JP2008536296A5 - - Google Patents

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Publication number
JP2008536296A5
JP2008536296A5 JP2008500764A JP2008500764A JP2008536296A5 JP 2008536296 A5 JP2008536296 A5 JP 2008536296A5 JP 2008500764 A JP2008500764 A JP 2008500764A JP 2008500764 A JP2008500764 A JP 2008500764A JP 2008536296 A5 JP2008536296 A5 JP 2008536296A5
Authority
JP
Japan
Prior art keywords
copper layer
plasma
etching
less
degrees celsius
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008500764A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008536296A (ja
Filing date
Publication date
Priority claimed from US11/076,725 external-priority patent/US7540935B2/en
Application filed filed Critical
Publication of JP2008536296A publication Critical patent/JP2008536296A/ja
Publication of JP2008536296A5 publication Critical patent/JP2008536296A5/ja
Pending legal-status Critical Current

Links

JP2008500764A 2005-03-09 2006-02-27 プラズマ酸化および酸化材料の除去 Pending JP2008536296A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/076,725 US7540935B2 (en) 2003-03-14 2005-03-09 Plasma oxidation and removal of oxidized material
PCT/US2006/007401 WO2006098888A2 (en) 2005-03-09 2006-02-27 Plasma oxidation and removal of oxidized material

Publications (2)

Publication Number Publication Date
JP2008536296A JP2008536296A (ja) 2008-09-04
JP2008536296A5 true JP2008536296A5 (enExample) 2009-04-16

Family

ID=36992195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008500764A Pending JP2008536296A (ja) 2005-03-09 2006-02-27 プラズマ酸化および酸化材料の除去

Country Status (6)

Country Link
US (1) US7540935B2 (enExample)
JP (1) JP2008536296A (enExample)
KR (2) KR20070112234A (enExample)
CN (1) CN101164121B (enExample)
TW (1) TWI310587B (enExample)
WO (1) WO2006098888A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100729933B1 (ko) * 2005-12-19 2007-06-18 동부일렉트로닉스 주식회사 구리 시드층의 증착 온도 측정 방법 및 이를 이용한 구리층형성 방법
CN101541438B (zh) * 2006-10-16 2013-08-21 材料及技术公司 使用流体弯液面湿加工的设备及方法
WO2009070216A1 (en) * 2007-11-21 2009-06-04 Lam Research Corporation Bevel plasma treatment to enhance wet edge clean
US8414790B2 (en) * 2008-11-13 2013-04-09 Lam Research Corporation Bevel plasma treatment to enhance wet edge clean
US20120088370A1 (en) * 2010-10-06 2012-04-12 Lam Research Corporation Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods
CN105225976A (zh) * 2014-06-25 2016-01-06 中芯国际集成电路制造(上海)有限公司 焊盘的制作方法及半导体器件
EP3311398A4 (en) * 2015-06-17 2019-02-20 INTEL Corporation TRANSITION METAL DRYING BY ATOMIC LAYER REMOVAL OF OXIDE LAYERS FOR THE MANUFACTURE OF COMPONENTS
CN112382608A (zh) * 2020-11-04 2021-02-19 上海华力集成电路制造有限公司 铜互连线的制造方法
US11557487B2 (en) * 2021-06-04 2023-01-17 Tokyo Electron Limited Etching metal during processing of a semiconductor structure
WO2025004295A1 (ja) * 2023-06-29 2025-01-02 株式会社Kokusai Electric 処理方法、処理装置、半導体装置の製造方法及びプログラム

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US4919750A (en) * 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US5098516A (en) * 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
JP2885616B2 (ja) * 1992-07-31 1999-04-26 株式会社東芝 半導体装置およびその製造方法
US5561082A (en) * 1992-07-31 1996-10-01 Kabushiki Kaisha Toshiba Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide
US5431774A (en) * 1993-11-30 1995-07-11 Texas Instruments Incorporated Copper etching
US6090701A (en) * 1994-06-21 2000-07-18 Kabushiki Kaisha Toshiba Method for production of semiconductor device
US5736002A (en) * 1994-08-22 1998-04-07 Sharp Microelectronics Technology, Inc. Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same
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US6171661B1 (en) * 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
JP4307592B2 (ja) * 1998-07-07 2009-08-05 Ｏｋｉセミコンダクタ株式会社 半導体素子における配線形成方法
JP3892621B2 (ja) * 1999-04-19 2007-03-14 株式会社神戸製鋼所 配線膜の形成方法
US6355979B2 (en) * 1999-05-25 2002-03-12 Stmicroelectronics, Inc. Hard mask for copper plasma etch
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US20030155079A1 (en) * 1999-11-15 2003-08-21 Andrew D. Bailey Plasma processing system with dynamic gas distribution control
US20020072228A1 (en) * 1999-12-15 2002-06-13 Texas A&M University System Semiconductor conductive pattern formation method
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6613667B1 (en) * 2001-05-02 2003-09-02 The Texas A&M University System Forming an interconnect of a semiconductor device
TW550648B (en) * 2001-07-02 2003-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6518183B1 (en) * 2001-09-06 2003-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Hillock inhibiting method for forming a passivated copper containing conductor layer
JP4024508B2 (ja) * 2001-10-09 2007-12-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6806948B2 (en) * 2002-03-29 2004-10-19 Lam Research Corporation System and method of broad band optical end point detection for film change indication
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KR100483290B1 (ko) 2002-12-14 2005-04-15 동부아남반도체 주식회사 반도체 소자의 제조 방법
KR100482180B1 (ko) * 2002-12-16 2005-04-14 동부아남반도체 주식회사 반도체 소자 제조방법
US7129167B1 (en) * 2003-03-14 2006-10-31 Lam Research Corporation Methods and systems for a stress-free cleaning a surface of a substrate
US6821899B2 (en) * 2003-03-14 2004-11-23 Lam Research Corporation System, method and apparatus for improved local dual-damascene planarization
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US6939796B2 (en) * 2003-03-14 2005-09-06 Lam Research Corporation System, method and apparatus for improved global dual-damascene planarization
US20050287698A1 (en) * 2004-06-28 2005-12-29 Zhiyong Li Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices

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