JP2004047514A5 - - Google Patents
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- Publication number
- JP2004047514A5 JP2004047514A5 JP2002199175A JP2002199175A JP2004047514A5 JP 2004047514 A5 JP2004047514 A5 JP 2004047514A5 JP 2002199175 A JP2002199175 A JP 2002199175A JP 2002199175 A JP2002199175 A JP 2002199175A JP 2004047514 A5 JP2004047514 A5 JP 2004047514A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- oxide film
- semiconductor device
- manufacturing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 42
- 229910052710 silicon Inorganic materials 0.000 claims 42
- 239000010703 silicon Substances 0.000 claims 42
- 239000004065 semiconductor Substances 0.000 claims 40
- 238000004519 manufacturing process Methods 0.000 claims 29
- 238000000034 method Methods 0.000 claims 23
- 239000002184 metal Substances 0.000 claims 12
- 229910052751 metal Inorganic materials 0.000 claims 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 11
- 238000009832 plasma treatment Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 6
- 230000000737 periodic effect Effects 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000009751 slip forming Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002199175A JP4439792B2 (ja) | 2002-07-08 | 2002-07-08 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002199175A JP4439792B2 (ja) | 2002-07-08 | 2002-07-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004047514A JP2004047514A (ja) | 2004-02-12 |
| JP2004047514A5 true JP2004047514A5 (enExample) | 2005-10-13 |
| JP4439792B2 JP4439792B2 (ja) | 2010-03-24 |
Family
ID=31706424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002199175A Expired - Fee Related JP4439792B2 (ja) | 2002-07-08 | 2002-07-08 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4439792B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4574261B2 (ja) * | 2004-07-16 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5235051B2 (ja) * | 2005-08-31 | 2013-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2002
- 2002-07-08 JP JP2002199175A patent/JP4439792B2/ja not_active Expired - Fee Related
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