ATE510795T1 - Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen material - Google Patents
Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen materialInfo
- Publication number
- ATE510795T1 ATE510795T1 AT09290471T AT09290471T ATE510795T1 AT E510795 T1 ATE510795 T1 AT E510795T1 AT 09290471 T AT09290471 T AT 09290471T AT 09290471 T AT09290471 T AT 09290471T AT E510795 T1 ATE510795 T1 AT E510795T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- producing
- crystalline material
- single crystalline
- mems component
- Prior art date
Links
- 239000002178 crystalline material Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
- B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2436—Disk resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0115—Porous silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/0136—Controlling etch progression by doping limited material regions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0176—Chemical vapour Deposition
- B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0136—Growing or depositing of a covering layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0803494A FR2932788A1 (fr) | 2008-06-23 | 2008-06-23 | Procede de fabrication d'un composant electromecanique mems / nems. |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE510795T1 true ATE510795T1 (de) | 2011-06-15 |
Family
ID=40436420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09290471T ATE510795T1 (de) | 2008-06-23 | 2009-06-22 | Verfahren zur herstellung eines elektromechanischen mems-bauteils in einem einkristallinen material |
Country Status (5)
Country | Link |
---|---|
US (1) | US7906439B2 (de) |
EP (1) | EP2138451B1 (de) |
JP (1) | JP2010012594A (de) |
AT (1) | ATE510795T1 (de) |
FR (1) | FR2932788A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2932923B1 (fr) * | 2008-06-23 | 2011-03-25 | Commissariat Energie Atomique | Substrat heterogene comportant une couche sacrificielle et son procede de realisation. |
WO2010111601A2 (en) | 2009-03-26 | 2010-09-30 | Semprius, Inc. | Methods of forming printable integrated circuit devices and devices formed thereby |
JP2011189423A (ja) * | 2010-03-12 | 2011-09-29 | Seiko Epson Corp | Mems素子および発振器 |
US8030202B1 (en) * | 2010-12-10 | 2011-10-04 | International Business Machines Corporation | Temporary etchable liner for forming air gap |
FR2983189B1 (fr) * | 2011-11-30 | 2014-02-07 | Commissariat Energie Atomique | Procede de realisation d'une structure comportant au moins une partie active presentant des zones d'epaisseurs differentes |
FR2983188B1 (fr) * | 2011-11-30 | 2016-07-01 | Commissariat Energie Atomique | Procede de realisation d'une structure comportant au moins une partie active multiepaisseur |
US8987835B2 (en) | 2012-03-27 | 2015-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with a buried semiconductor material between two fins |
FR3002219B1 (fr) * | 2013-02-19 | 2015-04-10 | Commissariat Energie Atomique | Procede de fabrication d'une structure micromecanique et/ou nanomecanique comportant une surface poreuse |
EP3013735B1 (de) * | 2013-06-27 | 2020-04-01 | Soitec | Verfahren zur herstellung von halbleiterstrukturen mit hohlräumen, die mit verzichtbarem material gefüllt sind |
US9912314B2 (en) * | 2014-07-25 | 2018-03-06 | Akoustics, Inc. | Single crystal acoustic resonator and bulk acoustic wave filter |
US9805966B2 (en) * | 2014-07-25 | 2017-10-31 | Akoustis, Inc. | Wafer scale packaging |
KR20170094305A (ko) * | 2014-12-09 | 2017-08-17 | 세이코 엡슨 가부시키가이샤 | 압전 디바이스, 액체 분사 헤드, 압전 디바이스의 제조 방법, 및 액체 분사 헤드의 제조 방법 |
DE102015224481A1 (de) * | 2015-12-08 | 2017-06-08 | Robert Bosch Gmbh | Laser-Reseal mit verschiedenen Kappenmaterialien |
DE102017216904A1 (de) * | 2017-09-25 | 2019-03-28 | Robert Bosch Gmbh | Verfahren zur Herstellung dünner MEMS-Wafer |
FR3093511B1 (fr) * | 2019-03-05 | 2022-08-05 | Commissariat Energie Atomique | Procédé de réalisation d’un système micro-électro-mécanique réalisé à partir d’une couche piézoélectrique ou ferroélectrique reportée |
CN112039457A (zh) * | 2019-07-19 | 2020-12-04 | 中芯集成电路(宁波)有限公司上海分公司 | 薄膜体声波谐振器的制作方法 |
DE102020214792A1 (de) | 2020-11-25 | 2022-05-25 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanisches Bauelement |
US11463070B2 (en) | 2022-01-18 | 2022-10-04 | Shenzhen Newsonic Technologies Co., Ltd. | FBAR structure and manufacturing method of same |
CN114094970B (zh) * | 2022-01-20 | 2022-05-17 | 深圳新声半导体有限公司 | 用于制作薄膜体声波谐振器的方法及谐振器 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4392060A (en) * | 1980-10-27 | 1983-07-05 | Ivy Jessie T | Wind and water power generator |
US5427975A (en) * | 1993-05-10 | 1995-06-27 | Delco Electronics Corporation | Method of micromachining an integrated sensor on the surface of a silicon wafer |
EP0895276A1 (de) * | 1997-07-31 | 1999-02-03 | STMicroelectronics S.r.l. | Verfahren zum Herstellen integrierter Mikrostrukturen von Einkristall-Halbleitermaterialien |
GB9916778D0 (en) * | 1999-07-16 | 1999-09-15 | Kelly H P G | Safeguarding wave to electrical power generating apparatus |
KR100343211B1 (ko) | 1999-11-04 | 2002-07-10 | 윤종용 | 웨이퍼 레벨 진공 패키징이 가능한 mems의 구조물의제작방법 |
US6208035B1 (en) * | 2000-05-22 | 2001-03-27 | I-Nan Kao | Power generation apparatus utilizing energy produced from ocean level fluctuation |
JP2003133627A (ja) * | 2001-10-19 | 2003-05-09 | Sharp Corp | 半導体レーザ装置 |
KR100524525B1 (ko) * | 2003-04-19 | 2005-11-01 | 임명식 | 파력발전장치 |
TWI277274B (en) * | 2003-06-02 | 2007-03-21 | Kun Shan University Of Technol | Apparatus for converting ocean wave energy into electric power |
US7042112B2 (en) * | 2004-02-03 | 2006-05-09 | Seawood Designs Inc. | Wave energy conversion system |
FR2875947B1 (fr) | 2004-09-30 | 2007-09-07 | Tracit Technologies | Nouvelle structure pour microelectronique et microsysteme et procede de realisation |
FR2876219B1 (fr) | 2004-10-06 | 2006-11-24 | Commissariat Energie Atomique | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees. |
FR2876220B1 (fr) | 2004-10-06 | 2007-09-28 | Commissariat Energie Atomique | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees. |
US7352949B2 (en) * | 2004-11-24 | 2008-04-01 | National Sun Yat-Sen University | Fiber used in wideband amplified spontaneous emission light source and the method of making the same |
JP5284949B2 (ja) * | 2006-05-01 | 2013-09-11 | オーシャン パワー テクノロジーズ,インク. | 鉛直構造を有するヒーブ板 |
DE102006032195A1 (de) * | 2006-07-12 | 2008-01-24 | Robert Bosch Gmbh | Verfahren zur Herstellung von MEMS-Strukturen |
FR2906238B1 (fr) * | 2006-09-27 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation d'un composant electromecanique sur un substrat plan |
US7671515B2 (en) * | 2006-11-07 | 2010-03-02 | Robert Bosch, Gmbh | Microelectromechanical devices and fabrication methods |
FR2932923B1 (fr) * | 2008-06-23 | 2011-03-25 | Commissariat Energie Atomique | Substrat heterogene comportant une couche sacrificielle et son procede de realisation. |
-
2008
- 2008-06-23 FR FR0803494A patent/FR2932788A1/fr active Pending
-
2009
- 2009-06-22 AT AT09290471T patent/ATE510795T1/de not_active IP Right Cessation
- 2009-06-22 EP EP09290471A patent/EP2138451B1/de active Active
- 2009-06-22 JP JP2009147930A patent/JP2010012594A/ja active Pending
- 2009-06-22 US US12/488,898 patent/US7906439B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010012594A (ja) | 2010-01-21 |
EP2138451A1 (de) | 2009-12-30 |
EP2138451B1 (de) | 2011-05-25 |
US7906439B2 (en) | 2011-03-15 |
US20100029031A1 (en) | 2010-02-04 |
FR2932788A1 (fr) | 2009-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |