AU2003255034A1 - Method of forming insulation film on semiconductor substrate - Google Patents
Method of forming insulation film on semiconductor substrateInfo
- Publication number
- AU2003255034A1 AU2003255034A1 AU2003255034A AU2003255034A AU2003255034A1 AU 2003255034 A1 AU2003255034 A1 AU 2003255034A1 AU 2003255034 A AU2003255034 A AU 2003255034A AU 2003255034 A AU2003255034 A AU 2003255034A AU 2003255034 A1 AU2003255034 A1 AU 2003255034A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor substrate
- insulation film
- forming insulation
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000009413 insulation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002236343 | 2002-08-14 | ||
JP2002-236343 | 2002-08-14 | ||
PCT/JP2003/010357 WO2004017396A1 (en) | 2002-08-14 | 2003-08-14 | Method of forming insulation film on semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003255034A1 true AU2003255034A1 (en) | 2004-03-03 |
Family
ID=31884408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003255034A Abandoned AU2003255034A1 (en) | 2002-08-14 | 2003-08-14 | Method of forming insulation film on semiconductor substrate |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2004017396A1 (en) |
KR (1) | KR100729989B1 (en) |
CN (1) | CN100380610C (en) |
AU (1) | AU2003255034A1 (en) |
WO (1) | WO2004017396A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7087537B2 (en) * | 2004-03-15 | 2006-08-08 | Sharp Laboratories Of America, Inc. | Method for fabricating oxide thin films |
US20060270066A1 (en) | 2005-04-25 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
US7410839B2 (en) | 2005-04-28 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
US7785947B2 (en) | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
TWI408734B (en) | 2005-04-28 | 2013-09-11 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing the same |
JP5052033B2 (en) * | 2005-04-28 | 2012-10-17 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7838347B2 (en) | 2005-08-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
WO2008041600A1 (en) * | 2006-09-29 | 2008-04-10 | Tokyo Electron Limited | Plasma oxidizing method, plasma processing apparatus, and storage medium |
US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US10312600B2 (en) * | 2016-05-20 | 2019-06-04 | Kymeta Corporation | Free space segment tester (FSST) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2502789B2 (en) * | 1990-05-17 | 1996-05-29 | 松下電器産業株式会社 | Method for manufacturing thin film transistor |
JPH0443642A (en) * | 1990-06-11 | 1992-02-13 | G T C:Kk | Formation of gate insulating film |
JP4105353B2 (en) * | 1999-07-26 | 2008-06-25 | 財団法人国際科学振興財団 | Semiconductor device |
-
2003
- 2003-08-14 CN CNB03822058XA patent/CN100380610C/en not_active Expired - Fee Related
- 2003-08-14 AU AU2003255034A patent/AU2003255034A1/en not_active Abandoned
- 2003-08-14 JP JP2004528882A patent/JPWO2004017396A1/en active Pending
- 2003-08-14 WO PCT/JP2003/010357 patent/WO2004017396A1/en active IP Right Grant
- 2003-08-14 KR KR1020057002438A patent/KR100729989B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100380610C (en) | 2008-04-09 |
KR20050035883A (en) | 2005-04-19 |
KR100729989B1 (en) | 2007-06-20 |
JPWO2004017396A1 (en) | 2005-12-08 |
CN1682357A (en) | 2005-10-12 |
WO2004017396A1 (en) | 2004-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |