CN1619783A - 氧气氛下等离子氧化制备二氧化硅薄膜的方法 - Google Patents
氧气氛下等离子氧化制备二氧化硅薄膜的方法 Download PDFInfo
- Publication number
- CN1619783A CN1619783A CN 200410089089 CN200410089089A CN1619783A CN 1619783 A CN1619783 A CN 1619783A CN 200410089089 CN200410089089 CN 200410089089 CN 200410089089 A CN200410089089 A CN 200410089089A CN 1619783 A CN1619783 A CN 1619783A
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- Prior art keywords
- silicon dioxide
- dioxide film
- silicon
- plasma
- film
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 40
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000001301 oxygen Substances 0.000 title claims abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000003647 oxidation Effects 0.000 title claims abstract description 18
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910008062 Si-SiO2 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 229910006403 Si—SiO2 Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000002186 photoelectron spectrum Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200410089089XA CN1295759C (zh) | 2004-11-26 | 2004-11-26 | 氧气氛下等离子体氧化制备二氧化硅薄膜的方法 |
Applications Claiming Priority (1)
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CNB200410089089XA CN1295759C (zh) | 2004-11-26 | 2004-11-26 | 氧气氛下等离子体氧化制备二氧化硅薄膜的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1619783A true CN1619783A (zh) | 2005-05-25 |
CN1295759C CN1295759C (zh) | 2007-01-17 |
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CNB200410089089XA Expired - Fee Related CN1295759C (zh) | 2004-11-26 | 2004-11-26 | 氧气氛下等离子体氧化制备二氧化硅薄膜的方法 |
Country Status (1)
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CN (1) | CN1295759C (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100532625C (zh) * | 2008-05-08 | 2009-08-26 | 南京航空航天大学 | 在铝材表面获得高含量α-Al2O3涂层的制备方法 |
CN101233629B (zh) * | 2005-08-02 | 2010-06-02 | 松下电器产业株式会社 | 锂二次电池用负极及其制造方法 |
CN101405846B (zh) * | 2006-08-28 | 2010-09-29 | 国立大学法人名古屋大学 | 等离子体氧化处理方法及装置 |
CN101976647A (zh) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | 晶体硅太阳能电池片控制二氧化硅厚度的方法 |
CN101997057B (zh) * | 2009-08-18 | 2012-12-05 | 北儒精密股份有限公司 | 太阳能电池的制造方法与制造设备 |
CN112802734A (zh) * | 2020-12-30 | 2021-05-14 | 长春长光圆辰微电子技术有限公司 | 硅片单侧膜淀积的方法 |
CN113629161A (zh) * | 2021-08-04 | 2021-11-09 | 苏州拓升智能装备有限公司 | 间歇等离子体氧化方法和装置、太阳电池的制备方法 |
CN115196639A (zh) * | 2022-05-13 | 2022-10-18 | 常州工学院 | 一种二维超薄硅氧化合物及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW520453B (en) * | 1999-12-27 | 2003-02-11 | Seiko Epson Corp | A method to fabricate thin insulating films |
CN1254853C (zh) * | 2003-03-20 | 2006-05-03 | 统宝光电股份有限公司 | 氧化硅薄膜的制造方法 |
-
2004
- 2004-11-26 CN CNB200410089089XA patent/CN1295759C/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101233629B (zh) * | 2005-08-02 | 2010-06-02 | 松下电器产业株式会社 | 锂二次电池用负极及其制造方法 |
CN101405846B (zh) * | 2006-08-28 | 2010-09-29 | 国立大学法人名古屋大学 | 等离子体氧化处理方法及装置 |
CN100532625C (zh) * | 2008-05-08 | 2009-08-26 | 南京航空航天大学 | 在铝材表面获得高含量α-Al2O3涂层的制备方法 |
CN101997057B (zh) * | 2009-08-18 | 2012-12-05 | 北儒精密股份有限公司 | 太阳能电池的制造方法与制造设备 |
CN101976647A (zh) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | 晶体硅太阳能电池片控制二氧化硅厚度的方法 |
CN112802734A (zh) * | 2020-12-30 | 2021-05-14 | 长春长光圆辰微电子技术有限公司 | 硅片单侧膜淀积的方法 |
CN113629161A (zh) * | 2021-08-04 | 2021-11-09 | 苏州拓升智能装备有限公司 | 间歇等离子体氧化方法和装置、太阳电池的制备方法 |
CN113629161B (zh) * | 2021-08-04 | 2024-06-07 | 苏州拓升智能装备有限公司 | 间歇等离子体氧化方法和装置、太阳电池的制备方法 |
CN115196639A (zh) * | 2022-05-13 | 2022-10-18 | 常州工学院 | 一种二维超薄硅氧化合物及其制备方法 |
CN115196639B (zh) * | 2022-05-13 | 2023-09-22 | 常州工学院 | 一种二维超薄硅氧化合物及其制备方法 |
Also Published As
Publication number | Publication date |
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CN1295759C (zh) | 2007-01-17 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Ningbo SunEarth Solar Power Co., Ltd. Assignor: Zhejiang University Contract fulfillment period: 2008.7.14 to 2013.7.13 Contract record no.: 2008330000129 Denomination of invention: Method of preparing silicon dioxide film by plasma oxidation under oxygen atmosphore Granted publication date: 20070117 License type: Exclusive license Record date: 2008.7.30 |
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LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.7.14 TO 2013.7.13 Name of requester: NINGBO SHENGRI SOLAR ENERGY CO., LTD. Effective date: 20080730 |
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