CN100485884C - 电子装置用基板及其处理方法 - Google Patents

电子装置用基板及其处理方法 Download PDF

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Publication number
CN100485884C
CN100485884C CNB2005800110299A CN200580011029A CN100485884C CN 100485884 C CN100485884 C CN 100485884C CN B2005800110299 A CNB2005800110299 A CN B2005800110299A CN 200580011029 A CN200580011029 A CN 200580011029A CN 100485884 C CN100485884 C CN 100485884C
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CN
China
Prior art keywords
insulating film
substrate
fluorine atoms
gas
processing
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Expired - Fee Related
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CNB2005800110299A
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English (en)
Chinese (zh)
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CN1943021A (zh
Inventor
小林保男
川村刚平
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1943021A publication Critical patent/CN1943021A/zh
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Publication of CN100485884C publication Critical patent/CN100485884C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CNB2005800110299A 2004-05-11 2005-05-10 电子装置用基板及其处理方法 Expired - Fee Related CN100485884C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004141022 2004-05-11
JP141022/2004 2004-05-11
PCT/JP2005/008506 WO2005109483A1 (ja) 2004-05-11 2005-05-10 電子装置用基板およびその処理方法

Publications (2)

Publication Number Publication Date
CN1943021A CN1943021A (zh) 2007-04-04
CN100485884C true CN100485884C (zh) 2009-05-06

Family

ID=35320470

Family Applications (1)

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CNB2005800110299A Expired - Fee Related CN100485884C (zh) 2004-05-11 2005-05-10 电子装置用基板及其处理方法

Country Status (4)

Country Link
JP (1) JP4555143B2 (enExample)
KR (1) KR100887439B1 (enExample)
CN (1) CN100485884C (enExample)
WO (1) WO2005109483A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101256035B1 (ko) * 2005-06-20 2013-04-18 고에키자이단호진 고쿠사이카가쿠 신고우자이단 층간 절연막 및 배선 구조와 그것들의 제조 방법
JP5119606B2 (ja) * 2006-03-31 2013-01-16 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP5194393B2 (ja) * 2006-06-23 2013-05-08 東京エレクトロン株式会社 半導体装置の製造方法
JP2008270706A (ja) * 2007-03-26 2008-11-06 Tokyo Electron Ltd 窒化珪素膜および不揮発性半導体メモリ装置
CN101652843B (zh) * 2007-03-26 2011-07-20 东京毅力科创株式会社 氮化硅膜的形成方法、非易失性半导体存储装置的制造方法、非易失性半导体存储装置和等离子体处理装置
US8021975B2 (en) * 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
US8197913B2 (en) * 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
TW201044462A (en) 2009-01-22 2010-12-16 Tokyo Electron Ltd A method for manufacturing semiconductor devices
JP5600885B2 (ja) * 2009-03-19 2014-10-08 凸版印刷株式会社 有機ｅｌ用乾燥装置
JP5304759B2 (ja) * 2010-09-15 2013-10-02 東京エレクトロン株式会社 成膜方法及び半導体装置
JP5700513B2 (ja) * 2010-10-08 2015-04-15 国立大学法人東北大学 半導体装置の製造方法および半導体装置
JP2012164922A (ja) * 2011-02-09 2012-08-30 Yuutekku:Kk 圧電体の製造方法、圧電体及び電子装置
JP5364765B2 (ja) * 2011-09-07 2013-12-11 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP6559087B2 (ja) * 2016-03-31 2019-08-14 東京エレクトロン株式会社 基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218299B1 (en) * 1996-11-14 2001-04-17 Tokyo Electron Limited Semiconductor device and method for producing the same
CN1391138A (zh) * 2001-06-08 2003-01-15 住友精密工业株式会社 基板处理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469761B2 (ja) * 1997-10-30 2003-11-25 東京エレクトロン株式会社 半導体デバイスの製造方法
JP3429171B2 (ja) * 1997-11-20 2003-07-22 東京エレクトロン株式会社 プラズマ処理方法及び半導体デバイスの製造方法
JP4355039B2 (ja) * 1998-05-07 2009-10-28 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP3921917B2 (ja) * 2000-03-31 2007-05-30 セイコーエプソン株式会社 微細構造体の製造方法
KR100746120B1 (ko) * 2001-01-22 2007-08-13 동경 엘렉트론 주식회사 반도체 디바이스의 제조 방법, 플라즈마 처리 방법, 및게이트 절연막 형성 방법
JP4413556B2 (ja) * 2003-08-15 2010-02-10 東京エレクトロン株式会社 成膜方法、半導体装置の製造方法
JP4194521B2 (ja) * 2004-04-07 2008-12-10 東京エレクトロン株式会社 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218299B1 (en) * 1996-11-14 2001-04-17 Tokyo Electron Limited Semiconductor device and method for producing the same
CN1391138A (zh) * 2001-06-08 2003-01-15 住友精密工业株式会社 基板处理装置

Also Published As

Publication number Publication date
JP2005354041A (ja) 2005-12-22
JP4555143B2 (ja) 2010-09-29
KR20070011463A (ko) 2007-01-24
CN1943021A (zh) 2007-04-04
KR100887439B1 (ko) 2009-03-10
WO2005109483A1 (ja) 2005-11-17

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