AU2003255034A1 - Method of forming insulation film on semiconductor substrate - Google Patents

Method of forming insulation film on semiconductor substrate

Info

Publication number
AU2003255034A1
AU2003255034A1 AU2003255034A AU2003255034A AU2003255034A1 AU 2003255034 A1 AU2003255034 A1 AU 2003255034A1 AU 2003255034 A AU2003255034 A AU 2003255034A AU 2003255034 A AU2003255034 A AU 2003255034A AU 2003255034 A1 AU2003255034 A1 AU 2003255034A1
Authority
AU
Australia
Prior art keywords
semiconductor substrate
insulation film
forming insulation
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003255034A
Inventor
Toshiaki Hongoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003255034A1 publication Critical patent/AU2003255034A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
AU2003255034A 2002-08-14 2003-08-14 Method of forming insulation film on semiconductor substrate Abandoned AU2003255034A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002236343 2002-08-14
JP2002-236343 2002-08-14
PCT/JP2003/010357 WO2004017396A1 (en) 2002-08-14 2003-08-14 Method of forming insulation film on semiconductor substrate

Publications (1)

Publication Number Publication Date
AU2003255034A1 true AU2003255034A1 (en) 2004-03-03

Family

ID=31884408

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003255034A Abandoned AU2003255034A1 (en) 2002-08-14 2003-08-14 Method of forming insulation film on semiconductor substrate

Country Status (5)

Country Link
JP (1) JPWO2004017396A1 (en)
KR (1) KR100729989B1 (en)
CN (1) CN100380610C (en)
AU (1) AU2003255034A1 (en)
WO (1) WO2004017396A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087537B2 (en) * 2004-03-15 2006-08-08 Sharp Laboratories Of America, Inc. Method for fabricating oxide thin films
US20060270066A1 (en) 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
US8318554B2 (en) 2005-04-28 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of forming gate insulating film for thin film transistors using plasma oxidation
US7410839B2 (en) 2005-04-28 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US7785947B2 (en) 2005-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
TWI408734B (en) 2005-04-28 2013-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP5052033B2 (en) * 2005-04-28 2012-10-17 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7608490B2 (en) 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7838347B2 (en) 2005-08-12 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
WO2008041600A1 (en) * 2006-09-29 2008-04-10 Tokyo Electron Limited Plasma oxidizing method, plasma processing apparatus, and storage medium
US7855153B2 (en) 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10312600B2 (en) * 2016-05-20 2019-06-04 Kymeta Corporation Free space segment tester (FSST)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2502789B2 (en) * 1990-05-17 1996-05-29 松下電器産業株式会社 Method for manufacturing thin film transistor
JPH0443642A (en) * 1990-06-11 1992-02-13 G T C:Kk Formation of gate insulating film
JP4105353B2 (en) * 1999-07-26 2008-06-25 財団法人国際科学振興財団 Semiconductor device

Also Published As

Publication number Publication date
CN100380610C (en) 2008-04-09
KR20050035883A (en) 2005-04-19
KR100729989B1 (en) 2007-06-20
JPWO2004017396A1 (en) 2005-12-08
CN1682357A (en) 2005-10-12
WO2004017396A1 (en) 2004-02-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase