JP2009111367A5 - - Google Patents

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Publication number
JP2009111367A5
JP2009111367A5 JP2008258309A JP2008258309A JP2009111367A5 JP 2009111367 A5 JP2009111367 A5 JP 2009111367A5 JP 2008258309 A JP2008258309 A JP 2008258309A JP 2008258309 A JP2008258309 A JP 2008258309A JP 2009111367 A5 JP2009111367 A5 JP 2009111367A5
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JP
Japan
Prior art keywords
silicon substrate
hole
thermal oxide
forming
oxide film
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Application number
JP2008258309A
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English (en)
Japanese (ja)
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JP2009111367A (ja
JP5536322B2 (ja
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Priority to JP2008258309A priority Critical patent/JP5536322B2/ja
Priority claimed from JP2008258309A external-priority patent/JP5536322B2/ja
Publication of JP2009111367A publication Critical patent/JP2009111367A/ja
Publication of JP2009111367A5 publication Critical patent/JP2009111367A5/ja
Application granted granted Critical
Publication of JP5536322B2 publication Critical patent/JP5536322B2/ja
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JP2008258309A 2007-10-09 2008-10-03 基板の製造方法 Active JP5536322B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008258309A JP5536322B2 (ja) 2007-10-09 2008-10-03 基板の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007263224 2007-10-09
JP2007263224 2007-10-09
JP2008258309A JP5536322B2 (ja) 2007-10-09 2008-10-03 基板の製造方法

Publications (3)

Publication Number Publication Date
JP2009111367A JP2009111367A (ja) 2009-05-21
JP2009111367A5 true JP2009111367A5 (enExample) 2011-08-11
JP5536322B2 JP5536322B2 (ja) 2014-07-02

Family

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Family Applications (1)

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JP2008258309A Active JP5536322B2 (ja) 2007-10-09 2008-10-03 基板の製造方法

Country Status (5)

Country Link
US (1) US7795140B2 (enExample)
EP (1) EP2048923A3 (enExample)
JP (1) JP5536322B2 (enExample)
KR (1) KR20090036521A (enExample)
TW (1) TW200919606A (enExample)

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DE102010029760B4 (de) * 2010-06-07 2019-02-21 Robert Bosch Gmbh Bauelement mit einer Durchkontaktierung und Verfahren zu seiner Herstellung
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
TWI446420B (zh) 2010-08-27 2014-07-21 Advanced Semiconductor Eng 用於半導體製程之載體分離方法
TWI445152B (zh) 2010-08-30 2014-07-11 日月光半導體製造股份有限公司 半導體結構及其製作方法
US9007273B2 (en) 2010-09-09 2015-04-14 Advances Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
TWI434387B (zh) 2010-10-11 2014-04-11 日月光半導體製造股份有限公司 具有穿導孔之半導體裝置及具有穿導孔之半導體裝置之封裝結構及其製造方法
TW201241941A (en) * 2010-10-21 2012-10-16 Sumitomo Bakelite Co A method for manufacturing an electronic equipment, and the electronic equipment obtained by using the method, as well as a method for manufacturing electronics and electronic parts, and the electronics and the electronic parts obtained using the method
TWI527174B (zh) 2010-11-19 2016-03-21 日月光半導體製造股份有限公司 具有半導體元件之封裝結構
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8736066B2 (en) * 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
TWI445155B (zh) 2011-01-06 2014-07-11 日月光半導體製造股份有限公司 堆疊式封裝結構及其製造方法
US8853819B2 (en) 2011-01-07 2014-10-07 Advanced Semiconductor Engineering, Inc. Semiconductor structure with passive element network and manufacturing method thereof
KR101767654B1 (ko) 2011-05-19 2017-08-14 삼성전자주식회사 에어 갭 절연 구조를 갖는 관통전극을 구비한 반도체 소자 및 그 제조방법
KR101867998B1 (ko) * 2011-06-14 2018-06-15 삼성전자주식회사 패턴 형성 방법
US8541883B2 (en) 2011-11-29 2013-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor device having shielded conductive vias
US8742591B2 (en) 2011-12-21 2014-06-03 Stats Chippac, Ltd. Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress relief
US8975157B2 (en) 2012-02-08 2015-03-10 Advanced Semiconductor Engineering, Inc. Carrier bonding and detaching processes for a semiconductor wafer
US8963316B2 (en) 2012-02-15 2015-02-24 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US8786060B2 (en) 2012-05-04 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US9153542B2 (en) 2012-08-01 2015-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor package having an antenna and manufacturing method thereof
US8937387B2 (en) 2012-11-07 2015-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor device with conductive vias
US9159699B2 (en) * 2012-11-13 2015-10-13 Delta Electronics, Inc. Interconnection structure having a via structure
US8952542B2 (en) 2012-11-14 2015-02-10 Advanced Semiconductor Engineering, Inc. Method for dicing a semiconductor wafer having through silicon vias and resultant structures
CN103839870B (zh) * 2012-11-20 2016-08-17 中微半导体设备(上海)有限公司 用于tsv刻蚀中改善硅通孔侧壁粗糙度的方法
US9406552B2 (en) 2012-12-20 2016-08-02 Advanced Semiconductor Engineering, Inc. Semiconductor device having conductive via and manufacturing process
US8841751B2 (en) 2013-01-23 2014-09-23 Advanced Semiconductor Engineering, Inc. Through silicon vias for semiconductor devices and manufacturing method thereof
US9978688B2 (en) 2013-02-28 2018-05-22 Advanced Semiconductor Engineering, Inc. Semiconductor package having a waveguide antenna and manufacturing method thereof
US9089268B2 (en) 2013-03-13 2015-07-28 Advanced Semiconductor Engineering, Inc. Neural sensing device and method for making the same
US8987734B2 (en) 2013-03-15 2015-03-24 Advanced Semiconductor Engineering, Inc. Semiconductor wafer, semiconductor process and semiconductor package
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JP2015072996A (ja) * 2013-10-02 2015-04-16 新光電気工業株式会社 半導体装置
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JP2008227177A (ja) * 2007-03-13 2008-09-25 Nec Corp インターポーザ、半導体モジュール、及びそれらの製造方法
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