JP2006332619A5 - - Google Patents
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- Publication number
- JP2006332619A5 JP2006332619A5 JP2006118791A JP2006118791A JP2006332619A5 JP 2006332619 A5 JP2006332619 A5 JP 2006332619A5 JP 2006118791 A JP2006118791 A JP 2006118791A JP 2006118791 A JP2006118791 A JP 2006118791A JP 2006332619 A5 JP2006332619 A5 JP 2006332619A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- silicon oxide
- protective layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims 24
- 239000010410 layer Substances 0.000 claims 20
- 239000011241 protective layer Substances 0.000 claims 18
- 229910052757 nitrogen Inorganic materials 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 10
- 229910044991 metal oxide Inorganic materials 0.000 claims 8
- 150000004706 metal oxides Chemical class 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000009832 plasma treatment Methods 0.000 claims 4
- 238000007789 sealing Methods 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006118791A JP5052033B2 (ja) | 2005-04-28 | 2006-04-24 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005133672 | 2005-04-28 | ||
| JP2005133672 | 2005-04-28 | ||
| JP2006118791A JP5052033B2 (ja) | 2005-04-28 | 2006-04-24 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006332619A JP2006332619A (ja) | 2006-12-07 |
| JP2006332619A5 true JP2006332619A5 (enExample) | 2009-02-26 |
| JP5052033B2 JP5052033B2 (ja) | 2012-10-17 |
Family
ID=37553931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006118791A Expired - Fee Related JP5052033B2 (ja) | 2005-04-28 | 2006-04-24 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5052033B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101430587B1 (ko) * | 2006-09-20 | 2014-08-14 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들 |
| US8334537B2 (en) * | 2007-07-06 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP5521286B2 (ja) * | 2008-05-28 | 2014-06-11 | カシオ計算機株式会社 | 薄膜素子の製造方法 |
| JP6077382B2 (ja) * | 2012-05-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| KR102554691B1 (ko) * | 2016-10-07 | 2023-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판 |
| US11081712B2 (en) | 2018-10-26 | 2021-08-03 | Saudi Arabian Oil Company | Method and system to modify the performance of a redox flow battery |
| TW202310033A (zh) * | 2021-08-05 | 2023-03-01 | 日商東京威力科創股份有限公司 | 預測方法、預測程式、預測裝置、學習方法、學習程式及學習裝置 |
| CN118016733B (zh) * | 2024-04-08 | 2024-06-25 | 天合光能股份有限公司 | 太阳能电池以及太阳能电池的制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3963961B2 (ja) * | 1994-08-31 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| KR100760078B1 (ko) * | 2000-03-13 | 2007-09-18 | 다다히로 오미 | 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법 |
| JP2002083691A (ja) * | 2000-09-06 | 2002-03-22 | Sharp Corp | アクティブマトリックス駆動型有機ｌｅｄ表示装置及びその製造方法 |
| JP5068402B2 (ja) * | 2000-12-28 | 2012-11-07 | 公益財団法人国際科学振興財団 | 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法 |
| JP2002371357A (ja) * | 2001-06-14 | 2002-12-26 | Canon Inc | シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子並びにシリコン系薄膜の形成装置 |
| KR20040108697A (ko) * | 2002-03-29 | 2004-12-24 | 동경 엘렉트론 주식회사 | 전자 디바이스 재료의 제조 방법 |
| TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
| JPWO2004017396A1 (ja) * | 2002-08-14 | 2005-12-08 | 東京エレクトロン株式会社 | 半導体基体上の絶縁膜を形成する方法 |
| CN102290422A (zh) * | 2003-01-15 | 2011-12-21 | 株式会社半导体能源研究所 | 显示装置及其制造方法、剥离方法及发光装置的制造方法 |
| JP4566578B2 (ja) * | 2003-02-24 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法 |
| JP4748943B2 (ja) * | 2003-02-28 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2006
- 2006-04-24 JP JP2006118791A patent/JP5052033B2/ja not_active Expired - Fee Related
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