JP2005354041A5 - - Google Patents

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Publication number
JP2005354041A5
JP2005354041A5 JP2005130914A JP2005130914A JP2005354041A5 JP 2005354041 A5 JP2005354041 A5 JP 2005354041A5 JP 2005130914 A JP2005130914 A JP 2005130914A JP 2005130914 A JP2005130914 A JP 2005130914A JP 2005354041 A5 JP2005354041 A5 JP 2005354041A5
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JP
Japan
Prior art keywords
substrate
insulating film
processing method
substrate processing
releasing
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Application number
JP2005130914A
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English (en)
Japanese (ja)
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JP2005354041A (ja
JP4555143B2 (ja
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Priority to JP2005130914A priority Critical patent/JP4555143B2/ja
Priority claimed from JP2005130914A external-priority patent/JP4555143B2/ja
Publication of JP2005354041A publication Critical patent/JP2005354041A/ja
Publication of JP2005354041A5 publication Critical patent/JP2005354041A5/ja
Application granted granted Critical
Publication of JP4555143B2 publication Critical patent/JP4555143B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005130914A 2004-05-11 2005-04-28 基板の処理方法 Expired - Fee Related JP4555143B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005130914A JP4555143B2 (ja) 2004-05-11 2005-04-28 基板の処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004141022 2004-05-11
JP2005130914A JP4555143B2 (ja) 2004-05-11 2005-04-28 基板の処理方法

Publications (3)

Publication Number Publication Date
JP2005354041A JP2005354041A (ja) 2005-12-22
JP2005354041A5 true JP2005354041A5 (enExample) 2008-04-10
JP4555143B2 JP4555143B2 (ja) 2010-09-29

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ID=35320470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005130914A Expired - Fee Related JP4555143B2 (ja) 2004-05-11 2005-04-28 基板の処理方法

Country Status (4)

Country Link
JP (1) JP4555143B2 (enExample)
KR (1) KR100887439B1 (enExample)
CN (1) CN100485884C (enExample)
WO (1) WO2005109483A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101256035B1 (ko) * 2005-06-20 2013-04-18 고에키자이단호진 고쿠사이카가쿠 신고우자이단 층간 절연막 및 배선 구조와 그것들의 제조 방법
JP5119606B2 (ja) * 2006-03-31 2013-01-16 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP5194393B2 (ja) * 2006-06-23 2013-05-08 東京エレクトロン株式会社 半導体装置の製造方法
JP2008270706A (ja) * 2007-03-26 2008-11-06 Tokyo Electron Ltd 窒化珪素膜および不揮発性半導体メモリ装置
CN101652843B (zh) * 2007-03-26 2011-07-20 东京毅力科创株式会社 氮化硅膜的形成方法、非易失性半导体存储装置的制造方法、非易失性半导体存储装置和等离子体处理装置
US8021975B2 (en) * 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
US8197913B2 (en) * 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
TW201044462A (en) 2009-01-22 2010-12-16 Tokyo Electron Ltd A method for manufacturing semiconductor devices
JP5600885B2 (ja) * 2009-03-19 2014-10-08 凸版印刷株式会社 有機ｅｌ用乾燥装置
JP5304759B2 (ja) * 2010-09-15 2013-10-02 東京エレクトロン株式会社 成膜方法及び半導体装置
JP5700513B2 (ja) * 2010-10-08 2015-04-15 国立大学法人東北大学 半導体装置の製造方法および半導体装置
JP2012164922A (ja) * 2011-02-09 2012-08-30 Yuutekku:Kk 圧電体の製造方法、圧電体及び電子装置
JP5364765B2 (ja) * 2011-09-07 2013-12-11 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP6559087B2 (ja) * 2016-03-31 2019-08-14 東京エレクトロン株式会社 基板処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409984B2 (ja) * 1996-11-14 2003-05-26 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP3469761B2 (ja) * 1997-10-30 2003-11-25 東京エレクトロン株式会社 半導体デバイスの製造方法
JP3429171B2 (ja) * 1997-11-20 2003-07-22 東京エレクトロン株式会社 プラズマ処理方法及び半導体デバイスの製造方法
JP4355039B2 (ja) * 1998-05-07 2009-10-28 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP3921917B2 (ja) * 2000-03-31 2007-05-30 セイコーエプソン株式会社 微細構造体の製造方法
KR100746120B1 (ko) * 2001-01-22 2007-08-13 동경 엘렉트론 주식회사 반도체 디바이스의 제조 방법, 플라즈마 처리 방법, 및게이트 절연막 형성 방법
KR20020093577A (ko) * 2001-06-08 2002-12-16 수미도모 프리시젼 프로덕츠 캄파니 리미티드 기판 처리 장치
JP4413556B2 (ja) * 2003-08-15 2010-02-10 東京エレクトロン株式会社 成膜方法、半導体装置の製造方法
JP4194521B2 (ja) * 2004-04-07 2008-12-10 東京エレクトロン株式会社 半導体装置の製造方法

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