JP4439792B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4439792B2
JP4439792B2 JP2002199175A JP2002199175A JP4439792B2 JP 4439792 B2 JP4439792 B2 JP 4439792B2 JP 2002199175 A JP2002199175 A JP 2002199175A JP 2002199175 A JP2002199175 A JP 2002199175A JP 4439792 B2 JP4439792 B2 JP 4439792B2
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Japan
Prior art keywords
film
silicon film
oxide film
manufacturing
semiconductor device
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Expired - Fee Related
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JP2002199175A
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English (en)
Japanese (ja)
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JP2004047514A (ja
JP2004047514A5 (enExample
Inventor
美佐子 仲沢
直樹 牧田
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Priority to JP2002199175A priority Critical patent/JP4439792B2/ja
Publication of JP2004047514A publication Critical patent/JP2004047514A/ja
Publication of JP2004047514A5 publication Critical patent/JP2004047514A5/ja
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Publication of JP4439792B2 publication Critical patent/JP4439792B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Recrystallisation Techniques (AREA)
JP2002199175A 2002-07-08 2002-07-08 半導体装置の作製方法 Expired - Fee Related JP4439792B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002199175A JP4439792B2 (ja) 2002-07-08 2002-07-08 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002199175A JP4439792B2 (ja) 2002-07-08 2002-07-08 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2004047514A JP2004047514A (ja) 2004-02-12
JP2004047514A5 JP2004047514A5 (enExample) 2005-10-13
JP4439792B2 true JP4439792B2 (ja) 2010-03-24

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JP2002199175A Expired - Fee Related JP4439792B2 (ja) 2002-07-08 2002-07-08 半導体装置の作製方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4574261B2 (ja) * 2004-07-16 2010-11-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5235051B2 (ja) * 2005-08-31 2013-07-10 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2004047514A (ja) 2004-02-12

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