JP5194393B2 - 半導体装置の製造方法 - Google Patents
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- JP5194393B2 JP5194393B2 JP2006174429A JP2006174429A JP5194393B2 JP 5194393 B2 JP5194393 B2 JP 5194393B2 JP 2006174429 A JP2006174429 A JP 2006174429A JP 2006174429 A JP2006174429 A JP 2006174429A JP 5194393 B2 JP5194393 B2 JP 5194393B2
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Description
特許文献1には、銅の拡散を防止するためのバリア膜として、タンタル(Ta)や窒化タンタル(TaN)などが記載されている。
基板上にフッ素添加カーボン膜からなる絶縁膜を成膜する工程と、
前記絶縁膜に凹部を形成する工程と、
前記凹部内にチタンからなる第1の膜を成膜する工程と、
前記第1の膜の表面にタンタルからなる第2の膜を成膜する工程と、
その後前記凹部内に銅配線を成膜する工程と、
しかる後、前記基板の熱処理を行うことにより、前記第1の膜に含まれるチタンと前記絶縁膜に含まれる炭素とを反応させて、フッ化チタンの生成を抑えながら前記第1の膜と前記絶縁膜との間に炭化チタン膜を形成する工程と、を含むことを特徴とする。前記炭化チタン膜を形成する工程は、前記基板を400℃に加熱する工程であっても良い。また、前記第2の膜を成膜する工程は、タンタル板をスパッタすることにより行われる工程であっても良い。
次に、CF膜70を成膜するために好適な成膜装置の一例について図4を参照して簡単に説明する。同図中の成膜装置10は、真空チャンバである処理容器11、温調手段を備えた載置台12及び載置台12に接続された例えば13.56MHzのバイアス用の高周波電源13を備えている。
フッ化添加カーボン膜の原料となるガスとしてはC5F8ガスに限らず、CF4ガス、C2F6ガス、C3F8ガス、C3F9ガスまたはC4F8ガスなどを用いてもよい。
Ti膜74は、必ずしもスパッタリングによって形成された膜に限られるものではなく、他の成膜方法例えば上述の成膜装置10などを用いて成膜されたものであっても良い。
続いて、Ta膜75の成膜が行われる。Ta膜75を成膜するためには、上述のTi膜74と同様に公知のスパッタ装置を用いることができる。
熱処理温度 :400℃
熱処理時間 :15分
圧力 :266.7Pa(2000mTorr)
雰囲気 :Ar=500sccm
(実験例1:熱処理によるシート抵抗の変化)
ウェハ1〜6に対して最上層の金属(Ta、Ni、Ti等)上に、既述の方法によってCu膜87(図示せず)を成膜した後、上記の熱処理を施し、大気中に取り出した後、それぞれのウェハのシート抵抗を測定した。
(実験結果)
熱処理後の各ウェハ1〜6のシート抵抗の結果を表2に示した。
(実験例2:熱処理によるX線強度の変化)
ウェハ2、3、4及び6に対して実験例1と同様にCu膜87を成膜した後、上記の熱処理を施し、蛍光X線分析(XRF:X−ray Fluorescence Analysis)により、各金属のX線強度を測定して、熱処理前後の各金属膜中の金属原子数の比を求めた。
(実験結果)
熱処理前後の各金属の原子数の比を表3に示す。
(実験例3:元素分析)
次にウェハ3、ウェハ6に対して、各ウェハの上方にCu膜87を成膜し、上述の熱処理を行った後、2次イオン質量分析装置(SIMS:Secondary Ion Mass Spectroscopy)を用いて、深さ方向の各元素(Cu、Ta、Ni、F)の量を測定した。
(実験結果)
熱処理前後におけるウェハ3の結果を図6に示し、ウェハ6の元素分析の結果を図7に示す。図6について考察すると、熱処理前において認められたCu、Niのピークは、熱処理後に消滅しており、これら両金属は合金化したものと考えられる。また合金化した金属への、フッ素の拡散も認められ、NiはCu、Fの両元素に対し十分なバリア性を持っていないことがわかる。一方図7から考察すると、ウェハ6の各元素の2次イオン強度は、深さ方向に置いて熱処理前後でほとんど変わらず、つまりCu、Fの拡散は発生しておらず、バリア膜として最適なものであることが判明した。
(実験例4:結合エネルギー)
次に、以上の実験において良好な結果を示していたウェハ6に対して、ウェハ6中のTi膜83がどのようになっているかを調べるため、以下の実験を行った。実験にはX線光電子分光法(XPS:X−ray Photoelectron Spectoscopy)を用いて、熱処理前後におけるTi膜83の上層(Ta膜84付近)、Ti膜83の下層(CF膜82付近)のチタン化合物の結合エネルギーを測定した。尚、この実験は、Cu膜87を成膜せずに行った。
(実験結果)
この結果を図8に示す。熱処理前のTi膜83の下層において、炭化チタンと酸フッ化チタン(TiOF)とに帰属されるピークが確認された。これは、既述の通り、Ti膜83が成膜される時にチタンの表面が活性化して、CF膜82中の元素(炭素及びフッ素)と反応を起こしたものと考えられる。一方、熱処理後には、炭化チタンのピーク強度は増加していたが、酸フッ化チタンのピーク強度の変化は見られなかった。このことから、Ti膜83の下層では、熱処理によって炭化チタンが選択的に生成したと考えられる。
11 処理容器
12 載置台
70 CF膜
74 Ti膜
75 Ta膜
76 Cu配線
78 バリア膜
Claims (3)
- 基板上にフッ素添加カーボン膜からなる絶縁膜を成膜する工程と、
前記絶縁膜に凹部を形成する工程と、
チタン板をスパッタすることにより前記凹部内に第1の膜を成膜する工程と、
前記第1の膜の表面にタンタルからなる第2の膜を成膜する工程と、
その後前記凹部内に銅配線を形成する工程と、
しかる後、前記基板の熱処理を行うことにより、前記第1の膜に含まれるチタンと前記絶縁膜に含まれる炭素とを反応させて、フッ化チタンの生成を抑えながら前記第1の膜と前記絶縁膜との間に炭化チタン膜を形成する工程と、を含むことを特徴とする半導体装置の製造方法。 - 前記炭化チタン膜を形成する工程は、前記基板を400℃に加熱する工程であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第2の膜を成膜する工程は、タンタル板をスパッタすることにより行われることを特徴とする請求項1または2に記載の半導体装置の製造方法。
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JP2006174429A JP5194393B2 (ja) | 2006-06-23 | 2006-06-23 | 半導体装置の製造方法 |
US12/305,049 US20090134518A1 (en) | 2006-06-23 | 2007-06-06 | Semiconductor device and manufacturing method of semiconductor device |
EP07744793A EP2034517A4 (en) | 2006-06-23 | 2007-06-06 | SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD |
PCT/JP2007/061450 WO2007148535A1 (ja) | 2006-06-23 | 2007-06-06 | 半導体装置及び半導体装置の製造方法 |
CNA2007800206271A CN101461043A (zh) | 2006-06-23 | 2007-06-06 | 半导体装置及半导体装置的制造方法 |
KR1020087029046A KR20090003368A (ko) | 2006-06-23 | 2007-06-06 | 반도체 장치 및 반도체 장치의 제조 방법 |
TW096122758A TW200811953A (en) | 2006-06-23 | 2007-06-23 | Semiconductor device and semiconductor device manufacturing method |
IL195951A IL195951A0 (en) | 2006-06-23 | 2008-12-15 | Semiconductor device and manufacturing method of semiconductor device |
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CN (1) | CN101461043A (ja) |
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JP5714004B2 (ja) * | 2009-06-26 | 2015-05-07 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP5364765B2 (ja) | 2011-09-07 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
US8691709B2 (en) * | 2011-09-24 | 2014-04-08 | Tokyo Electron Limited | Method of forming metal carbide barrier layers for fluorocarbon films |
JP2015195282A (ja) * | 2014-03-31 | 2015-11-05 | 東京エレクトロン株式会社 | 成膜方法、半導体製造方法及び半導体装置 |
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AU2015300184A1 (en) * | 2014-08-04 | 2017-03-02 | Jx Nippon Oil & Energy Corporation | Method for manufacturing member having irregular pattern |
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JPH03140496A (ja) * | 1989-10-25 | 1991-06-14 | Daido Steel Co Ltd | 母材の表面着色方法 |
JP3158598B2 (ja) * | 1991-02-26 | 2001-04-23 | 日本電気株式会社 | 半導体装置およびその製造方法 |
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JP4260764B2 (ja) * | 1999-03-09 | 2009-04-30 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
WO2000054329A1 (fr) * | 1999-03-09 | 2000-09-14 | Tokyo Electron Limited | Dispositif semi-conducteur et procede de fabrication correspondant |
EP1077479A1 (en) * | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
KR101031682B1 (ko) * | 2000-09-18 | 2011-04-29 | 에이씨엠 리서치, 인코포레이티드 | 초저 k 유전체를 갖는 금속을 집적시키는 방법 |
JP3817463B2 (ja) * | 2001-11-12 | 2006-09-06 | 新光電気工業株式会社 | 多層配線基板の製造方法 |
JP2005026386A (ja) * | 2003-07-01 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP4413556B2 (ja) * | 2003-08-15 | 2010-02-10 | 東京エレクトロン株式会社 | 成膜方法、半導体装置の製造方法 |
JP2005109138A (ja) | 2003-09-30 | 2005-04-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4715207B2 (ja) * | 2004-01-13 | 2011-07-06 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び成膜システム |
JP4194521B2 (ja) | 2004-04-07 | 2008-12-10 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP4555143B2 (ja) * | 2004-05-11 | 2010-09-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
US20060113675A1 (en) * | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
JP2006190884A (ja) * | 2005-01-07 | 2006-07-20 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2006135363A (ja) * | 2006-02-14 | 2006-05-25 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
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2006
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- 2007-06-06 KR KR1020087029046A patent/KR20090003368A/ko active IP Right Grant
- 2007-06-06 EP EP07744793A patent/EP2034517A4/en not_active Withdrawn
- 2007-06-06 CN CNA2007800206271A patent/CN101461043A/zh active Pending
- 2007-06-06 US US12/305,049 patent/US20090134518A1/en not_active Abandoned
- 2007-06-06 WO PCT/JP2007/061450 patent/WO2007148535A1/ja active Application Filing
- 2007-06-23 TW TW096122758A patent/TW200811953A/zh unknown
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KR20090003368A (ko) | 2009-01-09 |
EP2034517A4 (en) | 2010-07-21 |
JP2008004841A (ja) | 2008-01-10 |
EP2034517A1 (en) | 2009-03-11 |
WO2007148535A1 (ja) | 2007-12-27 |
IL195951A0 (en) | 2009-09-01 |
US20090134518A1 (en) | 2009-05-28 |
CN101461043A (zh) | 2009-06-17 |
TW200811953A (en) | 2008-03-01 |
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