JP4326734B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4326734B2
JP4326734B2 JP2001351808A JP2001351808A JP4326734B2 JP 4326734 B2 JP4326734 B2 JP 4326734B2 JP 2001351808 A JP2001351808 A JP 2001351808A JP 2001351808 A JP2001351808 A JP 2001351808A JP 4326734 B2 JP4326734 B2 JP 4326734B2
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Japan
Prior art keywords
film
semiconductor film
insulating film
forming
heat treatment
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Expired - Fee Related
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JP2001351808A
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Japanese (ja)
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JP2003151905A (ja
JP2003151905A5 (enExample
Inventor
慎志 前川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2003151905A5 publication Critical patent/JP2003151905A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001351808A 2001-11-16 2001-11-16 半導体装置の作製方法 Expired - Fee Related JP4326734B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001351808A JP4326734B2 (ja) 2001-11-16 2001-11-16 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001351808A JP4326734B2 (ja) 2001-11-16 2001-11-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003151905A JP2003151905A (ja) 2003-05-23
JP2003151905A5 JP2003151905A5 (enExample) 2005-08-04
JP4326734B2 true JP4326734B2 (ja) 2009-09-09

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JP2001351808A Expired - Fee Related JP4326734B2 (ja) 2001-11-16 2001-11-16 半導体装置の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7588970B2 (en) * 2005-06-10 2009-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20130140573A1 (en) * 2010-06-07 2013-06-06 Yoshinobu Nakamura Manufacturing method for crystalline semiconductor film, semiconductor device, and display device
JP6312134B2 (ja) * 2014-07-15 2018-04-18 独立行政法人国立高等専門学校機構 ゲルマニウム層付き基板の製造方法及びゲルマニウム層付き基板

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JP2003151905A (ja) 2003-05-23

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