WO2004017396A1 - Method of forming insulation film on semiconductor substrate - Google Patents
Method of forming insulation film on semiconductor substrate Download PDFInfo
- Publication number
- WO2004017396A1 WO2004017396A1 PCT/JP2003/010357 JP0310357W WO2004017396A1 WO 2004017396 A1 WO2004017396 A1 WO 2004017396A1 JP 0310357 W JP0310357 W JP 0310357W WO 2004017396 A1 WO2004017396 A1 WO 2004017396A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulating film
- film
- plasma
- semiconductor substrate
- treatment
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 238000009413 insulation Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 169
- 238000011282 treatment Methods 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 27
- 230000003647 oxidation Effects 0.000 claims description 27
- 238000007254 oxidation reaction Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 18
- 238000012986 modification Methods 0.000 claims description 17
- 230000004048 modification Effects 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 238000005137 deposition process Methods 0.000 claims description 11
- 229910052743 krypton Inorganic materials 0.000 claims description 5
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 208000037998 chronic venous disease Diseases 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 26
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 238000012545 processing Methods 0.000 description 58
- 210000002381 plasma Anatomy 0.000 description 46
- 235000012431 wafers Nutrition 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000010726 Vigna sinensis Nutrition 0.000 description 1
- 244000042314 Vigna unguiculata Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003255034A AU2003255034A1 (en) | 2002-08-14 | 2003-08-14 | Method of forming insulation film on semiconductor substrate |
JP2004528882A JPWO2004017396A1 (en) | 2002-08-14 | 2003-08-14 | Method for forming an insulating film on a semiconductor substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002236343 | 2002-08-14 | ||
JP2002-236343 | 2002-08-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004017396A1 true WO2004017396A1 (en) | 2004-02-26 |
Family
ID=31884408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/010357 WO2004017396A1 (en) | 2002-08-14 | 2003-08-14 | Method of forming insulation film on semiconductor substrate |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2004017396A1 (en) |
KR (1) | KR100729989B1 (en) |
CN (1) | CN100380610C (en) |
AU (1) | AU2003255034A1 (en) |
WO (1) | WO2004017396A1 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005268798A (en) * | 2004-03-15 | 2005-09-29 | Sharp Corp | Method of forming oxide thin film |
JP2006332619A (en) * | 2005-04-28 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
US7410839B2 (en) | 2005-04-28 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
US7465677B2 (en) | 2005-04-28 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7785947B2 (en) | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
US7838347B2 (en) | 2005-08-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
US8343816B2 (en) | 2005-04-25 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101523575B (en) * | 2006-09-29 | 2011-02-16 | 东京毅力科创株式会社 | Plasma oxidizing method, plasma processing apparatus |
US10312600B2 (en) * | 2016-05-20 | 2019-06-04 | Kymeta Corporation | Free space segment tester (FSST) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0422127A (en) * | 1990-05-17 | 1992-01-27 | Matsushita Electric Ind Co Ltd | Manufacture of insulating film and manufacture of thin film transistor |
JPH0443642A (en) * | 1990-06-11 | 1992-02-13 | G T C:Kk | Formation of gate insulating film |
WO2001008208A1 (en) * | 1999-07-26 | 2001-02-01 | Tadahiro Ohmi | Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film |
-
2003
- 2003-08-14 WO PCT/JP2003/010357 patent/WO2004017396A1/en active IP Right Grant
- 2003-08-14 CN CNB03822058XA patent/CN100380610C/en not_active Expired - Fee Related
- 2003-08-14 JP JP2004528882A patent/JPWO2004017396A1/en active Pending
- 2003-08-14 KR KR1020057002438A patent/KR100729989B1/en not_active IP Right Cessation
- 2003-08-14 AU AU2003255034A patent/AU2003255034A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0422127A (en) * | 1990-05-17 | 1992-01-27 | Matsushita Electric Ind Co Ltd | Manufacture of insulating film and manufacture of thin film transistor |
JPH0443642A (en) * | 1990-06-11 | 1992-02-13 | G T C:Kk | Formation of gate insulating film |
WO2001008208A1 (en) * | 1999-07-26 | 2001-02-01 | Tadahiro Ohmi | Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4703224B2 (en) * | 2004-03-15 | 2011-06-15 | シャープ株式会社 | Method for producing oxide thin film |
JP2005268798A (en) * | 2004-03-15 | 2005-09-29 | Sharp Corp | Method of forming oxide thin film |
US8785259B2 (en) | 2005-04-25 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
US8343816B2 (en) | 2005-04-25 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic transistor, manufacturing method of semiconductor device and organic transistor |
US7465677B2 (en) | 2005-04-28 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7718547B2 (en) | 2005-04-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
US7785947B2 (en) | 2005-04-28 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma |
US8318554B2 (en) | 2005-04-28 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming gate insulating film for thin film transistors using plasma oxidation |
US7410839B2 (en) | 2005-04-28 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
JP2006332619A (en) * | 2005-04-28 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
US7608490B2 (en) | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7838347B2 (en) | 2005-08-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
US8674366B2 (en) | 2005-08-12 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8324699B2 (en) | 2008-02-08 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN1682357A (en) | 2005-10-12 |
KR100729989B1 (en) | 2007-06-20 |
AU2003255034A1 (en) | 2004-03-03 |
CN100380610C (en) | 2008-04-09 |
JPWO2004017396A1 (en) | 2005-12-08 |
KR20050035883A (en) | 2005-04-19 |
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