JP2005526377A - 金属含有材料及びキャパシタ電極形成方法並びにキャパシタ構造 - Google Patents
金属含有材料及びキャパシタ電極形成方法並びにキャパシタ構造 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 69
- 239000002184 metal Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000003990 capacitor Substances 0.000 title claims abstract description 51
- 239000000463 material Substances 0.000 title claims description 25
- 239000002243 precursor Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000004020 conductor Substances 0.000 claims description 26
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 26
- 239000003989 dielectric material Substances 0.000 claims description 20
- 125000002524 organometallic group Chemical group 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 13
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 229910052707 ruthenium Inorganic materials 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052703 rhodium Inorganic materials 0.000 claims description 8
- 239000010948 rhodium Substances 0.000 claims description 8
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 5
- 238000009429 electrical wiring Methods 0.000 claims 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Chemical Vapour Deposition (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
Claims (34)
- 半導体構造のための金属含有マスの形成方法であって、該方法は、
半導体基板を設ける過程と、
前記基板の近傍に、白金を含まない1つ又はそれ以上の有機金属前駆体の少なくとも1つを設ける過程と、
前記1つ又はそれ以上の前駆体から金属を放出するために、前記1つ又はそれ以上の前駆体を還元性雰囲気に晒す過程と、
前記半導体基板上に金属含有マスを形成するために、半導体基板上に前記放出された金属を堆積する過程であって、前記基板は、TiN、Ti元素、WN、W元素、TaN及びTa元素の1つ又はそれ以上で構成される上部表面を有し、該上部表面は、金属含有マスの形成中に還元性雰囲気に晒される、堆積する過程と、
金属含有マスを長方形のブロック状にパターンニングする過程と、
を具備する金属含有マスの形成方法。 - 前記金属含有マスは、前記基板の上部表面に物理的に接して形成される請求項1に記載の方法。
- 前記上部表面は、TiNで構成される請求項1に記載の方法。
- 前記上部表面は、Ti元素で構成される請求項1に記載の方法。
- 前記上部表面は、WNで構成される請求項1に記載の方法。
- 前記上部表面は、W元素で構成される請求項1に記載の方法。
- 前記上部表面は、TaNで構成される請求項1に記載の方法。
- 前記上部表面は、Ta元素で構成される請求項1に記載の方法。
- 前記還元性雰囲気は、NH3からなる請求項1に記載の方法。
- 前記還元性雰囲気は、プラズマ活性水素からなる請求項1に記載の方法。
- 前記還元性雰囲気は、H2からなる請求項1に記載の方法。
- キャパシタの形成方法であって、該方法は、
それにより支持される電気ノードを有する半導体基板を設ける過程と、
前記ノードに電気的に接触する、導電性ドープシリコンからなる電気配線を形成する過程と、
1つ又はそれ以上のTiN、WN、TaN、Ta元素、Ti元素、及びW元素からなる導電性材料を、前記電気配線上に形成する過程と、
ルテニウム、ロジウム、イリジウム、コバルト、パラジウム、白金、又はニッケルの1つ又はそれ以上を含む有機金属前駆体を、前記導電性材料の近傍に設ける過程と、
金属を前記前駆体から放出するために前駆体を還元性雰囲気に晒す過程であって、放出された金属は、ルテニウム、ロジウム、イリジウム、コバルト、パラジウム、白金、又はニッケルの1つ又はそれ以上で主に構成される、前駆体を還元性雰囲気に晒す過程と、
第1キャパシタ電極を形成するために、前記導電性材料上に前記放出された金属を堆積する過程と、
前記第1キャパシタ電極上に誘電体材料を形成する過程と、
前記誘電体材料上に第2キャパシタ電極を形成する過程であって、前記第2キャパシタ電極は金属を含み、前記第2キャパシタ電極を形成する過程は、金属含有前駆体を酸化雰囲気に晒す過程を含む、第2キャパシタ電極を形成する過程と、
を具備するキャパシタの形成方法。 - 前記前駆体はルテニウムからなり、前記放出された金属は、ルテニウムで主に構成される請求項12に記載の方法。
- 前記前駆体はロジウムからなり、前記放出された金属は、ロジウムで主に構成される請求項12に記載の方法。
- 前記前駆体はイリジウムからなり、前記放出された金属は、イリジウムで主に構成される請求項12に記載の方法。
- 前記前駆体はコバルトからなり、前記放出された金属は、コバルトで主に構成される請求項12に記載の方法。
- 前記前駆体はパラジウムからなり、前記放出された金属は、パラジウムで主に構成される請求項12に記載の方法。
- 前記前駆体は白金からなり、前記放出された金属は、白金で主に構成される請求項12に記載の方法。
- 前記前駆体はニッケルからなり、前記放出された金属は、ニッケルで主に構成される請求項12に記載の方法。
- 前記前駆体はトリカルボニルシクロヘキサジエンルテニウムを含む請求項12に記載の方法。
- 前記還元性雰囲気はNH3を含む請求項12に記載の方法。
- 前記還元性雰囲気はプラズマ活性水素を含む請求項12に記載の方法。
- 前記還元性雰囲気はH2を含む請求項12に記載の方法。
- キャパシタの形成方法であって、該方法は、
それにより支持される電気ノードを有する半導体基板を設ける過程と、
前記ノードに電気的に接触する、導電性ドープシリコンからなる電気配線を形成する過程と、
TiN、WN、TaN、Ta元素、Ti元素、及びW元素の1つ又はそれ以上を含む導電性材料を、前記電気配線上に形成する過程と、
前記導電性材料の近傍に有機金属前駆体を設ける過程と、
前記前駆体から金属を放出するために、前記前駆体を還元性雰囲気に晒す過程と、
第1キャパシタ電極を形成するために、前記導電性材料上に前記放出された金属を堆積する過程と、
前記第1キャパシタ電極上に誘電体材料を形成する過程と、
前記誘電体材料上に第2キャパシタ電極を形成する過程であって、前記第2キャパシタ電極は金属を含み、前記誘電体材料は酸素を含み、前記第2キャパシタ電極を形成する過程は、金属含有前駆体を酸化雰囲気に晒す過程を含む、第2キャパシタ電極を形成する過程と、
を具備するキャパシタの形成方法。 - 前記誘電体材料は、Ta2O5を含み、前記第2キャパシタ電極を形成する過程は、金属含有前駆体をN2O、O2又はO3の1つ又はそれ以上に晒す過程からなる請求項24に記載の方法。
- 前記導電性材料は、TiNで構成され、前記放出されて堆積された金属は、前記導電性材料に物理的に接触している請求項24に記載の方法。
- 前記導電性材料は、Ti元素で構成され、前記放出されて堆積された金属は、前記導電性材料に物理的に接触している請求項24に記載の方法。
- 前記導電性材料は、WNで構成され、前記放出されて堆積された金属は、前記導電性材料に物理的に接触している請求項24に記載の方法。
- 前記導電性材料は、W元素で構成され、前記放出されて堆積された金属は、前記導電性材料に物理的に接触している請求項24に記載の方法。
- 前記導電性材料は、TaNで構成され、前記放出されて堆積された金属は、前記導電性材料に物理的に接触している請求項24に記載の方法。
- 前記導電性材料は、Ta元素で構成され、前記放出されて堆積された金属は、前記導電性材料に物理的に接触している請求項24に記載の方法。
- 前記誘電体材料は、高誘電体材料からなる請求項24に記載の方法。
- 前記誘電体材料は、Ta2O5からなる請求項24に記載の方法。
- キャパシタの形成方法であって、該方法は、
導電性材料を支持する半導体基板を設ける過程と、
前記導電性材料の近傍に有機金属前駆体を設ける過程と、
前記前駆体から金属を放出するために、前記前駆体を還元性雰囲気に晒す過程と、
第1キャパシタ電極を形成するために、前記導電性材料上に放出された材料を堆積する過程と、
前記第1キャパシタ電極上に誘電体材料を形成する過程と、
前記誘電体材料上に第2キャパシタ電極を形成する過程と、を具備し、
前記第2キャパシタ電極は金属を含み、前記誘電体材料は酸素を含み、前記第2キャパシタ電極を形成する過程は、金属含有前駆体を酸化雰囲気に晒す過程を含むキャパシタの形成方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/932,236 US20030036242A1 (en) | 2001-08-16 | 2001-08-16 | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions |
PCT/US2002/026191 WO2003017341A2 (en) | 2001-08-16 | 2002-08-15 | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions |
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JP2005526377A true JP2005526377A (ja) | 2005-09-02 |
JP2005526377A5 JP2005526377A5 (ja) | 2005-10-27 |
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JP2003522151A Pending JP2005526377A (ja) | 2001-08-16 | 2002-08-15 | 金属含有材料及びキャパシタ電極形成方法並びにキャパシタ構造 |
Country Status (11)
Country | Link |
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US (5) | US20030036242A1 (ja) |
EP (1) | EP1417701B1 (ja) |
JP (1) | JP2005526377A (ja) |
KR (2) | KR100627503B1 (ja) |
CN (1) | CN100521086C (ja) |
AT (1) | ATE360260T1 (ja) |
AU (1) | AU2002327474A1 (ja) |
DE (1) | DE60219635T2 (ja) |
SG (1) | SG146440A1 (ja) |
TW (1) | TW559982B (ja) |
WO (1) | WO2003017341A2 (ja) |
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KR100390849B1 (ko) * | 2001-06-30 | 2003-07-12 | 주식회사 하이닉스반도체 | 하프늄산화막을 구비하는 캐패시터의 제조 방법 |
KR100408726B1 (ko) * | 2001-12-10 | 2003-12-11 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
JP2005314713A (ja) * | 2004-04-27 | 2005-11-10 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | ルテニウム膜またはルテニウム酸化物膜の製造方法 |
KR100587686B1 (ko) * | 2004-07-15 | 2006-06-08 | 삼성전자주식회사 | 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법 |
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2002
- 2002-05-07 US US10/140,608 patent/US20030036210A1/en not_active Abandoned
- 2002-08-15 AU AU2002327474A patent/AU2002327474A1/en not_active Abandoned
- 2002-08-15 CN CNB028160576A patent/CN100521086C/zh not_active Expired - Fee Related
- 2002-08-15 KR KR1020047002076A patent/KR100627503B1/ko not_active IP Right Cessation
- 2002-08-15 WO PCT/US2002/026191 patent/WO2003017341A2/en active IP Right Grant
- 2002-08-15 KR KR1020067006025A patent/KR100632614B1/ko not_active IP Right Cessation
- 2002-08-15 JP JP2003522151A patent/JP2005526377A/ja active Pending
- 2002-08-15 DE DE60219635T patent/DE60219635T2/de not_active Expired - Lifetime
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- 2002-08-15 EP EP02763466A patent/EP1417701B1/en not_active Expired - Lifetime
- 2002-08-15 AT AT02763466T patent/ATE360260T1/de not_active IP Right Cessation
- 2002-08-16 TW TW091118530A patent/TW559982B/zh not_active IP Right Cessation
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- 2004-02-12 US US10/778,795 patent/US6924195B2/en not_active Expired - Fee Related
- 2004-08-31 US US10/931,559 patent/US7354842B2/en not_active Expired - Fee Related
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US20030036210A1 (en) | 2003-02-20 |
US6924195B2 (en) | 2005-08-02 |
AU2002327474A1 (en) | 2003-03-03 |
TW559982B (en) | 2003-11-01 |
US20060040414A1 (en) | 2006-02-23 |
ATE360260T1 (de) | 2007-05-15 |
DE60219635T2 (de) | 2007-12-20 |
US7354842B2 (en) | 2008-04-08 |
US20040161892A1 (en) | 2004-08-19 |
SG146440A1 (en) | 2008-10-30 |
CN100521086C (zh) | 2009-07-29 |
KR100627503B1 (ko) | 2006-09-21 |
US20050032366A1 (en) | 2005-02-10 |
EP1417701A2 (en) | 2004-05-12 |
KR100632614B1 (ko) | 2006-10-09 |
KR20060031708A (ko) | 2006-04-12 |
KR20040030959A (ko) | 2004-04-09 |
WO2003017341B1 (en) | 2004-04-15 |
EP1417701B1 (en) | 2007-04-18 |
CN1543665A (zh) | 2004-11-03 |
WO2003017341A3 (en) | 2004-02-19 |
WO2003017341A2 (en) | 2003-02-27 |
US20030036242A1 (en) | 2003-02-20 |
DE60219635D1 (de) | 2007-05-31 |
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