JP2003347229A5 - - Google Patents

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Publication number
JP2003347229A5
JP2003347229A5 JP2002158608A JP2002158608A JP2003347229A5 JP 2003347229 A5 JP2003347229 A5 JP 2003347229A5 JP 2002158608 A JP2002158608 A JP 2002158608A JP 2002158608 A JP2002158608 A JP 2002158608A JP 2003347229 A5 JP2003347229 A5 JP 2003347229A5
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JP
Japan
Prior art keywords
film
silicon
semiconductor device
germanium
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002158608A
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English (en)
Japanese (ja)
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JP2003347229A (ja
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Publication date
Application filed filed Critical
Priority to JP2002158608A priority Critical patent/JP2003347229A/ja
Priority claimed from JP2002158608A external-priority patent/JP2003347229A/ja
Priority to US10/440,102 priority patent/US6897129B2/en
Priority to TW092113887A priority patent/TWI260049B/zh
Priority to KR10-2003-0034368A priority patent/KR20030094018A/ko
Publication of JP2003347229A publication Critical patent/JP2003347229A/ja
Priority to US11/103,465 priority patent/US20050173705A1/en
Publication of JP2003347229A5 publication Critical patent/JP2003347229A5/ja
Priority to US11/969,154 priority patent/US8878244B2/en
Pending legal-status Critical Current

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JP2002158608A 2002-05-31 2002-05-31 半導体装置の製造方法および半導体装置 Pending JP2003347229A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002158608A JP2003347229A (ja) 2002-05-31 2002-05-31 半導体装置の製造方法および半導体装置
US10/440,102 US6897129B2 (en) 2002-05-31 2003-05-19 Fabrication method of semiconductor device and semiconductor device
TW092113887A TWI260049B (en) 2002-05-31 2003-05-22 Fabrication method of semiconductor device and semiconductor device
KR10-2003-0034368A KR20030094018A (ko) 2002-05-31 2003-05-29 반도체 장치의 제조 방법 및 반도체 장치
US11/103,465 US20050173705A1 (en) 2002-05-31 2005-04-12 Fabrication method of semiconductor device and semiconductor device
US11/969,154 US8878244B2 (en) 2002-05-31 2008-01-03 Semiconductor device having strained silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002158608A JP2003347229A (ja) 2002-05-31 2002-05-31 半導体装置の製造方法および半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006237138A Division JP4696037B2 (ja) 2006-09-01 2006-09-01 半導体装置の製造方法および半導体装置

Publications (2)

Publication Number Publication Date
JP2003347229A JP2003347229A (ja) 2003-12-05
JP2003347229A5 true JP2003347229A5 (enExample) 2005-09-08

Family

ID=29561550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002158608A Pending JP2003347229A (ja) 2002-05-31 2002-05-31 半導体装置の製造方法および半導体装置

Country Status (4)

Country Link
US (3) US6897129B2 (enExample)
JP (1) JP2003347229A (enExample)
KR (1) KR20030094018A (enExample)
TW (1) TWI260049B (enExample)

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KR100873299B1 (ko) * 2007-08-20 2008-12-11 주식회사 실트론 Ｓｓｏｉ 기판의 제조방법
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CN108350602B (zh) * 2016-03-18 2020-11-27 株式会社Lg化学 用于制造多晶硅的超高温沉淀工艺
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