TWI401773B - 晶片封裝裝置及其製造方法 - Google Patents

晶片封裝裝置及其製造方法 Download PDF

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TWI401773B
TWI401773B TW099115394A TW99115394A TWI401773B TW I401773 B TWI401773 B TW I401773B TW 099115394 A TW099115394 A TW 099115394A TW 99115394 A TW99115394 A TW 99115394A TW I401773 B TWI401773 B TW I401773B
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wafer
adhesive layer
carrier
chip
wire
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TW099115394A
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TW201140772A (en
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Han Cheng Hsu
Ting Chang Yeh
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Chipmos Technologies Inc
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Description

晶片封裝裝置及其製造方法
本發明係關於一種晶片封裝裝置及其製造方法。
一般而言，半導體封裝係指將一半導體晶粒以一封裝體包覆，並在封裝體外提供電接點，以連接外部裝置或電路，而其中之球閘陣列構裝技術(Ball grid array(BGA)package technology)常用於構裝高密度及高接腳數之半導體晶粒。在一傳統的BGA封裝中，半導體晶粒放置於電路基板上，半導體晶粒以導線引線搭接(wire bond)至電路基板，而封裝體將半導體晶粒及導線包覆。錫球形成於電路基板之背面，以電性連接外部裝置與半導體晶粒。
當半導體晶粒上之電路進行操作時，半導體晶粒會產生熱。而在傳統的BGA封裝中，半導體晶粒為不易導熱之封裝體所包覆，故半導體晶粒產生之熱不易發散。
另，有些BGA封裝在封裝體內部設置散熱片，期以促進半導體晶粒之散熱。然而，由於封裝體導熱能力差，而散熱片又為封裝體所包覆，從而使其整體散熱效果改善有限。
此外，美國專利第6,458,626號揭示一種封裝結構，其係將散熱件表面外露，藉以提高散熱效率。該封裝結構係以封裝膠體完全包覆介面層/散熱件及半導體晶片後，進行切割。切割完畢後，利用介面層將散熱件上方之封裝化合物移除，即可露出散熱件。然而，此專利揭示之方法複雜，且在進行切割步驟時，因切割刀具需切割金屬製之散熱件，而易損耗切割刀具。再者，金屬製之散熱件不易切割平整，造成產品品質不佳。又，在形成封裝膠體之製程中，由於封裝膠體完全包覆介面層/散熱件，故易使介面層因封裝壓力而黏附散熱件過緊，造成介面層與其上封裝化合物不易移除的情形發生。
有鑑於前述現有半導體封裝上散熱之缺失，故需要一種新的半導體散熱設計。
本發明之一目的係提供一種晶片封裝裝置及其製造方法。晶片封裝裝置包含一散熱件，散熱件可充分暴露於晶片封裝裝置之封裝外，使晶片封裝裝置具良好的散熱效率。而本發明揭示之一種晶片封裝裝置之製造方法可容易製造出將散熱件外露之封裝結構，無須於封裝後切割散熱件，故製程簡單、良率高。
根據上述目的，本發明一實施例揭示一種晶片封裝裝置，其包含一載體、一晶片、至少一導線、一黏著層、一散熱件及一封膠體。載體包括至少一晶片接合區及至少一電接點，其中該至少一電接點沿該至少一晶片接合區外周設置。晶片具有一主動面及一被動面。晶片包括至少一銲墊，其係設置於主動面上。晶片係以被動面面向載體，設置於該載體之該至少一晶片接合區上。至少一導線連接該至少一銲墊及該至少一電接點。黏著層覆蓋晶片之主動面及包覆至少一導線中在相應之至少一銲墊上延伸之部分。散熱件固定於黏著層上，且覆蓋該晶片。封膠體部份密封該晶片、該黏著層與該散熱件之周側，並於該封膠體上形成一凹陷之開口，以曝露出該散熱件表面。
本發明一實施例揭示一種晶片封裝裝置之製造方法，其包含下列步驟：提供一載體，其中該載體包含至少一晶片接合區及至少一電接點；提供至少一晶片，該晶片包括一主動面及一被動面，該晶片之主動面上形成有至少一銲墊，並以該晶片之被動面固定於該載體之該至少一晶片接合區上；以一導線連接該至少一銲墊及該至少一電接點；以一黏著層，覆蓋該晶片之主動面，其中該黏著層包覆該至少一導線中在該至少一銲墊上延伸之部分；固定一散熱組件於該黏著層上，其中該散熱組件包含一散熱件及一覆蓋件，該散熱件係位於該晶片及該覆蓋件之間；形成一封膠體，其係沿該晶片、該黏著層與該散熱組件之周側密封設置，並於該封膠體之頂面曝露出該覆蓋件；以及移除該覆蓋件。
上文已經概略地敍述本揭露之技術特徵及優點，俾使下文之本揭露詳細描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其它技術特徵及優點將描述於下文。本揭露所屬技術領域中具有通常知識者應可瞭解，下文揭示之概念與特定實施例可作為基礎而相當輕易地予以修改或設計其它結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應可瞭解，這類等效的建構並無法脫離後附之申請專利範圍所提出之本揭露的精神和範圍。
圖1顯示本發明一實施例之一種晶片封裝裝置1之截面示意圖。參照圖1所示，晶片封裝裝置1可包含一載體11、一晶片14、至少一導線16、一黏著層17、一散熱件18及一封膠體19，其中晶片14設置於載體11上；黏著層17設置於晶片14上；散熱件18設置於黏著層17上；導線16電性連接晶片14與載體11且部分為黏著層17所包覆；而封膠體19部份密封晶片14、黏著層17與散熱件18堆疊結構之周側區域，並暴露散熱件18之表面24。
詳言之，載體11可包括至少一晶片接合區25及至少一電接點12，其中該至少一電接點12設置於至少一晶片接合區25之周側。在一實施例中，載體11包含複數個電接點12，其中該些電接點12係沿該至少一晶片接合區25之外周設置。載體11可為印刷電路板或為FR-4基板、FR-5基板、BT基板或其他類似載板者。
晶片14包含至少一銲墊15、一主動面26及一被動面27，其中至少一銲墊15設置於主動面26上。晶片14以其被動面27面向載體11之方式，利用黏膠13黏合於載體11之相應之至少一晶片接合區25上，其中黏膠13可包含環氧樹脂(epoxy)、銀膠或B階(B-Stage)樹脂。
晶片14之至少一銲墊15與在載體11上相應之至少一電接點12以導線16連接。
黏著層17覆蓋晶片14之主動面26，並包覆著至少一導線16在相應之至少一銲墊15上延伸之部分。在一實施例中，該黏著層17包含薄膜覆蓋銲線(FOW；Film Over Wire)膠材。
散熱件18固定於黏著層17上，並覆蓋晶片14。在本實施例中，散熱件18之表面積與晶片14之表面積相當。另，散熱件18之材質可為金屬或矽。又，散熱件18具有一固定於黏著層17之表面23及相對於表面23之另一表面24，其中表面23可較表面24為粗糙，以增加散熱件18與黏著層17間之接著強度。
封膠體19部份密封晶片14、黏著層17與散熱件18之周側。封膠體19上形成一凹陷之開口20，其中開口20暴露散熱件18之整個表面24。
載體11上可另形成複數個錫球21，其中錫球21與晶片14係相對設置。透過錫球21，晶片14得與晶片封裝裝置1外之裝置或電路電性連接。
圖2至圖6係製程流程示意圖，其例示本發明一實施例之晶片封裝裝置1之製造方法。參照圖2所示，晶片封裝裝置1之製造方法首先提供一載體11。載體11包含至少一晶片接合區25及至少一電接點12，其中該至少一電接點12設置於至少一晶片接合區25之周側區域。接著，提供至少一晶片14。晶片14包括至少一銲墊15、一主動面26及一被動面27，其中至少一銲墊15設置於主動面26上。然後，以晶片14之被動面27朝向載體11之方式，利用黏膠13，將晶片14固定於載體11上相應之至少一晶片接合區25。之後，利用至少一導線16，相應地連接晶片14上之銲墊15與載體11上之電接點12。
參照圖3所示，將一黏著層17覆蓋晶片14之主動面26，其中黏著層17包覆至少一導線16中在相應之至少一銲墊15上延伸之部分。
參照圖4所示，將一散熱組件28固定於黏著層17上，其中散熱組件28包含一散熱件18及一覆蓋件30。在一實施例中，散熱件18、黏著層17、覆蓋件30與晶片14之大小可相當。
參照圖5所示，於晶片14、黏著層17與散熱組件28之周側形成一封膠體19，以密封晶片14、黏著層17與散熱組件28之周側，並於封膠體19之頂面暴露出覆蓋件30。
參照圖6所示，經切割後，獲得多數個獨立且頂部為覆蓋件30所覆蓋之晶片封裝裝置1，最後再移除覆蓋件30。覆蓋件30為一可耐封膠體19成型時高溫之膠膜。覆蓋件30可為一熱釋放膜(thermal release film)，而覆蓋件30可以加熱方式移除。此外，覆蓋件30亦可為利用撕除方式移除之膠膜。
圖7至圖9係製程流程示意圖，其例示本發明一實施例之散熱組件28之製造方法。參照圖7所示，散熱組件28之製造方法首先提供一晶圓31。然後黏貼一覆蓋片32於晶圓31之表面33上。
參照圖8所示，將晶圓31薄化，以獲得一薄化晶圓31'。然後，以化學蝕刻或離子蝕刻製程，將晶圓31'之表面34粗化或在表面34上形成若干窩孔(dimple)。
參照圖9所示，最後切割薄化晶圓31'與覆蓋片32之組合，以獲得複數個散熱組件28。
圖10顯示本發明另一實施例之一種晶片封裝裝置3之截面示意圖。參照圖10所示，晶片封裝裝置3可包含一載體11、一晶片14、至少一導線16、一黏著層17、一散熱件38及一封膠體39。晶片14以其被動面27黏著於載體11上之晶片接合區25之方式固定，並以導線16相應地連接銲墊15與位於晶片接合區25周側之電接點12。黏著層17覆蓋晶片14之主動面26且包覆在相應之銲墊15上延伸之部分導線16。散熱件38固定並覆蓋於黏著層17上。封膠體39部份密封晶片14、黏著層17與散熱件38堆疊結構之周側區域，並暴露散熱件38之表面40。在本實施例中，散熱件38之表面積大於晶片14之表面積。散熱件38之材質可為金屬或矽。又，散熱件38具有一固定於黏著層17之表面41及相對於表面41之另一表面40，其中表面41可較表面40為粗糙，以增加散熱件38與黏著層17間之接著強度。
封膠體39部份密封晶片14、黏著層17與散熱件38之周側。封膠體39上形成一凹陷之開口20，其中開口20暴露散熱件38之整個表面40。
載體11上可另形成複數個錫球21，其中錫球21與晶片14係相對設置。透過錫球21，晶片14得與晶片封裝裝置3外之裝置或電路電性連接。
綜上，本發明揭示一種晶片封裝裝置，其包含一散熱件。散熱件可充分暴露於晶片封裝裝置之封裝外，因此晶片封裝裝置具良好的散熱效率。此外，晶片封裝裝置另包含一黏著層，黏著層包覆部分連接晶片與載體之導線。本發明另揭示一種晶片封裝裝置之製造方法，該方法利用覆蓋件遮蓋散熱件，之後在晶片、黏著層、散熱件與覆蓋件之周側形成一封膠體，如此可容易製造出將散熱件外露之封裝結構，而無須切割散熱件。
本揭露之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本揭露之教示及揭示而作種種不背離本揭露精神之替換及修飾。因此，本揭露之保護範圍應不限於實施例所揭示者，而應包括各種不背離本揭露之替換及修飾，並為以下之申請專利範圍所涵蓋。
1、3．．．晶片封裝裝置
11．．．載體
12．．．電接點
13．．．黏膠
14．．．晶片
15．．．銲墊
16．．．導線
17．．．黏著層
18．．．散熱件
19、39．．．封膠體
20．．．開口
21．．．錫球
23、24．．．表面
25．．．晶片接合區
26．．．主動面
27．．．被動面
28．．．散熱組件
30．．．覆蓋件
31．．．晶圓
31'．．．薄化晶圓
32．．．覆蓋片
33、34．．．表面
38．．．散熱件
40、41．．．表面
圖1顯示本發明一實施例之一種晶片封裝裝置之截面示意圖；
圖2至圖6係製程流程示意圖，其例示本發明一實施例之晶片封裝裝置之製造方法；
圖7至圖9係製程流程示意圖，其例示本發明一實施例之散熱組件之製造方法；及
圖10顯示本發明另一實施例之一種晶片封裝裝置之截面示意圖。
1．．．晶片封裝裝置
11．．．載體
12．．．電接點
13．．．黏膠
14．．．晶片
15．．．銲墊
16．．．導線
17．．．黏著層
18．．．散熱件
19．．．封膠體
20．．．開口
21．．．錫球
23、24．．．表面
25．．．晶片接合區
26．．．主動面
27．．．被動面

Claims (10)

  1. 一種晶片封裝裝置，包含：一載體，包括至少一晶片接合區及至少一電接點，該至少一電接點沿該晶片接合區外周設置；一晶片，具有一主動面及一被動面，該晶片包括至少一銲墊，該至少一銲墊設置於該主動面上，該晶片以該被動面面向該載體，設置於該載體之該至少一晶片接合區上；至少一導線，連接該至少一銲墊及該至少一電接點；一黏著層，覆蓋該晶片之該主動面及包覆該至少一導線中在該至少一銲墊上延伸之部分；一散熱件，固定於該黏著層上，且覆蓋該晶片，其中該散熱件固定於該黏著層之表面較外露於該開口之另一表面為粗糙，該粗糙表面相對應於該至少一導線；以及一封膠體，部份密封該晶片、該黏著層與該散熱件之周側，並於該封膠體上形成一凹陷之開口以曝露出該散熱件表面。
  2. 根據請求項1所述之晶片封裝裝置，其中該黏著層為薄膜覆蓋銲線(FOW；Film Over Wire)膠材。
  3. 根據請求項1所述之晶片封裝裝置，其中該散熱件之表面積大於該晶片之表面積。
  4. 一種晶片封裝裝置之製造方法，包含下列步驟：提供一載體，其中該載體包含至少一晶片接合區及至少一電接點；提供至少一晶片，其中該晶片包括一主動面及一被動面，該晶片之該主動面上形成有至少一銲墊，該晶片以該 被動面面向該載體，固定於該載體之該至少一晶片接合區上；以一導線連接該至少一銲墊及該至少一電接點；以一黏著層，覆蓋該晶片之該主動面，其中該黏著層包覆該至少一導線中在該至少一銲墊上延伸之部分；固定一散熱組件於該黏著層上，其中該散熱組件包含一散熱件及一覆蓋件，該散熱件係位於該晶片及該覆蓋件之間；黏貼一覆蓋片於一晶圓，其中該覆蓋片覆蓋該晶圓之一表面，並將該晶圓之一表面粗化或在該表面上形成若干窩孔，該表面相對應於該導線；形成一封膠體，其係沿該晶片、該黏著層與該散熱組件之周側密封設置，且於該封膠體之頂面曝露出該覆蓋件；以及移除該覆蓋件。
  5. 根據請求項4所述之製造方法，其中該散熱件之材料係矽，而該製造方法更包含下列步驟：薄化該晶圓；以及切割該覆蓋片與該晶圓之組合，以獲得複數個該散熱組件。
  6. 根據請求項5所述之製造方法，其更包含粗化該晶圓上未被該覆蓋片覆蓋之另一表面。
  7. 根據請求項4所述之製造方法，其中移除該覆蓋件之步驟包含以加熱或撕除之方式將該覆蓋件移除。
  8. 根據請求項4所述之製造方法，其中在移除該覆蓋件後，於 該封膠體之頂面形成一開口以曝露出該散熱件表面。
  9. 根據請求項4所述之製造方法，其中黏著層為薄膜覆蓋銲線(FOW；Film Over Wire)之膠材。
  10. 根據請求項4所述之製造方法，其中該散熱件之材料係金屬。
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