JP2001267473A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2001267473A
JP2001267473A JP2000076709A JP2000076709A JP2001267473A JP 2001267473 A JP2001267473 A JP 2001267473A JP 2000076709 A JP2000076709 A JP 2000076709A JP 2000076709 A JP2000076709 A JP 2000076709A JP 2001267473 A JP2001267473 A JP 2001267473A
Authority
JP
Japan
Prior art keywords
main surface
chip
substrate
semiconductor chip
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000076709A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001267473A5 (https=
Inventor
Hideko Ando
英子 安藤
Hiroshi Kikuchi
広 菊地
Ikuo Yoshida
育生 吉田
Toshihiko Sato
俊彦 佐藤
Tomo Shimizu
朋 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000076709A priority Critical patent/JP2001267473A/ja
Priority to KR1020010010284A priority patent/KR20010091916A/ko
Priority to US09/800,589 priority patent/US6433412B2/en
Priority to TW090105543A priority patent/TW498522B/zh
Publication of JP2001267473A publication Critical patent/JP2001267473A/ja
Publication of JP2001267473A5 publication Critical patent/JP2001267473A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42Fillings
    • H10W76/47Solid or gel fillings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • H10W72/01308Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07311Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/856Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/879Bump connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Ceramic Capacitors (AREA)
JP2000076709A 2000-03-17 2000-03-17 半導体装置およびその製造方法 Pending JP2001267473A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000076709A JP2001267473A (ja) 2000-03-17 2000-03-17 半導体装置およびその製造方法
KR1020010010284A KR20010091916A (ko) 2000-03-17 2001-02-28 반도체 장치 및 그 제조방법
US09/800,589 US6433412B2 (en) 2000-03-17 2001-03-08 Semiconductor device and a method of manufacturing the same
TW090105543A TW498522B (en) 2000-03-17 2001-03-09 Semiconductor device and its manufacture method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000076709A JP2001267473A (ja) 2000-03-17 2000-03-17 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001267473A true JP2001267473A (ja) 2001-09-28
JP2001267473A5 JP2001267473A5 (https=) 2005-02-03

Family

ID=18594407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000076709A Pending JP2001267473A (ja) 2000-03-17 2000-03-17 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US6433412B2 (https=)
JP (1) JP2001267473A (https=)
KR (1) KR20010091916A (https=)
TW (1) TW498522B (https=)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004060034A1 (ja) * 2002-12-24 2004-07-15 Matsushita Electric Industrial Co., Ltd. 電子部品内蔵モジュール
KR100443399B1 (ko) * 2001-10-25 2004-08-09 삼성전자주식회사 보이드가 형성된 열 매개 물질을 갖는 반도체 패키지
JP2007049142A (ja) * 2005-08-03 2007-02-22 Samsung Electronics Co Ltd チップ型電気素子及びそれを含む液晶表示モジュール
KR100708045B1 (ko) * 2001-09-05 2007-04-16 앰코 테크놀로지 코리아 주식회사 반도체패키지 및 그 제조 방법
JP2007134540A (ja) * 2005-11-11 2007-05-31 Murata Mfg Co Ltd 半導体装置およびその製造方法
WO2007096975A1 (ja) * 2006-02-24 2007-08-30 Fujitsu Limited 半導体装置
KR100779345B1 (ko) * 2001-08-17 2007-11-23 앰코 테크놀로지 코리아 주식회사 반도체패키지
JP2008016785A (ja) * 2006-06-30 2008-01-24 Taiyo Yuden Co Ltd 樹脂封止回路装置
JP2010087294A (ja) * 2008-09-30 2010-04-15 Toshiba Corp プリント回路板及びプリント回路板を備えた電子機器
KR101011199B1 (ko) * 2007-11-01 2011-01-26 파나소닉 주식회사 실장 구조체
JP2011029223A (ja) * 2009-07-21 2011-02-10 Murata Mfg Co Ltd 樹脂封止型電子部品の製造方法及び樹脂封止型電子部品の集合体
US8089146B2 (en) 2006-02-28 2012-01-03 Fujitsu Limited Semiconductor device and heat radiation member
JP2012129355A (ja) * 2010-12-15 2012-07-05 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法
KR101197656B1 (ko) 2009-12-07 2012-11-07 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치와 그 제조 방법
JP2014017371A (ja) * 2012-07-09 2014-01-30 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置製造方法
JP2017037980A (ja) * 2015-08-11 2017-02-16 株式会社ソシオネクスト 半導体装置、半導体装置の製造方法及び電子装置
WO2018164160A1 (ja) * 2017-03-10 2018-09-13 株式会社村田製作所 モジュール
WO2020162417A1 (ja) * 2019-02-04 2020-08-13 株式会社ソニー・インタラクティブエンタテインメント 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法
WO2023103470A1 (zh) * 2021-12-10 2023-06-15 云南中宣液态金属科技有限公司 一种用于芯片散热的液态金属封装结构

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19960246A1 (de) * 1999-12-14 2001-07-05 Infineon Technologies Ag Gehäuseanordnung eines Halbleiterbausteins
US6573592B2 (en) * 2001-08-21 2003-06-03 Micron Technology, Inc. Semiconductor die packages with standard ball grid array footprint and method for assembling the same
US6882041B1 (en) * 2002-02-05 2005-04-19 Altera Corporation Thermally enhanced metal capped BGA package
US6680530B1 (en) * 2002-08-12 2004-01-20 International Business Machines Corporation Multi-step transmission line for multilayer packaging
DE10238523B4 (de) * 2002-08-22 2014-10-02 Epcos Ag Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung
JP2004253738A (ja) * 2003-02-21 2004-09-09 Toshiba Corp パッケージ基板及びフリップチップ型半導体装置
WO2005004200A2 (en) * 2003-06-25 2005-01-13 Advanced Interconnect Technologies Limited Lead frame routed chip pads for semiconductor packages
US6888238B1 (en) * 2003-07-09 2005-05-03 Altera Corporation Low warpage flip chip package solution-channel heat spreader
TWI229928B (en) * 2003-08-19 2005-03-21 Advanced Semiconductor Eng Semiconductor package structure
JP3819901B2 (ja) * 2003-12-25 2006-09-13 松下電器産業株式会社 半導体装置及びそれを用いた電子機器
JP3809168B2 (ja) * 2004-02-03 2006-08-16 株式会社東芝 半導体モジュール
JP3999759B2 (ja) * 2004-04-02 2007-10-31 富士通株式会社 基板及び電子機器
DE102004020204A1 (de) * 2004-04-22 2005-11-10 Epcos Ag Verkapseltes elektrisches Bauelement und Verfahren zur Herstellung
US7608789B2 (en) * 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
DE102005008511B4 (de) 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
US7518224B2 (en) * 2005-05-16 2009-04-14 Stats Chippac Ltd. Offset integrated circuit package-on-package stacking system
US7746656B2 (en) * 2005-05-16 2010-06-29 Stats Chippac Ltd. Offset integrated circuit package-on-package stacking system
US20060278170A1 (en) * 2005-06-10 2006-12-14 Wildlife Solutions, Inc. Method for removing unwanted animals and their attractants
JP5123664B2 (ja) * 2005-09-28 2013-01-23 スパンション エルエルシー 半導体装置およびその製造方法
CN100373599C (zh) * 2005-09-29 2008-03-05 威盛电子股份有限公司 无凸块式芯片封装体
DE102005050398A1 (de) * 2005-10-20 2007-04-26 Epcos Ag Gehäuse mit Hohlraum für ein mechanisch empfindliches elektronisches Bauelement und Verfahren zur Herstellung
DE102005053765B4 (de) 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
DE102005053767B4 (de) 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
KR100718169B1 (ko) * 2006-01-12 2007-05-15 한국과학기술원 니켈 표면 처리된 전자부품과 무전해 니켈 표면 처리된전자부품의 접합방법
US20080001282A1 (en) * 2006-06-30 2008-01-03 Mitul Modi Microelectronic assembly having a periphery seal around a thermal interface material
EP1914798A3 (en) * 2006-10-18 2009-07-29 Panasonic Corporation Semiconductor Mounting Substrate and Method for Manufacturing the Same
US8163600B2 (en) * 2006-12-28 2012-04-24 Stats Chippac Ltd. Bridge stack integrated circuit package-on-package system
KR100850897B1 (ko) * 2007-01-22 2008-08-07 주식회사 네패스 수동소자가 매립된 반도체 장치 및 그 제조 방법
JP2009117767A (ja) * 2007-11-09 2009-05-28 Shinko Electric Ind Co Ltd 半導体装置の製造方法及びそれにより製造した半導体装置
JP4492695B2 (ja) * 2007-12-24 2010-06-30 株式会社デンソー 半導体モジュールの実装構造
US7906376B2 (en) * 2008-06-30 2011-03-15 Intel Corporation Magnetic particle-based composite materials for semiconductor packages
US8415809B2 (en) * 2008-07-02 2013-04-09 Altera Corporation Flip chip overmold package
JP4555369B2 (ja) * 2008-08-13 2010-09-29 富士通メディアデバイス株式会社 電子部品モジュール及びその製造方法
GB2477492B (en) * 2010-01-27 2014-04-09 Thales Holdings Uk Plc Integrated circuit package
JP2011176112A (ja) * 2010-02-24 2011-09-08 Renesas Electronics Corp 半導体集積回路及びその製造方法
US8217500B1 (en) * 2010-05-07 2012-07-10 Altera Corporation Semiconductor device package
TWI401773B (zh) * 2010-05-14 2013-07-11 南茂科技股份有限公司 晶片封裝裝置及其製造方法
TW201225238A (en) * 2010-07-26 2012-06-16 Unisem Mauritius Holdings Ltd Lead frame routed chip pads for semiconductor packages
US8624359B2 (en) * 2011-10-05 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level chip scale package and method of manufacturing the same
US9287194B2 (en) * 2013-03-06 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging devices and methods for semiconductor devices
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement
US9355966B2 (en) * 2013-07-08 2016-05-31 Avago Technologies General Ip (Singapore) Pte. Ltd. Substrate warpage control using external frame stiffener
CN104575584B (zh) 2013-10-23 2018-11-30 钰创科技股份有限公司 具有嵌入式内存的系统级封装内存模块
US20150262902A1 (en) * 2014-03-12 2015-09-17 Invensas Corporation Integrated circuits protected by substrates with cavities, and methods of manufacture
CN204993854U (zh) * 2015-06-24 2016-01-20 瑞声声学科技(深圳)有限公司 Mems麦克风
FR3055943B1 (fr) * 2016-09-15 2020-10-02 Valeo Vision Cablage d'une source lumineuse de haute resolution
US10217649B2 (en) * 2017-06-09 2019-02-26 Advanced Semiconductor Engineering, Inc. Semiconductor device package having an underfill barrier
US10541153B2 (en) * 2017-08-03 2020-01-21 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10804115B2 (en) 2017-08-03 2020-10-13 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10541209B2 (en) 2017-08-03 2020-01-21 General Electric Company Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof
JP6645487B2 (ja) * 2017-10-30 2020-02-14 セイコーエプソン株式会社 プリント回路板
KR102837779B1 (ko) * 2021-09-17 2025-07-22 삼성전자주식회사 반도체 패키지

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846098A (ja) 1994-07-22 1996-02-16 Internatl Business Mach Corp <Ibm> 直接的熱伝導路を形成する装置および方法
US5872051A (en) * 1995-08-02 1999-02-16 International Business Machines Corporation Process for transferring material to semiconductor chip conductive pads using a transfer substrate
JP3724979B2 (ja) * 1999-04-27 2005-12-07 富士通株式会社 半導体装置

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100779345B1 (ko) * 2001-08-17 2007-11-23 앰코 테크놀로지 코리아 주식회사 반도체패키지
KR100708045B1 (ko) * 2001-09-05 2007-04-16 앰코 테크놀로지 코리아 주식회사 반도체패키지 및 그 제조 방법
KR100443399B1 (ko) * 2001-10-25 2004-08-09 삼성전자주식회사 보이드가 형성된 열 매개 물질을 갖는 반도체 패키지
US6998532B2 (en) 2002-12-24 2006-02-14 Matsushita Electric Industrial Co., Ltd. Electronic component-built-in module
WO2004060034A1 (ja) * 2002-12-24 2004-07-15 Matsushita Electric Industrial Co., Ltd. 電子部品内蔵モジュール
JP2007049142A (ja) * 2005-08-03 2007-02-22 Samsung Electronics Co Ltd チップ型電気素子及びそれを含む液晶表示モジュール
JP2007134540A (ja) * 2005-11-11 2007-05-31 Murata Mfg Co Ltd 半導体装置およびその製造方法
WO2007096975A1 (ja) * 2006-02-24 2007-08-30 Fujitsu Limited 半導体装置
JPWO2007096975A1 (ja) * 2006-02-24 2009-07-09 富士通株式会社 半導体装置
US7834443B2 (en) 2006-02-24 2010-11-16 Fujitsu Limited Semiconductor device with molten metal preventing member
JP4874325B2 (ja) * 2006-02-24 2012-02-15 富士通株式会社 半導体装置
US8089146B2 (en) 2006-02-28 2012-01-03 Fujitsu Limited Semiconductor device and heat radiation member
JP2008016785A (ja) * 2006-06-30 2008-01-24 Taiyo Yuden Co Ltd 樹脂封止回路装置
US8410377B2 (en) 2007-11-01 2013-04-02 Panasonic Corporation Mounted structure
KR101011199B1 (ko) * 2007-11-01 2011-01-26 파나소닉 주식회사 실장 구조체
US7916496B2 (en) 2008-09-30 2011-03-29 Kabushiki Kaisha Toshiba Printed circuit board and electronic apparatus having printed circuit board
JP2010087294A (ja) * 2008-09-30 2010-04-15 Toshiba Corp プリント回路板及びプリント回路板を備えた電子機器
JP2011029223A (ja) * 2009-07-21 2011-02-10 Murata Mfg Co Ltd 樹脂封止型電子部品の製造方法及び樹脂封止型電子部品の集合体
KR101197656B1 (ko) 2009-12-07 2012-11-07 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치와 그 제조 방법
JP2012129355A (ja) * 2010-12-15 2012-07-05 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法
JP2014017371A (ja) * 2012-07-09 2014-01-30 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置製造方法
JP2017037980A (ja) * 2015-08-11 2017-02-16 株式会社ソシオネクスト 半導体装置、半導体装置の製造方法及び電子装置
WO2018164160A1 (ja) * 2017-03-10 2018-09-13 株式会社村田製作所 モジュール
WO2020162417A1 (ja) * 2019-02-04 2020-08-13 株式会社ソニー・インタラクティブエンタテインメント 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法
JPWO2020162417A1 (ja) * 2019-02-04 2021-12-09 株式会社ソニー・インタラクティブエンタテインメント 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法
JP7311540B2 (ja) 2019-02-04 2023-07-19 株式会社ソニー・インタラクティブエンタテインメント 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法
JP2023118943A (ja) * 2019-02-04 2023-08-25 株式会社ソニー・インタラクティブエンタテインメント 半導体装置、絶縁シート、及び半導体装置の製造方法
WO2023103470A1 (zh) * 2021-12-10 2023-06-15 云南中宣液态金属科技有限公司 一种用于芯片散热的液态金属封装结构
KR20240001060U (ko) * 2021-12-10 2024-06-21 윈난 중수안 리퀴드 메탈 테크놀로지 컴퍼니 리미티드 칩 방열을 위한 액체 금속 패키징 구조
KR200500059Y1 (ko) 2021-12-10 2026-02-13 윈난 중수안 리퀴드 메탈 테크놀로지 컴퍼니 리미티드 칩 방열을 위한 액체 금속 패키징 구조

Also Published As

Publication number Publication date
KR20010091916A (ko) 2001-10-23
US6433412B2 (en) 2002-08-13
TW498522B (en) 2002-08-11
US20010050428A1 (en) 2001-12-13

Similar Documents

Publication Publication Date Title
JP2001267473A (ja) 半導体装置およびその製造方法
JP5259560B2 (ja) 半導体装置
JP4790157B2 (ja) 半導体装置
TWI277187B (en) Semiconductor device and manufacturing method for the same
JP3813797B2 (ja) 半導体装置の製造方法
KR100443399B1 (ko) 보이드가 형성된 열 매개 물질을 갖는 반도체 패키지
KR20080083533A (ko) 플립-칩 방식의 적층형 파워 모듈 및 그 파워 모듈의제조방법
JP2002353398A (ja) 半導体装置
JP2007109790A (ja) フリップチップ型半導体装置
JPH08330355A (ja) 半導体装置
JP4494249B2 (ja) 半導体装置
JP2002026073A (ja) 半導体装置およびその製造方法
JPH10256413A (ja) 半導体パッケージ
JP5297445B2 (ja) 半導体装置
TW202524701A (zh) 封裝結構及其製備方法
JP2008021712A (ja) 半導体モジュールならびにその製造方法
JP2008091954A (ja) 半導体装置の製造方法
JP2008103395A (ja) 半導体モジュール及びその製造方法
JP2001077299A (ja) 半導体装置およびその製造方法、回路基板ならびに電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040302

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040302

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040820

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051011

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051212

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060815