JP2008511172A5 - - Google Patents

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Publication number
JP2008511172A5
JP2008511172A5 JP2007529864A JP2007529864A JP2008511172A5 JP 2008511172 A5 JP2008511172 A5 JP 2008511172A5 JP 2007529864 A JP2007529864 A JP 2007529864A JP 2007529864 A JP2007529864 A JP 2007529864A JP 2008511172 A5 JP2008511172 A5 JP 2008511172A5
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JP
Japan
Prior art keywords
semiconductor layer
layer
semiconductor
recess
forming
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JP2007529864A
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English (en)
Japanese (ja)
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JP2008511172A (ja
JP5205054B2 (ja
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Priority claimed from US10/925,855 external-priority patent/US7229903B2/en
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Publication of JP2008511172A publication Critical patent/JP2008511172A/ja
Publication of JP2008511172A5 publication Critical patent/JP2008511172A5/ja
Application granted granted Critical
Publication of JP5205054B2 publication Critical patent/JP5205054B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007529864A 2004-08-25 2005-07-22 凹部形成された半導体デバイス Expired - Lifetime JP5205054B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/925,855 2004-08-25
US10/925,855 US7229903B2 (en) 2004-08-25 2004-08-25 Recessed semiconductor device
PCT/US2005/026064 WO2006025971A1 (en) 2004-08-25 2005-07-22 Recessed semiconductor device

Publications (3)

Publication Number Publication Date
JP2008511172A JP2008511172A (ja) 2008-04-10
JP2008511172A5 true JP2008511172A5 (enExample) 2008-09-04
JP5205054B2 JP5205054B2 (ja) 2013-06-05

Family

ID=35941808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007529864A Expired - Lifetime JP5205054B2 (ja) 2004-08-25 2005-07-22 凹部形成された半導体デバイス

Country Status (5)

Country Link
US (1) US7229903B2 (enExample)
JP (1) JP5205054B2 (enExample)
CN (1) CN101002336A (enExample)
TW (1) TWI402986B (enExample)
WO (1) WO2006025971A1 (enExample)

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US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
WO2006080109A1 (ja) * 2005-01-25 2006-08-03 Fujitsu Limited Ｍｉｓ構造を有する半導体装置及びその製造方法
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2008021766A (ja) * 2006-07-12 2008-01-31 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタおよびその製造方法
JP4304198B2 (ja) 2006-09-15 2009-07-29 株式会社東芝 半導体装置
US8283699B2 (en) * 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US9647103B2 (en) * 2007-05-04 2017-05-09 Sensor Electronic Technology, Inc. Semiconductor device with modulated field element isolated from gate electrode
US7800132B2 (en) * 2007-10-25 2010-09-21 Northrop Grumman Systems Corporation High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
US7985986B2 (en) 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
CN101740388B (zh) * 2008-11-10 2011-05-11 中芯国际集成电路制造(上海)有限公司 金属半导体场效应晶体管的制造方法
US8008977B2 (en) * 2009-04-14 2011-08-30 Triquint Semiconductor, Inc. Field-plated transistor including feedback resistor
US8754496B2 (en) * 2009-04-14 2014-06-17 Triquint Semiconductor, Inc. Field effect transistor having a plurality of field plates
US8390000B2 (en) * 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8258543B2 (en) * 2009-12-07 2012-09-04 Intel Corporation Quantum-well-based semiconductor devices
JP5703565B2 (ja) * 2010-01-12 2015-04-22 住友電気工業株式会社 化合物半導体装置
JP2011171640A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
KR101583094B1 (ko) * 2010-12-14 2016-01-07 한국전자통신연구원 반도체 소자 및 이의 제조방법
US9024357B2 (en) * 2011-04-15 2015-05-05 Stmicroelectronics S.R.L. Method for manufacturing a HEMT transistor and corresponding HEMT transistor
US8349116B1 (en) * 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8884308B2 (en) * 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
KR101903509B1 (ko) * 2012-07-11 2018-10-05 한국전자통신연구원 전계효과형 화합물반도체소자의 제조방법
US9142626B1 (en) * 2013-04-23 2015-09-22 Hrl Laboratories, Llc Stepped field plate wide bandgap field-effect transistor and method
US9847411B2 (en) * 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
JP2015046445A (ja) * 2013-08-27 2015-03-12 富士通株式会社 化合物半導体装置及びその製造方法
KR102154336B1 (ko) * 2014-01-09 2020-09-10 한국전자통신연구원 고전압 구동용 전계효과 트랜지스터 및 제조 방법
EP2930754A1 (en) * 2014-04-11 2015-10-14 Nxp B.V. Semiconductor device
JP6496149B2 (ja) * 2015-01-22 2019-04-03 ローム株式会社 半導体装置および半導体装置の製造方法
US10056478B2 (en) * 2015-11-06 2018-08-21 Taiwan Semiconductor Manufacturing Company Ltd. High-electron-mobility transistor and manufacturing method thereof
US9461159B1 (en) * 2016-01-14 2016-10-04 Northrop Grumman Systems Corporation Self-stop gate recess etching process for semiconductor field effect transistors
US10756206B2 (en) 2017-07-10 2020-08-25 Qualcomm Incorporated High power compound semiconductor field effect transistor devices with low doped drain
JP6689424B2 (ja) * 2019-03-08 2020-04-28 ローム株式会社 半導体装置
US11075271B2 (en) * 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods

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JP3429700B2 (ja) * 1999-03-19 2003-07-22 富士通カンタムデバイス株式会社 高電子移動度トランジスタ
JP3371871B2 (ja) * 1999-11-16 2003-01-27 日本電気株式会社 半導体装置の製造方法
JP2001237250A (ja) * 2000-02-22 2001-08-31 Nec Corp 半導体装置
TWI257179B (en) 2000-07-17 2006-06-21 Fujitsu Quantum Devices Ltd High-speed compound semiconductor device operable at large output power with minimum leakage current
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