CN105977342A - 一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺 - Google Patents
一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺 Download PDFInfo
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Abstract
本发明公开了一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺,该工艺具体为多晶硅进炉→炉内升温→多晶硅退火→抽真空→第一次调压→第一次淀积→第二次调压→第二次淀积→抽真空→清洗→抽真空→充氮→出舟。该工艺是将退火工艺与SiNx工艺合二为一,对于管式PECVD沉积技术可实现一次性实现退火与镀膜的工艺。有效地节约了机台的额外投入,防止了运输过程中产生的二次污染,进而简化工艺流程,减少了人力成本,同时节省了工艺的运行时间,可有效地消除了背面气泡,提高了太阳能电池片的少子寿命。
Description
技术领域
本发明属于太阳能行业领域,尤其涉及一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺。
背景技术
随着太阳能行业的不断发展,追求高效电池成为必然趋势。为提高太阳能电池的光电转化效率,目前的太阳能多晶硅电池,主要是通过在背面采用化学气相沉积技术在背面形成一层氧化铝及氮化硅作为背钝化膜。目前,较成熟的适合量产的氧化铝薄膜制备技术是等离子体化学气相沉积法(PECVD)和原子层沉积法(ALD)。原子层沉积技术由于具有优异的沉积均匀性和一致性,沉积参数如厚度,结构的高度可控性,沉积温度低等特点受到广泛的关注。且开路电压(VOC)相较于PECVD法具有明显的优势。然而,ALD法由于其工艺本身的特点(三甲基铝(TMA)与H2O的反应),经过背面氮化硅镀膜后,背面会出现气泡,产生气泡的原因主要是是薄膜的沉积过程中吸附了水分,高温中水分以气态形式逸出;另外是薄膜内还有一些未反应完全的有机基团,高温时有机基团发生分解,释放出气体。如若气泡较多将会一定程度上影响电池的开路电压,故ALD沉积的氧化铝需要经过退火工艺,方可达到最佳钝化效果。常规多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺是在扩散炉管内进行,约1h的工艺时间,待工艺结束后,再进行SiNx镀膜,过程中设计到卸舟,运输,裝舟;额外引入了二次污染的可能性,且耗费人力、物力、及设备的投入,并且多晶硅背面钝化膜气泡仍不能被完全消除。另外,对于量产工艺而言,退火工艺的增加无疑增加了整体工艺时间,进而提高了生产成本。
发明内容
本发明公开了一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺,该工艺具体为多晶硅进炉→炉内升温→多晶硅退火→抽真空→第一次调压→第一次淀积→第二次调压→第二次淀积→抽真空→清洗→抽真空→充氮→出舟;其具体的工艺参数范围及其步骤如下所示:
(1)多晶硅进炉——温度为400-500℃,氮气流量为1000-10000sccm,时间为140-500s;
(2)炉内升温——温度为400-500℃,氮气流量为0~100sccm,时间为500-600s;
(3)多晶硅退火——温度为400-500℃,通入氮气流量为1000-8000sccm,时间为600-3200s;
(4)抽真空——温度为400-500℃,首次慢速抽压使管内气体被抽出,时间为150-550s,随后再快速抽真空,时间为20-100s,保证真空状态,真空度达到10-2~103Pa。
(5)第一次调压——温度为400-500℃,氨气流量为1000-6000sccm,调试内部设置的压力为10-2~103Pa,时间为20-100s;
(6)第一次淀积——温度为400-500℃,硅烷/氨气流量比为1/4—1/7,进行管内的润洗时间为10-100s;再进行底层膜镀膜,膜镀时间为150-700s;
(7)第二次调压——温度为400-500℃,氨气流量为1000-6000sccm,调试内部设置的压力为1~10Pa,时间为40-150s;
(8)第二次淀积——温度为400-500℃,硅烷/氨气流量比为1/9—1/12,进行管内的润洗功能时间为10-100s;再进行顶层膜镀膜,膜镀时间约450-1000s;
(9)抽真空——温度为400-500℃,进行抽管内,尾气时间为20-100s;
(10)充气清洗——温度为400-500℃,氮气流量为5000-10000sccm,通入氮气进行清洗炉管,清洗时间约10-300s;
(11)抽真空——温度为400-500℃,时间为20-60s,进行管内抽尾气;
(12)充氮——温度为400-500℃,氮气流量为5000-10000sccm,时间为100-200s,使炉管内气压与外界压力达到平衡;
(13)最后出舟——温度为400-500℃,时间为100-400s,最终将镀膜片取出。
本发明公开了一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺,该工艺是将退火工艺与SiNx工艺合二为一,于管式PECVD上一次性实现退火与镀膜的工艺流程。有效地节约了机台的额外投入,防止了运输过程中产生的二次污染,进而简化工艺流程,减少了人力成本,同时节省了工艺的运行时间,可有效地消除了背面气泡,提高了少子寿命。
具体实施方式
实施例1
对多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺设置如下:
1)多晶硅进炉——温度为400℃,氮气流量为8000sccm,时间为200s;
2)炉内升温——温度为450℃,氮气流量为0sccm,时间为500s;
3)多晶硅退火——温度为400℃,通入氮气流量为8000sccm,时间为1000s;
4)抽真空——温度为400℃,首次慢速抽压使管内气体被抽出,时间为200s,随后再快速抽真空,时间为50s,保证真空状态,真空度达到5×10-4Pa。
5)第一次调压——温度为400℃,氨气流量为6000sccm,调试内部设置的压力为10-2Pa,时间为60s;
6)第一次淀积——温度为450℃,硅烷/氨气流量比为1/7,进行管内的润洗时间为60s;再进行底层膜镀膜,膜镀时间为150s;
7)第二次调压——温度为450℃,氨气流量为6000sccm,调试内部设置的压力为10Pa,时间为60s;
8)第二次淀积——温度为460℃,硅烷/氨气流量比为1/10,进行管内的润洗功能时间为50s;再进行顶层膜镀膜,膜镀时间为500s;
9)抽真空——温度为400℃,进行抽管内,尾气时间为60s;
10)清洗——温度为400℃,氮气流量为6000sccm,通入氮气进行清洗炉管,清洗时间为20s;
11)抽真空——温度为400℃,时间为60s,进行管内抽尾气;
12)充氮——温度为400℃,氮气流量为5000sccm,时间为150s,使炉管内气压与外界压力达到平衡;
13)出舟——温度为400℃,时间为200s。
经过该工艺结束后,最终将多晶硅镀膜片取出。通过扫面电子显微镜观察后,太阳能多晶硅电池片背面的气泡完全消除掉。
Claims (2)
1.一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺,其特征在于工艺为多晶硅进炉→炉内升温→多晶硅退火→抽真空→第一次调压→第一次淀积→第二次调压→第二次淀积→抽真空→清洗→抽真空→充氮→出舟。
2.依据权利要求1所述的退火合成工艺,其特征在于具体的工艺参数范围及其步骤如下所示:
(1)多晶硅进炉——温度为400-500℃,氮气流量为1000-10000sccm,时间为140-500s;
(2)炉内升温——温度为400-500℃,氮气流量为0~100sccm,时间为500-600s;
(3)多晶硅退火——温度为400-500℃,通入氮气流量为1000-8000sccm,时间为600-3200s;
(4)开始抽真空——温度为400-500℃,首次慢速抽压使管内气体被抽出,时间为150-550s,随后再快速抽真空,时间为20-100s,保证真空状态,真空度达到10-2~103Pa。
(5)第一次调压——温度为400-500℃,氨气流量为1000-6000sccm,调试内部设置的压力为10-2~103Pa,时间为20-100s;
(6)第一次淀积——温度为400-500℃,硅烷/氨气流量比为1/4—1/7,进行管内的润洗时间为10-100s;再进行底层膜镀膜,膜镀时间为150-700s;
(7)第二次调压——温度为400-500℃,氨气流量为1000-6000sccm,调试内部设置的压力为1~10Pa,时间为40-150s;
(8)第二次淀积——温度为400-500℃,硅烷/氨气流量比为1/9—1/12,进行管内的润洗功能时间为10-100s;再进行顶层膜镀膜,膜镀时间约450-1000s;
(9)抽真空——温度为400-500℃,进行抽管内,尾气时间为20-100s;
(10)充气清洗——温度为400-500℃,氮气流量为5000-10000sccm,通入氮气进行清洗炉管,清洗时间约10-300s;
(11)抽真空——温度为400-500℃,时间为20-60s,进行管内抽尾气;
(12)充氮——温度为400-500℃,氮气流量为5000-10000sccm,时间为100-200s,使炉管内气压与外界压力达到平衡;
(13)最后出舟——温度为400-500℃,时间为100-400s,最后将镀膜太阳能电池片取出。
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