JP2006332619A5

JP2006332619A5 -

Info

Publication number: JP2006332619A5
Application number: JP2006118791A
Authority: JP
Filing date: 2006-04-24
Publication date: 2009-02-26
Anticipated expiration: 2026-04-24

Claims

Form a metal film on the substrate,
By performing plasma treatment in an atmosphere containing oxygen on the metal film, a metal oxide film is formed on the surface of the metal film,
Forming a base film on the metal oxide film;
Forming an element layer having a thin film transistor on the base film;
Forming a protective layer on the element layer;
Before SL base film, the element layer, and selectively removing the protective layer, to form an opening,
Separating the base film, the element layer, and the protective layer from the substrate;
Sealing the base film, the element layer, and the protective layer using the first and second films having flexibility,
An electron density of plasma in the vicinity of the substrate is 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less, and an electron temperature is 0.5 eV or more and 1.5 eV or less. Manufacturing method.

A metal oxide film is formed on the substrate using plasma in an atmosphere containing oxygen,
Forming a base film on the metal oxide film;
Forming an element layer having a thin film transistor on the base film;
Forming a protective layer on the element layer;
Before SL base film, the element layer, and selectively removing the protective layer, to form an opening,
Separating the base film, the element layer, and the protective layer from the substrate;
Sealing the base film, the element layer, and the protective layer using the first and second films having flexibility,
An electron density of plasma in the vicinity of the substrate is 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less, and an electron temperature is 0.5 eV or more and 1.5 eV or less. Manufacturing method.

An insulating film is formed on the substrate,
Forming a metal film on the insulating film;
By performing plasma treatment in an atmosphere containing oxygen on the metal film, a metal oxide film is formed on the surface of the metal film,
Forming a silicon oxide film on the metal oxide film;
By performing plasma treatment in an atmosphere containing nitrogen on the silicon oxide film, the surface of the silicon oxide film is nitrided,
Forming a silicon oxide film containing nitrogen on the silicon oxide film having a nitrided surface;
Forming an element layer having a thin film transistor on the silicon oxide film containing nitrogen;
Forming a protective layer on the element layer;
Before Symbol surface oxidized silicon film is nitrided, a silicon oxide film containing the nitrogen, the element layer, and selectively removing the protective layer, to form an opening,
Separating the silicon oxide film having the surface nitrided from the substrate, the silicon oxide film containing nitrogen, the element layer, and the protective layer;
Sealing the silicon oxide film nitrided on the surface using the first and second films having flexibility, the silicon oxide film containing nitrogen, the element layer, and the protective layer;
An electron density of plasma in the vicinity of the substrate is 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less, and an electron temperature is 0.5 eV or more and 1.5 eV or less. Manufacturing method.

An insulating film is formed on the substrate,
Forming a metal oxide film on the insulating film using plasma in an atmosphere containing oxygen;
Forming a silicon oxide film on the metal oxide film;
By performing plasma treatment in an atmosphere containing nitrogen on the silicon oxide film, the surface of the silicon oxide film is nitrided,
Forming a silicon oxide film containing nitrogen on the silicon oxide film having a nitrided surface;
Forming an element layer having a thin film transistor on the silicon oxide film containing nitrogen;
Forming a protective layer on the element layer;
Before Symbol surface silicon oxide film is nitrided, a silicon oxide film containing the nitrogen, the element layer, and selectively removing the protective layer, to form an opening,
Separating the silicon oxide film having the surface nitrided from the substrate, the silicon oxide film containing nitrogen, the element layer, and the protective layer;
Sealing the silicon oxide film nitrided on the surface using the first and second films having flexibility, the silicon oxide film containing nitrogen, the element layer, and the protective layer;
An electron density of plasma in the vicinity of the substrate is 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less, and an electron temperature is 0.5 eV or more and 1.5 eV or less. Manufacturing method.

It according to claim 3 or 4, the atmosphere containing the nitrogen, and _{N 2} or NH _3, mixed gas of a noble gas or a _{N 2} or NH _3, a rare gas, a mixed gas of _{H 2} A method for manufacturing a semiconductor device.

In any one of claims 1 to 5, an atmosphere containing the oxygen, and O ₂ or N _{2 O,} a mixed gas of a rare gas or, and O ₂ or N _{2 O,} and a rare gas, and hydrogen A method for manufacturing a semiconductor device, which is a mixed gas.

7. The method for manufacturing a semiconductor device according to claim 1, wherein a frequency of a power source that generates the plasma is 2.45 GHz.

The method for manufacturing a semiconductor device according to claim 1, wherein the plasma potential is 5 V or less.

9. The protective layer according to claim 1, wherein a DLC film, a film containing carbon, a silicon oxide film containing nitrogen, a silicon nitride film containing oxygen, or a film made of a resin material is formed as the protective layer. A method for manufacturing a semiconductor device.

10. The method for manufacturing a semiconductor device according to claim 1, wherein the opening is formed by irradiation with UV light or laser light.