JP2012096329A5 - - Google Patents

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Publication number
JP2012096329A5
JP2012096329A5 JP2010246980A JP2010246980A JP2012096329A5 JP 2012096329 A5 JP2012096329 A5 JP 2012096329A5 JP 2010246980 A JP2010246980 A JP 2010246980A JP 2010246980 A JP2010246980 A JP 2010246980A JP 2012096329 A5 JP2012096329 A5 JP 2012096329A5
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JP
Japan
Prior art keywords
insulating film
active layer
electromechanical transducer
manufacturing
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010246980A
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English (en)
Japanese (ja)
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JP2012096329A (ja
JP5778914B2 (ja
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Publication date
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Priority to JP2010246980A priority Critical patent/JP5778914B2/ja
Priority claimed from JP2010246980A external-priority patent/JP5778914B2/ja
Priority to US13/280,269 priority patent/US20120112603A1/en
Publication of JP2012096329A publication Critical patent/JP2012096329A/ja
Publication of JP2012096329A5 publication Critical patent/JP2012096329A5/ja
Application granted granted Critical
Publication of JP5778914B2 publication Critical patent/JP5778914B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010246980A 2010-11-04 2010-11-04 電気機械変換装置の製造方法 Expired - Fee Related JP5778914B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010246980A JP5778914B2 (ja) 2010-11-04 2010-11-04 電気機械変換装置の製造方法
US13/280,269 US20120112603A1 (en) 2010-11-04 2011-10-24 Electromechanical transducer and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010246980A JP5778914B2 (ja) 2010-11-04 2010-11-04 電気機械変換装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012096329A JP2012096329A (ja) 2012-05-24
JP2012096329A5 true JP2012096329A5 (enExample) 2013-12-19
JP5778914B2 JP5778914B2 (ja) 2015-09-16

Family

ID=46018952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010246980A Expired - Fee Related JP5778914B2 (ja) 2010-11-04 2010-11-04 電気機械変換装置の製造方法

Country Status (2)

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US (1) US20120112603A1 (enExample)
JP (1) JP5778914B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013158210A2 (en) 2012-02-17 2013-10-24 Yale University Heterogeneous material integration through guided lateral growth
WO2014144698A2 (en) * 2013-03-15 2014-09-18 Yale University Large-area, laterally-grown epitaxial semiconductor layers
JP5901566B2 (ja) * 2013-04-18 2016-04-13 キヤノン株式会社 トランスデューサ、トランスデューサの製造方法、及び被検体情報取得装置
US9978845B2 (en) 2014-04-16 2018-05-22 Yale University Method of obtaining planar semipolar gallium nitride surfaces
CN106233471A (zh) 2014-04-16 2016-12-14 耶鲁大学 蓝宝石衬底上的氮‑极性的半极性GaN层和器件
WO2018031876A1 (en) 2016-08-12 2018-02-15 Yale University Stacking fault-free semipolar and nonpolar gan grown on foreign substrates by eliminating the nitrogen polar facets during the growth
WO2018100015A1 (en) * 2016-12-01 2018-06-07 Koninklijke Philips N.V. Cmut probe, system and method
JP6904814B2 (ja) * 2017-06-30 2021-07-21 キヤノン株式会社 中空構造体の製造方法、及び中空構造体
JP2021522734A (ja) * 2018-05-03 2021-08-30 バタフライ ネットワーク，インコーポレイテッド Ｃｍｏｓセンサ上の超音波トランスデューサ用の圧力ポート
DE102018210063A1 (de) * 2018-06-21 2019-08-01 Robert Bosch Gmbh MEMS-Sensor sowie Verfahren zur Herstellung eines MEMS-Sensors
CN113453807B (zh) * 2019-02-25 2022-09-20 蝴蝶网络有限公司 微加工超声换能器器件的自适应腔体厚度控制
TWI740410B (zh) * 2020-03-10 2021-09-21 友達光電股份有限公司 換能器
WO2022006099A1 (en) * 2020-06-30 2022-01-06 Bfly Operations, Inc. Formation of self-assembled monolayer for ultrasonic transducers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10065013B4 (de) * 2000-12-23 2009-12-24 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
JP4773630B2 (ja) * 2001-05-15 2011-09-14 株式会社デンソー ダイアフラム型半導体装置とその製造方法
JP3778128B2 (ja) * 2002-05-14 2006-05-24 株式会社デンソー メンブレンを有する半導体装置の製造方法
DE10352001A1 (de) * 2003-11-07 2005-06-09 Robert Bosch Gmbh Mikromechanisches Bauelement mit einer Membran und Verfahren zur Herstellung eines solchen Bauelements
DE102005004878B4 (de) * 2005-02-03 2015-01-08 Robert Bosch Gmbh Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren
US7838321B2 (en) * 2005-12-20 2010-11-23 Xerox Corporation Multiple stage MEMS release for isolation of similar materials
US20070145523A1 (en) * 2005-12-28 2007-06-28 Palo Alto Research Center Incorporated Integrateable capacitors and microcoils and methods of making thereof
US7785913B2 (en) * 2006-02-23 2010-08-31 Innovative Micro Technology System and method for forming moveable features on a composite substrate
GB0605576D0 (en) * 2006-03-20 2006-04-26 Oligon Ltd MEMS device
JP5408937B2 (ja) * 2007-09-25 2014-02-05 キヤノン株式会社 電気機械変換素子及びその製造方法
JP5305993B2 (ja) * 2008-05-02 2013-10-02 キヤノン株式会社 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子
FR2932791B1 (fr) * 2008-06-23 2010-06-18 Commissariat Energie Atomique Procede de realisation d'une structure comportant un element mobile au moyen d'une couche sacrificielle heterogene.
US8161803B2 (en) * 2008-07-03 2012-04-24 Hysitron Incorporated Micromachined comb drive for quantitative nanoindentation
US20100173437A1 (en) * 2008-10-21 2010-07-08 Wygant Ira O Method of fabricating CMUTs that generate low-frequency and high-intensity ultrasound
JP5436013B2 (ja) * 2009-04-10 2014-03-05 キヤノン株式会社 機械電気変化素子

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