CN1295759C - 氧气氛下等离子体氧化制备二氧化硅薄膜的方法 - Google Patents
氧气氛下等离子体氧化制备二氧化硅薄膜的方法 Download PDFInfo
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- CN1295759C CN1295759C CNB200410089089XA CN200410089089A CN1295759C CN 1295759 C CN1295759 C CN 1295759C CN B200410089089X A CNB200410089089X A CN B200410089089XA CN 200410089089 A CN200410089089 A CN 200410089089A CN 1295759 C CN1295759 C CN 1295759C
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- silicon dioxide
- dioxide film
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- oxygen
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CNB200410089089XA CN1295759C (zh) | 2004-11-26 | 2004-11-26 | 氧气氛下等离子体氧化制备二氧化硅薄膜的方法 |
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CNB200410089089XA CN1295759C (zh) | 2004-11-26 | 2004-11-26 | 氧气氛下等离子体氧化制备二氧化硅薄膜的方法 |
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Publication Number | Publication Date |
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CN1619783A CN1619783A (zh) | 2005-05-25 |
CN1295759C true CN1295759C (zh) | 2007-01-17 |
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CNB200410089089XA Expired - Fee Related CN1295759C (zh) | 2004-11-26 | 2004-11-26 | 氧气氛下等离子体氧化制备二氧化硅薄膜的方法 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8080334B2 (en) * | 2005-08-02 | 2011-12-20 | Panasonic Corporation | Lithium secondary battery |
CN101405846B (zh) * | 2006-08-28 | 2010-09-29 | 国立大学法人名古屋大学 | 等离子体氧化处理方法及装置 |
CN100532625C (zh) * | 2008-05-08 | 2009-08-26 | 南京航空航天大学 | 在铝材表面获得高含量α-Al2O3涂层的制备方法 |
CN101997057B (zh) * | 2009-08-18 | 2012-12-05 | 北儒精密股份有限公司 | 太阳能电池的制造方法与制造设备 |
CN101976647B (zh) * | 2010-07-28 | 2012-05-30 | 常州天合光能有限公司 | 晶体硅太阳能电池片控制二氧化硅厚度的方法 |
CN112802734A (zh) * | 2020-12-30 | 2021-05-14 | 长春长光圆辰微电子技术有限公司 | 硅片单侧膜淀积的方法 |
CN115196639B (zh) * | 2022-05-13 | 2023-09-22 | 常州工学院 | 一种二维超薄硅氧化合物及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1351760A (zh) * | 1999-12-27 | 2002-05-29 | 精工爱普生株式会社 | 制造绝缘薄膜的方法 |
CN1532897A (zh) * | 2003-03-20 | 2004-09-29 | 统宝光电股份有限公司 | 氧化硅薄膜的制造方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1351760A (zh) * | 1999-12-27 | 2002-05-29 | 精工爱普生株式会社 | 制造绝缘薄膜的方法 |
CN1532897A (zh) * | 2003-03-20 | 2004-09-29 | 统宝光电股份有限公司 | 氧化硅薄膜的制造方法 |
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CN1619783A (zh) | 2005-05-25 |
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GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Ningbo SunEarth Solar Power Co., Ltd. Assignor: Zhejiang University Contract fulfillment period: 2008.7.14 to 2013.7.13 Contract record no.: 2008330000129 Denomination of invention: Method of preparing silicon dioxide film by plasma oxidation under oxygen atmosphore Granted publication date: 20070117 License type: Exclusive license Record date: 2008.7.30 |
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Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.7.14 TO 2013.7.13 Name of requester: NINGBO SHENGRI SOLAR ENERGY CO., LTD. Effective date: 20080730 |
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Granted publication date: 20070117 Termination date: 20171126 |