JP5205054B2 - 凹部形成された半導体デバイス - Google Patents

凹部形成された半導体デバイス Download PDF

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Publication number
JP5205054B2
JP5205054B2 JP2007529864A JP2007529864A JP5205054B2 JP 5205054 B2 JP5205054 B2 JP 5205054B2 JP 2007529864 A JP2007529864 A JP 2007529864A JP 2007529864 A JP2007529864 A JP 2007529864A JP 5205054 B2 JP5205054 B2 JP 5205054B2
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Japan
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layer
semiconductor layer
recess
gate
semiconductor
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Expired - Lifetime
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JP2007529864A
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English (en)
Japanese (ja)
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JP2008511172A5 (enExample
JP2008511172A (ja
Inventor
ピー． リー、シン−フー
エム． グリーン、ブルース
エル． ハーティン、オリン
ワイ． ラン、エレン
イー． ワイツェル、チャールズ
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NXP USA Inc
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NXP USA Inc
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Publication of JP2008511172A5 publication Critical patent/JP2008511172A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4738—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H01L21/28593—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T asymmetrical sectional shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2007529864A 2004-08-25 2005-07-22 凹部形成された半導体デバイス Expired - Lifetime JP5205054B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/925,855 2004-08-25
US10/925,855 US7229903B2 (en) 2004-08-25 2004-08-25 Recessed semiconductor device
PCT/US2005/026064 WO2006025971A1 (en) 2004-08-25 2005-07-22 Recessed semiconductor device

Publications (3)

Publication Number Publication Date
JP2008511172A JP2008511172A (ja) 2008-04-10
JP2008511172A5 JP2008511172A5 (enExample) 2008-09-04
JP5205054B2 true JP5205054B2 (ja) 2013-06-05

Family

ID=35941808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007529864A Expired - Lifetime JP5205054B2 (ja) 2004-08-25 2005-07-22 凹部形成された半導体デバイス

Country Status (5)

Country Link
US (1) US7229903B2 (enExample)
JP (1) JP5205054B2 (enExample)
CN (1) CN101002336A (enExample)
TW (1) TWI402986B (enExample)
WO (1) WO2006025971A1 (enExample)

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US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP4845872B2 (ja) * 2005-01-25 2011-12-28 富士通株式会社 Ｍｉｓ構造を有する半導体装置及びその製造方法
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2008021766A (ja) * 2006-07-12 2008-01-31 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタおよびその製造方法
JP4304198B2 (ja) 2006-09-15 2009-07-29 株式会社東芝 半導体装置
JP5105160B2 (ja) * 2006-11-13 2012-12-19 クリー インコーポレイテッド トランジスタ
US9647103B2 (en) * 2007-05-04 2017-05-09 Sensor Electronic Technology, Inc. Semiconductor device with modulated field element isolated from gate electrode
US7800132B2 (en) * 2007-10-25 2010-09-21 Northrop Grumman Systems Corporation High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
US7985986B2 (en) 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
CN101740388B (zh) * 2008-11-10 2011-05-11 中芯国际集成电路制造(上海)有限公司 金属半导体场效应晶体管的制造方法
US8754496B2 (en) * 2009-04-14 2014-06-17 Triquint Semiconductor, Inc. Field effect transistor having a plurality of field plates
US8008977B2 (en) * 2009-04-14 2011-08-30 Triquint Semiconductor, Inc. Field-plated transistor including feedback resistor
US8390000B2 (en) * 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8258543B2 (en) * 2009-12-07 2012-09-04 Intel Corporation Quantum-well-based semiconductor devices
JP5703565B2 (ja) * 2010-01-12 2015-04-22 住友電気工業株式会社 化合物半導体装置
JP2011171640A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
KR101583094B1 (ko) * 2010-12-14 2016-01-07 한국전자통신연구원 반도체 소자 및 이의 제조방법
US9024357B2 (en) * 2011-04-15 2015-05-05 Stmicroelectronics S.R.L. Method for manufacturing a HEMT transistor and corresponding HEMT transistor
US8349116B1 (en) * 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8884308B2 (en) 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
KR101903509B1 (ko) * 2012-07-11 2018-10-05 한국전자통신연구원 전계효과형 화합물반도체소자의 제조방법
US9202880B1 (en) * 2013-04-23 2015-12-01 Hrl Laboratories, Llc Etch-based fabrication process for stepped field-plate wide-bandgap
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
JP2015046445A (ja) * 2013-08-27 2015-03-12 富士通株式会社 化合物半導体装置及びその製造方法
KR102154336B1 (ko) * 2014-01-09 2020-09-10 한국전자통신연구원 고전압 구동용 전계효과 트랜지스터 및 제조 방법
EP2930754A1 (en) * 2014-04-11 2015-10-14 Nxp B.V. Semiconductor device
JP6496149B2 (ja) * 2015-01-22 2019-04-03 ローム株式会社 半導体装置および半導体装置の製造方法
US10056478B2 (en) * 2015-11-06 2018-08-21 Taiwan Semiconductor Manufacturing Company Ltd. High-electron-mobility transistor and manufacturing method thereof
US9461159B1 (en) * 2016-01-14 2016-10-04 Northrop Grumman Systems Corporation Self-stop gate recess etching process for semiconductor field effect transistors
US10756206B2 (en) * 2017-07-10 2020-08-25 Qualcomm Incorporated High power compound semiconductor field effect transistor devices with low doped drain
JP6689424B2 (ja) * 2019-03-08 2020-04-28 ローム株式会社 半導体装置
US11075271B2 (en) * 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods

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JP3147009B2 (ja) * 1996-10-30 2001-03-19 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP3111985B2 (ja) * 1998-06-16 2000-11-27 日本電気株式会社 電界効果型トランジスタ
JP3429700B2 (ja) * 1999-03-19 2003-07-22 富士通カンタムデバイス株式会社 高電子移動度トランジスタ
JP3371871B2 (ja) * 1999-11-16 2003-01-27 日本電気株式会社 半導体装置の製造方法
JP2001237250A (ja) * 2000-02-22 2001-08-31 Nec Corp 半導体装置
TWI257179B (en) * 2000-07-17 2006-06-21 Fujitsu Quantum Devices Ltd High-speed compound semiconductor device operable at large output power with minimum leakage current
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JP3744381B2 (ja) * 2001-05-17 2006-02-08 日本電気株式会社 電界効果型トランジスタ
JP2003174039A (ja) * 2001-09-27 2003-06-20 Murata Mfg Co Ltd ヘテロ接合電界効果トランジスタ
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JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ

Also Published As

Publication number Publication date
WO2006025971A1 (en) 2006-03-09
US7229903B2 (en) 2007-06-12
JP2008511172A (ja) 2008-04-10
CN101002336A (zh) 2007-07-18
TW200620657A (en) 2006-06-16
TWI402986B (zh) 2013-07-21
US20060043416A1 (en) 2006-03-02

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