JP2004282035A5 - - Google Patents

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Publication number
JP2004282035A5
JP2004282035A5 JP2004026534A JP2004026534A JP2004282035A5 JP 2004282035 A5 JP2004282035 A5 JP 2004282035A5 JP 2004026534 A JP2004026534 A JP 2004026534A JP 2004026534 A JP2004026534 A JP 2004026534A JP 2004282035 A5 JP2004282035 A5 JP 2004282035A5
Authority
JP
Japan
Prior art keywords
semiconductor wafer
semiconductor
manufacturing
wet etching
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004026534A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004282035A (ja
JP4544876B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004026534A external-priority patent/JP4544876B2/ja
Priority to JP2004026534A priority Critical patent/JP4544876B2/ja
Priority to TW093104415A priority patent/TWI233669B/zh
Priority to US10/784,888 priority patent/US7371693B2/en
Priority to KR1020040012208A priority patent/KR100661042B1/ko
Priority to EP04004219A priority patent/EP1453090A3/en
Priority to CNB200410006626XA priority patent/CN100355036C/zh
Publication of JP2004282035A publication Critical patent/JP2004282035A/ja
Publication of JP2004282035A5 publication Critical patent/JP2004282035A5/ja
Priority to US12/051,502 priority patent/US7981807B2/en
Publication of JP4544876B2 publication Critical patent/JP4544876B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004026534A 2003-02-25 2004-02-03 半導体装置の製造方法 Expired - Fee Related JP4544876B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004026534A JP4544876B2 (ja) 2003-02-25 2004-02-03 半導体装置の製造方法
TW093104415A TWI233669B (en) 2003-02-25 2004-02-23 Method for making a semiconductor device
US10/784,888 US7371693B2 (en) 2003-02-25 2004-02-24 Manufacturing method of semiconductor device with chamfering
KR1020040012208A KR100661042B1 (ko) 2003-02-25 2004-02-24 반도체 장치의 제조 방법
EP04004219A EP1453090A3 (en) 2003-02-25 2004-02-25 Manufacturing method of semiconductor device
CNB200410006626XA CN100355036C (zh) 2003-02-25 2004-02-25 半导体装置的制造方法
US12/051,502 US7981807B2 (en) 2003-02-25 2008-03-19 Manufacturing method of semiconductor device with smoothing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003046755 2003-02-25
JP2004026534A JP4544876B2 (ja) 2003-02-25 2004-02-03 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004282035A JP2004282035A (ja) 2004-10-07
JP2004282035A5 true JP2004282035A5 (enExample) 2007-03-15
JP4544876B2 JP4544876B2 (ja) 2010-09-15

Family

ID=32775226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004026534A Expired - Fee Related JP4544876B2 (ja) 2003-02-25 2004-02-03 半導体装置の製造方法

Country Status (6)

Country Link
US (2) US7371693B2 (enExample)
EP (1) EP1453090A3 (enExample)
JP (1) JP4544876B2 (enExample)
KR (1) KR100661042B1 (enExample)
CN (1) CN100355036C (enExample)
TW (1) TWI233669B (enExample)

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JP2009099838A (ja) * 2007-10-18 2009-05-07 Nec Electronics Corp 半導体装置およびその製造方法
GB2459301B (en) * 2008-04-18 2011-09-14 Xsil Technology Ltd A method of dicing wafers to give high die strength
US8710665B2 (en) * 2008-10-06 2014-04-29 Infineon Technologies Ag Electronic component, a semiconductor wafer and a method for producing an electronic component
JP2010103300A (ja) * 2008-10-23 2010-05-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5638605B2 (ja) 2009-06-25 2014-12-10 アイメックＩｍｅｃ 生体適合性パッケージング
US8212340B2 (en) * 2009-07-13 2012-07-03 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
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JP6265594B2 (ja) 2012-12-21 2018-01-24 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
KR101440308B1 (ko) * 2013-02-21 2014-09-18 옵토팩 주식회사 반도체 장치 및 그 제조 방법
US11114402B2 (en) * 2018-02-23 2021-09-07 Semiconductor Components Industries, Llc Semiconductor device with backmetal and related methods
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JP7056685B2 (ja) * 2020-05-27 2022-04-19 信越半導体株式会社 シリコンウェーハのエッチング方法
CN112053936B (zh) * 2020-09-22 2024-06-11 粤芯半导体技术股份有限公司 晶圆背面粗糙化控制方法以及功率器件制造方法

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