JP5261629B2 - ストップ−オン−アルミニウム処理を含むウェーハ処理のためのシステム及び方法 - Google Patents
ストップ−オン−アルミニウム処理を含むウェーハ処理のためのシステム及び方法 Download PDFInfo
- Publication number
- JP5261629B2 JP5261629B2 JP2007531406A JP2007531406A JP5261629B2 JP 5261629 B2 JP5261629 B2 JP 5261629B2 JP 2007531406 A JP2007531406 A JP 2007531406A JP 2007531406 A JP2007531406 A JP 2007531406A JP 5261629 B2 JP5261629 B2 JP 5261629B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic member
- layer
- magnetic
- tunnel barrier
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 69
- 238000012545 processing Methods 0.000 title description 11
- 229910052782 aluminium Inorganic materials 0.000 title description 3
- 230000005291 magnetic effect Effects 0.000 claims description 71
- 230000005294 ferromagnetic effect Effects 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 29
- 229910003321 CoFe Inorganic materials 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910019236 CoFeB Inorganic materials 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 131
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 51
- 230000008569 process Effects 0.000 description 36
- 235000012431 wafers Nutrition 0.000 description 20
- 239000010408 film Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 239000006117 anti-reflective coating Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 210000004027 cell Anatomy 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- -1 Tungsten Nitride Chemical class 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000009813 interlayer exchange coupling reaction Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
本出願は、2004年9月9日に出願された、Robert Ditizioによる名称「SYSTEM AND METHOD FOR PROCESSING A WAFER INCLUDING STOP−ON−ALUMINUM PROCESSING(ストップ−オン−アルミニウム加工を含むウェーハ処理のためのシステム及び方法)」の米国特許出願10/937,660(代理人整理番号TEGL−01172US0)に対する優先権を主張する。
本発明は、全体的に半導体製造に関し、詳細には磁気トンネル接合デバイスの製造に関する。
Claims (13)
- 磁気トンネル接合デバイスを作製する方法であって、
(a)第1の磁性部材を形成する段階と、
(b)第2の磁性部材を形成する段階と、
(c)前記第1の磁性部材と前記第2の磁性部材との間に配置されたAl2O3から構成され、エッチングによって前記第1の磁性部材と前記第2の磁性部材との間に電気短絡を生じることができるほど薄い絶縁トンネル障壁層を形成する段階と、
(d)前記第2の磁性部材及び前記絶縁トンネル障壁層の側部が、前記側部から外方に突出する非垂直傾斜プロファイルを定めるように、前記第2の磁性部材、前記絶縁トンネル障壁層、及び第1の磁性部材の選択部分をエッチングする段階と、
(e)前記絶縁トンネル障壁層を停止層として使用して第2の磁性部材を選択的にプラズマエッチングして、前記絶縁トンネル障壁層を貫通せずに前記第2の磁性部材が前記第1の磁性部材から電気絶縁されるようする段階と、
を含み、前記第2の磁性部材、前記絶縁トンネル障壁層、そして第1の磁性部材が、階段状プロファイルを形成する、方法。 - 前記方法が更に、前記段階(c)の後で且つ前記段階(d)の前に、
(c1)前記第2の磁性部材の上側表面上にコンタクト層を形成する段階と、
(c2)前記コンタクト層を覆ってパターン化マスクを形成する段階と、
(c3)前記コンタクト層の一部を選択的に除去する段階と、
(c4)前記パターン化マスクを除去する段階と、
を含む請求項1に記載の方法。 - 前記パターン化マスクがハードマスクを含むことを特徴とする請求項2に記載の方法。
- 前記パターン化マスクがフォトレジストを含む請求項2に記載の方法。
- 前記段階(d)が、第1のハロゲンベースの化学的機能性エッチャント化学種を含む第1のプラズマ源ガスを用いてプラズマエッチングする段階を含み、
前記段階(e)が、アルゴン及び酸素を含む第2のプラズマ源ガスを用いてプラズマエッチングする段階を含む、
ことを特徴とする請求項1に記載の方法。 - 前記段階(d)が、Cl2とBCl3との混合物を含むエッチャント化学種を用いて反応プラズマエッチングする段階を含む請求項1に記載の方法。
- 前記段階(e)が、前記エッチャント化学種に酸素を付加する段階を含む請求項6に記載の方法。
- 前記磁気トンネル接合デバイスが、磁気ランダムアクセスメモリデバイスで利用されることを特徴とする請求項1に記載の方法。
- 前記方法が更に、前記段階(e)に続き、
(1)前記デバイスをHe及びH2を含有する環境内でプラズマ処理して腐食材料を除去する段階と、
(2)任意選択的に、前記処理されたデバイスを洗浄する段階と、
(3)前記デバイスを焼成して前記He及びH2を除去する段階と、
を含む請求項1に記載の方法。 - 前記段階(1)が、100℃から285℃の温度でプラズマ処理を含み、前記環境が、少なくとも96容積%のHeと4容積%未満のH2とを含有し、前記段階(3)が、100℃から285℃の温度で前記デバイスを加熱する段階を含むことを特徴とする請求項9に記載の方法。
- 前記第1の磁性部材が、対象とする範囲において印加磁場の存在下で好ましい方向に固定された磁気モーメントを有する固定強磁性層であり、前記第2の磁性部材が、対象とする範囲において印加磁場の存在下で磁気モーメントが自由に回転するフリー強磁性層であることを特徴とする請求項1に記載の方法。
- 前記固定強磁性層が、NiFe、CoFe、CoFeB、NiFeCr、CoNiFe及びこれらの混合物からなる群から選択された材料から形成され、前記フリー強磁性層が、NiFe、CoFe、CoFeB、NiFeCr、CoNiFe及びこれらの混合物からなる群から選択された材料から形成されることを特徴とする請求項11に記載の方法。
- 磁気トンネル接合デバイスを作製する方法であって、
(a)第1の磁性部材を形成する段階と、
(b)第2の磁性部材を形成する段階と、
(c)前記第1の磁性部材と前記第2の磁性部材との間に配置されたAl2O3から構成され、エッチングによって前記第1の磁性部材と前記第2の磁性部材との間に電気短絡を生じることができるほど薄い絶縁トンネル障壁層を形成する段階と、
(d)前記第2の磁性部材の表面にコンタクト層を形成する段階と、
(e)前記コンタクト層の上にパターン化マスクを形成する段階と、
(f)前記コンタクト層の一部を選択的に除去する段階と、
(g)前記パターン化マスクを除去する段階と、
(h)前記第2の磁性部材及び前記絶縁トンネル障壁層の側部が前記側部から外方に突出する非垂直傾斜プロファイルを定めるように、前記第2の磁性部材、前記絶縁トンネル障壁層、及び第1の磁性部材の一部を除去する段階と、
(i)前記絶縁トンネル障壁層を停止層として使用して前記第2の磁性部材をオーバーエッチングする段階であって、これにより、階段状プロファイルが隔離領域を定め、この隔離領域が、前記第2の磁性部材と第1の磁性部材とを分離する前記絶縁トンネル障壁層の露出水平面となる段階と、
を含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/937,660 | 2004-09-09 | ||
US10/937,660 US7169623B2 (en) | 2004-09-09 | 2004-09-09 | System and method for processing a wafer including stop-on-aluminum processing |
PCT/US2005/032303 WO2006029374A2 (en) | 2004-09-09 | 2005-09-09 | System and method for processing a wafer including stop-on-aluminum processing |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008512875A JP2008512875A (ja) | 2008-04-24 |
JP2008512875A5 JP2008512875A5 (ja) | 2008-10-16 |
JP5261629B2 true JP5261629B2 (ja) | 2013-08-14 |
Family
ID=35996768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007531406A Active JP5261629B2 (ja) | 2004-09-09 | 2005-09-09 | ストップ−オン−アルミニウム処理を含むウェーハ処理のためのシステム及び方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7169623B2 (ja) |
JP (1) | JP5261629B2 (ja) |
WO (1) | WO2006029374A2 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7374952B2 (en) * | 2004-06-17 | 2008-05-20 | Infineon Technologies Ag | Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof |
US7368299B2 (en) * | 2004-07-14 | 2008-05-06 | Infineon Technologies Ag | MTJ patterning using free layer wet etching and lift off techniques |
US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
US8582252B2 (en) * | 2005-11-02 | 2013-11-12 | Seagate Technology Llc | Magnetic layer with grain refining agent |
US7445943B2 (en) * | 2006-10-19 | 2008-11-04 | Everspin Technologies, Inc. | Magnetic tunnel junction memory and method with etch-stop layer |
US7618894B2 (en) * | 2007-07-26 | 2009-11-17 | Unity Semiconductor Corporation | Multi-step selective etching for cross-point memory |
US7880209B2 (en) * | 2008-10-09 | 2011-02-01 | Seagate Technology Llc | MRAM cells including coupled free ferromagnetic layers for stabilization |
KR101527533B1 (ko) * | 2009-01-09 | 2015-06-10 | 삼성전자주식회사 | 자기 메모리 소자의 형성방법 |
JP5058206B2 (ja) * | 2009-04-27 | 2012-10-24 | 株式会社東芝 | 磁気抵抗素子の製造方法 |
JP2011060918A (ja) * | 2009-09-08 | 2011-03-24 | Nippon Hoso Kyokai <Nhk> | スピン注入磁化反転素子、磁気ランダムアクセスメモリ、光変調器、表示装置、ホログラフィ装置、ホログラム記録装置および光変調器の製造方法 |
US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
JP2012099589A (ja) * | 2010-11-01 | 2012-05-24 | Hitachi High-Technologies Corp | プラズマ処理方法 |
US8962493B2 (en) * | 2010-12-13 | 2015-02-24 | Crocus Technology Inc. | Magnetic random access memory cells having improved size and shape characteristics |
US9613825B2 (en) * | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
US8748197B2 (en) * | 2012-03-14 | 2014-06-10 | Headway Technologies, Inc. | Reverse partial etching scheme for magnetic device applications |
US20140003118A1 (en) * | 2012-07-02 | 2014-01-02 | International Business Machines Corporation | Magnetic tunnel junction self-alignment in magnetic domain wall shift register memory devices |
US9343661B2 (en) | 2014-02-18 | 2016-05-17 | Everspin Technologies, Inc. | Non-reactive photoresist removal and spacer layer optimization in a magnetoresistive device |
US9466788B2 (en) * | 2014-02-18 | 2016-10-11 | Everspin Technologies, Inc. | Top electrode etch in a magnetoresistive device and devices manufactured using same |
US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
US10615073B2 (en) * | 2015-02-15 | 2020-04-07 | Acm Research (Shanghai) Inc. | Method for removing barrier layer for minimizing sidewall recess |
US9525125B1 (en) * | 2015-08-20 | 2016-12-20 | International Business Machines Corporation | Linear magnetoresistive random access memory device with a self-aligned contact above MRAM nanowire |
US11043251B2 (en) | 2018-11-30 | 2021-06-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic tunnel junction device and method of forming same |
CN112563412B (zh) * | 2019-09-25 | 2023-06-23 | 浙江驰拓科技有限公司 | 磁性隧道结刻蚀方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1116043B1 (en) * | 1999-07-22 | 2005-07-20 | Koninklijke Philips Electronics N.V. | Method of manufacturing a magnetic tunnel junction device |
JP4809991B2 (ja) * | 2001-04-17 | 2011-11-09 | キヤノン株式会社 | トンネル磁気抵抗素子の加工方法 |
US6682943B2 (en) | 2001-04-27 | 2004-01-27 | Micron Technology, Inc. | Method for forming minimally spaced MRAM structures |
JP2003078185A (ja) * | 2001-09-03 | 2003-03-14 | Nec Corp | 強磁性トンネル接合構造及びその製造方法並びに該強磁性トンネル接合を用いた磁気メモリ |
JP3854839B2 (ja) * | 2001-10-02 | 2006-12-06 | キヤノン株式会社 | 磁気抵抗素子を用いた不揮発固体メモリ |
US6815248B2 (en) | 2002-04-18 | 2004-11-09 | Infineon Technologies Ag | Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing |
JP2003324187A (ja) * | 2002-05-01 | 2003-11-14 | Sony Corp | 磁気メモリ装置の製造方法および磁気メモリ装置 |
JP2004128229A (ja) * | 2002-10-02 | 2004-04-22 | Nec Corp | 磁性メモリ及びその製造方法 |
JP2004214459A (ja) * | 2003-01-06 | 2004-07-29 | Sony Corp | 不揮発性磁気メモリ装置及びその製造方法 |
US6984529B2 (en) * | 2003-09-10 | 2006-01-10 | Infineon Technologies Ag | Fabrication process for a magnetic tunnel junction device |
-
2004
- 2004-09-09 US US10/937,660 patent/US7169623B2/en not_active Expired - Lifetime
-
2005
- 2005-09-09 JP JP2007531406A patent/JP5261629B2/ja active Active
- 2005-09-09 WO PCT/US2005/032303 patent/WO2006029374A2/en active Application Filing
-
2006
- 2006-04-20 US US11/407,524 patent/US20060186496A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060051881A1 (en) | 2006-03-09 |
JP2008512875A (ja) | 2008-04-24 |
WO2006029374A3 (en) | 2006-11-09 |
US7169623B2 (en) | 2007-01-30 |
US20060186496A1 (en) | 2006-08-24 |
WO2006029374A2 (en) | 2006-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5261629B2 (ja) | ストップ−オン−アルミニウム処理を含むウェーハ処理のためのシステム及び方法 | |
US7645618B2 (en) | Dry etch stop process for eliminating electrical shorting in MRAM device structures | |
US7955870B2 (en) | Dry etch stop process for eliminating electrical shorting in MRAM device structures | |
US10043851B1 (en) | Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching | |
TWI737607B (zh) | 圖案化磁性通道接面的硬遮罩 | |
US6759263B2 (en) | Method of patterning a layer of magnetic material | |
US6984585B2 (en) | Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer | |
US7291506B2 (en) | Magnetic memory device and method of manufacturing the same | |
US7320942B2 (en) | Method for removal of metallic residue after plasma etching of a metal layer | |
US11088320B2 (en) | Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices | |
KR20200008146A (ko) | 자기 터널 접합부 패터닝을 위한 조합된 물리적 및 화학적 에칭 | |
US7105361B2 (en) | Method of etching a magnetic material | |
US10921707B2 (en) | Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformity | |
JP5085637B2 (ja) | Mramデバイス構造内の電気的短絡を排除するドライエッチング停止処理 | |
JP2004349687A (ja) | 抗磁ランダムアクセスメモリ(mram)装置の製造方法 | |
US20200266340A1 (en) | Integrated circuit | |
US20200052196A1 (en) | Avoiding Oxygen Plasma Damage During Hard Mask Etching in Magnetic Tunnel Junction (MTJ) Fabrication Process | |
TWI499103B (zh) | 磁電阻式隨機存取記憶體裝置及其製造方法 | |
KR102399361B1 (ko) | 20 nm 이하 mram 디바이스들을 제조하기 위한 다수의 하드 마스크 패터닝 | |
US20030181056A1 (en) | Method of etching a magnetic material film stack using a hard mask | |
CN101449361A (zh) | 消除磁性随机存取存储器器件结构中的电短路的干法蚀刻停止工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080828 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110711 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111011 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111018 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120111 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121106 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121203 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20121228 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130322 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5261629 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |