JP5714004B2 - プラズマ処理方法 - Google Patents
プラズマ処理方法 Download PDFInfo
- Publication number
- JP5714004B2 JP5714004B2 JP2012517495A JP2012517495A JP5714004B2 JP 5714004 B2 JP5714004 B2 JP 5714004B2 JP 2012517495 A JP2012517495 A JP 2012517495A JP 2012517495 A JP2012517495 A JP 2012517495A JP 5714004 B2 JP5714004 B2 JP 5714004B2
- Authority
- JP
- Japan
- Prior art keywords
- fluorinated carbon
- carbon layer
- layer
- power
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/50—Multilayers
- B05D7/52—Two layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
- B05D5/083—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface involving the use of fluoropolymers
Description
以下の記載は本発明の範囲、適用可能性又は開示される構成をなんら制限するものではない。むしろ好ましい例示的実施態様についての以下の説明は、当業者に、ここで開示された好ましい例示的実施態様について実施するための実施可能記載を提供するものである。留意すべきは、本発明は添付の特許請求の範囲で定められる本発明の本質及び範囲から逸脱することなく異なる形態で実施されるということである。
フッ素化炭素(CFx)絶縁層の、絶縁性、接着性及び操作上の信頼性を評価するために、いくつかの実験サンプルを本発明に従い製造した。実験サンプルはその後上記の性能を試験するために異なる試験の対象とした。以下、これらの評価の結果について詳細に説明する。
Claims (19)
- 絶縁層としてフッ素化炭素層を持つ半導体装置を製造する方法であり、前記方法は:
ラジアルラインスロットアンテナプラズマ装置を用いることによって励起される低電子温度を有するマイクロ波パワー励起プラズマを用いて第1のフッ素化炭素層を形成するステップ;及び
RFパワー励起プラズマを用いてフッ素原子が脱離した第2のフッ素化炭素層を形成するステップであって、前記第2のフッ素化炭素層が前記第1のフッ素化炭素層の表面上に積層されることで絶縁層又は金属層との接着特性を改善するステップ;
を含む、方法。 - 請求項1に記載の方法であり、前記第1のフッ素化炭素層が基板上に形成され、前記第2のフッ素化炭素層が前記第1のフッ素化炭素層上に形成される、方法。
- 請求項2に記載の方法であり、さらに、前記第1のフッ素化炭素層の表面を表面変性させて、前記第2のフッ素化炭素層が形成される前に前記表面上のフッ素化合物を減少させる、方法。
- 請求項3に記載の方法であり、前記表面変性プロセスを実施するステップが、前記第1のフッ素化炭素層の前記表面を、アルゴン中で前記RFパワー励起プラズマに暴露させるステップを含む、方法。
- 請求項2に記載の方法であり、前記第2のフッ素化炭素層が、前記第1のフッ素化炭素層を形成する前に前記基板上に堆積される第3の層上に形成され、前記第1のフッ素化炭素層が、前記第2のフッ素化炭素層上に形成される、方法。
- 請求項1に記載の方法であり、前記第1のフッ素化炭素層が、1200Wから3000Wの範囲のマイクロ波パワー、0Wから120Wの範囲のRFパワー、20mTorrから80mTorrの圧力、20秒から150秒のプロセス時間で、形成される、方法。
- 請求項6に記載の方法であり、前記第1のフッ素化炭素層は100nmの厚さを持つ、方法。
- 請求項1に記載の方法であり、前記第2のフッ素化炭素層が、0Wから1000Wの範囲のマイクロ波パワー、15Wから120Wの範囲のRFパワー、20mTorrから80mTorrの圧力、5秒から60秒のプロセス時間で形成される、方法。
- 請求項8に記載の方法であり、前記第2のフッ素化炭素層が0から10nmの範囲の厚さを持つ、方法。
- 請求項1に記載の方法であり、前記第2のフッ素化炭素層が、フッ素化炭素含有ガス及び酸素含有ガスにより形成される、方法。
- プラズマ反応プロセスを用いるフッ素化炭素層を形成するための方法であり、前記方法は:
ラジアルラインスロットアンテナプラズマ装置を用いることによって励起される低電子温度を有するマイクロ波パワー励起プラズマを用いて第1のフッ素化炭素層を形成するステップ;及び
RFパワー励起プラズマを用いてフッ素原子が脱離した第2フッ素化炭素層を形成するステップであって、前記第2のフッ素化炭素層が前記第1のフッ素化炭素層の表面上に積層されることで絶縁層又は金属層との接合特性を改善するステップ;
を含む、方法。 - 請求項11に記載の方法であり、前記第1のフッ素化炭素層が基板上に形成され、及び前記第2のフッ素化炭素層が前記第1のフッ素化炭素層上に形成される、方法。
- 請求項12に記載の方法であり、さらに、前記第1のフッ素化炭素層の表面の表面変性を実施して、前記第2のフッ素化炭素層の形成前に前記表面のフッ素化合物を減少させるステップを含む、方法。
- 請求項13に記載の方法であり、前記表面変性プロセスを実施するステップが、前記第1のフッ素化炭素層の前記表面を、アルゴン雰囲気下でRFパワー励起プラズマへ暴露するステップを含む、方法。
- 請求項12に記載の方法であり、前記第2のフッ素化炭素層が、前記第1のフッ素化炭素層を形成する前に、前記基板上に堆積される第3の層上に形成され、及び前記第1のフッ素化炭素層が前記第2のフッ素化炭素層上に形成される、方法。
- 請求項11に記載の方法であり、前記第1のフッ素化炭素層が、1200Wから3000Wの範囲のマイクロ波パワー、0Wから120Wの範囲のRFパワー、20mTorrから80mTorrの範囲の圧力、20秒から150秒の範囲のプロセス時間で形成される、方法。
- 請求項16に記載の方法であり、前記第1のフッ素化炭素層が100nmの厚さを持つ、方法。
- 請求項11に記載の方法であり、前記第2のフッ素化炭素層が、0Wから1000Wの範囲のマイクロ波パワー、15Wから120Wの範囲のRFパワー、20mTorrから80mTorrの範囲の圧力、5秒から60秒の範囲のプロセス時間で形成される、方法。
- 請求項18に記載の方法であり、前記第2のフッ素化炭素層が0nmから10nmの厚さを持つ、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26968609P | 2009-06-26 | 2009-06-26 | |
US61/269,686 | 2009-06-26 | ||
PCT/US2010/001832 WO2010151336A1 (en) | 2009-06-26 | 2010-06-25 | Plasma treatment method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012531741A JP2012531741A (ja) | 2012-12-10 |
JP5714004B2 true JP5714004B2 (ja) | 2015-05-07 |
Family
ID=43386822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012517495A Expired - Fee Related JP5714004B2 (ja) | 2009-06-26 | 2010-06-25 | プラズマ処理方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8778810B2 (ja) |
JP (1) | JP5714004B2 (ja) |
KR (1) | KR20120049239A (ja) |
CN (1) | CN102803552B (ja) |
TW (1) | TWI423331B (ja) |
WO (1) | WO2010151336A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2979215B1 (fr) * | 2011-08-26 | 2013-08-23 | Seb Sa | Article culinaire comportant un revetement antiadhesif a base de resine fluorocarbonee presentant des proprietes ameliorees d'adherence au support |
WO2016123090A1 (en) | 2015-01-26 | 2016-08-04 | Tokyo Electron Limited | Method and system for high precision etching of substrates |
JP2016207788A (ja) * | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | 上部電極の表面処理方法、プラズマ処理装置及び上部電極 |
CN110133923A (zh) * | 2019-06-05 | 2019-08-16 | 京东方科技集团股份有限公司 | 液晶显示面板、其制备方法及显示装置 |
CN113275217B (zh) * | 2021-05-18 | 2022-06-24 | 佛山市思博睿科技有限公司 | 等离子体接枝共聚膜层的制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02192402A (ja) * | 1989-01-20 | 1990-07-30 | Fujitsu Ltd | 酸化物超伝導材料の保護膜の形成方法 |
EP0627763B1 (en) * | 1993-05-31 | 2004-12-15 | STMicroelectronics S.r.l. | Process for improving the adhesion between dielectric layers at their interface in semiconductor devices manufacture |
JP3402972B2 (ja) | 1996-11-14 | 2003-05-06 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP3178375B2 (ja) * | 1997-06-03 | 2001-06-18 | 日本電気株式会社 | 絶縁膜の形成方法 |
JPH1174204A (ja) * | 1997-06-30 | 1999-03-16 | Matsushita Electric Ind Co Ltd | 半導体薄膜の製造方法およびその装置 |
US6020458A (en) * | 1997-10-24 | 2000-02-01 | Quester Technology, Inc. | Precursors for making low dielectric constant materials with improved thermal stability |
JPH11233501A (ja) * | 1998-02-09 | 1999-08-27 | Tokyo Electron Ltd | プラズマ成膜方法 |
EP1033746A4 (en) * | 1997-11-20 | 2003-05-28 | Tokyo Electron Ltd | PLASMA DEPOSITION OF A FILM |
KR100382388B1 (ko) * | 1997-11-27 | 2003-05-09 | 동경 엘렉트론 주식회사 | 플라즈마 박막증착 방법 및 반도체 디바이스 |
US6068884A (en) * | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
JP2000133710A (ja) * | 1998-10-26 | 2000-05-12 | Tokyo Electron Ltd | 半導体装置及びその製造方法 |
US6528865B1 (en) * | 1999-01-22 | 2003-03-04 | Intel Corporation | Thin amorphous fluorocarbon films |
US6127004A (en) * | 1999-01-29 | 2000-10-03 | Eastman Kodak Company | Forming an amorphous fluorocarbon layer in electroluminescent devices |
JP5194393B2 (ja) * | 2006-06-23 | 2013-05-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
WO2008056748A1 (en) * | 2006-11-09 | 2008-05-15 | National University Corporation Tohoku University | Interlayer insulating film, wiring structure, electronic device and method for manufacturing the interlayer insulating film, the wiring structure and the electronic device |
JP2009088267A (ja) | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | 成膜方法、成膜装置、記憶媒体及び半導体装置 |
TWI392056B (zh) * | 2008-03-12 | 2013-04-01 | Tokyo Electron Ltd | 半導體裝置及其製造方法 |
-
2010
- 2010-06-25 KR KR1020127002030A patent/KR20120049239A/ko not_active Application Discontinuation
- 2010-06-25 WO PCT/US2010/001832 patent/WO2010151336A1/en active Application Filing
- 2010-06-25 JP JP2012517495A patent/JP5714004B2/ja not_active Expired - Fee Related
- 2010-06-25 US US13/380,843 patent/US8778810B2/en not_active Expired - Fee Related
- 2010-06-25 TW TW099120840A patent/TWI423331B/zh not_active IP Right Cessation
- 2010-06-25 CN CN201080028783.4A patent/CN102803552B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8778810B2 (en) | 2014-07-15 |
CN102803552B (zh) | 2015-06-24 |
JP2012531741A (ja) | 2012-12-10 |
WO2010151336A1 (en) | 2010-12-29 |
TW201130047A (en) | 2011-09-01 |
TWI423331B (zh) | 2014-01-11 |
CN102803552A (zh) | 2012-11-28 |
US20120098147A1 (en) | 2012-04-26 |
KR20120049239A (ko) | 2012-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101185757B1 (ko) | 층간 절연막 및 배선 구조와 그것들의 제조 방법 | |
TW493244B (en) | Semiconductor device and method of manufacturing the same | |
WO2005069367A1 (ja) | 半導体装置の製造方法および成膜システム | |
KR101110103B1 (ko) | 성막 방법, 성막 장치, 기억 매체 및, 반도체 장치 | |
KR20010075566A (ko) | 반도체 장치 및 그 제조 방법 | |
WO2007138841A1 (ja) | 成膜方法、成膜装置及び記憶媒体、並びに半導体装置 | |
JP5714004B2 (ja) | プラズマ処理方法 | |
JP5320570B2 (ja) | 層間絶縁膜、配線構造および電子装置と、それらの製造方法 | |
JP5082411B2 (ja) | 成膜方法 | |
JP4578507B2 (ja) | 半導体装置の製造方法、半導体製造装置及び記憶媒体 | |
JP5194393B2 (ja) | 半導体装置の製造方法 | |
JP5119606B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
TW554446B (en) | Semiconductor device manufacturing method | |
JP5710606B2 (ja) | アモルファスカーボンのドーピングによるフルオロカーボン(CFx)の接合の改善 | |
JP2011155077A (ja) | 半導体装置の製造方法 | |
JP2004200203A (ja) | 半導体装置及びその製造方法 | |
US9472392B2 (en) | Step coverage dielectric | |
KR101179111B1 (ko) | 에칭 방법 및 기억 매체 | |
JP2002134494A (ja) | 半導体装置およびその製造方法 | |
JP3717073B2 (ja) | 半導体装置の製造方法 | |
JP5304759B2 (ja) | 成膜方法及び半導体装置 | |
JP2008085297A (ja) | 半導体装置の製造方法 | |
JP2005019977A (ja) | 半導体装置の製造方法 | |
JP2008227308A (ja) | 絶縁膜の形成方法およびこれを用いた半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130624 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140826 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141023 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141125 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150310 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5714004 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |