JP2005510081A5 - - Google Patents
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- Publication number
- JP2005510081A5 JP2005510081A5 JP2003546385A JP2003546385A JP2005510081A5 JP 2005510081 A5 JP2005510081 A5 JP 2005510081A5 JP 2003546385 A JP2003546385 A JP 2003546385A JP 2003546385 A JP2003546385 A JP 2003546385A JP 2005510081 A5 JP2005510081 A5 JP 2005510081A5
- Authority
- JP
- Japan
- Prior art keywords
- growth
- low
- density
- plasma
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 208000012868 Overgrowth Diseases 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01127834A EP1315199A1 (en) | 2001-11-22 | 2001-11-22 | Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition |
| PCT/EP2002/009922 WO2003044839A2 (en) | 2001-11-22 | 2002-09-05 | Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005510081A JP2005510081A (ja) | 2005-04-14 |
| JP2005510081A5 true JP2005510081A5 (enExample) | 2006-01-05 |
Family
ID=8179316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003546385A Pending JP2005510081A (ja) | 2001-11-22 | 2002-09-05 | 低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7115895B2 (enExample) |
| EP (1) | EP1315199A1 (enExample) |
| JP (1) | JP2005510081A (enExample) |
| CN (1) | CN100345254C (enExample) |
| AU (1) | AU2002335310A1 (enExample) |
| WO (1) | WO2003044839A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855436B2 (en) * | 2003-05-30 | 2005-02-15 | International Business Machines Corporation | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal |
| US7678645B2 (en) | 2003-03-26 | 2010-03-16 | Eidgenoessische Technische Hochschule Zuerich | Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices |
| ES2316680T3 (es) | 2003-09-05 | 2009-04-16 | Epispeed S.A. | Laseres de ingaas/gaas sobre silicio producidos mediante lepecvd y mocvd. |
| US8882909B2 (en) | 2004-04-30 | 2014-11-11 | Dichroic Cell S.R.L. | Method for producing virtual Ge substrates for III/V-integration on Si(001) |
| JP2007250903A (ja) * | 2006-03-16 | 2007-09-27 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
| WO2008017457A1 (en) * | 2006-08-11 | 2008-02-14 | Paul Scherrer Institut | Light modulators comprising si-ge quantum well layers |
| WO2008023260A2 (en) | 2006-08-25 | 2008-02-28 | Hôpitaux Universitaires De Geneve | System and method for detecting a specific cognitive-emotional state in a subject |
| FR2914783A1 (fr) * | 2007-04-03 | 2008-10-10 | St Microelectronics Sa | Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant. |
| US20110017127A1 (en) * | 2007-08-17 | 2011-01-27 | Epispeed Sa | Apparatus and method for producing epitaxial layers |
| US8237126B2 (en) | 2007-08-17 | 2012-08-07 | Csem Centre Suisse D'electronique Et De Mictrotechnique Sa | X-ray imaging device and method for the manufacturing thereof |
| EP2251897B1 (en) * | 2009-05-13 | 2016-01-06 | Siltronic AG | A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side |
| TWI562195B (en) | 2010-04-27 | 2016-12-11 | Pilegrowth Tech S R L | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication |
| CN103165420B (zh) * | 2011-12-14 | 2015-11-18 | 中国科学院上海微系统与信息技术研究所 | 一种SiGe中嵌入超晶格制备应变Si的方法 |
| KR102142707B1 (ko) * | 2013-06-19 | 2020-08-07 | 엘지이노텍 주식회사 | 반도체 기판, 발광 소자 및 전자 소자 |
| CN105632927B (zh) * | 2014-10-30 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | Pmos晶体管的形成方法 |
| KR102465536B1 (ko) * | 2016-06-08 | 2022-11-14 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5241197A (en) * | 1989-01-25 | 1993-08-31 | Hitachi, Ltd. | Transistor provided with strained germanium layer |
| EP0380077A3 (en) * | 1989-01-25 | 1990-09-12 | Hitachi, Ltd. | Transistor provided with strained germanium layer |
| US5442205A (en) * | 1991-04-24 | 1995-08-15 | At&T Corp. | Semiconductor heterostructure devices with strained semiconductor layers |
| KR100441469B1 (ko) * | 1999-03-12 | 2004-07-23 | 인터내셔널 비지네스 머신즈 코포레이션 | 전계 효과 장치용 고속 게르마늄 채널 이종구조물 |
-
2001
- 2001-11-22 EP EP01127834A patent/EP1315199A1/en not_active Withdrawn
-
2002
- 2002-09-05 JP JP2003546385A patent/JP2005510081A/ja active Pending
- 2002-09-05 US US10/496,245 patent/US7115895B2/en not_active Expired - Fee Related
- 2002-09-05 AU AU2002335310A patent/AU2002335310A1/en not_active Abandoned
- 2002-09-05 CN CNB028273095A patent/CN100345254C/zh not_active Expired - Fee Related
- 2002-09-05 WO PCT/EP2002/009922 patent/WO2003044839A2/en not_active Ceased
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