JP2006332604A5 - - Google Patents

Claims (8)

Forming a semiconductor film over a substrate having an insulating surface;
Forming a gate insulating film on the semiconductor film;
Forming a gate electrode on the gate insulating film;
The gate electrode surface is subjected to high-density plasma at an electron temperature of 0.5 eV to 1.5 eV and an electron density of 1.0 × 10 ¹¹ cm ^{−3 to} 1.0 × 10 ¹³ cm ^−3. A method for manufacturing a semiconductor device, wherein a nitride film is formed on a surface of the gate electrode by nitriding. Forming a semiconductor film having a source region and a drain region over a substrate having an insulating surface;
Forming a gate insulating film on the semiconductor film;
Forming a gate electrode on the gate insulating film;
The gate electrode surface is subjected to high-density plasma at an electron temperature of 0.5 eV to 1.5 eV and an electron density of 1.0 × 10 ¹¹ cm ^{−3 to} 1.0 × 10 ¹³ cm ^−3. By nitriding, a nitride film is formed on the surface of the gate electrode,
Forming an insulating film on the gate electrode;
Forming a wiring electrically connected to the source region or the drain region on the insulating film ;
The wiring surface is nitrided by high-density plasma at an electron temperature of 0.5 eV to 1.5 eV and an electron density of 1.0 × 10 ¹¹ cm ^{−3 to} 1.0 × 10 ¹³ cm ^−3. Alternatively, a metal nitride film or a metal oxide film is formed on the surface of the wiring by oxidation. Forming a semiconductor film having a source region and a drain region over a substrate having an insulating surface;
Forming a gate insulating film on the semiconductor film;
Forming a gate electrode on the gate insulating film;
The gate electrode surface is subjected to high-density plasma at an electron temperature of 0.5 eV to 1.5 eV and an electron density of 1.0 × 10 ¹¹ cm ^{−3 to} 1.0 × 10 ¹³ cm ^−3. By nitriding, a nitride film is formed on the surface of the gate electrode,
Forming a first insulating film on the gate electrode;
Forming a wiring electrically connected to the source region or the drain region on the first insulating film;
The wiring surface is nitrided by high-density plasma at an electron temperature of 0.5 eV to 1.5 eV and an electron density of 1.0 × 10 ¹¹ cm ^{−3 to} 1.0 × 10 ¹³ cm ^−3. Or, by oxidizing, a metal nitride film or a metal oxide film is formed on the wiring surface,
Forming a second insulating film on the metal nitride film or metal oxide film;
Forming a transparent conductive film on the second insulating film;
The transparent conductive film and the second insulating film have an electron temperature of 0.5 eV to 1.5 eV and an electron density of 1.0 × 10 ¹¹ cm ^{−3 to} 1.0 × 10 ¹³ cm ^−3. A method for manufacturing a semiconductor device, characterized by nitriding or oxidizing with high-density plasma under conditions . According to claim 3, after the transparent conductive film and the second insulating film is nitrided or oxidized by the high-density plasma, the method for manufacturing a semiconductor device, which comprises washing over the transparent conductive film. In any one of Claims 2 thru | or 4,
A method for manufacturing a semiconductor device, which comprises using a mixed gas of oxygen and a rare gas or a mixed gas of oxygen, hydrogen, and a rare gas when oxidizing with the high-density plasma. In any one of Claims 1 thru | or 5,
When nitriding with the high-density plasma, a mixed gas of nitrogen and a rare gas, a mixed gas of ammonia and a rare gas, or a mixed gas of nitrogen, hydrogen, and a rare gas is used. . In any one of Claims 1 thru | or 6,
A method for manufacturing a semiconductor device, wherein the substrate is heated to a temperature of 200 ° C. to 550 ° C. when nitriding or oxidizing with the high-density plasma. In any one of Claims 1 thru | or 7 ,
A method for manufacturing a semiconductor device, wherein a material of the gate electrode is molybdenum, tungsten, chromium, tantalum, aluminum, or silicon.