RU2005129984A - Способ осаждения кремния - Google Patents
Способ осаждения кремния Download PDFInfo
- Publication number
- RU2005129984A RU2005129984A RU2005129984/02A RU2005129984A RU2005129984A RU 2005129984 A RU2005129984 A RU 2005129984A RU 2005129984/02 A RU2005129984/02 A RU 2005129984/02A RU 2005129984 A RU2005129984 A RU 2005129984A RU 2005129984 A RU2005129984 A RU 2005129984A
- Authority
- RU
- Russia
- Prior art keywords
- chamber
- plasma
- containing gas
- reactive silicon
- initiation
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract 14
- 229910052710 silicon Inorganic materials 0.000 title claims abstract 14
- 239000010703 silicon Substances 0.000 title claims abstract 14
- 238000000151 deposition Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 claims abstract 17
- 238000000034 method Methods 0.000 claims abstract 14
- 230000000977 initiatory effect Effects 0.000 claims abstract 8
- 239000001257 hydrogen Substances 0.000 claims abstract 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000000203 mixture Substances 0.000 claims abstract 5
- 239000000758 substrate Substances 0.000 claims abstract 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract 2
- 230000008021 deposition Effects 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10308381.2 | 2003-02-27 | ||
| DE10308381A DE10308381B4 (de) | 2003-02-27 | 2003-02-27 | Verfahren zur Abscheidung von Silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2005129984A true RU2005129984A (ru) | 2006-05-10 |
Family
ID=32863924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2005129984/02A RU2005129984A (ru) | 2003-02-27 | 2004-01-20 | Способ осаждения кремния |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US7981776B2 (enExample) |
| EP (1) | EP1601813B1 (enExample) |
| JP (1) | JP4733627B2 (enExample) |
| KR (1) | KR101127047B1 (enExample) |
| CN (1) | CN1754007A (enExample) |
| AT (1) | ATE403763T1 (enExample) |
| AU (1) | AU2004215243B2 (enExample) |
| CA (1) | CA2517598C (enExample) |
| CY (1) | CY1108484T1 (enExample) |
| DE (2) | DE10308381B4 (enExample) |
| ES (1) | ES2311792T3 (enExample) |
| PT (1) | PT1601813E (enExample) |
| RU (1) | RU2005129984A (enExample) |
| SI (1) | SI1601813T1 (enExample) |
| WO (1) | WO2004076713A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2367600C1 (ru) * | 2008-04-16 | 2009-09-20 | Борис Георгиевич Грибов | Способ получения кремния высокой чистоты |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216624A (ja) * | 2005-02-01 | 2006-08-17 | Mitsubishi Heavy Ind Ltd | 太陽電池及び太陽電池の製造方法 |
| US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| TWI350006B (en) * | 2007-10-05 | 2011-10-01 | Ind Tech Res Inst | Plasma enhanced thin film deposition method |
| JP2011503848A (ja) | 2007-11-02 | 2011-01-27 | アプライド マテリアルズ インコーポレイテッド | 堆積プロセス間のプラズマ処置 |
| JP5005588B2 (ja) | 2008-03-14 | 2012-08-22 | 東洋自動機株式会社 | 袋移送及び傾き修正装置 |
| DE102008063737A1 (de) * | 2008-12-18 | 2010-06-24 | Forschungszentrum Jülich GmbH | Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat |
| TW201120942A (en) * | 2009-12-08 | 2011-06-16 | Ind Tech Res Inst | Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition |
| CN102108494B (zh) * | 2009-12-23 | 2013-01-16 | 财团法人工业技术研究院 | 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置 |
| CN102031503B (zh) * | 2010-09-29 | 2012-12-05 | 理想能源设备(上海)有限公司 | 硅薄膜的沉积方法 |
| US8642376B2 (en) * | 2011-05-16 | 2014-02-04 | Applied Materials, Inc. | Methods for depositing a material atop a substrate |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| DE102014007766B4 (de) * | 2014-05-21 | 2025-10-16 | Christian Bauch | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
| CN114242833A (zh) * | 2021-11-18 | 2022-03-25 | 国家电投集团科学技术研究院有限公司 | 异质结太阳电池的硅片处理方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5334423A (en) * | 1993-01-28 | 1994-08-02 | United Solar Systems Corp. | Microwave energized process for the preparation of high quality semiconductor material |
| JPH09232235A (ja) * | 1995-02-24 | 1997-09-05 | Mitsui Toatsu Chem Inc | 光電変換素子 |
| JPH1081973A (ja) | 1996-03-18 | 1998-03-31 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマｃｖｄ装置 |
| US5824940A (en) | 1997-01-27 | 1998-10-20 | Alfred University | Ceramic bullet-proof fabric |
| JPH11233801A (ja) * | 1998-02-17 | 1999-08-27 | Canon Inc | 微結晶シリコン膜の形成方法、および光起電力素子 |
| JP4335389B2 (ja) * | 1999-11-24 | 2009-09-30 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| JP3857024B2 (ja) * | 2000-07-17 | 2006-12-13 | 株式会社神戸製鋼所 | 微結晶シリコン薄膜の形成方法 |
| JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| JP4397391B2 (ja) * | 2006-10-30 | 2010-01-13 | 信越フィルム株式会社 | ガスバリア性プラスチックおよびプラスチックフィルムの製造方法 |
-
2003
- 2003-02-27 DE DE10308381A patent/DE10308381B4/de not_active Expired - Lifetime
-
2004
- 2004-01-20 DE DE502004007776T patent/DE502004007776D1/de not_active Expired - Lifetime
- 2004-01-20 ES ES04703337T patent/ES2311792T3/es not_active Expired - Lifetime
- 2004-01-20 SI SI200430905T patent/SI1601813T1/sl unknown
- 2004-01-20 CA CA2517598A patent/CA2517598C/en not_active Expired - Fee Related
- 2004-01-20 PT PT04703337T patent/PT1601813E/pt unknown
- 2004-01-20 US US10/547,118 patent/US7981776B2/en not_active Expired - Fee Related
- 2004-01-20 EP EP04703337A patent/EP1601813B1/de not_active Expired - Lifetime
- 2004-01-20 AT AT04703337T patent/ATE403763T1/de active
- 2004-01-20 WO PCT/DE2004/000066 patent/WO2004076713A1/de not_active Ceased
- 2004-01-20 RU RU2005129984/02A patent/RU2005129984A/ru not_active Application Discontinuation
- 2004-01-20 JP JP2006501464A patent/JP4733627B2/ja not_active Expired - Fee Related
- 2004-01-20 AU AU2004215243A patent/AU2004215243B2/en not_active Ceased
- 2004-01-20 CN CNA2004800052636A patent/CN1754007A/zh active Pending
- 2004-01-20 KR KR1020057015528A patent/KR101127047B1/ko not_active Expired - Fee Related
-
2008
- 2008-11-06 CY CY20081101261T patent/CY1108484T1/el unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2367600C1 (ru) * | 2008-04-16 | 2009-09-20 | Борис Георгиевич Грибов | Способ получения кремния высокой чистоты |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1601813A1 (de) | 2005-12-07 |
| ES2311792T3 (es) | 2009-02-16 |
| CA2517598C (en) | 2012-05-15 |
| JP4733627B2 (ja) | 2011-07-27 |
| SI1601813T1 (sl) | 2009-02-28 |
| DE10308381B4 (de) | 2012-08-16 |
| WO2004076713A1 (de) | 2004-09-10 |
| AU2004215243B2 (en) | 2009-12-03 |
| DE10308381A1 (de) | 2004-09-16 |
| KR20050114218A (ko) | 2005-12-05 |
| US20060240649A1 (en) | 2006-10-26 |
| EP1601813B1 (de) | 2008-08-06 |
| CY1108484T1 (el) | 2014-04-09 |
| CA2517598A1 (en) | 2004-09-10 |
| AU2004215243A1 (en) | 2004-09-10 |
| DE502004007776D1 (de) | 2008-09-18 |
| PT1601813E (pt) | 2008-11-13 |
| CN1754007A (zh) | 2006-03-29 |
| ATE403763T1 (de) | 2008-08-15 |
| US7981776B2 (en) | 2011-07-19 |
| KR101127047B1 (ko) | 2012-04-23 |
| JP2006519482A (ja) | 2006-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA93 | Acknowledgement of application withdrawn (no request for examination) |
Effective date: 20070122 |