, so that the temperature of the substrate does not increase so much. Therefore, deformation of the substrate, which has been a problem in the conventional RTA apparatus, can be prevented.

As shown in FIG. 4, the form of the object to be processed is such that a semiconductor film 203 is formed on a light-transmitting substrate 201 such as glass, and a conductive layer is further provided thereon. This conductive layer may be a single layer, but preferably has a structure in which a light absorbing first conductive film 205 and a heat conductive second conductive film 206 are provided. Further, a first insulating film 202 and a second insulating film 204 may be formed on the surface of the semiconductor film 203 on the substrate side and on the opposite side.

The pulsed radiation from the lamp light source
Irradiate from the 01 side. The pulsed radiation is intermittently repeated in a pulsed manner as described with reference to FIG. The periphery of the substrate is filled with a refrigerant 207 such as nitrogen gas. As shown in the graph inserted in FIG. 4, the temperature distribution of the object to be processed by the irradiation of the pulsed radiation is A and B.
In different areas.

Some of the pulsed radiation except for those reflected at each interface is absorbed by the semiconductor film 203 and converted into heat. Light that reaches the light-absorbing first conductive film 205 in the region B is absorbed there and converted into heat. Part of the heat generated therethrough passes through the second insulating film 204 to the semiconductor film 203.
Propagate to On the other hand, the region A transmits from the second insulating film 204 to the space filled with the refrigerant 207. Therefore, region A and B
In the region, the temperature that rises even if pulsed radiation is repeated at the same intensity is different. That is, a direction parallel to the substrate surface in the semiconductor film (for convenience, described as a horizontal direction)
A temperature gradient can be generated.

Such a temperature gradient can be effectively used when gettering of the channel forming region is performed using the region B as a channel forming region and the region A as an impurity semiconductor region. More specifically, if the A region is an n-type semiconductor region to which phosphorus is added, pulsed radiation is repeated as shown in FIG. 2 to segregate the metal element contained in the B region into the A region. Can be.

In particular, this gettering effect can be applied for the purpose of removing the metal element from the channel formation region after the crystallization is performed by adding the metal element.

In any case, by forming the conductive film on the semiconductor film, the temperature of the region (region B in FIG. 4) becomes higher than that of the other region (region A in FIG. 4). In the embodiment shown in FIG. 4, a semiconductor film formed on a glass substrate, a gate insulating film (second insulating film 204), and a gate electrode (first
The conductive film 205 can be replaced with the second conductive film 206). In that case, when a pixel portion and a driving circuit portion provided therearound are formed on the same substrate as in a liquid crystal display device, the effect of the heat treatment may not be obtained uniformly. The pixel portion and the drive circuit portion have different densities of TFTs formed, and the latter is formed at a much higher density.
In that case, even if pulsed radiation of the same intensity is repeated, the temperature of the drive circuit unit becomes higher.

As shown in FIGS. 6A to 6C, as a method for uniformly obtaining the effect of the heat treatment, the light intensity is partially attenuated on the side where the pulsed radiation from the lamp light source is incident. Use means. FIG. 6A shows a semi-transmissive film formed of a thin metal film such as chromium on the side where pulsed radiation 406 is incident on a light-transmitting substrate 401 on which a pixel portion 402 and a driver circuit portion 403 are formed. 405 to drive circuit 403
Are provided in alignment with each other to attenuate pulsed radiation. FIG. 6B shows an example in which a slit portion 407 is provided instead of the semi-transmissive film 405. Similarly, pulsed radiation can be attenuated. FIG. 6C illustrates an example in which the metal mask 408 is provided with an opening 410 in accordance with a pixel portion.
An example in which a slit portion 409 is formed in accordance with a drive circuit portion is shown. The rate of attenuating the pulsed radiation is appropriately set, and can be easily adjusted by adjusting the transmittance of the semi-permeable film and the aperture ratio of the slit portion.

As described above, by using the present invention, even when a substrate having low heat resistance such as glass is used, activation of an impurity element added to a semiconductor film by heat treatment in a short time,
A method for performing gettering treatment of a semiconductor film and such heat treatment can be performed. Such a heat treatment can be incorporated into a semiconductor device manufacturing process.

[0037]

[Embodiment 1] FIG. 5 shows the structure of a single-wafer heat treatment apparatus as an example of the heat treatment apparatus of the present invention. Processing room 3
Numeral 01 is formed of quartz, around which a cooling means 305 by water cooling is provided. A reflector 303 is added to the lamp light source 302 so that pulsed radiation is efficiently diffused to the object 317. When a rod-shaped halogen lamp is used, a plurality of the halogen lamps are installed as shown in FIG. 5 so that the object to be processed 317 is irradiated with pulsed radiation at a uniform intensity. Radiation (for example, 0.5 μm
(Including a wavelength of ３3 μm) is illuminated in a pulse form by the light source control unit 304.

The processing chamber 301 is supplied with nitrogen gas as a refrigerant from a refrigerant supply source 306. The amount of nitrogen gas supplied to the processing chamber 301 can be controlled by the flow rate control means 307. Refrigerant supplied to the processing chamber is exhaust port 31
1 to the outside, and the processing chamber is always filled with clean nitrogen gas. The temperature detector 309 is a temperature sensor 308 using a radiation thermometer, and is provided to monitor the temperature of the object to be processed heated by pulsed radiation from a lamp light source. To this end, the temperature sensor 308 is attached to a part of the stage 318.

The control means 310 includes the light source control unit 30
4. By controlling the operation of the flow control means 307, it is possible to synchronize the blinking of the lamp light source and the increase / decrease of the supply amount of the refrigerant as shown in FIG. Further, the control unit 310 receives a signal from the temperature detector 309, detects the temperature of the object to be processed, and determines whether there is any abnormality.

The object to be processed is set on the substrate holder 316 of the load / unload chamber 315 and is transferred to the processing chamber 301 by the transfer means 314 of the transfer chamber 313. Transfer chamber 31
A gate valve 312 is provided between the processing chamber 3 and the processing chamber 301,
During the heat treatment, the processing chamber 301 is filled with a refrigerant.

The following procedure is used to activate the impurity element added to the semiconductor film. The semiconductor film is formed on one main surface of the glass substrate. The object on which the semiconductor film is set in the load / unload chamber 315 is taken out of the substrate holder 316 by the transfer means 314 of the transfer chamber 313 and set on the stage 318 of the processing chamber 301. At this time, the object to be processed is set such that the semiconductor film is located on the surface opposite to the lamp light source 302. That is, the radiation enters the semiconductor film through the glass substrate.

Thereafter, the gate valve 312 is closed. Volume 18
In the processing chamber of × 30 × 1.5 cm ³ , the refrigerant is constantly supplied to the processing chamber at a rate of 1 to 2 liter / min by the flow rate control means 307, and after closing the gate valve 312, the processing chamber is the refrigerant. 10-20 liters / mi to replace with nitrogen gas
The supply amount of n is increased and held for a certain time.

The supply amount of the nitrogen gas is reduced to 2 liter / min almost simultaneously with the lighting of the lamp light source. Heating by the lamp light source is considered based on the temperature detected by the temperature sensor 308, and is performed at 1100 ° C. at a speed of 100 to 200 ° C./sec.
Heat until Thereafter, control is performed so as to maintain the temperature for 0.5 seconds to 5 seconds. The cooling is performed by turning off the lamp light source and increasing the flow rate of the nitrogen gas to 10 liter / min.
Cool to ~ 400 ° C. Further, a holding period (2) of about 5 to 60 seconds can be provided in this state as shown in FIG. FIG. 3 shows a graph in which the time change of the temperature detected by the temperature sensor is plotted. The data shown in FIG.
Two data when held for 75 seconds are shown. Tables 1 and 2 are numerical data corresponding to the graph of FIG. 3, and show the temperature and the rate of change at each measurement time.

[0044]

[Table 1]

[0045]

[Table 2]

The same applies to the case where the impurity element added to the semiconductor film is activated and the case where gettering is performed. However, by repeatedly irradiating such pulsed radiation a plurality of times, the activation is performed without curving the substrate. It is possible to improve the conversion rate. Also, gettering is possible.

[Embodiment 2] As another example of the heat treatment apparatus of the present invention, FIG. 16 shows a configuration of an in-line heat treatment apparatus for a large area substrate. The processing chamber 1301 is formed of quartz, and a cooling means 1305 by water cooling is provided around the processing chamber 1301. A reflector is added to the lamp light source 1302,
The light is condensed by the optical lens 1324 and irradiated onto the object. A rod-shaped halogen lamp is used as the lamp light source 1302, and linear light can be applied to the object by using a cylindrical lens as the optical lens 1324. The lamp light source is turned on in a pulse shape by the light source control unit 1304.

The processing chamber 1301 is supplied with a nitrogen gas or a helium gas as a refrigerant from a refrigerant supply source 1306. The nitrogen gas is supplied to the processing chamber 13 by the flow control means 1307.
01 can be controlled. The refrigerant supplied to the processing chamber is discharged to the outside from the exhaust port 1311 so that the processing chamber is always filled with clean nitrogen gas.

The control means 1310 includes a light source control unit 13
04, the flow control means 1307, the operation of the processing object 1317 in the processing chamber and the transport means 1323 of the stage 1318 are controlled, and the blinking of the lamp light source and the increase / decrease of the supply amount of the refrigerant are synchronized as shown in FIG. The timing at which 1318 moves is controlled.

The object to be processed is placed on the stage and set on the substrate holder 1316 in the load chamber 1315. Then, the processing chamber 1 is transferred by the transport unit 1314 of the loading chamber 1313.
It is transported to 301. Loading room 1313 and processing room 1301
A gate valve 1312 is provided between the processing chamber 1301 and the processing chamber 1301 so that the processing chamber 1301 is filled with a refrigerant during heat treatment.

The workpiece 1317 placed on the stage 1318 is irradiated with pulsed radiation from the lamp light source 1302 while being moved by the transfer means 1323 in the processing chamber 1301. Thus, it is possible to heat-treat the entire surface of the object to be processed. The object 1317 to which the heat treatment has been completed is moved to the unloading chamber 1320 together with the stage 1318 by the transfer means 1321, and thereafter,
It is stored in the substrate holder 1326 of the unload chamber 1322.

The heating method is performed in the same manner as in the first embodiment. However, in the case of the apparatus having the structure shown in FIG. 16, since the object to be processed moves, it is necessary to coordinate the pulsed radiation with the timing of the movement. . Of course, the flow rate of the nitrogen gas used as the refrigerant is similarly controlled. The movement of the object is performed during the holding period (2) shown in FIG. 2, and the object is moved stepwise. The moving distance may be appropriately set, but the pulsed radiation is moved so that the same area is irradiated a plurality of times.

With this configuration, it is possible to heat-treat a large-area substrate without increasing the size of the apparatus. The same applies to the case where the impurity element added to the semiconductor film is activated and the case where gettering is performed. By irradiating such pulsed radiation a plurality of times, the activation is performed without curving the substrate. It is possible to improve the rate. Also, gettering is possible.

Embodiment 3 Next, an example of a method for manufacturing a TFT using the present invention will be described with reference to FIGS. FIG.
In FIG. 1A, a crystalline semiconductor film containing silicon as a main component is formed over a light-transmitting substrate 501 of aluminoborosilicate glass, barium borosilicate glass, or the like. The crystalline semiconductor film is obtained by crystallizing an amorphous semiconductor film by a laser annealing method. Further, it can also be obtained by irradiating pulsed radiation using the heat treatment apparatus described in Embodiment 1 or Embodiment 2. The thickness of the crystalline semiconductor film is 25
It is formed in a range of up to 80 nm. In manufacturing a TFT, semiconductor films 503 to 505 divided into islands are formed by etching to a predetermined size for element isolation. Also,
Between the substrate 501 and the semiconductor film, a first insulating film 502 of one or a combination of silicon nitride, silicon oxide, and silicon nitride oxide is formed in a thickness of 50 to 200 n.
m.

As an example of the first insulating film 502, a silicon oxynitride film is formed to a thickness of 50 to 200 nm by plasma CVD using SiH ₄ and N ₂ O. As another embodiment, a silicon oxynitride film formed from SiH ₄ , NH _3, and N ₂ O by plasma CVD is 50 nm, and SiH ₄ and N ₂ O are used.
A two-layer structure in which a silicon oxynitride film made of O is laminated to a thickness of 100 nm, or a silicon nitride film and TEOS
(Tetraethyl Ortho Silicate) may be used to form a two-layer structure in which silicon oxide films are stacked.

On the semiconductor films 503 to 505, 100 n
A silicon oxide film 506 having a thickness of m is formed by a plasma CVD method. Further, as shown in FIG. 7A, a mask 507 made of a resist is formed, and an n-type impurity (donor) is added by an ion doping method to form a semiconductor film 504.
Next, a first n-type semiconductor region 508 is formed. Phosphorus is typically added as an n-type impurity (donor), and the average value of the phosphorus concentration in the first n-type semiconductor region 508 is 1 × 10 ¹⁷ to 1
The range is × 10 ¹⁹ / cm ³ . Here, the silicon oxide film 506 is used as a mask for controlling the phosphorus concentration.

Therefore, after the doping, the silicon oxide film 50
6 is removed with hydrofluoric acid or the like, and the second insulating film 509 is
Formed with a thickness of The second insulating film 509 is used as a gate insulating film and is formed by a plasma CVD method or a sputtering method. As the second insulating film 509, S
A silicon oxynitride film formed by adding O ₂ to iH ₄ and N ₂ O can reduce the fixed charge density in the film, and is a preferable material for a gate insulating film. Of course,
The gate insulating film is not limited to such a silicon oxynitride film, and an insulating film such as a silicon oxide film or a tantalum oxide film may be used as a single layer or a stacked structure.

Then, a first conductive film and a second conductive film for forming a gate electrode are formed on the second insulating film 509. The first conductive film is formed using a light-absorbing conductive film. One example of such a conductive film is tantalum nitride, which is
It is formed to a thickness of 100 nm. The second conductive film is made of a high melting point metal such as tungsten or molybdenum,
It is formed to a thickness of 00 nm. These materials are stable even in a heat treatment at 400 to 600 ° C. in a nitrogen atmosphere, and the resistivity does not significantly increase.

Next, as shown in FIG. 7B, the first conductive film and the second conductive film are etched to form gate electrodes 510 to 5.
12 (first conductive films 510 a to 512 a and second conductive film 51
0b to 512b). Although there is no limitation on the etching method, preferably, the ICP (Inductively Coupled) is used.
d Plasma: an inductively coupled plasma) etching method is preferably used. At this time, a mixed gas of CF ₄ and Cl ₂ is used as an etching gas.

After the gate electrode is formed, the semiconductor film 503 is formed by ion doping using the gate electrode as a mask.
To 505 are doped with an n-type impurity (donor). Thus, the second n-type semiconductor regions 513 to 515 are formed.
The average value of the phosphorus concentration of the second n-type semiconductor regions 513 to 515 is in the range of 1 × 10 ¹⁶ to 1 × 10 ¹⁸ / cm ³ , but is added at a lower concentration than the first n-type semiconductor region. Therefore, the first n-type semiconductor region formed in the semiconductor film 504 remains as it is.

Subsequently, resist masks 516 and 51 are formed on the semiconductor films 503 and 505 as shown in FIG.
After forming 7, an n-type impurity (donor) is again doped by ion doping. Third n-type semiconductor region 51
The average value of the phosphorus concentration of 8 to 520 is 1 × 10 ²⁰ to 1 × 10
The range is ²¹ / cm ³ . In this state, the semiconductor film 504
The first n-type semiconductor region 508 remains in a region overlapping with the gate electrode. Further, the second n-type semiconductor region 515 in the semiconductor film 505 remains in a region overlapping with the mask 517.

Then, as shown in FIG. 7D, a mask 521 made of a resist is formed, and a semiconductor film 503 forming a p-channel TFT is doped with a p-type impurity (acceptor). Typically, boron (B) is used. The impurity concentration of the first p-type semiconductor region 522 is 2 × 10 ²⁰ to 2
X 10 ²¹ / cm ^3, and boron is added 1.5 to 3 times the maximum value of the contained phosphorus concentration to invert the conductivity type to p-type.

Next, in FIG. 7E, a heat treatment for activating the added impurities is performed. This heat treatment is performed by irradiating pulsed radiation a plurality of times using the heat treatment apparatus described in the first or second embodiment. Since the radiation is applied from the substrate side, even if the first n-type semiconductor region overlapping with the gate electrode is formed, the p-type and n-type impurity elements including the region can be reliably activated.

In the above steps, the respective semiconductor films are doped with the impurities for forming the source or drain region and the LDD region, and the activation is completed.
After that, as illustrated in FIG. 7F, a protective insulating film 526 including a silicon nitride film or a silicon oxynitride film is formed by a plasma CVD method. And 350-450 ° C.
Preferably, a heat treatment at 410 ° C. is performed. At this temperature, hydrogen in the first interlayer insulating film is released to hydrogenate the semiconductor film. Therefore, this heat treatment is more suitably performed in a furnace annealing furnace or a clean oven.

The interlayer insulating film 527 is formed of an organic insulating material such as polyimide or acrylic, and has a flat surface. Of course, TEOS (Tetraethyl Ortho S
Although a silicon oxide film formed using ilicate may be used, it is preferable to use the organic material from the viewpoint of improving flatness.

Next, contact holes are formed, and aluminum (Al), titanium (Ti), and tantalum (Ta) are formed.
The source or drain wiring 528 to 53
Form 3

In the p-channel TFT 540 manufactured by the above steps, the channel formation region 523 and the first p-type semiconductor region 5 functioning as a source or drain region are provided.
22. The n-channel TFT 541 includes a first n-type TFT overlapping with the channel formation region 524 and the gate electrode 511.
A semiconductor region 508 and a third n-type semiconductor region 519 functioning as a source or drain region. First
The n-type semiconductor region is an LDD region, and is formed so as to overlap with the gate electrode, thereby alleviating the high electric field region formed at the drain end and preventing the TFT from being deteriorated due to the hot carrier effect. In the n-channel TFT 542, a second n-type semiconductor region 515 and a third n-type semiconductor region 520 functioning as a source or drain region are formed outside the channel formation region 525 and the gate electrode 512. The second n-type semiconductor region 515 is an LDD region, and can reduce off current of the TFT. In the process described in this embodiment, an optimal dimension can be set to reduce the off-current value.

Through the above steps, a CMOS TFT in which the n-channel TFT and the p-channel TFT are complementarily combined can be obtained. In the steps described in this embodiment, an LDD can be designed in consideration of characteristics required for each TFT and can be separately formed on the same substrate. Such a CMOS type TFT makes it possible to form a drive circuit of a display device driven by active matrix. In addition, such an n-channel TFT or a p-channel TFT can be applied to a transistor forming a pixel portion. Further, it can be used as a TFT for realizing a thin film integrated circuit instead of an LSI manufactured on a conventional semiconductor substrate. Although the TFT has a single-gate structure here, a multi-gate structure provided with a plurality of gate electrodes can of course be employed.

In the manufacturing process of such a TFT, the heat treatment apparatus of the present invention can be used for activation. In addition, the heat treatment method of the present invention can perform activation in a short time without damaging the substrate.

[Embodiment 4] In this embodiment, as an example of a method for manufacturing a semiconductor device using the heat treatment apparatus of the present invention, a driving circuit including an n-channel TFT and a p-channel TFT and a pixel portion are formed over the same substrate. The manufacturing method will be described with reference to FIGS.

First, as shown in FIG.
A first insulating film 602 is formed on SiH ₄ by plasma CVD.
Silicon oxynitride film made of NH ₃ and N ₂ O
It is formed in a two-layer structure in which a silicon oxynitride film made of 0 nm and SiH ₄ and N ₂ O is stacked to a thickness of 100 nm. As the substrate used here, an alkali-free glass substrate such as aluminoborosilicate glass or barium borosilicate glass is suitable, and a substrate having a thickness of about 0.5 to 1.1 mm is used.

Semiconductor films 603 to 606 to be formed thereon
Has a thickness of 40 nm and is formed by plasma CVD or reduced pressure C.
Polycrystalline silicon obtained by crystallizing amorphous silicon deposited by the VD method using a laser annealing method or a solid phase growth method is used. Alternatively, the heat treatment apparatus described in the first or second embodiment can be used for crystallization by pulsed radiation to obtain the same. Then, the wafer is divided into islands through a light exposure process. Thereafter, in this embodiment, p
The description is made on the assumption that a channel type TFT is formed and an n-channel type TFT is formed in the semiconductor films 604 and 605.
The semiconductor film 606 is provided for forming an auxiliary capacitor.

A second insulating film 607 having a thickness of 75 nm is formed to cover these semiconductor films to form a gate insulating film. The second insulating film is made of TEOS (Tetraethyl Ortho) by a plasma CVD method.
(Silicate) or silicon oxynitride using SiH ₄ and N ₂ O as raw materials.

Next, as shown in FIG. 10B, a first conductive film 608 and a second conductive film 609 are formed on the second insulating film. The first conductive film 608 is formed using tantalum nitride, and the second conductive film is formed using tungsten. This conductive film is for forming a gate electrode, and has a thickness of 3
0 nm and 300 nm.

Thereafter, as shown in FIG. 10C, a resist pattern 610 for forming a gate electrode and a data line is formed by a light exposure process. A first etching process is performed using this resist pattern. Although there is no limitation on the etching method, preferably, the etching method is ICP (Inductively Co.).
upled Plasma: Inductively coupled plasma) etching method is used. Using CF ₄ and Cl ₂ as etching gases for tungsten and tantalum nitride, and applying a RF of 500 W to the coil type electrode at a pressure of 0.5 to ₂ Pa, preferably 1 Pa.
(13.56 MHz) Power is supplied to generate plasma. At this time, R of 100 W is also applied to the substrate side (stage).
F (13.56 MHz) power is applied to apply a substantially negative self-bias voltage. When CF ₄ and Cl ₂ are mixed, tungsten and tantalum nitride can be etched at substantially the same rate.

Under the above etching conditions, the end portion can be tapered by the shape of the resist mask and the effect of the bias voltage applied to the substrate side. The angle of the tapered portion is set to 15 to 45 °. In order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased by about 10 to 20%. Since the selectivity ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the second insulating film is exposed by the over-etching process is 20 to 4
It is etched by about 0 nm. Thus, the first shape electrodes 611-614 (tantalum nitride 611a-611) made of tantalum nitride and tungsten are subjected to the first etching process.
14a, tungsten 611b to 614b) and first shape wiring 615 tantalum nitride (615a, tungsten 61)
5b) is formed.

Then, a first doping process is performed to dope the semiconductor film with an n-type impurity (donor). The method is performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose is 1 × 10 ^{13 to} 5 × 10 ^14.
/ Cm ² . As the impurity element imparting n-type, an element belonging to Group 15 of the periodic table, typically, phosphorus (P) or arsenic (As) is used. In this case, the first shape electrodes 611-6
Reference numeral 14 denotes a mask for an element to be doped. The acceleration voltage is appropriately adjusted (for example, 20 to 60 keV), and the first impurity region 6 is formed by the impurity element that has passed through the second insulating film.
16 to 619 are formed. First impurity regions 616 to 6
The phosphorous (P) concentration at 19 is 1 × 10 ²⁰ to 1 × 10 ²¹ /
cm ³ range.

Subsequently, a second etching process is performed as shown in FIG. Etching is performed using an ICP etching method, and CF ₄ , Cl _2, and O ₂ are mixed as an etching gas, and a 500 W RF is applied to the coil-type electrode at a pressure of 1 Pa.
Electric power (13.56 MHz) is supplied to generate plasma. On the substrate side (stage), 50 W RF (13.56
MHz) power is applied, and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched so that the tantalum nitride film as the first conductive film remains. Thus, the second shape electrodes 620-623 (tantalum nitride 620a-623a, tungsten 620b-62) made of tantalum nitride and tungsten by the second etching process.
3b) and the second shape wiring 624 tantalum nitride (624a,
Tungsten 624b) is formed. The portion of the second insulating film that is not covered with tantalum nitride is etched to a thickness of about 10 to 30 nm by this etching treatment, and becomes thin.

The dose in the second doping process is smaller than that in the first doping process, and n-type impurities (donors) are doped under the condition of a high acceleration voltage. For example, the acceleration voltage is set to 70 to 120 keV, and 1 × 10 ¹³ /
The second impurity region is formed inside the first impurity region at a dose of cm ² . The doping is performed by passing the exposed tantalum nitride 620a to 623a, and adding an impurity element to the semiconductor film therebelow. Thus, the second impurity regions 625 to 625 overlapping the tantalum nitrides 620a to 623a
628 are formed. This impurity region is made of tantalum nitride 6
The peak concentration varies in the range of 1 × 10 ¹⁷ to 1 × 10 ¹⁹ / cm ³ depending on the film thickness of 20a to 623a. The depth distribution of the n-type impurity in this region is not uniform but is formed with a certain distribution.

Next, as shown in FIG. 11B, a resist mask 6 covering the second shape electrode 621 by a light exposure process.
29 are formed, and the exposed tantalum nitride film of the second shape electrode is selectively etched. The etching gas is C
This is performed using a mixed gas of l ₂ and SF ₆ . Thus, the third shape electrode 63 in which the ends of tungsten and tantalum nitride match.
0 to 632 are formed. Also, the data line may be processed at the same time to form the third shape wiring 633 in the same manner.

Then, resist masks 634 and 635 are formed as shown in FIG.
3, 606 is doped with a p-type impurity (acceptor). Typically, boron (B) is used. The impurity concentration of the first p-type semiconductor regions 636 and 637 is 2 × 10 ²⁰ to 2 ×.
The conductivity is adjusted to 10 ²¹ / cm ^3, and boron is added in an amount of 1.5 to 3 times the contained phosphorus concentration to make the conductivity type p-type.

Through the above steps, an impurity region is formed in each semiconductor film. The second shape electrode 621 and the third shape electrodes 630 to 632 function as gate electrodes. Further, the third shape wiring 633 forms a data line. The gate electrode 632 serves as one electrode forming an additional capacitance,
A capacitor is formed in a portion overlapping with the semiconductor film 606.

Thereafter, as shown in FIG. 12A, a protective insulating film 638 made of a silicon oxynitride film is
It is formed to a thickness of 50 nm by the VD method. Then, heat treatment for activating the added impurities is performed. This heat treatment is performed by irradiating pulsed radiation a plurality of times using the heat treatment apparatus described in the first or second embodiment. Since the radiation is applied from the substrate side, even if the first n-type semiconductor region overlapping with the gate electrode is formed, the p-type and n-type impurity elements including the region can be reliably activated.

The hydrogenation process is a process necessary for improving the characteristics of the TFT, and can be performed by a heat treatment method or a plasma treatment method in a hydrogen atmosphere. In addition, as shown in FIG. 12B, a silicon nitride film 640 is formed to a thickness of 50 to 100 nm,
By performing the heat treatment at 00 ° C., hydrogen in the silicon nitride film 640 is released, and hydrogen is diffused into the semiconductor film to compensate for defects.

The interlayer insulating film 641 is formed of an organic insulating material such as polyimide or acrylic, and has a flat surface. Of course, silicon oxide formed using TEOS by a plasma CVD method may be used, but it is preferable to use the organic material from the viewpoint of improving flatness.

Next, a contact hole is formed from the surface of the interlayer insulating film 641 to reach the second n-type semiconductor region or the first p-type semiconductor region of each semiconductor film, and Al, Ti, Ta
A wiring is formed by using the method described above. In FIG. 12B, 6
42 and 645 are source lines, and 643 and 644 are drain lines. 647 is a pixel electrode, and 646 is a data line 633 and the second n-type semiconductor region 66 of the semiconductor film 605.
7 is a connection electrode for connection with the connection electrode 7. Reference numeral 648 denotes a gate line, which is not shown in the figure but is connected to the third shape electrode 631 functioning as a gate electrode.

In this way, a TFT for forming the driver circuit 650 and the pixel portion 651 is formed on the same substrate. Drive circuit 6
50 is a p-channel TFT 652 and an n-channel TF
Although T653 is illustrated, various functional circuits such as a shift register, a level shifter, a latch, and a buffer circuit can be formed using these TFTs. Also,
The cross-sectional structure between BB ′ shown in FIG. 12B corresponds to the line BB ′ shown in the pixel structure shown in FIG.

The p-channel TFT 65 of the driving circuit 650
2 includes a channel formation region 660 and a first p-type semiconductor region 661 functioning as a source region or a drain region. The n-channel TFT 653 includes a channel formation region 662, a first n-type semiconductor region 663 overlapping with the gate electrode 621, and a second n-type semiconductor region 664 functioning as a source or drain region.

The n-channel TFT of the pixel portion 651
Reference numeral 654 denotes a channel formation region 665 and a gate electrode 640
Outside the first n-type semiconductor region 666, the second n-type semiconductor region 667 to function as a source or drain region.
669 are formed. Further, the storage capacitor 655 is formed by the semiconductor film 606, the second insulating film 607, and the gate electrode 632. The first p-type semiconductor region 671 is formed in the semiconductor film 606 by the above steps.

The first n formed in the n-channel TFT
The type semiconductor region is an LDD (Lightly Doped Drain) region. When the gate electrode is formed so as to overlap with the gate electrode as in the n-channel TFT 653, a high electric field region formed at a drain end is relaxed, and deterioration due to a hot carrier effect can be suppressed. On the other hand, n-channel type TFT
By providing an LDD region outside the gate electrode as in 654, the off-state current can be reduced.

The p-channel type TFT 652 is formed in a single drain structure. By adjusting the time of the third etching process, the end of the gate electrode is retreated,
An offset region can be formed between the channel formation region and the impurity region. Such a structure is possible also in the n-channel TFT 654, and is very effective for the purpose of reducing off-state current.

As described above, an element substrate in which a pixel portion and a driver circuit are formed by TFTs on the same substrate can be formed. In the manufacturing process of the element substrate described in this embodiment, it is possible to form TFTs having different LDD regions on the same substrate using five photomasks.

As in the third embodiment, in the manufacturing process of such a TFT, the heat treatment apparatus of the present invention can be used for activation. In addition, the heat treatment method of the present invention can perform activation in a short time without damaging the substrate.

[Embodiment 5] In this embodiment, another example of a method of manufacturing a semiconductor film applicable to Embodiment 3 or Embodiment 4 is shown in FIG.
This will be described with reference to FIG. The method for manufacturing a semiconductor film described with reference to FIGS. 8A and 8B is a method in which a metal element is added to the entire surface of an amorphous silicon film and crystallized. The applied metal elements are Fe, C
o, Ni, Ru, Rh, Pd, Os, Ir, Pt, C
One or a plurality of types selected from u and Au. Ni is typically applied. It has been found that these elements make it possible to lower the heat treatment temperature for crystallization and also to shorten the heat treatment time.

First, in FIG. 8A, a glass substrate represented by Corning # 1773 glass substrate is used as the substrate 551. On the surface of the substrate 551, the first insulating film 5
As 52, a silicon oxynitride film is formed to a thickness of 100 nm using SiH ₄ and N ₂ O by a plasma CVD method. First
The insulating film 552 is provided so that alkali metal contained in the glass substrate does not diffuse into a semiconductor film formed thereover.

The amorphous silicon film 553 is formed by plasma CVD.
It is produced by a method. SiH ₄ is introduced into the reaction chamber, decomposed by intermittent discharge or pulse discharge, and deposited on the substrate 551. An example of the film forming conditions is that a high frequency power of 27 MHz is modulated, a repetition frequency is 5 kHz, and a duty ratio is 2
It is deposited to a thickness of 54 nm by 0% intermittent discharge. Of course, 13.56 MHz continuous discharge may be used. In order to minimize impurities such as oxygen, nitrogen and carbon in the amorphous silicon film 553, SiH ₄ has a purity of 99.9999.
% Or more is used. The specifications of the plasma CVD apparatus are as follows. For a reaction chamber having a volume of 13 liters in the reaction chamber, a composite molecular pump having an exhaust speed of 300 liter / second is provided in the first stage, and a dry pump having an exhaust speed of 40 m ³ / hr is provided in the second stage. To prevent the vapor of organic substances from back-diffusing from the exhaust system side, increase the ultimate vacuum of the reaction chamber, and minimize the incorporation of impurity elements into the amorphous semiconductor film during formation. I have.

Then, a nickel acetate solution containing 10 ppm by weight of nickel is applied by a spinner to form a nickel-containing layer 554. In this case, in order to improve the familiarity of the solution, as a surface treatment of the amorphous semi-silicon film 553, an extremely thin oxide film is formed with an aqueous solution containing ozone, and the oxide film is mixed with hydrofluoric acid and hydrogen peroxide. After a clean surface is formed by etching with a liquid, it is again treated with an ozone-containing aqueous solution to form an extremely thin oxide film. Since the surface of silicon is inherently hydrophobic, a nickel acetate solution can be uniformly applied by forming an oxide film in this manner.

Next, a heat treatment is performed at 500 ° C. for 1 hour to release hydrogen in the amorphous silicon film. And
Heat treatment is performed at 580 ° C. for 4 hours for crystallization. Thus, a crystalline silicon film 555 shown in FIG. 8B is formed.

Further, in order to increase the crystallization ratio (the ratio of the crystal component in the total volume of the film) and repair defects remaining in the crystal grains, laser light 5 is applied to the crystalline silicon film 555.
Laser annealing for irradiating 56 is performed. As the laser, an excimer laser beam oscillating at 30 Hz at a wavelength of 308 nm is used. The laser light is 100 to 30 in the optical system.
Focusing is performed at 0 mJ / cm ^2, and laser treatment is performed with an overlap ratio of 90 to 95% without melting the semiconductor film. A crystalline silicon film 557 can be obtained.

Semiconductor film 558 is formed by dividing crystalline silicon film 557 into island shapes. Such a semiconductor film can be directly applied to the third and fourth embodiments.

[Embodiment 6] In this embodiment, an example of a method for gettering a metal element remaining in a semiconductor film obtained in Embodiment 5 will be described with reference to FIG. The gettering described here is based on the method of gettering the metal element from the channel formation region of the TFT. In FIG. 9, a first insulating film 562 and a semiconductor film 56 are formed on a substrate 561.
3, the state where the second insulating film 567, the first conductive film 568, and the second conductive film 569 are formed is shown. Semiconductor film 563
Applies a semiconductor film produced by the method of Embodiment 5;
1 × 10 ²⁰ to 1 × 10 ²¹ / cm
³ phosphorus has been added.

The semiconductor film 563 is an n-type semiconductor region 565
Is the source or drain region in the TFT, and 564 is
It can be regarded as a channel formation region. Where cha
The metal element added for crystallization is 1
× 10¹⁷~ 1 × 10¹⁹/ Cm ^ThreeIt remains at about the concentration.
According to the heat treatment method of the present invention, this metal element is
565 segregation, so-called gettering
ing.

This heat treatment method is the same as that of the first embodiment, and pulsed radiation 570 is applied from the substrate side. As the pulsed radiation, the pulsed radiation of the curve A shown in the graph of FIG. 3 is suitable. That is, it is heated to 1100 ° C. at a rate of 100 to 200 ° C./sec, and kept at that temperature for 4 seconds.
Cooling rate is 300-400 ° C with 50-150 ° C / sec.
Cool down to The effect of gettering can be confirmed only by irradiating such radiation once. More preferably, pulsed radiation is irradiated 2 to 10 times. Thus, the concentration of the metal element used in the crystallization step can be reduced to less than 1 × 10 ¹⁷ / cm ³ .

Such a gettering method is described in the third embodiment.
4 can be freely combined. For example,
In the fourth embodiment, the heat treatment for activation can be combined with gettering described in this embodiment.

[Embodiment 7] In this embodiment, a process of manufacturing a liquid crystal display device driven by an active matrix from a substrate (referred to as an element substrate) on which a driving circuit and a pixel portion obtained in Embodiment 4 are formed will be described. . FIG. 14 shows a state in which the element substrate 700 and the counter substrate 701 are attached with a sealant. A columnar spacer 704 is formed on the element substrate 700. The columnar spacers 704 and 705 are preferably formed in accordance with the depressions of the contact portions formed on the pixel electrodes. The columnar spacer 704 is formed at a height of 3 to 10 μm, depending on the liquid crystal material used. In the contact portion, a concave portion corresponding to the contact hole is formed. By forming a spacer in accordance with this portion, it is possible to prevent the alignment of the liquid crystal from being disordered. After that, an alignment film 706 is formed and a rubbing process is performed. A transparent conductive film 702 and an alignment film 703 are formed over a counter substrate 701. After that, the element substrate 700 and the counter substrate 701 are
7 to inject a liquid crystal to be bonded to form a liquid crystal layer 708. An active matrix driven liquid crystal display device manufactured as described above can be completed.

[Embodiment 8] In this embodiment, a process of manufacturing a light emitting device driven by an active matrix from the TFT obtained in Embodiment 4 will be described with reference to FIGS.

As the substrate 1601, a glass substrate is used. On the glass substrate 1601, an n-channel TFT 1652 and a p-channel TFT 1653 are formed in a driving circuit portion 1650, and a switching TFT 1616 is formed in a pixel portion 1651.
54, a current control TFT 1655 is formed. These TFTs include semiconductor layers 1603 to 1606, a second insulating film 1607 serving as a gate insulating film, and a gate electrode 1608.
To 1611 or the like.

First insulating film 16 formed on substrate 1601
Numeral 02 is formed by forming a silicon oxynitride (expressed by SiO _x N _y ), a silicon nitride film or the like to a thickness of 50 to 200 nm. The interlayer insulating film includes an inorganic insulating film 1618 formed of silicon nitride, silicon oxynitride, or the like, and an organic insulating film 1619 formed of acrylic or polyimide.

The circuit configuration of the drive circuit portion 1650 differs between the gate signal side drive circuit and the data signal side drive circuit, but is omitted here. Wirings 1612 and 1613 are connected to the n-channel TFT 1652 and the p-channel TFT 1653, and a shift register, a latch circuit, a buffer circuit, and the like are formed using these TFTs.

In the pixel portion 1651, the data wiring 1614
Is connected to the source side of the switching TFT 1654,
The drain side wiring 1615 is a current controlling TFT 1655
To the gate electrode 1611. The source side of the current controlling TFT 1655 is connected to the power supply wiring 1617, and the drain side electrode 1616 is connected to the anode of the EL element.

An EL element having an anode, a cathode, and a layer containing an organic compound capable of obtaining electroluminescence (hereinafter referred to as an EL layer) therebetween is formed on a TFT in a pixel portion. The luminescence of the organic compound includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state, and includes both.

The EL element is provided after the banks 1620 and 1621 are formed using an organic resin such as acrylic or polyimide, preferably a photosensitive organic resin so as to cover the wiring. In this embodiment, the EL element 1656 includes an anode 1622 formed of ITO (indium tin oxide), an EL layer 1623, and a cathode formed of a material such as an alkali metal or an alkaline earth metal such as MgAg or LiF. 1
624. Banks 1620, 1621
Is formed so as to cover the end of the anode 1622, and is provided to prevent a short circuit between the cathode and the anode at this portion.

The cathode 1 of the EL element is provided on the EL layer 1623.
624 are provided. As the cathode 1624, a material containing magnesium (Mg), lithium (Li), or calcium (Ca) having a small work function is used. Preferably, an electrode made of MgAg (a material in which Mg and Ag are mixed at a ratio of Mg: Ag = 10: 1) may be used. In addition, MgAg
An Al electrode, a LiAl electrode, and a LiFAl electrode are mentioned.

The laminate composed of the EL layer 1623 and the cathode 1624 needs to be formed individually for each pixel. However, the EL layer 1623 is extremely weak against moisture, so that ordinary photolithography cannot be used. In addition, the cathode 1624 manufactured using an alkali metal is easily oxidized. Therefore, it is preferable to selectively form the film by a vapor phase method such as a vacuum evaporation method, a sputtering method, and a plasma CVD method using a physical mask material such as a metal mask. Further, a protective electrode for protecting from external moisture and the like may be stacked on the cathode 1624. As the protective electrode, a low-resistance material including aluminum (Al), copper (Cu), or silver (Ag) is preferably used.

In order to obtain high luminance with low power consumption, an organic compound which emits light by triplet excitons (triplet) (hereinafter, referred to as triplet compound) is used as a material for forming the EL layer. Note that a singlet compound refers to a compound that emits light only via singlet excitation, and a triplet compound refers to a compound that emits light via triplet excitation.

As the triplet compound, organic compounds described in the following articles can be mentioned as typical materials. (1) T.Tsutsui, C.Adachi, S.Saito, Photochemi
cal Processes in Organized Molecular Systems, ed.
K. Honda, (Elsevier Sci. Pub., Tokyo, 1991) p. 437.
(2) MABaldo, DFO'Brien, Y. You, A. Shoustikov,
S. Sibley, METhompson, SRForrest, Nature 395
(1998) p. 151. This article discloses an organic compound represented by the following formula. (3) MABaldo, S. Lamansky,
PEBurrrows, METhompson, SRForrest, Appl.Phy
s. Lett., 75 (1999) p. 4. (4) T. Tsutsui, M.-J. Yang,
M.Yahiro, K.Nakamura, T.Watanabe, T.tsuji, Y.Fukud
a, T. Wakimoto, S. Mayaguchi, Jpn.Appl.Phys., 38 (12
B) (1999) L1502.

The triplet compound has higher luminous efficiency than the singlet compound, and the operating voltage (the voltage required for the EL element to emit light) can be lowered to obtain the same emission luminance.

FIG. 15 shows a switching TFT 1654.
Has a multi-gate structure, and the current controlling TFT 1655 is provided with an LDD overlapping the gate electrode. Since a TFT using polycrystalline silicon exhibits a high operation speed, deterioration such as hot carrier injection is likely to occur. Therefore, as shown in FIG. 15, it is highly reliable to form a TFT having a different structure (a switching TFT having sufficiently low off-state current and a current controlling TFT which is resistant to hot carrier injection) in a pixel depending on its function. This is very effective in manufacturing a display device having high image quality and high performance (high performance). An active matrix driven light-emitting device manufactured as described above can be completed.

Example 9 FIGS. 17 (A) to 17 (A) show micrographs of samples obtained by adding phosphorus to a crystalline semiconductor film by an ion doping method and thereafter performing activation by the heat treatment method of the present invention.
It is shown in (C). The sample has the same structure as in FIG.
100 nm silicon nitride oxide film on a glass substrate, 50
A semiconductor film having a thickness of 30 nm and a silicon nitride oxide film having a thickness of 80 nm are laminated, and a 30 nm tantalum nitride film and a 300 nm tungsten film which are patterned are formed thereon.

As is well known, the region into which the impurity element has been implanted by the ion doping method becomes amorphous due to ion bombardment. The heat treatment required thereafter aims at recrystallizing the amorphous region and simultaneously activating the impurity element.

The pulsed radiation to be irradiated is represented by a curve A (holding time 4 seconds) and a curve B (holding time 0.75 seconds) in FIG.
The same radiation was applied to each. FIG. 17A shows a sample in which the pulsed radiation of the curve B is irradiated once, and a mottled pattern is observed in a region where the semiconductor film is exposed, confirming that crystallization has not sufficiently progressed. in this case,
Based on empirical rules, it is determined that a dark portion is amorphous and a thin region is crystalline. FIG. 17 (B) is a photograph of a sample irradiated with the same pulsed radiation repeated four times,
Similarly, it can be confirmed that although the mottled pattern is observed, the number is reduced. FIG. 17C shows a sample in which the pulsed radiation of the curve A is irradiated once, and it can be determined that most of the sample is crystallized.

The above results show that the heat treatment method of the present invention can activate phosphorus added by the ion doping method without damaging the substrate. In addition, although depending on the irradiation conditions, it is shown that more preferable results can be obtained by performing irradiation more than once.

[Embodiment 10] Various semiconductor devices can be completed by using the present invention. Examples of the semiconductor device to which the present invention is applied include a portable information terminal (electronic notebook, mobile computer, mobile phone, and the like), a video camera, a still camera, a personal computer, a television receiver, a projector, and the like. Examples of these are shown in FIGS.
0 is shown.

FIG. 18A shows a mobile phone, which includes a display panel 2701, an operation panel 2702, and a connection portion 2703.
The display panel 2701 is provided with a display device 2704 represented by a liquid crystal display device or an EL display device, an audio output unit 2705, an antenna 2709, and the like. An operation panel 2702 is provided with an operation key 2706, a power switch 2707, a voice input unit 2708, and the like. The present invention can be applied to the display device 2904 and can complete a mobile phone.

FIG. 18B shows a video camera, which comprises a main body 9101, a display device 9102 typified by a liquid crystal display device or an EL display device, an audio input portion 9103, operation switches 9104, a battery 9105, and an image receiving portion 9106. I have. The present invention can be applied to the display device 9102 and can complete a video camera.

FIG. 18C shows a mobile computer or a portable information terminal.
02, image receiving unit 9203, operation switch 9204, display device 920 represented by a liquid crystal display device or an EL display device
5. The present invention can be applied to the display device 9205 and can complete a portable information terminal.

FIG. 18D shows a television receiver, which includes a main body 9401, a speaker 9402, a liquid crystal display device, or an EL device.
A display device 9403 typified by a display device, a receiving device 94
04, an amplification device 9405 and the like. The present invention can be applied to the display device 9403 and can complete a television receiver.

FIG. 18E shows a portable book, and a main body 95.
01, a display device 9503 typified by a liquid crystal display device or an EL display device, a storage medium 9504, an operation switch 95
05, and an antenna 9506 for displaying data stored on a mini-disc (MD) or DVD or data received by the antenna. The present invention can be applied to the display device 9503 and can complete a portable book.

FIG. 19A shows a personal computer, which includes a main body 9601, an image input portion 9602, a display device 9603 typified by a liquid crystal display device or an EL display device,
A keyboard 9604 is provided. The present invention relates to a display device 9.
601 can be applied to complete a personal computer.

FIG. 19B shows a player using a recording medium on which a program is recorded (hereinafter, referred to as a recording medium), a main body 9701, a display device 9702 represented by a liquid crystal display device or an EL display device, and a speaker portion 9703. , A recording medium 9704, and operation switches 9705.
This apparatus uses a DVD (Digitia) as a recording medium
l Versatile Disc), CDs, and the like can be used for music appreciation, movie appreciation, games, and the Internet. The present invention can be applied to the display device 9702 and can complete a player.

FIG. 19C shows a digital camera, which comprises a main body 9801, a display device 9802 typified by a liquid crystal display device or an EL display device, an eyepiece 9803, operation switches 9804, and an image receiving portion (not shown). You. The present invention can be applied to the display device 9802 and can complete a digital camera.

FIG. 20A shows a front type projector, which comprises a projection device 3601 and a screen 3602. The present invention can be applied to the projection device 3601, and a front type projector can be completed.

FIG. 20B shows a rear type projector, which includes a main body 3701, a projection device 3702, and a mirror 370.
3. It is composed of a screen 3704. The invention can be applied to a liquid crystal display device incorporated in the projection device 3702, and a rear type projector can be completed.

FIG. 20C is a diagram showing an example of the structure of the projection devices 3601 and 3702 in FIGS. 20A and 20B. Projection device 3601, 370
2 is a light source optical system 3801, mirrors 3802 and 3804
To 3806, dichroic mirror 3803, prism 3807, liquid crystal display device 3808, retardation plate 3809,
It is composed of a projection optical system 3810. Projection optical system 3810
Is composed of an optical system including a projection lens. In this embodiment, an example of a three-plate type is shown, but there is no particular limitation, and for example, a single-plate type may be used. In addition, a practitioner may appropriately place an optical lens, a film having a polarizing function, a film for adjusting a phase difference,
An optical system such as an IR film may be provided.

FIG. 20D is a diagram showing an example of the structure of the light source optical system 3801 in FIG. 20C. In this embodiment, the light source optical system 3801 includes a reflector 3811, a light source 3812, a lens array 3813,
814, a polarization conversion element 3815, and a condenser lens 3816. Note that the light source optical system shown in FIG. 20D is an example and is not particularly limited. For example, a practitioner may appropriately provide an optical system such as an optical lens, a film having a polarizing function, a film for adjusting a phase difference, and an IR film in the light source optical system.

Although not shown here, the present invention can also be applied to a display device incorporated in a refrigerator, a washing machine, a microwave oven, a fixed telephone, a facsimile, and the like, in addition to a navigation system. As described above, the applicable range of the present invention is extremely wide, and can be applied to various products.

[Embodiment 11] In this embodiment, FIG. 21 shows an example in which a TFT used for a pixel portion of a liquid crystal display device is constituted by an inverted staggered TFT. FIG. 21A is an enlarged top view of one of the pixels in the pixel portion provided on the element substrate. In FIG. 21A, a portion cut along a dotted line AA ′
This corresponds to the cross-sectional structure of the pixel portion in FIG.

In FIG. 21B, reference numeral 851 denotes a substrate. First, a base insulating film (not shown) is formed on the substrate.

In the pixel portion, the pixel TFT is formed by an n-channel TFT. A gate electrode 852 is formed over a base insulating film provided over a substrate 851, over which a first insulating film 853a made of silicon nitride and a second insulating film 853b made of silicon oxide are provided. In addition, on the second insulating film, second n-type impurity regions 854 to 856 serving as a source region or a drain region as active layers, channel formation regions 857 and 858, and the second n-type impurity region First n-type impurity region 8 between formation regions
59, 860 are formed. Further, the channel forming region 8
57 and 858 are protected by insulating layers 861 and 862. After forming a contact hole in the first interlayer insulating film 863 covering the insulating layers 861 and 862 and the active layer, a wiring 864 connected to the second n-type impurity region 854 is formed.
A pixel electrode 865 made of Al or Ag is connected to the n-type impurity region 856, and a passivation film 866 is formed thereon. Reference numeral 870 denotes a pixel electrode adjacent to the pixel electrode 865.

In this embodiment, the pixel TFT in the pixel portion is
Has a double-gate structure, but a multi-gate structure such as a triple-gate structure may be used in order to reduce variation in off-state current. Further, a single gate structure may be used to improve the aperture ratio.

Further, the capacitor portion of the pixel portion is formed of a capacitor wiring 871 and a second n-type impurity region 856 using the first insulating film and the second insulating film as dielectrics.

The pixel portion shown in FIG. 21 is merely an example, and it is needless to say that the present invention is not particularly limited to the above configuration.

The heat treatment apparatus of the present invention can be applied to heat treatment for manufacturing a TFT of a pixel portion shown in FIG. 21, for example, activation of an impurity element contained in the second n-type impurity region and gettering. it can. This heat treatment is performed by irradiating pulsed radiation a plurality of times using the heat treatment apparatus described in the first or second embodiment. The pulsed radiation may be emitted from the substrate side or from the opposite side.

According to the seventh embodiment, a liquid crystal display device can be completed from the element substrate of this embodiment. Further, the liquid crystal display device thus manufactured is described in Example 1.
0 can be used as a display unit of various electronic devices.

[Embodiment 12] This embodiment shows characteristics of an n-channel TFT manufactured using the semiconductor film subjected to the gettering process shown in Embodiment 6. The TFT has a single drain structure, a channel length of 10 μm, and a channel width of 8
μm. The effect of reducing the catalytic element by gettering can be seen from the off-current value as a substitute characteristic, and it can be said that the off-current value is generally good if the value is 1 pA or less.

The conditions for gettering are as follows.
This is repeated three times at a holding time of 90 to 730 ° C. for 300 seconds.

FIG. 22 is a cumulative frequency graph showing the distribution (variation) of off-state current values of 94 samples. In the same graph, data of a sample subjected to gettering treatment at 550 ° C. for 4 hours using a furnace annealing furnace is also shown for comparison, but it is shown that there is no significant difference between the two. . Good gettering is also possible by the heat treatment method of the present invention, and it takes less time than gettering using a conventional furnace annealing furnace.

[0148]

According to the heat treatment method of the present invention, activation of the impurity element added to the semiconductor film and gettering can be performed in a short time without causing damage to the substrate and without deformation. Further, the heat treatment apparatus of the present invention enables such a heat treatment. Further, by using such a heat treatment method, the productivity of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a heat treatment method of the present invention.

FIG. 2 is a diagram for explaining timing of blinking of a lamp light source and a supply amount of a refrigerant.

FIG. 3 is a graph showing a change in temperature of an irradiation area due to pulsed radiation from a lamp light source.

FIG. 4 is a diagram illustrating a heat treatment mechanism of the present invention.

FIG. 5 is a diagram illustrating a configuration of a heat treatment apparatus of the present invention.

FIG. 6 is a diagram illustrating a heat treatment method of the present invention.

FIG. 7 is a cross-sectional view illustrating a manufacturing process of a TFT.

FIG. 8 is a cross-sectional view illustrating a method for manufacturing a semiconductor film.

FIG. 9 is a sectional view illustrating a gettering method.

FIG. 10 is a cross-sectional view illustrating a manufacturing process of a semiconductor device including a driver circuit portion and a pixel portion.

FIG. 11 is a cross-sectional view illustrating a manufacturing process of a semiconductor device including a driver circuit portion and a pixel portion.

FIG. 12 is a cross-sectional view illustrating a manufacturing process of a semiconductor device including a driver circuit portion and a pixel portion.

FIG. 13 is a top view illustrating a structure of a pixel portion.

FIG. 14 illustrates a structure of a liquid crystal display device obtained by the present invention.

FIG. 15 illustrates a structure of a light-emitting device obtained by the present invention.

FIG. 16 is a diagram illustrating a configuration of a heat treatment apparatus of the present invention.

FIG. 17 is a micrograph of a semiconductor film which has been subjected to an activation treatment by the heat treatment method of the present invention.

FIG. 18 illustrates an example of a semiconductor device.

FIG. 19 illustrates an example of a semiconductor device.

FIG. 20 illustrates a configuration of a projector.

21A and 21B are a top view and a cross-sectional view of a pixel portion.

FIG. 22 is a cumulative frequency graph showing a distribution of off-state current of a TFT in a plurality of samples.

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Claims (15)

[Claims] 1. A heat treatment method for heating an object to be processed by irradiation of a lamp light source, wherein the lamp light source has a light emission time of 0.1 to 20 seconds, and the lamp light source emits the light a plurality of times. A heat treatment method characterized by repeating. 2. A heat treatment method for heating an object to be processed by irradiation of a lamp light source, wherein the irradiation of the lamp light source is performed in a pulsed manner so that the maximum temperature of the irradiation area is maintained for 0.5 to 5 seconds. A heat treatment method characterized by repeating the above steps. 3. A heat treatment method in which an object to be processed is held in a processing chamber filled with a refrigerant and the object to be processed is heated by radiation of a lamp light source. A heat treatment method, wherein the heat is held for a period of 1 to 20 seconds and the radiation of the lamp light source is repeated a plurality of times. 4. A heat treatment method for holding an object to be processed in a processing chamber filled with a refrigerant and heating the object to be processed by radiation of a lamp light source. A heat treatment method, wherein the radiation of the lamp light source is repeated a plurality of times so as to take 5 to 5 seconds. 5. A heat treatment method for holding an object to be processed in a processing chamber filled with a refrigerant and heating the object to be processed by radiation of a lamp light source, wherein the supply amount of the refrigerant is reduced and the lamp is heated. The light source is turned on, the radiation of the lamp light source is held for a period of 0.1 to 20 seconds, the lamp light source is turned off, and the process of increasing the supply amount of the refrigerant is defined as one cycle. Is repeated a plurality of times. 6. A heat treatment method for holding an object to be processed in a processing chamber filled with a refrigerant and heating the object to be processed by radiation of a lamp light source, wherein the supply amount of the refrigerant is reduced and the lamp is heated. After turning on the light source and holding the maximum temperature of the object to be processed for 0.5 to 5 seconds, the lamp light source is turned off, and the process of simultaneously increasing the supply amount of the refrigerant is defined as one cycle. A heat treatment method characterized by repeating a plurality of times. 7. A lamp light source, a power source for causing the lamp light source to blink in a pulsed manner, a stage on which an object to be processed is mounted, and the object to be processed can be heated by radiation from the lamp light source. A heat treatment apparatus comprising: a processing chamber; and a unit for supplying a refrigerant to the processing chamber. 8. A lamp light source, a power supply for causing the lamp light source to blink in a pulsed manner, a stage on which an object to be processed is mounted, and the object to be processed can be heated by radiation from the lamp light source. A heat treatment apparatus comprising: a processing chamber; and a unit configured to supply a refrigerant to the processing chamber in accordance with flickering of the lamp light source and increase or decrease the supply amount. 9. A lamp light source, a power source for causing the lamp light source to blink in a pulsed manner, a stage on which an object to be processed is mounted, and the object to be processed can be heated by radiation from the lamp light source. A heat treatment apparatus, comprising: a processing chamber; transport means capable of moving the stage in one direction in the processing chamber; and means for supplying a coolant to the processing chamber. 10. A lamp light source, a power supply for causing the lamp light source to blink in a pulsed manner, and a stage for mounting an object to be processed,
A processing chamber capable of heating the object to be processed by radiation from the lamp light source, a conveying unit capable of moving the stage in one direction in the processing chamber, and the flashing of the lamp light source Means for supplying a refrigerant to the processing chamber and increasing or decreasing the supply amount. 11. A step of forming a semiconductor film on a light-transmitting substrate, a step of forming a second insulating film on the semiconductor film, a step of forming a conductive film on the second insulating film, Forming a semiconductor region of one conductivity type by doping one conductivity type impurity into the film, and intermittently irradiating radiation from a lamp light source a plurality of times from the light-transmitting substrate side; Activating a semiconductor region. 12. A step of forming a semiconductor film on a light-transmitting substrate, a step of forming a second insulating film on the semiconductor film, and forming a light-absorbing first conductive film on the second insulating film. Performing a step of forming a light-reflective second conductive film on the first conductive film, and doping the semiconductor film with one-conductivity-type impurity to form a one-conductivity-type semiconductor region; Activating the one conductivity type semiconductor region by intermittently irradiating radiation from a lamp light source a plurality of times from the translucent substrate side. 13. A first step of forming an amorphous semiconductor film on one main surface of a translucent substrate, and forming a crystalline semiconductor film by adding a metal element to the amorphous semiconductor film and then crystallizing the same. A second step of forming, a third step of forming a conductive film overlying the crystalline semiconductor film over a part of the crystalline semiconductor film, and a semiconductor region of one conductivity type in the crystalline semiconductor film. And a fifth step of intermittently irradiating radiation from a lamp light source a plurality of times from a surface opposite to the one main surface of the light-transmitting substrate. Method for manufacturing the device. 14. A first step of forming an amorphous semiconductor film on one main surface of a light-transmitting substrate, and forming a crystalline semiconductor film by adding a metal element to the amorphous semiconductor film and then crystallizing the same. A second step of forming, a third step of forming a conductive film overlying a part of the crystalline semiconductor film over the crystalline semiconductor film, and a semiconductor in which phosphorus is added to the crystalline semiconductor film. A fourth step of forming a region; and a fifth step of intermittently irradiating the radiation from the lamp light source a plurality of times from a surface opposite to the one main surface of the translucent substrate. A method for manufacturing a semiconductor device. 15. The method according to claim 13 or claim 14, wherein
The metal element is Fe, Co, Ni, Ru, Rh, Pd,
A method for manufacturing a semiconductor device, which is one or more kinds selected from Os, Ir, Pt, Cu, and Au.