JP2005510081A - 低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法 - Google Patents

低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法 Download PDF

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JP2005510081A
JP2005510081A JP2003546385A JP2003546385A JP2005510081A JP 2005510081 A JP2005510081 A JP 2005510081A JP 2003546385 A JP2003546385 A JP 2003546385A JP 2003546385 A JP2003546385 A JP 2003546385A JP 2005510081 A JP2005510081 A JP 2005510081A
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growth
layer
substrate
substrate temperature
lepecvd
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JP2005510081A5 (enExample
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ハンス・フォン・ケーネル
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Eidgenoessische Technische Hochschule Zurich ETHZ
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Eidgenoessische Technische Hochschule Zurich ETHZ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2003546385A 2001-11-22 2002-09-05 低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法 Pending JP2005510081A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01127834A EP1315199A1 (en) 2001-11-22 2001-11-22 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
PCT/EP2002/009922 WO2003044839A2 (en) 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
JP2005510081A true JP2005510081A (ja) 2005-04-14
JP2005510081A5 JP2005510081A5 (enExample) 2006-01-05

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JP2003546385A Pending JP2005510081A (ja) 2001-11-22 2002-09-05 低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法

Country Status (6)

Country Link
US (1) US7115895B2 (enExample)
EP (1) EP1315199A1 (enExample)
JP (1) JP2005510081A (enExample)
CN (1) CN100345254C (enExample)
AU (1) AU2002335310A1 (enExample)
WO (1) WO2003044839A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267969A (ja) * 2009-05-13 2010-11-25 Siltronic Ag おもて面と裏面とを有するシリコン単結晶基板及び前記おもて面上に堆積されたＳｉＧｅの層を含んでなるウェーハを製造する方法
KR20140147250A (ko) * 2013-06-19 2014-12-30 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
US7678645B2 (en) 2003-03-26 2010-03-16 Eidgenoessische Technische Hochschule Zuerich Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
ES2316680T3 (es) 2003-09-05 2009-04-16 Epispeed S.A. Laseres de ingaas/gaas sobre silicio producidos mediante lepecvd y mocvd.
US8882909B2 (en) 2004-04-30 2014-11-11 Dichroic Cell S.R.L. Method for producing virtual Ge substrates for III/V-integration on Si(001)
JP2007250903A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
WO2008017457A1 (en) * 2006-08-11 2008-02-14 Paul Scherrer Institut Light modulators comprising si-ge quantum well layers
WO2008023260A2 (en) 2006-08-25 2008-02-28 Hôpitaux Universitaires De Geneve System and method for detecting a specific cognitive-emotional state in a subject
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
US20110017127A1 (en) * 2007-08-17 2011-01-27 Epispeed Sa Apparatus and method for producing epitaxial layers
US8237126B2 (en) 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
CN103165420B (zh) * 2011-12-14 2015-11-18 中国科学院上海微系统与信息技术研究所 一种SiGe中嵌入超晶格制备应变Si的方法
CN105632927B (zh) * 2014-10-30 2018-09-07 中芯国际集成电路制造(上海)有限公司 Pmos晶体管的形成方法
KR102465536B1 (ko) * 2016-06-08 2022-11-14 삼성전자주식회사 반도체 장치의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
EP0380077A3 (en) * 1989-01-25 1990-09-12 Hitachi, Ltd. Transistor provided with strained germanium layer
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
KR100441469B1 (ko) * 1999-03-12 2004-07-23 인터내셔널 비지네스 머신즈 코포레이션 전계 효과 장치용 고속 게르마늄 채널 이종구조물

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267969A (ja) * 2009-05-13 2010-11-25 Siltronic Ag おもて面と裏面とを有するシリコン単結晶基板及び前記おもて面上に堆積されたＳｉＧｅの層を含んでなるウェーハを製造する方法
KR20140147250A (ko) * 2013-06-19 2014-12-30 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
KR102142707B1 (ko) * 2013-06-19 2020-08-07 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자

Also Published As

Publication number Publication date
AU2002335310A1 (en) 2003-06-10
US20050116226A1 (en) 2005-06-02
AU2002335310A8 (en) 2003-06-10
EP1315199A1 (en) 2003-05-28
CN1615540A (zh) 2005-05-11
US7115895B2 (en) 2006-10-03
WO2003044839A3 (en) 2003-10-30
CN100345254C (zh) 2007-10-24
WO2003044839A2 (en) 2003-05-30

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