CN112802734A - 硅片单侧膜淀积的方法 - Google Patents

硅片单侧膜淀积的方法 Download PDF

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CN112802734A
CN112802734A CN202011609514.9A CN202011609514A CN112802734A CN 112802734 A CN112802734 A CN 112802734A CN 202011609514 A CN202011609514 A CN 202011609514A CN 112802734 A CN112802734 A CN 112802734A
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film
silicon wafer
wafer
back film
ald
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方小磊
刘佳晶
于乐
陈涛
王宣欢
陈艳明
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Changchun Changguang Yuanchen Microelectronic Technology Co ltd
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Abstract

本发明公开了一种硅片单侧膜淀积的方法，提出硅片单侧膜淀积的方法，该方法为通过利用原子层沉积(ALD)设备在低温下实现硅片单侧薄膜淀积，即选择合适的背膜，并将此背膜通过一定的技术手段粘附在硅片的背面以防止硅片背面淀积薄膜，在淀积工艺完成后将背膜剥离即可。一般情况下，背膜可以在200℃‑300℃保持12小时而不熔化、收缩或变形。通过背膜的运用，实现了低温下(200℃‑300℃)硅片单侧膜沉积的目的，为后续工艺提供了方便条件。此种方法可应用于氧化铝，氧化铪等薄膜的制备，并且具有简便、易操作、成本低等优点。同时，制备的薄膜厚度线性可调(15A‑1000A)，均匀性好(均匀性小于0.5％)。

Description

硅片单侧膜淀积的方法
技术领域
本发明属于半导体芯片加工技术领域，尤其涉及一种硅片单侧膜淀积的方法。
背景技术
随着半导体工艺复杂度的增加，在硅片上淀积的膜数量越来越多，这些膜结构发挥着各种各样的作用，如表面钝化、器件隔离、器件保护、掺杂阻挡、金属层间介质等。其中，薄膜淀积是指在硅片衬底上沉淀一层膜的工艺，主要分为物理气相淀积(PVD)和化学气相淀积(CVD)两种方法。物理气相沉积使用物理的方法(如蒸发、溅射等)使镀膜材料气化并在基体表面沉积；化学气相淀积通过气体混合的化学反应在硅片表面淀积一层固体膜，硅片表面及其邻近的区域被加热来向反应系统提供附加的能量。
原子层沉积设备(ALD)是一种可以将物质以单原子膜的形式一层一层的沉积在基体表面方法。它与普通化学气相沉积有类似之处，但是在原子层沉积过程中，新一层原子膜的化学反应是直接与前一层相关联的，因此每次反应只能沉积一层原子。这种方式虽然沉积速度较慢，但是厚度和结构的高度一致性更能满足纳米级的工艺要求。
对于原子层沉积(ALD)设备，由于硅片正反两面都与工艺气体接触，因此这种方法制备出的薄膜会淀积在硅片两侧。在大部分情况下，硅片背面淀积的薄膜无关紧要，但是一些特殊产品要求只在硅片正面淀积薄膜，不允许背面淀积薄膜，比如双抛片或者键合硅片的背面需要制作其他结构。在这种情况下，需要对设备进行改造，或者开发特殊的工艺来满足产品加工需求。
发明内容
有鉴于此，本发明的目的在于提供一种硅片单侧膜淀积的方法，具体为：
一种硅片单侧膜淀积的方法，包括如下步骤：
S1在十级洁净室内设置室内温度22℃±1℃，设置室内湿度为45％±10％；
S2在洁净室内，人工将背膜粘贴在晶圆贴片环的一侧表面上且背膜粘贴后表面无褶皱；
S3将硅片放在操作台上且所述硅片的保护侧表面朝上，将所述背膜带有所述晶圆贴片环的一面与所述硅片的上表面进行面对面对准；
S4将所述背膜粘贴在硅片表面上，粘贴好的背膜与所述硅片之间无气泡；
S5将粘合在一起的背膜和硅片沿所述晶圆贴片环的内环剪下；
S6将步骤S5中的硅片送入ALD晶舟内进行薄膜沉积并设置所述ALD晶舟的工作参数；
S7根据步骤6中的设定，拟合薄膜厚度公式；
S8硅片加工完成，从ALD晶舟内取出并剥离所述背膜。
优选的，所述ALD晶舟内的参数设定为：所述ALD晶舟的速度旋转在2rmp至10rmp之间；三甲基铝的流量在200sccm至400sccm之间；氧气流量设为8sLm；氮气流量在0.3sLm至1sLm之间；所述ALD晶舟的腔体压力设为0.05torr至0.1torr之间；压力阀角度在85-88°之间；薄膜沉积的反应温度在250-300℃之间。
优选的，所述薄膜沉积过程中薄膜沉积的厚度公式为：
T＝0.0801L+14.75 (1)
其中，T为薄膜厚度，L为循环次数。
优选的，还包括用于剪切物体的美工刀、洁净手套。所述步骤S2中的背膜的厚度在20μm至200μm之间，所述背膜的宽度为210mm至250mm之间，所述背膜可承受的温度为250℃至300℃之间。
有益效果：本发明提出硅片单侧膜淀积的方法通过利用原子层沉积(ALD)设备在低温下实现硅片单侧薄膜淀积的方法，即选择合适的背膜，并将此背膜通过一定的技术手段粘附在硅片的背面以防止硅片背面淀积薄膜，在淀积工艺完成后将背膜剥离即可。一般情况下，背膜可以在200℃-300℃保持12小时而不熔化、收缩或变形。通过背膜的运用，实现了低温下(200℃-300℃)硅片单侧膜沉积的目的，为后续工艺提供了方便条件。此种方法可应用于氧化铝，氧化铪等薄膜的制备，并且具有简便、易操作、成本低等优点。同时，制备的薄膜厚度线性可调(15A-1000A)，均匀性好(均匀性小于0.5％)
附图说明
图1为本发明一种实施例的圆贴片环；
图2为本发明一种实施例的耐高温背膜；
图3为本发明一种实施例的背膜粘贴在晶圆贴片环；
图4为本发明一种实施例的手指垫在晶圆贴片环一侧示意图；
图5为本发明一种实施例的贴膜的效果图；
图6为本发明一种实施例的硅片从晶圆贴片环上剪下操作图；
图7为本发明一种实施例的背膜与硅片大小一致效果图；
图8为本发明一种实施例的背膜剥离示意图。
具体实施方式
为了使本技术领域的人员更好地理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分的实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
需要注意的是，本文使用术语第一、第二、第三等来描述各种部件或零件，但这些部件或零件不受这些术语的限制。这些术语仅用来区别一个部件或零件与另一部件或零件。术语诸如“第一”、“第二”和其他数值项在本文使用时不是暗示次序或顺序，除非由上下文清楚地指出。为了便于描述，本文使用空间相对术语，诸如“内部”、“外部”、“上端”、“下端”、“左侧”、“右侧”、“上部的”、“左”、“右”等，以描述本实施例中部件或零件的方位关系，但这些空间相对术语并不对技术特征在实际应用中的方位构成限制。
一种硅片单侧膜淀积的方法，包括如下步骤：
S1在十级洁净室内设置室内温度22℃±1℃，设置室内湿度为45％±10％；
S2在洁净室内，人工将背膜粘贴在晶圆贴片环的一侧表面上且背膜粘贴后表面无褶皱；
S3将硅片放在操作台上且所述硅片的保护侧表面朝上，将所述背膜带有所述晶圆贴片环的一面与所述硅片的上表面进行面对面对准；
S4将所述背膜粘贴在硅片表面上，粘贴好的背膜与所述硅片之间无气泡；
S5将粘合在一起的背膜和硅片沿所述晶圆贴片环的内环剪下；
S6将步骤S5中的硅片送入ALD晶舟内进行薄膜沉积并设置所述ALD晶舟的工作参数；
S7根据步骤6中的设定，拟合薄膜厚度公式；
S8硅片加工完成，从ALD晶舟内取出并剥离所述背膜。
本方法的具体操作主要为：首先，准备必要的材料和工具，包括如图1所示的晶圆贴片环、如图2所示的耐高温背膜、美工刀或剪子、美工刀片、无尘布、洁净手套等。背膜厚度一般在20-200um，宽度210-250mm，可以承受250-300℃。其中，所有工具需要使用异丙醇擦拭干净后再使用，且以下手动操作需要在十级洁净室完成，室内温度22±1℃，湿度45％±10％。其次如图3，使用美工刀切下适当长度的背膜并剥离背膜的衬底层后，将背膜牢固粘贴在晶圆贴片环上，要求背膜大于晶圆贴片环且平整无褶皱。然后，如图4，将硅片放在操作台上的无尘布上，待保护侧朝上，这里所述的保护侧是指不允许薄膜沉积侧的一侧。之后，将上述准备好的背膜放置在硅片正上方，其中，将背膜有粘性的一侧朝向硅片。此时，需要将手指或1-2cm厚的洁净物体垫在晶圆贴片环一侧防止背膜与硅片提前接触。
如图4和5所示，使用无尘布将美工刀片包裹一至两层，并使用美工刀片背面(非开刃侧)从一侧将背膜缓缓压下，使得背膜粘贴在硅片上，操作过程中不允许产生气泡，否则后续加工过程中会有碎片风险；如果产生气泡，可以将背膜缓缓剥离，并重新贴膜。如图6，使用美工刀将背膜和硅片从晶圆贴片环上剪下，如图7，沿硅片边缘缓缓切掉多余的背膜，使剩余背膜与硅片大小一致，然后多次修饰剪裁部分的边缘。最后，将硅片传送至ALD晶舟(boat)上，并控制温度、压力、气体流量、阀的开度等参数进行工艺过程。
优选的一种实施方式，所述ALD晶舟内的参数设定为：所述ALD晶舟的速度旋转在2rmp至10rmp之间；三甲基铝的流量在200sccm至400sccm之间；氧气流量设为8sLm；氮气流量在0.3sLm至1sLm之间；所述ALD晶舟的腔体压力设为0.05torr至0.1torr之间；压力阀角度在85-88°之间；薄膜沉积的反应温度在250-300℃之间。
所述薄膜沉积过程中薄膜沉积的厚度公式为：
T＝0.0801L+14.75 (1)
其中，T为薄膜厚度，L为循环次数。
优选的一种实施例，本方法还包括用于剪切物体的美工刀、洁净手套。所述步骤S2中的背膜的厚度在20μm至200μm之间，所述背膜的宽度为210mm至250mm之间，所述背膜可承受的温度为250℃至300℃之间。
以上实施例不局限于该实施例自身的技术方案，实施例之间可以相互结合成新的实施例。以上实施例仅用以说明本发明的技术方案而并非对其进行限制，凡未脱离本发明精神和范围的任何修改或者等同替换，其均应涵盖在本发明技术方案的范围内。

Claims (5)

1.一种硅片单侧膜淀积的方法，其特征在于，包括如下步骤：
S1在十级洁净室内设置室内温度22℃±1℃，设置室内湿度为45％±10％；
S2在洁净室内，人工将背膜粘贴在晶圆贴片环的一侧表面上且背膜粘贴后表面无褶皱；
S3将硅片放在操作台上且所述硅片的保护侧表面朝上，将所述背膜带有所述晶圆贴片环的一面与所述硅片的上表面进行面对面对准；
S4将所述背膜粘贴在硅片表面上，粘贴好的背膜与所述硅片之间无气泡；
S5将粘合在一起的背膜和硅片沿所述晶圆贴片环的内环剪下；
S6将步骤S5中的硅片送入ALD晶舟内进行薄膜沉积并设置所述ALD晶舟的工作参数；
S7根据步骤6中的设定，拟合薄膜厚度公式；
S8硅片加工完成，从ALD晶舟内取出并剥离所述背膜。
2.根据权利要求1所述的硅片单侧膜淀积的方法，其特征在于，所述ALD晶舟内的参数设定为：
所述ALD晶舟的速度旋转在2rmp至10rmp之间；
三甲基铝的流量在200sccm至400sccm之间；
氧气流量设为8sLm；
氮气流量在0.3sLm至1sLm之间；
所述ALD晶舟的腔体压力设为0.05torr至0.1torr之间；
压力阀角度在85-88°之间；
薄膜沉积的反应温度在250-300℃之间。
3.根据权利要求2所述的硅片单侧膜淀积的方法，其特征在于，所述薄膜沉积过程中薄膜沉积的厚度公式为：
T＝0.0801L+14.75 (1)
其中，T为薄膜厚度，L为循环次数。
4.根据权利要求1所述的硅片单侧膜淀积的方法，其特征在于，还包括用于剪切物体的美工刀、洁净手套。
5.根据权利要求1所述的硅片单侧膜淀积的方法，其特征在于，所述步骤S2中的背膜的厚度在20μm至200μm之间，所述背膜的宽度为210mm至250mm之间，所述背膜可承受的温度为250℃至300℃之间。
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