JP2006093678A5 - - Google Patents
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- Publication number
- JP2006093678A5 JP2006093678A5 JP2005241709A JP2005241709A JP2006093678A5 JP 2006093678 A5 JP2006093678 A5 JP 2006093678A5 JP 2005241709 A JP2005241709 A JP 2005241709A JP 2005241709 A JP2005241709 A JP 2005241709A JP 2006093678 A5 JP2006093678 A5 JP 2006093678A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- forming
- type impurity
- impurity region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims 32
- 239000004065 semiconductor Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- 238000005530 etching Methods 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 239000011733 molybdenum Substances 0.000 claims 3
- 238000000926 separation method Methods 0.000 claims 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 3
- 229910052721 tungsten Inorganic materials 0.000 claims 3
- 239000010937 tungsten Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- -1 halogen fluoride Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005241709A JP4912641B2 (ja) | 2004-08-23 | 2005-08-23 | 無線チップの作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004242994 | 2004-08-23 | ||
| JP2004242994 | 2004-08-23 | ||
| JP2005241709A JP4912641B2 (ja) | 2004-08-23 | 2005-08-23 | 無線チップの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006093678A JP2006093678A (ja) | 2006-04-06 |
| JP2006093678A5 true JP2006093678A5 (enExample) | 2008-07-10 |
| JP4912641B2 JP4912641B2 (ja) | 2012-04-11 |
Family
ID=36234303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005241709A Expired - Fee Related JP4912641B2 (ja) | 2004-08-23 | 2005-08-23 | 無線チップの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4912641B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101523611B (zh) | 2006-10-04 | 2012-07-04 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| JP5296360B2 (ja) * | 2006-10-04 | 2013-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1988575A3 (en) * | 2007-03-26 | 2008-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7750852B2 (en) * | 2007-04-13 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2010232362A (ja) * | 2009-03-26 | 2010-10-14 | Oki Semiconductor Co Ltd | 半導体素子およびその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4197270B2 (ja) * | 1994-04-29 | 2008-12-17 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
| JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2001237260A (ja) * | 2000-02-22 | 2001-08-31 | Hitachi Ltd | 半導体装置 |
| EP1455394B1 (en) * | 2001-07-24 | 2018-04-11 | Samsung Electronics Co., Ltd. | Transfer method |
| JP4393859B2 (ja) * | 2002-12-27 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 記録媒体の作製方法 |
| JP4637477B2 (ja) * | 2002-12-27 | 2011-02-23 | 株式会社半導体エネルギー研究所 | 剥離方法 |
-
2005
- 2005-08-23 JP JP2005241709A patent/JP4912641B2/ja not_active Expired - Fee Related
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