TWI402986B - 嵌壁式半導體裝置 - Google Patents

嵌壁式半導體裝置 Download PDF

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Publication number
TWI402986B
TWI402986B TW094127146A TW94127146A TWI402986B TW I402986 B TWI402986 B TW I402986B TW 094127146 A TW094127146 A TW 094127146A TW 94127146 A TW94127146 A TW 94127146A TW I402986 B TWI402986 B TW I402986B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor layer
conductive portion
semiconductor
wall
Prior art date
Application number
TW094127146A
Other languages
English (en)
Chinese (zh)
Other versions
TW200620657A (en
Inventor
Hsin Hua P Li
Bruce M Green
Olin L Hartin
Ellen Y Lan
Charles E Weitzel
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200620657A publication Critical patent/TW200620657A/zh
Application granted granted Critical
Publication of TWI402986B publication Critical patent/TWI402986B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4738—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H01L21/28593—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T asymmetrical sectional shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
TW094127146A 2004-08-25 2005-08-10 嵌壁式半導體裝置 TWI402986B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/925,855 US7229903B2 (en) 2004-08-25 2004-08-25 Recessed semiconductor device

Publications (2)

Publication Number Publication Date
TW200620657A TW200620657A (en) 2006-06-16
TWI402986B true TWI402986B (zh) 2013-07-21

Family

ID=35941808

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094127146A TWI402986B (zh) 2004-08-25 2005-08-10 嵌壁式半導體裝置

Country Status (5)

Country Link
US (1) US7229903B2 (enExample)
JP (1) JP5205054B2 (enExample)
CN (1) CN101002336A (enExample)
TW (1) TWI402986B (enExample)
WO (1) WO2006025971A1 (enExample)

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US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP4845872B2 (ja) * 2005-01-25 2011-12-28 富士通株式会社 Ｍｉｓ構造を有する半導体装置及びその製造方法
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2008021766A (ja) * 2006-07-12 2008-01-31 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタおよびその製造方法
JP4304198B2 (ja) 2006-09-15 2009-07-29 株式会社東芝 半導体装置
EP1921669B1 (en) * 2006-11-13 2015-09-02 Cree, Inc. GaN based HEMTs with buried field plates
US9647103B2 (en) * 2007-05-04 2017-05-09 Sensor Electronic Technology, Inc. Semiconductor device with modulated field element isolated from gate electrode
US7800132B2 (en) * 2007-10-25 2010-09-21 Northrop Grumman Systems Corporation High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
US7985986B2 (en) 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
CN101740388B (zh) * 2008-11-10 2011-05-11 中芯国际集成电路制造(上海)有限公司 金属半导体场效应晶体管的制造方法
US8754496B2 (en) * 2009-04-14 2014-06-17 Triquint Semiconductor, Inc. Field effect transistor having a plurality of field plates
US8008977B2 (en) * 2009-04-14 2011-08-30 Triquint Semiconductor, Inc. Field-plated transistor including feedback resistor
US8390000B2 (en) * 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8258543B2 (en) * 2009-12-07 2012-09-04 Intel Corporation Quantum-well-based semiconductor devices
JP5703565B2 (ja) * 2010-01-12 2015-04-22 住友電気工業株式会社 化合物半導体装置
JP2011171640A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
KR101583094B1 (ko) * 2010-12-14 2016-01-07 한국전자통신연구원 반도체 소자 및 이의 제조방법
US9024357B2 (en) * 2011-04-15 2015-05-05 Stmicroelectronics S.R.L. Method for manufacturing a HEMT transistor and corresponding HEMT transistor
US8349116B1 (en) * 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8884308B2 (en) 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
KR101903509B1 (ko) * 2012-07-11 2018-10-05 한국전자통신연구원 전계효과형 화합물반도체소자의 제조방법
US9202880B1 (en) * 2013-04-23 2015-12-01 Hrl Laboratories, Llc Etch-based fabrication process for stepped field-plate wide-bandgap
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
JP2015046445A (ja) * 2013-08-27 2015-03-12 富士通株式会社 化合物半導体装置及びその製造方法
KR102154336B1 (ko) * 2014-01-09 2020-09-10 한국전자통신연구원 고전압 구동용 전계효과 트랜지스터 및 제조 방법
EP2930754A1 (en) * 2014-04-11 2015-10-14 Nxp B.V. Semiconductor device
JP6496149B2 (ja) * 2015-01-22 2019-04-03 ローム株式会社 半導体装置および半導体装置の製造方法
US10056478B2 (en) * 2015-11-06 2018-08-21 Taiwan Semiconductor Manufacturing Company Ltd. High-electron-mobility transistor and manufacturing method thereof
US9461159B1 (en) * 2016-01-14 2016-10-04 Northrop Grumman Systems Corporation Self-stop gate recess etching process for semiconductor field effect transistors
US10756206B2 (en) * 2017-07-10 2020-08-25 Qualcomm Incorporated High power compound semiconductor field effect transistor devices with low doped drain
JP6689424B2 (ja) * 2019-03-08 2020-04-28 ローム株式会社 半導体装置
US11075271B2 (en) * 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods

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US6720200B2 (en) * 1996-10-30 2004-04-13 Nec Corporation Field effect transistor and fabrication process thereof

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JP3371871B2 (ja) * 1999-11-16 2003-01-27 日本電気株式会社 半導体装置の製造方法
JP2001237250A (ja) * 2000-02-22 2001-08-31 Nec Corp 半導体装置
TWI257179B (en) * 2000-07-17 2006-06-21 Fujitsu Quantum Devices Ltd High-speed compound semiconductor device operable at large output power with minimum leakage current
JP3744381B2 (ja) * 2001-05-17 2006-02-08 日本電気株式会社 電界効果型トランジスタ
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US6720200B2 (en) * 1996-10-30 2004-04-13 Nec Corporation Field effect transistor and fabrication process thereof
TW464963B (en) * 2000-10-18 2001-11-21 Vanguard Int Semiconduct Corp Fabricating method of transistor

Also Published As

Publication number Publication date
WO2006025971A1 (en) 2006-03-09
JP5205054B2 (ja) 2013-06-05
CN101002336A (zh) 2007-07-18
JP2008511172A (ja) 2008-04-10
US7229903B2 (en) 2007-06-12
US20060043416A1 (en) 2006-03-02
TW200620657A (en) 2006-06-16

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