JP2002313757A5 - - Google Patents

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Publication number
JP2002313757A5
JP2002313757A5 JP2001118413A JP2001118413A JP2002313757A5 JP 2002313757 A5 JP2002313757 A5 JP 2002313757A5 JP 2001118413 A JP2001118413 A JP 2001118413A JP 2001118413 A JP2001118413 A JP 2001118413A JP 2002313757 A5 JP2002313757 A5 JP 2002313757A5
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor wafer
polishing
semiconductor
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001118413A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002313757A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001118413A priority Critical patent/JP2002313757A/ja
Priority claimed from JP2001118413A external-priority patent/JP2002313757A/ja
Priority to TW091103286A priority patent/TW567550B/zh
Priority to US10/085,063 priority patent/US6979649B2/en
Priority to KR1020020011898A priority patent/KR100873759B1/ko
Publication of JP2002313757A publication Critical patent/JP2002313757A/ja
Priority to US11/167,253 priority patent/US7250365B2/en
Publication of JP2002313757A5 publication Critical patent/JP2002313757A5/ja
Priority to US11/778,494 priority patent/US7718526B2/en
Priority to US12/781,816 priority patent/US7977234B2/en
Pending legal-status Critical Current

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JP2001118413A 2001-04-17 2001-04-17 半導体集積回路装置の製造方法 Pending JP2002313757A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001118413A JP2002313757A (ja) 2001-04-17 2001-04-17 半導体集積回路装置の製造方法
TW091103286A TW567550B (en) 2001-04-17 2002-02-25 Method of manufacturing semiconductor integrated circuit device
US10/085,063 US6979649B2 (en) 2001-04-17 2002-03-01 Fabrication method of semiconductor integrated circuit device
KR1020020011898A KR100873759B1 (ko) 2001-04-17 2002-03-06 반도체 집적 회로 장치의 제조 방법
US11/167,253 US7250365B2 (en) 2001-04-17 2005-06-28 Fabrication method of semiconductor integrated circuit device
US11/778,494 US7718526B2 (en) 2001-04-17 2007-07-16 Fabrication method of semiconductor integrated circuit device
US12/781,816 US7977234B2 (en) 2001-04-17 2010-05-18 Fabrication method of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001118413A JP2002313757A (ja) 2001-04-17 2001-04-17 半導体集積回路装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007179460A Division JP4966116B2 (ja) 2007-07-09 2007-07-09 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002313757A JP2002313757A (ja) 2002-10-25
JP2002313757A5 true JP2002313757A5 (enExample) 2005-07-21

Family

ID=18968809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001118413A Pending JP2002313757A (ja) 2001-04-17 2001-04-17 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (4) US6979649B2 (enExample)
JP (1) JP2002313757A (enExample)
KR (1) KR100873759B1 (enExample)
TW (1) TW567550B (enExample)

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JP5125743B2 (ja) * 2008-05-09 2013-01-23 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5083252B2 (ja) * 2009-03-13 2012-11-28 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5571409B2 (ja) 2010-02-22 2014-08-13 株式会社荏原製作所 半導体装置の製造方法
JP2012216812A (ja) * 2011-03-31 2012-11-08 Elpida Memory Inc 半導体装置及びその製造方法
US8629037B2 (en) * 2011-09-24 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process
JP6130995B2 (ja) * 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
KR20130128227A (ko) * 2012-05-16 2013-11-26 삼성전자주식회사 전자소자 탑재용 기판의 제조방법
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US9287127B2 (en) 2014-02-17 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer back-side polishing system and method for integrated circuit device manufacturing processes
JP6304445B2 (ja) * 2015-03-16 2018-04-04 富士電機株式会社 半導体装置の製造方法
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