JP5052033B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5052033B2
JP5052033B2 JP2006118791A JP2006118791A JP5052033B2 JP 5052033 B2 JP5052033 B2 JP 5052033B2 JP 2006118791 A JP2006118791 A JP 2006118791A JP 2006118791 A JP2006118791 A JP 2006118791A JP 5052033 B2 JP5052033 B2 JP 5052033B2
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film
layer
substrate
oxide film
element layer
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Expired - Fee Related
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JP2006118791A
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English (en)
Japanese (ja)
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JP2006332619A (ja
JP2006332619A5 (enExample
Inventor
一貴 桑島
圭恵 高野
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2006332619A5 publication Critical patent/JP2006332619A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006118791A 2005-04-28 2006-04-24 半導体装置の作製方法 Expired - Fee Related JP5052033B2 (ja)

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JP2006118791A JP5052033B2 (ja) 2005-04-28 2006-04-24 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133672 2005-04-28
JP2005133672 2005-04-28
JP2006118791A JP5052033B2 (ja) 2005-04-28 2006-04-24 半導体装置の作製方法

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JP2006332619A JP2006332619A (ja) 2006-12-07
JP2006332619A5 JP2006332619A5 (enExample) 2009-02-26
JP5052033B2 true JP5052033B2 (ja) 2012-10-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081712B2 (en) 2018-10-26 2021-08-03 Saudi Arabian Oil Company Method and system to modify the performance of a redox flow battery

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101430587B1 (ko) * 2006-09-20 2014-08-14 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP5521286B2 (ja) * 2008-05-28 2014-06-11 カシオ計算機株式会社 薄膜素子の製造方法
JP6077382B2 (ja) * 2012-05-11 2017-02-08 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
KR102554691B1 (ko) * 2016-10-07 2023-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
TW202310033A (zh) * 2021-08-05 2023-03-01 日商東京威力科創股份有限公司 預測方法、預測程式、預測裝置、學習方法、學習程式及學習裝置
CN118016733B (zh) * 2024-04-08 2024-06-25 天合光能股份有限公司 太阳能电池以及太阳能电池的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3963961B2 (ja) * 1994-08-31 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
WO1998033362A1 (en) * 1997-01-29 1998-07-30 Tadahiro Ohmi Plasma device
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
KR100760078B1 (ko) * 2000-03-13 2007-09-18 다다히로 오미 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법
JP2002083691A (ja) * 2000-09-06 2002-03-22 Sharp Corp アクティブマトリックス駆動型有機ｌｅｄ表示装置及びその製造方法
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
JP2002371357A (ja) * 2001-06-14 2002-12-26 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子並びにシリコン系薄膜の形成装置
KR20040108697A (ko) * 2002-03-29 2004-12-24 동경 엘렉트론 주식회사 전자 디바이스 재료의 제조 방법
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
JPWO2004017396A1 (ja) * 2002-08-14 2005-12-08 東京エレクトロン株式会社 半導体基体上の絶縁膜を形成する方法
CN102290422A (zh) * 2003-01-15 2011-12-21 株式会社半导体能源研究所 显示装置及其制造方法、剥离方法及发光装置的制造方法
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP4748943B2 (ja) * 2003-02-28 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081712B2 (en) 2018-10-26 2021-08-03 Saudi Arabian Oil Company Method and system to modify the performance of a redox flow battery

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JP2006332619A (ja) 2006-12-07

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