JP2007306018A5 - - Google Patents
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- Publication number
- JP2007306018A5 JP2007306018A5 JP2007179460A JP2007179460A JP2007306018A5 JP 2007306018 A5 JP2007306018 A5 JP 2007306018A5 JP 2007179460 A JP2007179460 A JP 2007179460A JP 2007179460 A JP2007179460 A JP 2007179460A JP 2007306018 A5 JP2007306018 A5 JP 2007306018A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- manufacturing
- integrated circuit
- circuit device
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 64
- 238000004519 manufacturing process Methods 0.000 claims 26
- 238000005498 polishing Methods 0.000 claims 20
- 238000000034 method Methods 0.000 claims 10
- 230000004888 barrier function Effects 0.000 claims 8
- 239000004020 conductor Substances 0.000 claims 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 6
- 229910052802 copper Inorganic materials 0.000 claims 6
- 239000002002 slurry Substances 0.000 claims 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 4
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007179460A JP4966116B2 (ja) | 2007-07-09 | 2007-07-09 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007179460A JP4966116B2 (ja) | 2007-07-09 | 2007-07-09 | 半導体集積回路装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001118413A Division JP2002313757A (ja) | 2001-04-17 | 2001-04-17 | 半導体集積回路装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008280740A Division JP2009027198A (ja) | 2008-10-31 | 2008-10-31 | 半導体集積回路装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007306018A JP2007306018A (ja) | 2007-11-22 |
| JP2007306018A5 true JP2007306018A5 (enExample) | 2008-12-18 |
| JP4966116B2 JP4966116B2 (ja) | 2012-07-04 |
Family
ID=38839624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007179460A Expired - Fee Related JP4966116B2 (ja) | 2007-07-09 | 2007-07-09 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4966116B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102089121B (zh) | 2008-07-31 | 2015-04-08 | 信越半导体股份有限公司 | 芯片的研磨方法及双面研磨装置 |
| JP2010141218A (ja) * | 2008-12-15 | 2010-06-24 | Ebara Corp | ウェハのベベル部形状管理方法 |
| CN114429897A (zh) * | 2020-10-29 | 2022-05-03 | 中国科学院微电子研究所 | 一种半导体器件及其加工方法、晶圆的处理方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2645478B2 (ja) * | 1988-10-07 | 1997-08-25 | 富士通株式会社 | 半導体装置の製造方法 |
| JP3111928B2 (ja) * | 1997-05-14 | 2000-11-27 | 日本電気株式会社 | 金属膜の研磨方法 |
| JPH10328989A (ja) * | 1997-06-02 | 1998-12-15 | Speedfam Co Ltd | ウエハエッジの鏡面研磨方法及び装置 |
| JPH1133888A (ja) * | 1997-07-24 | 1999-02-09 | Super Silicon Kenkyusho:Kk | ウェーハの鏡面面取り装置 |
| JP3556437B2 (ja) * | 1997-07-25 | 2004-08-18 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JPH1170449A (ja) * | 1997-08-29 | 1999-03-16 | Mitsubishi Materials Corp | 半導体ウェーハの面取り面研磨装置 |
| JP3599548B2 (ja) * | 1997-12-18 | 2004-12-08 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| JPH11221744A (ja) * | 1998-02-09 | 1999-08-17 | Mitsubishi Materials Corp | 半導体ウェーハの面取り面研磨装置 |
| JP2000021882A (ja) * | 1998-07-01 | 2000-01-21 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
| JP3437771B2 (ja) * | 1998-08-20 | 2003-08-18 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2000198057A (ja) * | 1998-10-26 | 2000-07-18 | Komatsu Electronic Metals Co Ltd | 半導体ウェハの面取り加工面の鏡面研磨装置 |
| JP2000208618A (ja) * | 1999-01-08 | 2000-07-28 | Seiko Epson Corp | 半導体装置の製造方法および半導体装置 |
| JP3395696B2 (ja) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
-
2007
- 2007-07-09 JP JP2007179460A patent/JP4966116B2/ja not_active Expired - Fee Related
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