PT1601813E - Método para depositar silicone - Google Patents
Método para depositar silicone Download PDFInfo
- Publication number
- PT1601813E PT1601813E PT04703337T PT04703337T PT1601813E PT 1601813 E PT1601813 E PT 1601813E PT 04703337 T PT04703337 T PT 04703337T PT 04703337 T PT04703337 T PT 04703337T PT 1601813 E PT1601813 E PT 1601813E
- Authority
- PT
- Portugal
- Prior art keywords
- plasma
- chamber
- hydrogen
- sccm
- gas
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 40
- 229920001296 polysiloxane Polymers 0.000 title claims description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 53
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 53
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000007789 gas Substances 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 39
- 230000008021 deposition Effects 0.000 claims description 37
- 229910000077 silane Inorganic materials 0.000 claims description 36
- 230000005284 excitation Effects 0.000 claims description 6
- 239000002250 absorbent Substances 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 230000000977 initiatory effect Effects 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 14
- 230000012010 growth Effects 0.000 description 11
- 150000002431 hydrogen Chemical class 0.000 description 8
- 239000004447 silicone coating Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000010924 continuous production Methods 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004941 influx Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036515 potency Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10308381A DE10308381B4 (de) | 2003-02-27 | 2003-02-27 | Verfahren zur Abscheidung von Silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PT1601813E true PT1601813E (pt) | 2008-11-13 |
Family
ID=32863924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PT04703337T PT1601813E (pt) | 2003-02-27 | 2004-01-20 | Método para depositar silicone |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US7981776B2 (enExample) |
| EP (1) | EP1601813B1 (enExample) |
| JP (1) | JP4733627B2 (enExample) |
| KR (1) | KR101127047B1 (enExample) |
| CN (1) | CN1754007A (enExample) |
| AT (1) | ATE403763T1 (enExample) |
| AU (1) | AU2004215243B2 (enExample) |
| CA (1) | CA2517598C (enExample) |
| CY (1) | CY1108484T1 (enExample) |
| DE (2) | DE10308381B4 (enExample) |
| ES (1) | ES2311792T3 (enExample) |
| PT (1) | PT1601813E (enExample) |
| RU (1) | RU2005129984A (enExample) |
| SI (1) | SI1601813T1 (enExample) |
| WO (1) | WO2004076713A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216624A (ja) * | 2005-02-01 | 2006-08-17 | Mitsubishi Heavy Ind Ltd | 太陽電池及び太陽電池の製造方法 |
| US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| TWI350006B (en) * | 2007-10-05 | 2011-10-01 | Ind Tech Res Inst | Plasma enhanced thin film deposition method |
| JP2011503848A (ja) | 2007-11-02 | 2011-01-27 | アプライド マテリアルズ インコーポレイテッド | 堆積プロセス間のプラズマ処置 |
| JP5005588B2 (ja) | 2008-03-14 | 2012-08-22 | 東洋自動機株式会社 | 袋移送及び傾き修正装置 |
| RU2367600C1 (ru) * | 2008-04-16 | 2009-09-20 | Борис Георгиевич Грибов | Способ получения кремния высокой чистоты |
| DE102008063737A1 (de) * | 2008-12-18 | 2010-06-24 | Forschungszentrum Jülich GmbH | Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat |
| TW201120942A (en) * | 2009-12-08 | 2011-06-16 | Ind Tech Res Inst | Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition |
| CN102108494B (zh) * | 2009-12-23 | 2013-01-16 | 财团法人工业技术研究院 | 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置 |
| CN102031503B (zh) * | 2010-09-29 | 2012-12-05 | 理想能源设备(上海)有限公司 | 硅薄膜的沉积方法 |
| US8642376B2 (en) * | 2011-05-16 | 2014-02-04 | Applied Materials, Inc. | Methods for depositing a material atop a substrate |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| DE102014007766B4 (de) * | 2014-05-21 | 2025-10-16 | Christian Bauch | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
| CN114242833A (zh) * | 2021-11-18 | 2022-03-25 | 国家电投集团科学技术研究院有限公司 | 异质结太阳电池的硅片处理方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5334423A (en) * | 1993-01-28 | 1994-08-02 | United Solar Systems Corp. | Microwave energized process for the preparation of high quality semiconductor material |
| JPH09232235A (ja) * | 1995-02-24 | 1997-09-05 | Mitsui Toatsu Chem Inc | 光電変換素子 |
| JPH1081973A (ja) | 1996-03-18 | 1998-03-31 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマｃｖｄ装置 |
| US5824940A (en) | 1997-01-27 | 1998-10-20 | Alfred University | Ceramic bullet-proof fabric |
| JPH11233801A (ja) * | 1998-02-17 | 1999-08-27 | Canon Inc | 微結晶シリコン膜の形成方法、および光起電力素子 |
| JP4335389B2 (ja) * | 1999-11-24 | 2009-09-30 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| JP3857024B2 (ja) * | 2000-07-17 | 2006-12-13 | 株式会社神戸製鋼所 | 微結晶シリコン薄膜の形成方法 |
| JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| JP4397391B2 (ja) * | 2006-10-30 | 2010-01-13 | 信越フィルム株式会社 | ガスバリア性プラスチックおよびプラスチックフィルムの製造方法 |
-
2003
- 2003-02-27 DE DE10308381A patent/DE10308381B4/de not_active Expired - Lifetime
-
2004
- 2004-01-20 DE DE502004007776T patent/DE502004007776D1/de not_active Expired - Lifetime
- 2004-01-20 ES ES04703337T patent/ES2311792T3/es not_active Expired - Lifetime
- 2004-01-20 SI SI200430905T patent/SI1601813T1/sl unknown
- 2004-01-20 CA CA2517598A patent/CA2517598C/en not_active Expired - Fee Related
- 2004-01-20 PT PT04703337T patent/PT1601813E/pt unknown
- 2004-01-20 US US10/547,118 patent/US7981776B2/en not_active Expired - Fee Related
- 2004-01-20 EP EP04703337A patent/EP1601813B1/de not_active Expired - Lifetime
- 2004-01-20 AT AT04703337T patent/ATE403763T1/de active
- 2004-01-20 WO PCT/DE2004/000066 patent/WO2004076713A1/de not_active Ceased
- 2004-01-20 RU RU2005129984/02A patent/RU2005129984A/ru not_active Application Discontinuation
- 2004-01-20 JP JP2006501464A patent/JP4733627B2/ja not_active Expired - Fee Related
- 2004-01-20 AU AU2004215243A patent/AU2004215243B2/en not_active Ceased
- 2004-01-20 CN CNA2004800052636A patent/CN1754007A/zh active Pending
- 2004-01-20 KR KR1020057015528A patent/KR101127047B1/ko not_active Expired - Fee Related
-
2008
- 2008-11-06 CY CY20081101261T patent/CY1108484T1/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP1601813A1 (de) | 2005-12-07 |
| ES2311792T3 (es) | 2009-02-16 |
| CA2517598C (en) | 2012-05-15 |
| JP4733627B2 (ja) | 2011-07-27 |
| SI1601813T1 (sl) | 2009-02-28 |
| DE10308381B4 (de) | 2012-08-16 |
| WO2004076713A1 (de) | 2004-09-10 |
| AU2004215243B2 (en) | 2009-12-03 |
| DE10308381A1 (de) | 2004-09-16 |
| KR20050114218A (ko) | 2005-12-05 |
| US20060240649A1 (en) | 2006-10-26 |
| EP1601813B1 (de) | 2008-08-06 |
| CY1108484T1 (el) | 2014-04-09 |
| CA2517598A1 (en) | 2004-09-10 |
| AU2004215243A1 (en) | 2004-09-10 |
| DE502004007776D1 (de) | 2008-09-18 |
| RU2005129984A (ru) | 2006-05-10 |
| CN1754007A (zh) | 2006-03-29 |
| ATE403763T1 (de) | 2008-08-15 |
| US7981776B2 (en) | 2011-07-19 |
| KR101127047B1 (ko) | 2012-04-23 |
| JP2006519482A (ja) | 2006-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| PT1601813E (pt) | Método para depositar silicone | |
| JP2533639B2 (ja) | Ｐ形炭素添加非晶質シリコンの生成方法 | |
| CN101246932A (zh) | 氢氩高稀释方法生产氢化硅薄膜 | |
| Kim et al. | Growth of microcrystal silicon by remote plasma chemical vapor deposition | |
| US7902049B2 (en) | Method for depositing high-quality microcrystalline semiconductor materials | |
| CN101550544B (zh) | 一种改善高速沉积微晶硅材料中非晶孵化层的方法 | |
| JPH07130661A (ja) | 非晶質酸化シリコン薄膜の生成方法 | |
| US20120167963A1 (en) | Photovoltaic Device Structure with Primer Layer | |
| US8273641B2 (en) | Plasma deposition of amorphous semiconductors at microwave frequencies | |
| Kenne et al. | High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane | |
| EP3125305A1 (en) | Method for manufacturing germanium based thin film solar cells with improved light induced degradation properties | |
| JPH04373122A (ja) | 薄膜半導体の製造法 | |
| JP2723548B2 (ja) | 炭素含有シリコン微結晶薄膜の形成法 | |
| Soppe et al. | High rate growth of micro-crystalline silicon by microwave-PECVD | |
| Podraza et al. | Development of deposition phase diagrams for thin film Si: H and Si1-xGex: H using real time spectroscopic ellipsometry | |
| van Swaaij et al. | Performance dependence on grading width of a-SiGe: H component solar cells | |
| Smith et al. | The efficiency of gas usage in glow-discharge deposition of hydrogenated amorphous silicon | |
| CN120129333A (zh) | 一种硅片硼掺杂层的制备方法、硅片及装置系统 | |
| Lin et al. | Low-temperature growth of poly-crystalline silicon films using SiCl/sub 4/and H/sub 2/mixture | |
| Xi et al. | Identification and Reduction of PI Interface Instability and Establishment of 8.5% Stabilized Efficiency for Single Junction a-Si Solar Cells | |
| Yang et al. | Reduced adverse effects on Si thin film solar cells caused by growth chamber air exposure | |
| JPH05275354A (ja) | シリコン薄膜の製造法 | |
| Kim et al. | Amorphous silicon double stacked solar cell using low band gap A-Si bottom cell | |
| Ganguly et al. | Control of defect density in a-Si: H by surface processes | |
| Ray et al. | Low bandgap a-Si: H film with better stability prepared by RF PECVD method using helium dilution |