JP2006519482A5 - - Google Patents
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- Publication number
- JP2006519482A5 JP2006519482A5 JP2006501464A JP2006501464A JP2006519482A5 JP 2006519482 A5 JP2006519482 A5 JP 2006519482A5 JP 2006501464 A JP2006501464 A JP 2006501464A JP 2006501464 A JP2006501464 A JP 2006501464A JP 2006519482 A5 JP2006519482 A5 JP 2006519482A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma chamber
- sccm
- plasma
- silicon
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10308381.2 | 2003-02-27 | ||
| DE10308381A DE10308381B4 (de) | 2003-02-27 | 2003-02-27 | Verfahren zur Abscheidung von Silizium |
| PCT/DE2004/000066 WO2004076713A1 (de) | 2003-02-27 | 2004-01-20 | Verfahren zur abscheidung von silizium |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006519482A JP2006519482A (ja) | 2006-08-24 |
| JP2006519482A5 true JP2006519482A5 (enExample) | 2007-01-25 |
| JP4733627B2 JP4733627B2 (ja) | 2011-07-27 |
Family
ID=32863924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006501464A Expired - Fee Related JP4733627B2 (ja) | 2003-02-27 | 2004-01-20 | 珪素の析出法 |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US7981776B2 (enExample) |
| EP (1) | EP1601813B1 (enExample) |
| JP (1) | JP4733627B2 (enExample) |
| KR (1) | KR101127047B1 (enExample) |
| CN (1) | CN1754007A (enExample) |
| AT (1) | ATE403763T1 (enExample) |
| AU (1) | AU2004215243B2 (enExample) |
| CA (1) | CA2517598C (enExample) |
| CY (1) | CY1108484T1 (enExample) |
| DE (2) | DE10308381B4 (enExample) |
| ES (1) | ES2311792T3 (enExample) |
| PT (1) | PT1601813E (enExample) |
| RU (1) | RU2005129984A (enExample) |
| SI (1) | SI1601813T1 (enExample) |
| WO (1) | WO2004076713A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216624A (ja) * | 2005-02-01 | 2006-08-17 | Mitsubishi Heavy Ind Ltd | 太陽電池及び太陽電池の製造方法 |
| US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| TWI350006B (en) * | 2007-10-05 | 2011-10-01 | Ind Tech Res Inst | Plasma enhanced thin film deposition method |
| JP2011503848A (ja) | 2007-11-02 | 2011-01-27 | アプライド マテリアルズ インコーポレイテッド | 堆積プロセス間のプラズマ処置 |
| JP5005588B2 (ja) | 2008-03-14 | 2012-08-22 | 東洋自動機株式会社 | 袋移送及び傾き修正装置 |
| RU2367600C1 (ru) * | 2008-04-16 | 2009-09-20 | Борис Георгиевич Грибов | Способ получения кремния высокой чистоты |
| DE102008063737A1 (de) * | 2008-12-18 | 2010-06-24 | Forschungszentrum Jülich GmbH | Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat |
| TW201120942A (en) * | 2009-12-08 | 2011-06-16 | Ind Tech Res Inst | Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition |
| CN102108494B (zh) * | 2009-12-23 | 2013-01-16 | 财团法人工业技术研究院 | 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置 |
| CN102031503B (zh) * | 2010-09-29 | 2012-12-05 | 理想能源设备(上海)有限公司 | 硅薄膜的沉积方法 |
| US8642376B2 (en) * | 2011-05-16 | 2014-02-04 | Applied Materials, Inc. | Methods for depositing a material atop a substrate |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| DE102014007766B4 (de) * | 2014-05-21 | 2025-10-16 | Christian Bauch | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
| CN114242833A (zh) * | 2021-11-18 | 2022-03-25 | 国家电投集团科学技术研究院有限公司 | 异质结太阳电池的硅片处理方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5334423A (en) * | 1993-01-28 | 1994-08-02 | United Solar Systems Corp. | Microwave energized process for the preparation of high quality semiconductor material |
| JPH09232235A (ja) * | 1995-02-24 | 1997-09-05 | Mitsui Toatsu Chem Inc | 光電変換素子 |
| JPH1081973A (ja) | 1996-03-18 | 1998-03-31 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマｃｖｄ装置 |
| US5824940A (en) | 1997-01-27 | 1998-10-20 | Alfred University | Ceramic bullet-proof fabric |
| JPH11233801A (ja) * | 1998-02-17 | 1999-08-27 | Canon Inc | 微結晶シリコン膜の形成方法、および光起電力素子 |
| JP4335389B2 (ja) * | 1999-11-24 | 2009-09-30 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| JP3857024B2 (ja) * | 2000-07-17 | 2006-12-13 | 株式会社神戸製鋼所 | 微結晶シリコン薄膜の形成方法 |
| JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| JP4397391B2 (ja) * | 2006-10-30 | 2010-01-13 | 信越フィルム株式会社 | ガスバリア性プラスチックおよびプラスチックフィルムの製造方法 |
-
2003
- 2003-02-27 DE DE10308381A patent/DE10308381B4/de not_active Expired - Lifetime
-
2004
- 2004-01-20 DE DE502004007776T patent/DE502004007776D1/de not_active Expired - Lifetime
- 2004-01-20 ES ES04703337T patent/ES2311792T3/es not_active Expired - Lifetime
- 2004-01-20 SI SI200430905T patent/SI1601813T1/sl unknown
- 2004-01-20 CA CA2517598A patent/CA2517598C/en not_active Expired - Fee Related
- 2004-01-20 PT PT04703337T patent/PT1601813E/pt unknown
- 2004-01-20 US US10/547,118 patent/US7981776B2/en not_active Expired - Fee Related
- 2004-01-20 EP EP04703337A patent/EP1601813B1/de not_active Expired - Lifetime
- 2004-01-20 AT AT04703337T patent/ATE403763T1/de active
- 2004-01-20 WO PCT/DE2004/000066 patent/WO2004076713A1/de not_active Ceased
- 2004-01-20 RU RU2005129984/02A patent/RU2005129984A/ru not_active Application Discontinuation
- 2004-01-20 JP JP2006501464A patent/JP4733627B2/ja not_active Expired - Fee Related
- 2004-01-20 AU AU2004215243A patent/AU2004215243B2/en not_active Ceased
- 2004-01-20 CN CNA2004800052636A patent/CN1754007A/zh active Pending
- 2004-01-20 KR KR1020057015528A patent/KR101127047B1/ko not_active Expired - Fee Related
-
2008
- 2008-11-06 CY CY20081101261T patent/CY1108484T1/el unknown
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