JP2007043121A5 - - Google Patents
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- JP2007043121A5 JP2007043121A5 JP2006179433A JP2006179433A JP2007043121A5 JP 2007043121 A5 JP2007043121 A5 JP 2007043121A5 JP 2006179433 A JP2006179433 A JP 2006179433A JP 2006179433 A JP2006179433 A JP 2006179433A JP 2007043121 A5 JP2007043121 A5 JP 2007043121A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- element group
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims 5
- 238000009832 plasma treatment Methods 0.000 claims 5
- 239000012298 atmosphere Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 238000005121 nitriding Methods 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims 1
- 239000001272 nitrous oxide Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Claims (7)
前記絶縁膜の上方に素子群を形成し、
前記基板を薄膜化し、
薄膜化された前記基板および前記素子群を覆う可撓性を有するフィルムを設けることで、前記素子群を封止する
ことを特徴とする半導体装置の作製方法。 By the one surface of the substrate subjected to plasma treatment in a nitrogen atmosphere for nitriding the substrate, an insulating film is formed on one surface of the substrate,
Forming an element group above the insulating film ;
Thinning the substrate,
By providing a film having flexibility which covers the thinned the substrate and the element group, the method for manufacturing a semiconductor device, characterized by sealing the element group.
前記第１の絶縁膜の上方に素子群を形成し、
前記基板を薄膜化し、
薄膜化された前記基板に窒素雰囲気下でプラズマ処理を行い前記基板の薄膜化された面を窒化処理することによって、前記基板の薄膜化された面に第２の絶縁膜を形成し、
前記第２の絶縁膜および前記素子群を覆う可撓性を有するフィルムを設けることで、前記素子群を封止する
ことを特徴とする半導体装置の作製方法。 By nitriding the one surface of the substrate subjected to plasma treatment in a nitrogen atmosphere to a substrate, a first insulating film formed on one surface of the substrate,
Forming an element group above the first insulating film ;
Thinning the substrate,
Forming a second insulating film on the thinned surface of the substrate by performing plasma treatment on the thinned substrate in a nitrogen atmosphere and nitriding the thinned surface of the substrate;
The method for manufacturing a semiconductor device , wherein the element group is sealed by providing a flexible film that covers the second insulating film and the element group .
前記絶縁膜の上方に素子群を形成し、
前記基板を薄膜化し、
前記基板に化学処理を行うことによって、前記基板を除去して前記絶縁膜を露出させ、
前記絶縁膜および前記素子群を覆う可撓性を有するフィルムを設けることで、前記素子群を封止する
ことを特徴とする半導体装置の作製方法。 By the one surface of the substrate subjected to plasma treatment in a nitrogen atmosphere for nitriding the substrate, an insulating film is formed on one surface of the substrate,
Forming an element group above the insulating film ;
Thinning the substrate,
By performing chemical treatment on the substrate, the substrate is removed to expose the insulating film ,
A method for manufacturing a semiconductor device , wherein the element group is sealed by providing a flexible film that covers the insulating film and the element group.
前記基板の薄膜化は、前記基板の他方の面から、研削処理または研磨処理の一方または両方を行うことを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 3 ,
Thinning of the substrate, a method for manufacturing a semiconductor device according to the other surface of the substrate, characterized by performing one or both of the grinding treatment or polishing treatment.
前記窒素雰囲気として、窒素と希ガスを含む雰囲気、ＮＨ３と希ガスを含む雰囲気、二酸化窒素と希ガスを含む雰囲気または亜酸化窒素と希ガスを含む雰囲気とすることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 4,
An atmosphere containing nitrogen and a rare gas , an atmosphere containing NH 3 and a rare gas , an atmosphere containing nitrogen dioxide and a rare gas , or an atmosphere containing nitrous oxide and a rare gas is used as the nitrogen atmosphere. Manufacturing method.
前記プラズマ処理は、高周波を用いて電子密度が１×１０１１ｃｍ−３以上１×１０１３ｃｍ−３以下、且つ電子温度が０．５ｅＶ以上１．５ｅＶ以下の条件下で行うことを特徴とする半導体装置の作製方法。 In any one of Claims 1 to 5 ,
The plasma treatment is performed using high frequency under conditions of an electron density of 1 × 10 11 cm −3 to 1 × 10 13 cm −3 and an electron temperature of 0.5 eV to 1.5 eV. A method for manufacturing a semiconductor device.
前記高周波として、マイクロ波を用いることを特徴とする半導体装置の作製方法。 In claim 6 ,
A method for manufacturing a semiconductor device, wherein a microwave is used as the high frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006179433A JP2007043121A (en) | 2005-06-30 | 2006-06-29 | Manufacturing method of semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005192420 | 2005-06-30 | ||
| JP2006179433A JP2007043121A (en) | 2005-06-30 | 2006-06-29 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007043121A JP2007043121A (en) | 2007-02-15 |
| JP2007043121A5 true JP2007043121A5 (en) | 2009-08-13 |
Family
ID=37800767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006179433A Withdrawn JP2007043121A (en) | 2005-06-30 | 2006-06-29 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007043121A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7150906B2 (en) | 2008-11-07 | 2022-10-11 | 株式会社半導体エネルギー研究所 | semiconductor equipment |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5105918B2 (en) * | 2007-03-16 | 2012-12-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP4853832B2 (en) * | 2007-03-29 | 2012-01-11 | Ｔｄｋ株式会社 | Method for forming conductor pattern |
| JP5248412B2 (en) * | 2008-06-06 | 2013-07-31 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| US8871610B2 (en) * | 2008-10-02 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| US20120044445A1 (en) | 2010-08-17 | 2012-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid Crystal Device and Manufacturing Method Thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3878288B2 (en) * | 1997-07-28 | 2007-02-07 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
| JP3927752B2 (en) * | 2000-03-22 | 2007-06-13 | 三菱電機株式会社 | Semiconductor device, liquid crystal display device, manufacturing method of semiconductor device, and manufacturing method of liquid crystal display device |
| DE10122324A1 (en) * | 2001-05-08 | 2002-11-14 | Philips Corp Intellectual Pty | Flexible integrated monolithic circuit |
| JP2003243661A (en) * | 2002-02-14 | 2003-08-29 | Hitachi Ltd | Thin film transistor and method of manufacturing the same |
| TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
| JP2004343031A (en) * | 2002-12-03 | 2004-12-02 | Advanced Lcd Technologies Development Center Co Ltd | Dielectric film, formation method thereof, semiconductor device using dielectric film, and manufacturing method thereof |
-
2006
- 2006-06-29 JP JP2006179433A patent/JP2007043121A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7150906B2 (en) | 2008-11-07 | 2022-10-11 | 株式会社半導体エネルギー研究所 | semiconductor equipment |
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