JP4966116B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP4966116B2
JP4966116B2 JP2007179460A JP2007179460A JP4966116B2 JP 4966116 B2 JP4966116 B2 JP 4966116B2 JP 2007179460 A JP2007179460 A JP 2007179460A JP 2007179460 A JP2007179460 A JP 2007179460A JP 4966116 B2 JP4966116 B2 JP 4966116B2
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Japan
Prior art keywords
film
wafer
polishing
integrated circuit
circuit device
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Expired - Fee Related
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JP2007179460A
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English (en)
Japanese (ja)
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JP2007306018A (ja
JP2007306018A5 (enExample
Inventor
利行 荒井
亮成 河合
洋史 土山
史幸 金井
伸一 中林
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2007179460A priority Critical patent/JP4966116B2/ja
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Publication of JP2007306018A5 publication Critical patent/JP2007306018A5/ja
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Publication of JP4966116B2 publication Critical patent/JP4966116B2/ja
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  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2007179460A 2007-07-09 2007-07-09 半導体集積回路装置の製造方法 Expired - Fee Related JP4966116B2 (ja)

Priority Applications (1)

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JP2007179460A JP4966116B2 (ja) 2007-07-09 2007-07-09 半導体集積回路装置の製造方法

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JP2007179460A JP4966116B2 (ja) 2007-07-09 2007-07-09 半導体集積回路装置の製造方法

Related Parent Applications (1)

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JP2001118413A Division JP2002313757A (ja) 2001-04-17 2001-04-17 半導体集積回路装置の製造方法

Related Child Applications (1)

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JP2008280740A Division JP2009027198A (ja) 2008-10-31 2008-10-31 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007306018A JP2007306018A (ja) 2007-11-22
JP2007306018A5 JP2007306018A5 (enExample) 2008-12-18
JP4966116B2 true JP4966116B2 (ja) 2012-07-04

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JP2007179460A Expired - Fee Related JP4966116B2 (ja) 2007-07-09 2007-07-09 半導体集積回路装置の製造方法

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JP (1) JP4966116B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010013390A1 (ja) 2008-07-31 2010-02-04 信越半導体株式会社 ウェーハの研磨方法および両面研磨装置
JP2010141218A (ja) * 2008-12-15 2010-06-24 Ebara Corp ウェハのベベル部形状管理方法
CN114429897A (zh) * 2020-10-29 2022-05-03 中国科学院微电子研究所 一种半导体器件及其加工方法、晶圆的处理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2645478B2 (ja) * 1988-10-07 1997-08-25 富士通株式会社 半導体装置の製造方法
JP3111928B2 (ja) * 1997-05-14 2000-11-27 日本電気株式会社 金属膜の研磨方法
JPH10328989A (ja) * 1997-06-02 1998-12-15 Speedfam Co Ltd ウエハエッジの鏡面研磨方法及び装置
JPH1133888A (ja) * 1997-07-24 1999-02-09 Super Silicon Kenkyusho:Kk ウェーハの鏡面面取り装置
JP3556437B2 (ja) * 1997-07-25 2004-08-18 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JPH1170449A (ja) * 1997-08-29 1999-03-16 Mitsubishi Materials Corp 半導体ウェーハの面取り面研磨装置
JP3599548B2 (ja) * 1997-12-18 2004-12-08 株式会社日立製作所 半導体集積回路装置の製造方法
JPH11221744A (ja) * 1998-02-09 1999-08-17 Mitsubishi Materials Corp 半導体ウェーハの面取り面研磨装置
JP2000021882A (ja) * 1998-07-01 2000-01-21 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP3437771B2 (ja) * 1998-08-20 2003-08-18 株式会社東芝 半導体装置の製造方法
JP2000198057A (ja) * 1998-10-26 2000-07-18 Komatsu Electronic Metals Co Ltd 半導体ウェハの面取り加工面の鏡面研磨装置
JP2000208618A (ja) * 1999-01-08 2000-07-28 Seiko Epson Corp 半導体装置の製造方法および半導体装置
JP3395696B2 (ja) * 1999-03-15 2003-04-14 日本電気株式会社 ウェハ処理装置およびウェハ処理方法

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JP2007306018A (ja) 2007-11-22

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