AU2002335310A1 - Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition - Google Patents

Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Info

Publication number
AU2002335310A1
AU2002335310A1 AU2002335310A AU2002335310A AU2002335310A1 AU 2002335310 A1 AU2002335310 A1 AU 2002335310A1 AU 2002335310 A AU2002335310 A AU 2002335310A AU 2002335310 A AU2002335310 A AU 2002335310A AU 2002335310 A1 AU2002335310 A1 AU 2002335310A1
Authority
AU
Australia
Prior art keywords
formation
low
vapor deposition
chemical vapor
plasma enhanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002335310A
Other languages
English (en)
Other versions
AU2002335310A8 (en
Inventor
Hans Von Kanel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eidgenoessische Technische Hochschule Zurich ETHZ
Original Assignee
Eidgenoessische Technische Hochschule Zurich ETHZ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eidgenoessische Technische Hochschule Zurich ETHZ filed Critical Eidgenoessische Technische Hochschule Zurich ETHZ
Publication of AU2002335310A1 publication Critical patent/AU2002335310A1/en
Publication of AU2002335310A8 publication Critical patent/AU2002335310A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
AU2002335310A 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition Abandoned AU2002335310A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01127834A EP1315199A1 (en) 2001-11-22 2001-11-22 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
EP01127834.8 2001-11-22
PCT/EP2002/009922 WO2003044839A2 (en) 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
AU2002335310A1 true AU2002335310A1 (en) 2003-06-10
AU2002335310A8 AU2002335310A8 (en) 2003-06-10

Family

ID=8179316

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002335310A Abandoned AU2002335310A1 (en) 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Country Status (6)

Country Link
US (1) US7115895B2 (enExample)
EP (1) EP1315199A1 (enExample)
JP (1) JP2005510081A (enExample)
CN (1) CN100345254C (enExample)
AU (1) AU2002335310A1 (enExample)
WO (1) WO2003044839A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
US7678645B2 (en) 2003-03-26 2010-03-16 Eidgenoessische Technische Hochschule Zuerich Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
ES2316680T3 (es) 2003-09-05 2009-04-16 Epispeed S.A. Laseres de ingaas/gaas sobre silicio producidos mediante lepecvd y mocvd.
US8882909B2 (en) 2004-04-30 2014-11-11 Dichroic Cell S.R.L. Method for producing virtual Ge substrates for III/V-integration on Si(001)
JP2007250903A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
WO2008017457A1 (en) * 2006-08-11 2008-02-14 Paul Scherrer Institut Light modulators comprising si-ge quantum well layers
WO2008023260A2 (en) 2006-08-25 2008-02-28 Hôpitaux Universitaires De Geneve System and method for detecting a specific cognitive-emotional state in a subject
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
US20110017127A1 (en) * 2007-08-17 2011-01-27 Epispeed Sa Apparatus and method for producing epitaxial layers
US8237126B2 (en) 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
EP2251897B1 (en) * 2009-05-13 2016-01-06 Siltronic AG A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
CN103165420B (zh) * 2011-12-14 2015-11-18 中国科学院上海微系统与信息技术研究所 一种SiGe中嵌入超晶格制备应变Si的方法
KR102142707B1 (ko) * 2013-06-19 2020-08-07 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
CN105632927B (zh) * 2014-10-30 2018-09-07 中芯国际集成电路制造(上海)有限公司 Pmos晶体管的形成方法
KR102465536B1 (ko) * 2016-06-08 2022-11-14 삼성전자주식회사 반도체 장치의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
EP0380077A3 (en) * 1989-01-25 1990-09-12 Hitachi, Ltd. Transistor provided with strained germanium layer
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
KR100441469B1 (ko) * 1999-03-12 2004-07-23 인터내셔널 비지네스 머신즈 코포레이션 전계 효과 장치용 고속 게르마늄 채널 이종구조물

Also Published As

Publication number Publication date
US20050116226A1 (en) 2005-06-02
AU2002335310A8 (en) 2003-06-10
EP1315199A1 (en) 2003-05-28
CN1615540A (zh) 2005-05-11
US7115895B2 (en) 2006-10-03
WO2003044839A3 (en) 2003-10-30
CN100345254C (zh) 2007-10-24
WO2003044839A2 (en) 2003-05-30
JP2005510081A (ja) 2005-04-14

Similar Documents

Publication Publication Date Title
AU2002335310A1 (en) Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
AU2002361557A1 (en) Method of manufacturing high-mobility organic thin films using organic vapor phase deposition
AU2002346665A1 (en) Chemical vapor deposition vaporizer
AU2001229351A1 (en) Manufacturing medical devices by vapor deposition
AU2002343583A1 (en) Chemical vapor deposition system
AU2002333601A1 (en) Metal nitride deposition by ald using gettering reactant
AU2003228402A1 (en) Vapor deposition of silicon dioxide nanolaminates
AU2003248850A1 (en) Vapor deposition of tungsten nitride
AU2003269049A1 (en) Vapor deposition method of low dielectric insulating film, thin film transistor using the same and preparation method thereof
AU2003284404A1 (en) Method of plasma doping
AUPQ861500A0 (en) Plasma source for spectrometry
AU2002306554A1 (en) Atmospheric pressure plasma enhanced abatement of semiconductor process effluent species
AU2002340316A1 (en) Plasma chemical vapor deposition methods and apparatus
AU2002223088A1 (en) Chemical plasma cathode
IL176787A0 (en) An apparatus for the manufacture of chemical vapor deposited domes
AU2003289471A1 (en) High electron mobility epitaxial substrate
AU2002249829A1 (en) Chemical vapor deposition devices and methods
AU2002255471A1 (en) Physical vapor deposition components and methods of formation
AU2001255358A1 (en) Methods for chemical vapor deposition of titanium-silicon-nitrogen films
AU2002353021A1 (en) Chemical vapor deposition reactor
AU2003233581A1 (en) Method of depositing an oxide film by chemical vapor deposition
AU2003223991A1 (en) Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
AU2003282034A1 (en) Gas phase deposition of perfluorinated alkyl silanes
AU2001253817A1 (en) Communications systems which avoid sources of interference
AU2002350311A1 (en) Plasma analyser

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase