JP4881044B2 - 積層型半導体装置の製造方法 - Google Patents
積層型半導体装置の製造方法 Download PDFInfo
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- JP4881044B2 JP4881044B2 JP2006073142A JP2006073142A JP4881044B2 JP 4881044 B2 JP4881044 B2 JP 4881044B2 JP 2006073142 A JP2006073142 A JP 2006073142A JP 2006073142 A JP2006073142 A JP 2006073142A JP 4881044 B2 JP4881044 B2 JP 4881044B2
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
Claims (2)
- 回路基材上に第1の半導体素子を接着する工程と、
前記回路基材の電極部と前記第1の半導体素子とを第1のボンディングワイヤを介して電気的に接続する工程と、
前記第1の半導体素子上に厚さが50μm以上の絶縁性接着剤層を介して第2の半導体素子を、前記第1のボンディングワイヤの前記第1の半導体素子との接続側端部を前記絶縁性接着剤層内に取り込みつつ接着する工程と、
前記回路基材の電極部と前記第2の半導体素子とを第2のボンディングワイヤを介して電気的に接続する工程と、
前記第1および第2の半導体素子を前記第1および第2のボンディングワイヤと共に封止樹脂で封止する工程とを具備し、
前記絶縁性接着剤層は、ガラス転移温度が135℃以上で、かつガラス転移温度以下の線膨張係数が100ppm以下であると共に、常温弾性率が500MPa以上2GPa以下である絶縁樹脂層からなることを特徴とする積層型半導体装置の製造方法。 - 請求項1記載の積層型半導体装置の製造方法において、
前記絶縁性接着剤層は前記第2の半導体素子の接着時温度における粘度が1kPa・s以上100kPa・s未満であることを特徴とする積層型半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006073142A JP4881044B2 (ja) | 2006-03-16 | 2006-03-16 | 積層型半導体装置の製造方法 |
US11/724,303 US7994620B2 (en) | 2006-03-16 | 2007-03-15 | Stacked semiconductor device |
KR1020070025370A KR100923596B1 (ko) | 2006-03-16 | 2007-03-15 | 적층형 반도체 장치 |
KR1020080120721A KR101164296B1 (ko) | 2006-03-16 | 2008-12-01 | 적층형 반도체 장치 |
US13/067,839 US8227296B2 (en) | 2006-03-16 | 2011-06-29 | Stacked semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006073142A JP4881044B2 (ja) | 2006-03-16 | 2006-03-16 | 積層型半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011179686A Division JP5571045B2 (ja) | 2011-08-19 | 2011-08-19 | 積層型半導体装置 |
Publications (2)
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JP2007250887A JP2007250887A (ja) | 2007-09-27 |
JP4881044B2 true JP4881044B2 (ja) | 2012-02-22 |
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JP2006073142A Active JP4881044B2 (ja) | 2006-03-16 | 2006-03-16 | 積層型半導体装置の製造方法 |
Country Status (3)
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US (2) | US7994620B2 (ja) |
JP (1) | JP4881044B2 (ja) |
KR (2) | KR100923596B1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100809701B1 (ko) * | 2006-09-05 | 2008-03-06 | 삼성전자주식회사 | 칩간 열전달 차단 스페이서를 포함하는 멀티칩 패키지 |
JP2011233782A (ja) * | 2010-04-28 | 2011-11-17 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
TWI401773B (zh) * | 2010-05-14 | 2013-07-11 | Chipmos Technologies Inc | 晶片封裝裝置及其製造方法 |
US8680686B2 (en) * | 2010-06-29 | 2014-03-25 | Spansion Llc | Method and system for thin multi chip stack package with film on wire and copper wire |
EP3848402A1 (en) | 2012-03-30 | 2021-07-14 | Sirrus, Inc. | Ink and coating formulations and polymerizable systems for producing the same |
CA2869112A1 (en) * | 2012-03-30 | 2013-10-03 | Bioformix Inc. | Composite and laminate articles and polymerizable systems for producing the same |
WO2013181600A2 (en) | 2012-06-01 | 2013-12-05 | Bioformix Inc. | Optical material and articles formed therefrom |
JP5425975B2 (ja) * | 2012-06-28 | 2014-02-26 | 日東電工株式会社 | 接着フィルム、半導体装置の製造方法及び半導体装置 |
JP5918664B2 (ja) | 2012-09-10 | 2016-05-18 | 株式会社東芝 | 積層型半導体装置の製造方法 |
EP2920231B1 (en) | 2012-11-16 | 2020-05-06 | Sirrus, Inc. | Plastics bonding systems and methods |
US10607910B2 (en) * | 2012-11-30 | 2020-03-31 | Sirrus, Inc. | Composite compositions for electronics applications |
CN104051411B (zh) | 2013-03-15 | 2018-08-28 | 台湾积体电路制造股份有限公司 | 叠层封装结构 |
US9768048B2 (en) * | 2013-03-15 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on-package structure |
US9334430B1 (en) | 2015-05-29 | 2016-05-10 | Sirrus, Inc. | Encapsulated polymerization initiators, polymerization systems and methods using the same |
US9217098B1 (en) | 2015-06-01 | 2015-12-22 | Sirrus, Inc. | Electroinitiated polymerization of compositions having a 1,1-disubstituted alkene compound |
US10658199B2 (en) * | 2016-08-23 | 2020-05-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11219984A (ja) | 1997-11-06 | 1999-08-10 | Sharp Corp | 半導体装置パッケージおよびその製造方法ならびにそのための回路基板 |
JP2001308262A (ja) | 2000-04-26 | 2001-11-02 | Mitsubishi Electric Corp | 樹脂封止bga型半導体装置 |
JP3913481B2 (ja) | 2001-01-24 | 2007-05-09 | シャープ株式会社 | 半導体装置および半導体装置の製造方法 |
TW540131B (en) * | 2001-03-21 | 2003-07-01 | Tomoegawa Paper Co Ltd | Mask sheet for assembly of semiconductor device and assembling method of semiconductor device |
JP2003218316A (ja) * | 2002-01-10 | 2003-07-31 | Ficta Technology Inc | マルチチップパッケージ構造及び製造方法 |
KR100704320B1 (ko) | 2002-02-06 | 2007-04-10 | 세키스이가가쿠 고교가부시키가이샤 | 수지 조성물 |
JP2003258034A (ja) * | 2002-03-06 | 2003-09-12 | Mitsubishi Electric Corp | 多層配線基体の製造方法および多層配線基体 |
JP3912223B2 (ja) | 2002-08-09 | 2007-05-09 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6833287B1 (en) * | 2003-06-16 | 2004-12-21 | St Assembly Test Services Inc. | System for semiconductor package with stacked dies |
US20050205981A1 (en) * | 2004-03-18 | 2005-09-22 | Kabushiki Kaisha Toshiba | Stacked electronic part |
JP4188337B2 (ja) * | 2004-05-20 | 2008-11-26 | 株式会社東芝 | 積層型電子部品の製造方法 |
US7629695B2 (en) * | 2004-05-20 | 2009-12-08 | Kabushiki Kaisha Toshiba | Stacked electronic component and manufacturing method thereof |
JP4559163B2 (ja) * | 2004-08-31 | 2010-10-06 | ルネサスエレクトロニクス株式会社 | 半導体装置用パッケージ基板およびその製造方法と半導体装置 |
TW200727446A (en) * | 2005-03-28 | 2007-07-16 | Toshiba Kk | Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method |
WO2006109506A1 (ja) * | 2005-03-30 | 2006-10-19 | Nippon Steel Chemical Co., Ltd. | 半導体装置の製造方法及び半導体装置 |
-
2006
- 2006-03-16 JP JP2006073142A patent/JP4881044B2/ja active Active
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2007
- 2007-03-15 US US11/724,303 patent/US7994620B2/en active Active
- 2007-03-15 KR KR1020070025370A patent/KR100923596B1/ko not_active IP Right Cessation
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2008
- 2008-12-01 KR KR1020080120721A patent/KR101164296B1/ko not_active IP Right Cessation
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- 2011-06-29 US US13/067,839 patent/US8227296B2/en active Active
Also Published As
Publication number | Publication date |
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US8227296B2 (en) | 2012-07-24 |
US20110263076A1 (en) | 2011-10-27 |
KR101164296B1 (ko) | 2012-07-09 |
KR20070094498A (ko) | 2007-09-20 |
KR100923596B1 (ko) | 2009-10-23 |
US20070222051A1 (en) | 2007-09-27 |
US7994620B2 (en) | 2011-08-09 |
KR20080110971A (ko) | 2008-12-22 |
JP2007250887A (ja) | 2007-09-27 |
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