JP2009071226A - 層間絶縁膜形成方法、層間絶縁膜、半導体デバイス、および半導体製造装置 - Google Patents
層間絶縁膜形成方法、層間絶縁膜、半導体デバイス、および半導体製造装置 Download PDFInfo
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- 239000011229 interlayer Substances 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 53
- 239000000178 monomer Substances 0.000 claims abstract description 74
- 239000011261 inert gas Substances 0.000 claims abstract description 31
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 29
- 239000002994 raw material Substances 0.000 claims description 44
- 239000012159 carrier gas Substances 0.000 claims description 23
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims description 21
- 238000010926 purge Methods 0.000 claims description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 150000001722 carbon compounds Chemical class 0.000 claims description 12
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 30
- 239000007857 degradation product Substances 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 description 23
- 239000000047 product Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 9
- 238000001179 sorption measurement Methods 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 239000006200 vaporizer Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Abstract
【解決手段】成膜終了時にモノマー分解生成物が膜表面に付着することを防ぐために気体分子のチャンバー内滞在時間を短くする。また不活性ガスのプラズマにより表面を処理することで表面に付着したモノマー分解生成物を除去する。
【選択図】なし
Description
およびを用いることにより、配線の長期信頼性の劣化を抑制できるため、高速、低消費電力なLSIの形成が可能となる。
次に本発明を実施するための最良の形態について図を用いて説明する。
次に第1の実施の形態を用いた実施例1を図を用いて説明する。層間絶縁膜の成膜には用いる原料モノマーには以下に示すものを使用することができる。SiO3員環構造のモノマーでは(式2)〜(式4)に示すモノマーを使用することができる。
ここでτは平均滞在時間(秒)、pはリアクタ圧力(Torr)、Vはリアクタ体積(L)、Sは排気速度(L/sec)である。また排気速度Sは直接藻止めることが出来ないが排気量QはpとSの積で表すことが出来るので(式12)は以下のように変形できる。
式14からリアクタをパージする際、リアクタ圧力が一定であるならば排気量Qはパージガス導入量と等しくなる。そのたパージガス導入量を多くすれば平均滞在時間τを短くすることが出来、分解生成物15が基板に吸着する前に排出可能である。不活性ガスにはヘリウムと窒素の混合ガスを用いた。図3は層間絶縁膜の比誘電率の経時変化を示した図である。この図から平均滞在時間τがなくなるようにパージを行った水準は比誘電率の増加が激しいことが判明した。
次に本発明を実施するための第2の実施の形態を図を用いて説明する。
次に本発明を実施するための第3の実施の形態を図を用いて説明する。
2・・・モノマーリザーバー
3・・・圧送ガス
4・・・液体マスフロー
5・・・気化器
6・・・キャリアガス
7・・・マスフロー
8・・・リアクタ
9・・・RFユニット
10・・・排気ポンプ
11・・・不活性ガス
12・・・上部電極
13・・・下部電極
14・・・基板
15・・・分解生成物
Claims (19)
- 不飽和炭化水素を持つモノマーを使ったプラズマCVD法による層間絶縁膜の成膜方法において、
成膜の高周波電源OFFと同時に不活性ガスでパージを行うことを特徴とする層間絶縁膜形成方法。 - 不飽和炭化水素を持つモノマーを使ったプラズマCVD法による層間絶縁膜の成膜方法において、
成膜後不活性ガスのプラズマにより表面処理を行った後不活性ガスでパージを行うことを特徴とする層間絶縁膜形成方法。 - 不飽和炭化水素を持つモノマーを使ったプラズマCVD法による層間絶縁膜の成膜方法において、
成膜時の高周波電源をOFFする前に原料の供給を止め、キャリアガスのみでプラズマ処理を行った後高周波電源をOFFし、不活性ガスでパージを行う特徴とする層間絶縁膜形成方法。 - 不飽和炭化水素を持つモノマーを使ったプラズマCVD法による層間絶縁膜の成膜方法において、
成膜時に原料モノマーとキャリアガスのみ、あるいは原料モノマーとキャリアガスと不活性ガスのみがリアクタ内に供給されることを特徴とする請求項1乃至3のいずれか一項に記載の層間絶縁膜形成方法。 - 前記不活性ガスがヘリウム、窒素、アルゴンの1種類以上からなることを特徴とする請求項1乃至4のいずれか一項に記載の層間絶縁膜形成方法。
- 前記不活性ガスによるパージの際の流量が、成膜チャンバー内における滞在時間が0.8秒以下となるようにすることを特徴とする請求項1乃至5のいずれか一項に記載の層間絶縁膜形成方法。
- 前記不飽和炭化水素を持つモノマーがSiOの3員環構造、4員環構造あるいは直鎖構造を持つことを特徴とする請求項1乃至6のいずれか一項に記載の層間絶縁膜形成方法。
- 前記SiOの3員環構造を持つ不飽和炭化水素を持つモノマーが、下記式1に示す構造であり、R1は不飽和炭素化合物、R2飽和炭素化合物であり、R1はビニル基、またはアリル基、R2はメチル基、エチル基、プロピル基、イソプロピル基、ブチル基のいずれかであることを特徴とする請求項7に記載の層間絶縁膜形成方法。
- 前記SiOの3員環構造を持つ不飽和炭化水素を持つモノマーが、下記式2、3、4に示す構造のうち少なくともいずれかの1つであることを特徴とする請求項7に記載の層間絶縁膜形成方法。
- 前記SiOの4員環構造を持つ不飽和炭化水素を持つモノマーが、下記式5に示す構造であり、R3は不飽和炭素化合物、R4飽和炭素化合物であり、R1はビニル基またはアリル基、R2はメチル基、エチル基、プロピル基、イソプロピル基、ブチル基のいずれかであることを特徴とする請求項7に記載の層間絶縁膜形成方法。
- 前記SiOの4員環構造を持つ不飽和炭化水素を持つモノマーが下記式6、7、8、9に示す構造のうち少なくともいずれかの1つであることを特徴とする請求項7に記載の層間絶縁膜形成方法。
- 前記SiOの直鎖構造を持つ不飽和炭化水素を持つモノマーが、下記式10に示す構造であり、R5は不飽和炭素化合物、R6、R7、R8は飽和炭素化合物であり、R5はビニル基またはアリル基、R6、R7、R8はメチル基、エチル基、プロピル基、イソプロピル基、ブチル基のいずれかであることを特徴とする請求項7に記載の層間絶縁膜形成方法。
- 前記SiOの直鎖構造を持つ不飽和炭化水素を持つモノマーが下記式11に示す構造であることを特徴とする請求項7に記載の層間絶縁膜形成方法。
- 前記不活性ガスが原料供給ラインとは異なった経路で供給されることを特徴とする請求項1乃至4のいずれか一項に記載の層間絶縁膜形成方法。
- 前記キャリアガスが、ヘリウム、窒素、アルゴンのいずれか1種類以上含むことを特徴とする請求項3記載の層間絶縁膜形成方法。
- 請求項1乃至15のいずれか一項に記載の層間絶縁膜形成方法であって、原料となる不飽和炭化水素を持つモノマーが1種であるプラズマ重合反応、もしくは2種であるプラズマ重合反応を用いることを特徴とする層間絶縁膜形成方法。
- 前記請求項1乃至16のいずれか一項に記載の層間絶縁膜形成方法によって形成された層間絶縁膜であって、TDS分析より120℃で放出される有機物がないことを特徴とする層間絶縁膜。
- 前記請求項1乃至16のいずれか一項に記載の層間絶縁膜形成方法によって形成された層間絶縁膜を具備することを特徴とする半導体デバイス。
- 前記請求項1乃至16のいずれか一項に記載の層間絶縁膜形成方法によって層間絶縁膜を成膜する半導体製造装置。
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