JP2010232538A - 半導体装置とその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 143
- 239000010410 layer Substances 0.000 claims abstract description 117
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 229910000510 noble metal Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims description 2
- -1 nitrogen ions Chemical class 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
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- 150000002500 ions Chemical class 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052763 palladium Inorganic materials 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 239000011366 tin-based material Substances 0.000 description 1
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
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Abstract
【解決手段】層間絶縁膜15に形成された凹部16、17内には、その底部および側壁部に沿ってバリアメタル層20が形成されている。バリアメタル層20は側壁部上に堆積された第1の部分と底部上に堆積された第2の部分とを有する。凹部16、17内にはバリアメタル層を介して金属配線層が形成される。バリアメタル層20の第1の部分はTi含有量が50原子%を超えるTiNx膜からなり、第2の部分は第1の部分よりTi含有量が多いTiNx膜またはTi膜からなる。
【選択図】図10
Description
Claims (5)
- 半導体基板と、
前記半導体基板上に形成され、凹部を有する層間絶縁膜と、
前記凹部の底部および側壁部に沿って形成され、前記側壁部上に堆積された第1の部分と前記底部上に堆積された第2の部分とを有するバリアメタル層と、
前記バリアメタル層を介して前記凹部内に形成された金属配線層とを具備し、
前記第1の部分はTiおよびNを含み、酸素および貴金属成分を除く全成分におけるTi含有量が50原子%を超えるTiNx膜からなり、前記第2の部分はTiおよびNを含み、酸素および貴金属成分を除く全成分におけるTi含有量が50原子%を超えるTiNx膜、またはTi膜からなり、前記第2の部分のTi含有量の体積平均が前記第1の部分のTi含有量の体積平均と比べて相対的に多いことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記第2の部分の酸素および貴金属成分を除く全成分におけるN含有量が40原子%未満であることを特徴とする半導体装置。 - 半導体基板上に層間絶縁膜を形成する工程と、
前記層間絶縁膜に凹部を形成する工程と、
前記凹部の底部および側壁部に沿って、TiおよびNを含み、酸素および貴金属成分を除く全成分におけるTi含有量が50原子%を超える第1のTiNx膜からなる第1の層を形成する工程と、
前記側壁部上に堆積した前記第1の層上と比較して前記底部上に堆積した前記第1の層上に相対的に多く形成されるように、TiおよびNを含み、酸素および貴金属成分を除く全成分におけるTi含有量が第1のTiNx膜より多い第2のTiNx膜、またはTi膜からなる第2の層を形成する工程と
を具備することを特徴とする半導体装置の製造方法。 - 半導体基板上に層間絶縁膜を形成する工程と、
前記層間絶縁膜に凹部を形成する工程と、
前記凹部の底部および側壁部に沿って、TiおよびNを含み、酸素および貴金属成分を除く全成分におけるTi含有量が50原子%を超えるTiNx膜、またはTi膜からなる層を形成する工程と、
前記底部上に堆積した前記層と比較して前記側壁部上に堆積した前記層が相対的に多く窒化されるように、窒素イオンおよび窒素ラジカルから選ばれる少なくとも1種を用いて前記層を窒化する工程と
を具備することを特徴とする半導体装置の製造方法。 - 請求項3または請求項4記載の半導体装置の製造方法において、
前記底部上に堆積した前記層の酸素および貴金属成分を除く全成分におけるN含有量が40原子%未満であることを特徴とする半導体装置の製造方法。
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JP2009080274A JP5025679B2 (ja) | 2009-03-27 | 2009-03-27 | 半導体装置 |
US12/712,001 US20100244256A1 (en) | 2009-03-27 | 2010-02-24 | Semiconductor device and manufacturing method thereof |
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JP2009080274A JP5025679B2 (ja) | 2009-03-27 | 2009-03-27 | 半導体装置 |
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JP2011248576A Division JP2012074714A (ja) | 2011-11-14 | 2011-11-14 | 半導体装置の製造方法 |
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JP2010232538A true JP2010232538A (ja) | 2010-10-14 |
JP5025679B2 JP5025679B2 (ja) | 2012-09-12 |
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JP2009080274A Expired - Fee Related JP5025679B2 (ja) | 2009-03-27 | 2009-03-27 | 半導体装置 |
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JP (1) | JP5025679B2 (ja) |
Cited By (1)
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CN103515221A (zh) * | 2012-06-21 | 2014-01-15 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
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US8710660B2 (en) * | 2012-07-20 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid interconnect scheme including aluminum metal line in low-k dielectric |
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JP2005244178A (ja) * | 2004-01-26 | 2005-09-08 | Toshiba Corp | 半導体装置の製造方法 |
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JP2008078390A (ja) * | 2006-09-21 | 2008-04-03 | Fujitsu Ltd | 半導体装置およびその製造方法 |
KR100885186B1 (ko) * | 2007-05-03 | 2009-02-23 | 삼성전자주식회사 | 확산 베리어 필름을 포함하는 반도체 소자의 형성 방법 |
US7799674B2 (en) * | 2008-02-19 | 2010-09-21 | Asm Japan K.K. | Ruthenium alloy film for copper interconnects |
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JP2003124313A (ja) * | 2001-10-19 | 2003-04-25 | Nec Corp | 半導体装置およびその製造方法 |
JP2007043038A (ja) * | 2005-06-28 | 2007-02-15 | Tokyo Electron Ltd | 金属膜の成膜方法、成膜装置及び記憶媒体 |
JP2008047886A (ja) * | 2006-07-21 | 2008-02-28 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
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