JP2003173970A5 - - Google Patents

Claims (16)

  Introducing monosilane, a rare gas, and nitrogen as source gases into the deposition chamber and generating plasma to form a semiconductor film containing a rare gas element and nitrogen and having an amorphous structure on the surface. A method for manufacturing a semiconductor film having an amorphous structure.   2. The method for manufacturing a semiconductor film having an amorphous structure according to claim 1, wherein when the plasma is generated, a pressure in the deposition chamber is 2.666 Pa to 133.3 Pa. 3. The method for manufacturing a semiconductor film having an amorphous structure according to claim 1, wherein a flow rate ratio of nitrogen to the rare gas (N ₂ / rare gas) is controlled to 0.2 to 5. 5. 4. The method for manufacturing a semiconductor film having an amorphous structure according to claim 1, wherein an RF power density for generating the plasma is 0.0017 W / cm ^{2 to 1} W / cm ^2. . In any one of claims 1 to 4, wherein said semiconductor film having an amorphous structure, 1 × 10 ¹⁸ / cm ³ to ~1 × 10 ²² / cm ³ concentration of nitrogen including it in the film A method for manufacturing a semiconductor film having an amorphous structure. In any one of claims 1 to 5, wherein the semiconductor film having an amorphous ^{structure, 1 × 10 18 / cm 3} ~1 × 10 22 / cm 3 of a rare gas element concentration including it in the film A method for manufacturing a semiconductor film having an amorphous structure.   7. The semiconductor film having an amorphous structure according to claim 1, wherein the rare gas element is one or a plurality selected from He, Ne, Ar, Kr, and Xe. Manufacturing method. 8. The flow rate ratio (SiH ₄ : noble gas) between the rare gas and the monosilane introduced into the film formation chamber is controlled to be 0.1: 99.9 to 1: 9 according to claim 1. A method for manufacturing a semiconductor film. 8. The semiconductor according to claim 1, wherein a flow ratio (SiH ₄ : noble gas) of the rare gas and the monosilane introduced into the deposition chamber is controlled to 1:99 to 5:95. A method for producing a film. The film contains a rare gas element having a concentration of 1 × 10 ¹⁸ / cm ³ to 1 × 10 ²² / cm ³ and nitrogen having a concentration of 1 × 10 ²⁰ / cm ³ to 1 × 10 ²¹ / cm ^3. A semiconductor film having an amorphous structure. Forming a first semiconductor film having an amorphous structure on the insulating surface,
Adding a metal element to the first semiconductor film having the amorphous structure;
The first semiconductor film to form a first semiconductor film having a crystal structure is crystallized,
Forming a barrier layer on the surface of the first semiconductor film having the crystal structure;
A second semiconductor film containing a rare gas element and nitrogen on the barrier layer is formed,
Heating to the removing or reducing the metal element in the first semiconductor film having a crystalline structure,
The method for manufacturing a semiconductor device comprising the Turkey to remove the second semiconductor film. In claim 11, the production of the second semiconductor film, a semiconductor device, wherein a monosilane rare gas and nitrogen is formed by introducing a raw material gas plasma CVD method for generating plasma in the deposition chamber Method. 13. The second semiconductor film according to claim 11 or 12, wherein the second semiconductor film is 1 × 10 ¹⁸ / Cm ^Three ~ 1x10 ^{twenty two} / Cm ^Three A method for manufacturing a semiconductor device comprising nitrogen at a concentration of 14. The second semiconductor film according to claim 11, wherein the second semiconductor film is 1 × 10 6 in the film. ¹⁸ / Cm ^Three ~ 1x10 ^{twenty two} / Cm ^Three A method for manufacturing a semiconductor device, comprising a rare gas element having a concentration of 1 to 5. 15. The method for manufacturing a semiconductor device according to claim 11, wherein the rare gas element is one or a plurality selected from He, Ne, Ar, Kr, and Xe. 16. The metal element according to claim 11, wherein the metal element is one or more selected from Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. A method for manufacturing a semiconductor device.