TW540131B - Mask sheet for assembly of semiconductor device and assembling method of semiconductor device - Google Patents

Mask sheet for assembly of semiconductor device and assembling method of semiconductor device Download PDF

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Publication number
TW540131B
TW540131B TW91104471A TW91104471A TW540131B TW 540131 B TW540131 B TW 540131B TW 91104471 A TW91104471 A TW 91104471A TW 91104471 A TW91104471 A TW 91104471A TW 540131 B TW540131 B TW 540131B
Authority
TW
Taiwan
Prior art keywords
mask
semiconductor device
adhesive layer
assembling
lead frame
Prior art date
Application number
TW91104471A
Other languages
Chinese (zh)
Inventor
Katsuji Nakaba
Yuichi Moriya
Toshihiro Nakajima
Original Assignee
Tomoegawa Paper Co Ltd
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26611699&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW540131(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP2001081098A external-priority patent/JP4002736B2/en
Priority claimed from JP2001146606A external-priority patent/JP4002739B2/en
Application filed by Tomoegawa Paper Co Ltd filed Critical Tomoegawa Paper Co Ltd
Application granted granted Critical
Publication of TW540131B publication Critical patent/TW540131B/en

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

The invention provides a mask sheet capable of suppressing overflow of resin sealant and phenomenor of remaining adhesive in order to stably produce semiconductor package. Such a mask sheet can be peeledly adhered on lead frame. Also, at the conversion temperature of glass above 150 DEG C and line expansion coefficient 10-50 ppm/DEG C of refractory film at 150-200 DEG C, on which a adhesive layer comprising silicon is provided, the weight thereof may reduce at the rate of under 5%, at 180 DEG C, heating 1 hour. Preferably, the adhesive comprising silicon is based on polydimethylsiloxare, and can be based on polyalkylalkenylsiloxare and polykylhydrogensiloxane. At the time to employ such a mask sheet in semiconductor package. The mask sheet is firstly pressed and connected to the lead frame, and then peeled after the formation of a semiconductor device.

Description

540131 五、 發明說明 (4) [ 圖 式 簡 單 說明】 第 1 圖 係 本發明之半導體裝置組裝用遮罩的模式剖面 圖 〇 第 2 圖 係 當採用本發明之半導體裝置組裝用遮罩，而 製 造 QFN ^時所採用引線架之一例的槪略平面圖。 第 3(a) (f)圖係當採用本發明之半導體裝置組裝用 遮 罩 而 組 裝QFN方法之一例的步驟圖。 [ 實 施 發 明 較佳態樣】 如 第 1 圖 所示，本發明之半導體裝置組裝用遮罩10 ， 係在 耐 熱 薄膜11的一面上，具有採用矽系黏著劑而 形 成 的 黏 著 劑層1 2。 耐 熱 薄 膜 11在爲使將遮罩1 〇貼附於引線架上時，或 從 引 線 架 上 剝離時的處理上較爲容易，最好具柔軟性。 本 發 明 中 耐熱薄膜係採用玻璃轉化溫度（Tg)在15 0°c 以 上 且 1 ： 5 0〜2 0 0 °C中的線膨脹係數爲1 0〜5 0 p p m / °C 者 〇 當 製 作 QFN等半導體裝置時，遮罩在晶片黏結步 驟 Λ 打 線 接 合步驟及樹脂封裝步驟等之中，暴露於1 5 0 1 8 0 °C的環境中，當耐熱薄膜在玻璃轉化溫度Tg以 上 時 ， 因 爲 線膨脹係數將急遽增加，因此與由金屬所構 成 引 線 架 問 的熱膨脹差將變大。此情況下，當回復至室 溫 時 將 因 耐熱薄膜與引線架間的熱膨脹差而產生翹曲 亦 因 此 原 因，在晶片黏結步驟之後，將產生翹曲，且 在 後 續 步 驟 的樹脂封裝步驟中，便無法將引線架設定於 構 模 模 具 的 定位栓上，而將產生位置偏移的不良問題。 -6- 540131 五、發明說明（5) 所以，耐熱薄膜的T g必須在1 5 0 °C以上，最好在 1 8 0 °C以上。此外，耐熱薄膜在1 5 0〜2 0 0 °C中的線膨脹 係數10〜50ppm/°C，尤以在15〜40ρρηι广C爲佳。符合 該等耐熱條件的具體耐熱薄膜，可舉例如聚醯亞胺、聚 醯胺、聚醚碾、聚苯撐硫醚、聚醚酮、聚醚醚酮、二乙 醯纖維素、聚醚醯亞胺等薄膜。 本發明之耐熱薄膜的線膨脹係數可依如下求得。換句 話說，將薄膜在200 °C下加熱1小時之後，將經加熱後 的耐熱薄膜切成5 x25mm，並安裝於TMA(Thermal Mechanical Analyzer，真空理工公司產製；TM9300)上 。其次，依荷重lg測量當依3°C /min的昇溫速度，從 15 0°C昇溫至20(TC時的樣品延伸，然後再依下式求取。 線膨脹係數4L/L · At △ L::樣本延伸長度（2〇(TC時的長度-150°C時的長度）； L :樣本的原長度；540131 V. Description of the invention (4) [Brief description of the drawings] The first diagram is a schematic cross-sectional view of a mask for assembling a semiconductor device of the present invention. The second diagram is manufactured using the mask for assembling a semiconductor device of the present invention. A schematic plan view of an example of a lead frame used in QFN. Figure 3 (a) (f) is a step diagram of an example of a method for assembling a QFN when a mask for assembling a semiconductor device according to the present invention is used. [A preferred embodiment of the invention] As shown in FIG. 1, the mask 10 for assembling a semiconductor device of the present invention is attached to one side of the heat-resistant film 11 and has an adhesive layer 12 formed by using a silicon-based adhesive. The heat-resistant thin film 11 is easier to handle when the mask 10 is attached to the lead frame, or when it is peeled from the lead frame, and it is desirable to have flexibility. In the present invention, the heat-resistant film uses a glass transition temperature (Tg) of 150 ° C or more and a linear expansion coefficient of 1 to 50 to 2 0 0 ° C to 10 to 50 ppm / ° C. When making QFN When waiting for a semiconductor device, the mask is exposed to an environment of 15 0 180 ° C during the wafer bonding step Λ wire bonding step and the resin packaging step. When the heat-resistant film is above the glass transition temperature Tg, The expansion coefficient will increase sharply, so the thermal expansion difference from the lead frame made of metal will increase. In this case, when returning to room temperature, warpage will occur due to the thermal expansion difference between the heat-resistant film and the lead frame. Therefore, after the wafer bonding step, warpage will occur, and in the resin packaging step of the subsequent steps, Therefore, the lead frame cannot be set on the positioning pin of the molding die, and the problem of positional deviation will occur. -6- 540131 V. Description of the invention (5) Therefore, the T g of the heat-resistant film must be above 150 ° C, preferably above 180 ° C. In addition, the coefficient of linear expansion of the heat-resistant film at 150 to 200 ° C is 10 to 50 ppm / ° C, especially at 15 to 40 ρριη wide C. Specific heat-resistant films that meet these heat-resistant conditions can include, for example, polyimide, polyimide, polyether mill, polyphenylene sulfide, polyether ketone, polyether ether ketone, diethyl cellulose, and polyether. Films such as imine. The linear expansion coefficient of the heat-resistant film of the present invention can be obtained as follows. In other words, after heating the film at 200 ° C for 1 hour, the heated heat-resistant film was cut into 5 x 25 mm and installed on a TMA (Thermal Mechanical Analyzer, manufactured by Vacuum Technology Co., Ltd .; TM9300). Secondly, according to the load lg, when the temperature rise rate is 3 ° C / min, the sample is extended from 150 ° C to 20 ° C, and then calculated according to the following formula. Linear expansion coefficient 4L / L · At △ L :: sample extension length (20 (length at TC-150 ° C); L: original length of the sample;

At:測量溫度（200T： — 150T：、即 50°C )) 本發明之遮罩的黏著劑層係如同上述耐熱薄膜，對晶 片黏結步驟、打線接合步驟、樹脂封裝步驟中的熱過程 ，必須分解、劣化等變化較少，且具安定的黏著力。此 外，因爲遮罩可從引線架上剝離，因此耐熱薄膜對遮罩 之黏著劑層的黏著強度，便必須大於對樹脂封裝劑與引 線架的黏著強度。矽系黏著劑便符合此類要件，可形成 承受上述環境的黏著劑層。 所以，在本發明中，黏著劑層便採用矽系黏著劑而形 540131 五、發明說明（7) 在本發明中，黏著劑層最好採用含有平均分子量 1 0,000〜1，5 00,0 00之聚有機矽氧烷的矽系黏著劑而形 成的，且在1 5 0〜2 0 0 °C中的動彈性率，在1 . 0 X 1 04 P a 以上。尤以平均分子量在1〇0,0⑼〜1，000，000的範圍內 者爲佳。藉由將聚有機矽氧烷的平均分子量設定在上述 範圍內，便可提升黏著劑層在硬化後的剝離性’而可良 好的將遮罩從引線架上剝離開。所以，可防止遮罩剝離 後產生殘膠的現象發生。上述聚有機矽氧烷的含量係在 10重量％以上，最好在50重量％以上，尤以在90重量 %以上範圍者爲佳。當藉此製造QFN等半導體裝置之 際，便可防止打線接合不良、模溢料、殘膠等現象的發 生。 此外，當聚有機矽氧烷的平均分子量低於1 0,000之 情況時，黏著劑層在硬化後的凝聚力將降低’而可能在 從引線架上剝離後產生殘膠現象。反之，當聚有機矽氧 烷的平均分子量超過1，5 00,000之情況時，在調配矽系 黏著劑之際，聚有機矽氧烷對有機溶劑的溶解性將降 低，而可能無法獲得均勻的黏著劑，將較難在耐熱性基 材上均勻的形成黏著劑層。此外，當黏著劑層的厚度不 均勻之情況時，因爲遮罩與引線架問的密接力有部分將 降低，因此在樹脂封裝步驟中，便頗易引起模溢料現象 ，故屬較不佳狀況。 再者，當矽系黏著劑係採用含有聚烷基烯基矽氧烷與 聚烷基氫矽氧烷的加成反應型黏著劑之情況時，聚烷基 540131 五、發明說明（8) 氫矽氧烷的平均分子量最好爲5 0 0〜10, 〇〇〇。當聚烷基 氫矽氧烷的平均分子量小於5 0 0之情況時，在與主劑的 聚烷基烯基矽氧烷混合之際的反應性將過高，在將黏 著劑塗布於耐熱性基材之前便已進行硬化反應，而有較 難獲得均勻的黏著劑層之顧慮。反之，當聚烷基氫矽氧 烷的平均分子量大於1 0,000之情況時，與聚烷基烯基 矽氧烷間的反應性將過低，黏著劑在硬化後的凝聚力降 低，有在從引線架上剝離之際會產生殘膠現象的顧慮。 再者，當採用上述平均分子量的聚有機矽氧烷之情況 時，黏著劑層在1 5 0〜2 0 0 °C中的動彈性率必須在 1. 0xl04Pa以上。藉此在製造QFN等半導體裝置之際 的打線接合步驟中，黏著劑層較不易吸收超音波，結果 便可降低黏接於黏著劑層上的引線架震動，可防止打線 接合不良的現象發生。此外，當黏著劑層之150〜200°C 中的動彈性率低於1 . 〇x 1 〇4Pa之情況時，在打線接合 步驟中，黏著劑層將吸收超音波而使引線架震動，有產 生打線接合不良的顧慮。 藉由黏著劑層具有上述構造，即便在1 5 0〜2 0 0 °c 中，亦可充分突顯出遮罩對黏著劑層的貼附力，可抑 制在組裝QFN等半導體裝置之際，於樹脂封裝步驟中 產生引線架與遮罩的剝離，並可防止模溢料。 本發明中，矽系黏著劑就熱膨脹係數、熱傳率的調 整或表面皺紋、黏著性控制之目的，可含有無機或有 機塡料。無機塡料有如：粉碎氧化矽、熔融型氧化矽·、 -10- 540131 五、發明說明（9) 氧化銘、氧化鈦、氧化鈹、氧化鎂、碳酸鈣、氮化鈦 、氮化矽、氮化硼、硼化鈦、硼化鎢、碳化矽、碳化 鈦、碳化鉻、碳化鉬、雲母、氧化鋅、碳黑、氫氧化 鋁、氫氧化鈣、氫氧化鎂、三氧化銻或該等表面經三 甲基矽氧烷等施行處理過者。有機塡料則有如：聚醯 亞胺、聚醯胺、醯亞胺、聚醚醚酮、聚醚醯亞胺、聚 酯醯亞胺、尼龍、矽等。相對於構成黏著劑層的矽系 樹脂1 〇 〇重量份，該等塡料的調配量爲1〜5 0 0重量份 ，最好3〜200重量份，尤以5〜100重量份的範圍內 者爲佳。 將黏著層積層於耐熱薄膜上的方法，可使用將砂系 黏著劑溶液直接塗布於耐熱薄膜上之後，再使乾燥的 鑄造方法，以及先將矽系黏著劑溶液塗布於脫模型薄 膜上，將乾燥後形成黏著劑層，將此黏著劑層轉印於 耐熱薄膜上的層合方法。黏著劑層的厚度，一般設定 在1〜30μηι範圍內。 在黏著劑層上，配合需要可設置保護膜。保護膜僅 要具有脫模性便可，可採用任何薄膜。譬如使用聚酯 、聚乙烯、聚丙烯、聚對苯二甲酸乙二醇酯等薄膜， 以及使用對其表面利用矽樹脂或氟化物施行脫模處理的 薄膜。保護膜可在剛要製造半導體裝置前才剝離。 其次，針對本發明之組合半導體裝置的方法，所製造 的半導體裝置係採用QFN爲例，並參照圖式進行說明 。第2圖所示係從半導體元件搭載於引線架上之一端觀 -11- 540131 五、發明說明（10) 看時的槪略平面圖。第3(a)〜（f)圖所示係從第2圖所 不引線架製造QFN的方法步驟圖，乃將引線架沿第2 圖A〜A’線切割時的槪略剖面圖。 首先，準備第2圖所示的引線架20。引線架20係具 備有搭載著IC晶片等半導體元件的島狀複數半導體元 件搭載邰（晶片腳位）2 1 ’並沿各半導體元件搭載部2 1 的外緣配設多數的導線22。 其次，如第3圖所示，遮罩在貼附步驟中，於引線架 2 0卓面上’將本發明之遮罩1 〇，依黏著劑層在引線架 晒的方式貼附者。貼附可使用層合法等，譬如在加熱下 壓接’利用使矽系黏著劑硬化而所形成的黏著劑層，將 耐熱薄膜黏著於引線架上。 接著，如第3 (b)圖所示，在晶片黏結步驟中，從未貼 附遮罩1 0的一端，將IC晶片等的半導體元件3 〇，採 用晶片黏結劑（未圖式），搭載於引線架2 〇的半導體元 件搭載部2 1上。 然後’如第3(c)圖所示’在打線接合步驟中，將半導 體元件3 0與引線架20之導線22，利用金絲線等焊接 絲線3 1電性連接。 之後，如第3 (d)圖所示，在樹脂封裝步驟中，將製造 中途的半導體裝置（第3(c)圖）載置於模具內，採用封裝 樹脂（構模劑）並利用轉印模等，使用封裝樹脂40將半 導體元件3 0予以封裝。 燃後’如第3(e)圖所示，利用將遮罩10從引線架20 -12- 540131 五、發明說明（11) 予以剝離，便可形成配列著複數QFN5 0的QFN單元60。 最後，如第3(f)圖所示，將QFN單元60依每個 QFN50進行切害U，便可製造複數QFN。 [實施例] 以下，利用實施例更具體的說明本發明。惟本發明並 不僅限於該等實施例。 實施例1 (黏著劑層形成用塗布液的調配） 將聚烷基烯基矽氧烷與聚烷基氫矽氧烷的混合液 (X4 0-3 1 0 3、信越化學公司產製），及白金觸媒溶液 (PL50T、信越化學公司產製），依重量比100:1比率進 行混合。 (遮罩之製作） 支撐體係採用Tg爲490 °C且150〜200 °C中的線膨脹 係數爲12PPm/°C的聚醯亞胺薄膜（厚度25μηι)，依其上 所塗布的上述黏著劑層形成用塗布液，在乾燥後的厚度 爲8μπι的方式進行塗布，然後於16CTC下乾燥5分鐘， 獲得遮罩。 實施例2 (黏著劑層形成用塗布液的調配） 將聚二甲基矽氧烷（KR 120、信越化學公司產製），及 苄基過氧化物（編號-Β、曰本油脂公司產製），依重量比 1〇〇:1比率進行混合。 (遮罩之製作） -13- 540131 五、發明說明（12) 支撐體係採用Tg爲490 t且1 50〜200 °C中的線膨脹 係數爲12Ppm/°C的聚醯亞胺薄膜（厚度25μηι)，依其上 所塗布的上述黏著劑層形成用塗布液，在乾燥後的厚度 爲8 μηι的方式進行塗布，然後於1 6 (TC下乾燥} 5分鐘 ，獲得遮罩。 比較例1 (黏著劑層形成用塗布液的調配） 在丙烯酸共聚物（S K達音1 1 3 1 B (商品名，音譯）、總 硏化公司產製）中，將異氯酸酯（克羅奈德’L-40(商品名 ，音譯）、日本聚胺脂公司產製）依重量比10 〇:1比率進 行混合。 支撐體係採用Tg爲490°c且150〜20(TC中的線膨脹 係數爲12PPm广C的聚醯亞胺薄膜（厚度25μπι)，依其上 所塗沛的上述黏著劑層形成用塗布液，在乾燥後的厚度 爲8 μπι的方式進行塗布，然後於100 °C下乾燥5分鐘之 後，再於30°C下放置7日，獲得遮罩。 比較例2 (黏著劑層形成用塗布液的調配） 將環氧樹脂（艾比可德828 (商品名，音譯）、油化薛爾 公司產製（公司名，音譯））、環氧硬化劑（雷劑德普 ?3“4261 (商品名，音譯）、群榮化學公司產製）、丙烯腈 -丁二烯共聚物（尼包爾1〇〇1(商品名，音譯）、日本傑恩 公司產製（公司名，音譯）），依重量比40:3 0:3 0進行混 合。 -14- 540131 五、發明說明（13) (遮罩之製作） 支撐體係採用Tg爲490°C且150〜200 °C中的線膨脹 係數爲12ppm/°C的聚醯亞胺薄膜（厚度25μηι)，依其上 所塗布的上述黏著劑層形成用塗布液，在乾燥後的厚度 爲8 μπι的方式進行塗布，然後於1 3 0 °C下乾燥5分鐘， 獲得遮罩。 比較例3 (黏著劑層形成用塗布液的調配） 將聚烷基烯基矽氧烷與聚烷基氫矽氧烷的混合液 (X40-3103、信越化學公司產製），及白金觸媒溶液 (PL5 0T、信越化學公司產製），依重量比100:1比率進 行混合。 (遮罩之製作） 支撐體係採用Tg爲73 °c且1 50〜20 0 °C中的線膨脹 係數爲60ppmTC的聚對苯二甲酸乙二醇酯薄膜（厚度 2 5 μηι)，依其上所塗布的上述黏著齊I]層形成用塗布液， 在乾燥後的厚度爲8μηι的方式進行塗布，然後於130°C 下乾燥5分鐘，獲得遮罩。 <評估項目及評估方法> (重量減少率） 經上述實施例1與3、及比較例1〜3所製得的遮罩 中，黏著劑層的重量減少率的測量，如下所示方式進行。 將在各實施例1與2、及比較例1〜3中所獲得的黏 著劑，在表面平滑的鐡夫龍（註冊商標，音譯）片上’依 -15- 540131 五、發明說明（14 ) 形成厚度lmm的方式進行塗布而形成黏著劑層，在各 實施例、比較例中，利用與製作遮罩時相同的條件，施 行黏著劑層的乾燥或硬化，而製得貼附黏著劑層的鐵夫 龍（註冊商標，音譯）片。然後，僅剝離黏著劑層，將經 剝離後的黏著劑層，採用示差熱天秤（世構音實露面茲 公司產製（公司名，音譯）、TG/DTA 3 2 0 )，測量在180fC 下加熱1小時的重量減少率。 (翹曲特性） 將上述實施例1與2、及比較例1〜3所製得的遮罩 ，層合於外觀尺寸200x60mm的QFN用引線架（Au-Pd-Ni鍍銅引線架、8x32個矩陣排列、封裝體尺寸5χ 5mm 、樹脂封裝區域180 x 40mm)，裁剪該QFN用引線架大 小，製成薄膜積層體。將此薄膜積層體當作翹曲特性評 估樣本。 將此評估樣本，以遮罩面在上面的置於水平台上，利 用數位測量顯微鏡（奧林巴斯公司產製（公司名，音譯） 、S Τ Μ - U Μ)，由z軸座標測量進丫了 部觀曲局度的測 量。結果如表1所示。 (打線接合性） 上述實施例1與2、及比較例1〜3所製得的遮罩， 層合於外觀尺寸200x60mm的QFN用引線架（Au-Pd-Ni 鑛銅引線架、8 x 3 2個矩陣排列、封裝體尺寸5 χ 5 m m、 樹脂封裝區域1 80 x4 0 mm)。然後，使用環氧系晶片黏 著劑，將鋁蒸鍍測試晶圓（3x3 mm、厚度0.4mm)黏著於 -16- 540131 五、發明說明（15) 引線架的晶片腳座上，利用絲線焊接器（FB 13 1、加依瓊 公司產製（公司名，音譯）），在溫度：180°C、頻率：60kHz 、荷重：150gf、處理速度：l〇ms/針腳的條件下，利用金 絲線將導線針腳前端與測試晶圓予以電性連接。檢查 256個所獲得的封裝體，將產生導線端連接不良的封裝 體數目，視爲打線接合不良產生個數而檢測出。 (模溢料） 採用環氧系封裝樹脂（鄰甲酚酚醛淸漆環氧系、塡料 量、85重量％)，在加熱溫度：18(TC、壓力：10MPa、處 理時間：3分鐘的條件下，將經打線接合過的引線架利 用轉印模（模具成型）而進行樹脂封裝。然後，將遮罩從 樹脂封裝物上剝離，觀察該樹脂封裝物的遮罩面，確 認導線針腳部分上有洩漏並附著封裝樹脂的封裝體數 量。然後，在25 6個封裝體中，將因封裝樹脂洩漏而產 生不良的個數當作模溢料個數並檢測出。 (殘膠） 如R評估模溢料’在利用構模劑封裝測試晶圓之後， 依剝離速度5 0 0 m m / m i η的條件，將遮罩從引線架上剝 離。檢查2 5 6個經剝離遮罩後的封裝體，將在導線外部 連接用部分（導線貼附遮罩的一面）附著有黏著劑的封裝 體數目，當作殘膠產生個數並檢測出。 <評估結果> 實施例1與2、比較例1〜3中所獲得的評估結果， 如表1所示。 -17- 540131 五、發明說明（16) 表1 —— 重量減少 率 (%) 翹曲 (mm) 發生打線 接合不良 個數 (個） 發生模溢 料個數 (個） 發生殘膠 個數 (個） 實施例1 0.8 0.3 0 0 0 實施例2 1.2 0.4 0 1 0 比較例1 5.6 0.4 154 216 189 ^例 2 3.8 1.3 32 10 210 比較例3 0.8 3.2 0 0 _氺1 ) M)未評估 貫施例3 將含有平均分子量5 00,000的聚烷基烯基矽氧烷與白 金觸媒的溶液（TSR-1 5 1 2、固形分濃度60%、GE東芝矽 公司產製），與聚烷基氫矽氧烷（CR-5 1、平均分子量 1 3 00、GE東芝矽公司產製），依重量比ι〇0:1進行混合 ’而調配成含有加成反應型矽系黏著劑的黏著劑層形成 用塗布液。 其次’將上述黏著劑層形成用塗布液，在如同實施例 1的聚醯亞胺薄膜上，依形成乾燥後厚度8 μ m的方 式’塗布上述黏著劑而形成黏著劑層之後，利用在 1 60 °C下加熱1 5分鐘，而使黏著劑層乾燥、硬化後，獲 得本發明之遮罩。 實施例4 將含有平均分子量4〇〇，〇 〇〇的聚烷基烯基矽氧烷與白 -18- 540131 五、發明說明（17) 金觸媒的溶液（TSR-1516、固形分濃度60%、GE東芝矽 公司產製），與聚烷基氫矽氧烷（CR-50、平均分子量 2 00 0、GE東芝矽公司產製），依重量比100:1進行混合 ，而調配成含有加成反應型砂系黏著劑的黏著劑層形成 用塗布液。 其次，將上述黏著劑層形成用塗布液，在如同實施例 1的聚醯亞胺薄膜上，依形成乾燥後厚度8 μ m的方式， 塗布上述黏著劑而形成黏著劑層之後，利用在1 60°C 下加1 5分鐘，而使黏著劑層乾燥、硬化後，獲得本發 明之遮罩。 實施例5 將聚二甲基矽氧烷（KR-101-10、平均分子量240,000 、信越化學公司產製），及苄基過氧化物（編號-B、日本 油脂公司產製），依重量比1 00 : 1比率進行混合，調配 成含聚有機矽氧烷過氧化物硬化型矽系黏著劑的黏著劑 層形成用塗布液。 其次，將上述黏著劑層形成用塗布液，在如同實施例 1的聚醯亞胺薄膜上，依形成乾燥後厚度8 μηι的方式， 塗布上述黏著劑而形成黏著劑層之後，利用在1 60°C下 加熱1 5分鐘，而使黏著劑層乾燥、硬化後，獲得本發 明之遮罩。 此外，在上述實施例3〜5中，黏著劑層形成用塗布 液中的樹脂平均分子量，係依如下進行測量。換句話說 ，溶劑採用四氫呋喃，調製0.2重量％的矽樹脂溶液， -19- 540131 五、發明說明（18) 並採用GPC(凝膠滲透色譜）裝置，在樹脂分離用管柱中 串聯排列二根KF-8 0 6L(昭和電工公司產製）並進行測量 。求取平均分子量。 <評估項目及評估方法> 將在各實施例3-5及比較例1與2中所獲得的黏著劑 ，在表面平滑的鐵夫龍（註冊商標，音譯）片上，依形成 厚度1mm的方式進行塗布而形成黏著劑層，在各實施 例、比較例中，利用與製作遮罩時相同的條件，施行黏 著劑層的乾燥或硬化，而製得貼附黏著劑層的鐵夫龍 (註冊商標，音譯）片。 將所獲得樣本切割呈直徑7mm的圓盤狀，採用彈性 率測量裝置（壓縮器、Haake公司產製），將頻率設爲 1Hz、昇溫速度設爲3°C/min、溫度範圍設爲1 50-200°C、 荷重量％設爲3N，測量黏著劑層的動彈性率。 (重量減少率） 採用如同上述表1中的方法進行評估。 (模溢料） 採用如同上述表1中的方法進行評估。 (殘膠） 採用如同上述表1中的方法進行評估。 <評估結果〉 在實施例3〜5、比較例1及2中所獲得的評估結果 ，如表2所示。其中’在表2中，動彈性率係表示在 150〜20 0°C所測得黏著劑層的動彈性率最小値。 -20- 540131 五、發明說明（19) 表2 動彈性率 (Pa) 重量減少 率 (%) 發生打線 接合不良 的個數 (個） 發生模溢 料個數 (個） 發生殘膠 個數 (個） 實施例3 8.0χ104 0.8 0 0 0 實施例4 5.5χ104 1.2 0 0 5 實施例5 2.1χ1〇4 3.2 4 1 3 比較例1 2.3χ103 5.6 154 216 189 比較例2 3.8χ106 3.8 32 10 210 由表2中得知，在採用含有平均分子量10,000〜 1，5 0 0，0 0 0聚有機矽氧烷的矽系黏著劑而形成黏著劑層 ，而製作出黏著劑層在150〜200 °C中之動彈性率爲 1 .0x1 04Pa以上遮罩的實施例3〜5中，所獲得的黏著 劑層之重量減少率將爲0.8〜3.2%的小値·。採用所獲得 遮罩進行評估的結果，發現完全無產生打線接合不良、 模溢料、殘膠的現象，即便有發生其個數亦極少。 相對於此，在採用丙烯酸系黏著劑形成黏著劑層， 而製作出黏著劑層在150〜200 °C中之動彈性率低於 1 · 0 X 1 04P a之遮罩的比較例1中，黏著劑層的重量減少 率大至5.6%。採用所獲得遮罩進行評估的結果，發現 有產生打線接合不良、模溢料、殘膠的現象。 再者，在採用橡膠系黏著劑形成黏著劑層，而製作出 黏著劑層在150〜200°C中之動彈性率在l.〇xl〇4Pa以上 遮罩的比較例2中，黏著劑層的重量減少率爲3.8%的 -21 - 540131 五、發明說明（2〇) 小値。採用所獲得遮罩進行評估的結果，發現雖產生打 線接合不良的個數較少，但是卻高機率的產生殘膠現象。 【產業上可利用性】 本發明之遮罩因爲具有上述構造，因此耐熱性佳，且 晶片黏著劑烘烤時的熱過程中亦極少產生分解物的揮發 量，使引線架不致遭受污染，所以金絲線對半導體晶片 與引線架的連接便可獲得高連接信賴性。此外，因爲引 線架無翹曲，因此不致產生定位不佳的現象。再者，亦 可抑制封裝樹脂從遮罩帶洩漏的「模溢料」現象發生， 並抑制黏著劑的殘膠，因此可安定的生產Q FN等半導 體封裝體。故，藉由使用本發明的遮罩，便可有效率的 組裝半導體裝置。 圖示符號說明】 10 遮罩 11 耐熱薄膜 12 黏著劑層 20 引線架 21 半導體元件搭載部 22 導線 30 半導體元件 3 1 焊接絲線 40 封裝樹脂 50 QFN 60 QFN單元 -22 - -——-At: Measurement temperature (200T:-150T: 50 ° C)) The adhesive layer of the mask of the present invention is the same as the above-mentioned heat-resistant film. The thermal process in the wafer bonding step, wire bonding step, and resin packaging step must be It has few changes such as decomposition and deterioration, and has stable adhesion. In addition, because the mask can be peeled from the lead frame, the adhesion strength of the heat-resistant film to the adhesive layer of the mask must be greater than that of the resin encapsulant and the lead frame. Silicone adhesives meet these requirements and form an adhesive layer that withstands the above-mentioned environments. Therefore, in the present invention, the adhesive layer is shaped using a silicon-based adhesive 540131. V. INTRODUCTION TO THE INVENTION (7) In the present invention, the adhesive layer preferably contains an average molecular weight of 1 000 to 1, 5 00, 0 00. It is formed by the silicone adhesive of polyorganosiloxane, and its dynamic elastic modulus in the range of 150 ~ 200 ° C is above 1.0 X 1 04 Pa. The average molecular weight is particularly preferably within a range of 10,000 to 1,000,000. By setting the average molecular weight of the polyorganosiloxane to the above range, the peelability of the adhesive layer after curing can be improved ', and the mask can be peeled off from the lead frame well. Therefore, it is possible to prevent the occurrence of adhesive residue after the mask is peeled off. The content of the polyorganosiloxane is 10% by weight or more, preferably 50% by weight or more, and more preferably 90% by weight or more. When manufacturing semiconductor devices such as QFNs, it is possible to prevent defects such as wire bonding failure, die flash, and adhesive residue. In addition, when the average molecular weight of the polyorganosiloxane is less than 10,000, the cohesive force of the adhesive layer after hardening will decrease ', and a residual phenomenon may occur after peeling from the lead frame. Conversely, when the average molecular weight of the polyorganosiloxane is more than 1,500,000, when the silicon-based adhesive is blended, the solubility of the polyorganosiloxane to an organic solvent will be reduced, and uniform adhesion may not be obtained. Agent, it will be difficult to uniformly form an adhesive layer on a heat-resistant substrate. In addition, when the thickness of the adhesive layer is not uniform, because the adhesion between the mask and the lead frame is partially reduced, it is easy to cause mold flash in the resin packaging step, which is not good. situation. In addition, when the silicon-based adhesive is an addition-reaction type adhesive containing polyalkylalkenylsiloxane and polyalkylhydrosiloxane, polyalkyl 540131 V. Description of the invention (8) Hydrogen The average molecular weight of the siloxane is preferably from 500 to 10,000. When the average molecular weight of the polyalkyl hydrosiloxane is less than 500, the reactivity when mixed with the polyalkyl alkenyl siloxane of the main agent is too high, and the heat resistance is applied when the adhesive is applied. The substrate has undergone a hardening reaction before, and there is a concern that it is difficult to obtain a uniform adhesive layer. Conversely, when the average molecular weight of the polyalkyl hydrosiloxane is greater than 10,000, the reactivity with the polyalkyl alkenyl siloxane will be too low, and the cohesive force of the adhesive after hardening will be reduced. There is concern about the phenomenon of adhesive residue when the rack is peeled. Furthermore, in the case of using the above-mentioned polyorganosiloxane having an average molecular weight, the dynamic elastic modulus of the adhesive layer at 150 ° to 200 ° C must be 1.0xl04Pa or more. This makes it difficult for the adhesive layer to absorb ultrasonic waves in the wire bonding step when manufacturing semiconductor devices such as QFNs. As a result, the vibration of the lead frame adhered to the adhesive layer can be reduced, and the occurrence of poor wire bonding can be prevented. In addition, when the dynamic modulus of elasticity at 150 ~ 200 ° C of the adhesive layer is lower than 1.0 × 1 〇4Pa, in the wire bonding step, the adhesive layer will absorb ultrasonic waves and cause the lead frame to vibrate. There is a concern that the wire bonding will be poor. With the above-mentioned structure of the adhesive layer, the adhesion force of the mask to the adhesive layer can be sufficiently highlighted even at 150 ° to 200 ° C, which can suppress the assembly of semiconductor devices such as QFN. The lead frame and the mask are peeled off during the resin packaging step, and mold flashing can be prevented. In the present invention, the silicon-based adhesive may contain inorganic or organic materials for the purpose of adjusting the coefficient of thermal expansion, heat transfer rate, or controlling surface wrinkles and adhesion. Inorganic materials such as: crushed silica, fused silica · -10- 540131 V. Description of the invention (9) Oxide oxide, titanium oxide, beryllium oxide, magnesium oxide, calcium carbonate, titanium nitride, silicon nitride, nitrogen Boron, titanium boride, tungsten boride, silicon carbide, titanium carbide, chromium carbide, molybdenum carbide, mica, zinc oxide, carbon black, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, antimony trioxide, or such surfaces Treated with trimethylsiloxane. Organic materials such as polyimide, polyimide, amidine, polyetheretherketone, polyetherimide, polyesterimide, nylon, silicon, etc. The compounding amount of these materials is 1 to 500 parts by weight, preferably 3 to 200 parts by weight, and especially 5 to 100 parts by weight relative to 1,000 parts by weight of the silicon-based resin constituting the adhesive layer. Those are better. The method of laminating the adhesive layer on the heat-resistant film may be a method of applying a sand-based adhesive solution directly on the heat-resistant film, and then drying the casting method, and firstly applying a silicon-based adhesive solution on the release film. A lamination method in which an adhesive layer is formed after drying, and this adhesive layer is transferred to a heat-resistant film. The thickness of the adhesive layer is generally set within a range of 1 to 30 μm. A protective film can be provided on the adhesive layer as required. The protective film is only required to have release properties, and any film can be used. For example, films such as polyester, polyethylene, polypropylene, and polyethylene terephthalate are used, and films whose surface is subjected to release treatment with silicone or fluoride are used. The protective film can be peeled off just before the semiconductor device is manufactured. Next, according to the method of combining semiconductor devices of the present invention, the manufactured semiconductor devices use QFN as an example, and are described with reference to the drawings. Figure 2 is an end view of a semiconductor device mounted on a lead frame. -11-540131 V. Description of the invention (10) A rough plan view. Figures 3 (a) to (f) show the steps of a method for manufacturing a QFN from the lead frame shown in Figure 2, and are schematic cross-sectional views when the lead frame is cut along lines A to A 'in Figure 2. First, the lead frame 20 shown in FIG. 2 is prepared. The lead frame 20 is provided with a plurality of island-shaped semiconductor device mounts (wafer pins) 2 1 'on which semiconductor elements such as IC chips are mounted, and a plurality of leads 22 are arranged along the outer edges of the semiconductor device mount portions 2 1. Next, as shown in FIG. 3, in the step of attaching the mask, the mask 10 of the present invention is attached to the lead frame 20 on the top surface of the lead frame according to an adhesive layer on the lead frame. For lamination, a lamination method can be used. For example, the heat-resistant film is adhered to the lead frame by using an adhesive layer formed by hardening a silicon-based adhesive under pressure bonding under heating. Next, as shown in FIG. 3 (b), in the wafer bonding step, a semiconductor device such as an IC wafer 30 is mounted on one end of the mask 10 without being attached, and is mounted using a wafer adhesive (not shown). On the semiconductor element mounting portion 21 of the lead frame 20. Then, "as shown in Fig. 3 (c)", in the wire bonding step, the semiconductor element 30 and the lead 22 of the lead frame 20 are electrically connected with a wire 31 by soldering a gold wire or the like. Thereafter, as shown in FIG. 3 (d), in the resin encapsulation step, the semiconductor device (FIG. 3 (c)) in the middle of manufacturing is placed in a mold, and the encapsulating resin (molding agent) is used and transferred The semiconductor element 30 is encapsulated using a molding resin 40 or the like. After the combustion, as shown in FIG. 3 (e), by removing the mask 10 from the lead frame 20 -12-540131, and 5. Description of the invention (11), a QFN unit 60 having a plurality of QFN50 0s can be formed. Finally, as shown in FIG. 3 (f), the QFN unit 60 is cut by U for each QFN 50 to produce a plurality of QFNs. [Examples] Hereinafter, the present invention will be described more specifically using examples. However, the present invention is not limited to these embodiments. Example 1 (Preparation of a coating solution for forming an adhesive layer) A mixed solution of polyalkylalkenylsiloxane and polyalkylhydrosiloxane (X4 0-3 1 0 3, manufactured by Shin-Etsu Chemical Co., Ltd.), And platinum catalyst solution (PL50T, manufactured by Shin-Etsu Chemical Co., Ltd.) are mixed at a weight ratio of 100: 1. (Making of mask) The supporting system uses a polyimide film (thickness: 25 μηι) with a Tg of 490 ° C and a linear expansion coefficient of 12 PPm / ° C at 150 to 200 ° C. The above-mentioned adhesive is applied on it. The coating liquid for layer formation was coated so that the thickness after drying was 8 μm, and then dried at 16 CTC for 5 minutes to obtain a mask. Example 2 (Preparation of a coating solution for forming an adhesive layer) Polydimethylsiloxane (KR 120, manufactured by Shin-Etsu Chemical Co., Ltd.) and benzyl peroxide (No.-B, manufactured by Yueben Grease Co., Ltd.) ), Mixed in a weight ratio of 100: 1. (Making of mask) -13- 540131 V. Description of the invention (12) The supporting system uses a polyimide film (thickness 25μηι) with a Tg of 490 t and a linear expansion coefficient of 12Ppm / ° C at 150 ~ 200 ° C ), According to the above-mentioned coating liquid for forming an adhesive layer to be coated thereon, coated with a thickness of 8 μm after drying, and then dried at 16 (TC under TC) for 5 minutes to obtain a mask. Comparative Example 1 ( Preparation of a coating solution for forming an adhesive layer) In an acrylic copolymer (SK Tada 1 1 3 1 B (trade name, transliteration), manufactured by Soka Chemical Co., Ltd.), isochloride (Cronat ' L-40 (trade name, transliteration), made by Japan Polyurethane Co., Ltd.) are mixed in a weight ratio of 10 0: 1. The support system uses a Tg of 490 ° C and a 150 to 20 (the linear expansion coefficient in TC is 12 PPm). The polyimide film (thickness: 25 μm) of Guangzhou C was coated with the coating solution for the formation of the adhesive layer, which was applied thereon, so as to have a thickness of 8 μm after drying, and then dried at 100 ° C. 5 After 5 minutes, it was left at 30 ° C for 7 days to obtain a mask. Comparative Example 2 (Coating for forming an adhesive layer) Preparation of liquid) Epoxy resin (Abikode 828 (trade name, transliteration), made by Grease Chemical Co., Ltd. (company name, transliteration)), epoxy hardener (Rayde Depp? 3 "4261 ( Trade name, transliteration), manufactured by Qunrong Chemical Co., Ltd., acrylonitrile-butadiene copolymer (Nippol 2001 (trade name, transliteration), Japan Jen Corporation (company name, transliteration)) ， Mix according to the weight ratio of 40: 3 0: 3 0. -14- 540131 V. Description of the invention (13) (Making of the mask) The support system uses a linear expansion coefficient at Tg of 490 ° C and 150 ~ 200 ° C A polyimide film (thickness: 25 μηι) of 12 ppm / ° C was coated on the above-mentioned coating solution for forming an adhesive layer on the dried layer to a thickness of 8 μπι, and then applied at 130 ° Dry for 5 minutes at C to obtain a mask. Comparative Example 3 (Preparation of a coating solution for forming an adhesive layer) A mixed solution of polyalkylalkenylsiloxane and polyalkylhydrosiloxane (X40-3103, Shin-Etsu (Manufactured by Chemical Co., Ltd.) and platinum catalyst solution (PL5 0T, manufactured by Shin-Etsu Chemical Co., Ltd.) at a weight ratio of 100: 1 (Mask production) The support system uses a polyethylene terephthalate film (thickness 2 5 μηι) with a Tg of 73 ° c and a linear expansion coefficient of 60 ppmTC at 150 to 200 ° C. The above-mentioned coating liquid for forming an adhesive layer] was applied so as to have a thickness of 8 μm after drying, and then dried at 130 ° C. for 5 minutes to obtain a mask. ≪ Evaluation item and evaluation method & gt (Weight reduction rate) In the masks prepared in the above Examples 1 and 3 and Comparative Examples 1 to 3, the weight reduction rate of the adhesive layer was measured as follows. The adhesives obtained in each of Examples 1 and 2 and Comparative Examples 1 to 3 were formed on a smooth surface of a wood-cutting dragon (registered trademark, transliteration) sheet according to -15-540131. 5. Description of the invention (14) thickness The coating was applied in a manner of 1 mm to form an adhesive layer. In each of the examples and comparative examples, the same conditions as those used for making the mask were used to dry or harden the adhesive layer to obtain a Teflon with an adhesive layer. (Registered trademark, transliteration) film. Then, only the adhesive layer was peeled off, and the peeled adhesive layer was measured using a differential thermal balance (produced by Segoyin Shimizoi Corporation (company name, transliteration), TG / DTA 3 2 0), and heated at 180fC. 1 hour weight loss rate. (Warping Characteristics) The masks prepared in the above Examples 1 and 2 and Comparative Examples 1 to 3 were laminated on a QFN lead frame (Au-Pd-Ni copper-plated lead frame, 8x32 pieces) with an external size of 200x60 mm. Matrix arrangement, package size 5 x 5 mm, resin package area 180 x 40 mm), the size of the lead frame for QFN was cut to make a thin film laminate. This thin film laminate was used as a sample for evaluating warpage characteristics. This evaluation sample was placed on a water platform with a masked surface on top, and was measured by a z-axis coordinate using a digital measuring microscope (produced by Olympus Corporation (company name, transliteration), STM-UM). Into the Ministry of measurement of the degree of tune. The results are shown in Table 1. (Wire bonding properties) The masks prepared in the above Examples 1 and 2 and Comparative Examples 1 to 3 were laminated on a QFN lead frame (Au-Pd-Ni mineral copper lead frame, 8 x 3) with an external size of 200x60 mm. 2 matrix arrangements, package size 5 x 5 mm, resin package area 1 80 x 4 0 mm). Then, using an epoxy-based wafer adhesive, an aluminum vapor deposition test wafer (3x3 mm, thickness 0.4 mm) was adhered to -16-540131. V. Description of the invention (15) The wafer base of the lead frame, using a wire bonder (FB 13 1. Made by Jia Yiqiong Company (company name, transliteration)), under the conditions of temperature: 180 ° C, frequency: 60kHz, load: 150gf, processing speed: 10ms / pin, The front end of the lead pin is electrically connected to the test wafer. The 256 obtained packages were inspected, and the number of packages with defective wire end connections was detected as the number of defective wire bonding defects. (Mold flash) Epoxy-based encapsulating resin (o-cresol novolak epoxy-based, epoxy material, 85% by weight), heating temperature: 18 (TC, pressure: 10 MPa, processing time: 3 minutes) Next, the lead frame which has been wire-bonded is resin-encapsulated with a transfer mold (mold molding). Then, the mask is peeled from the resin package, and the mask surface of the resin package is observed, and the lead pins are confirmed. The number of packages with leakage and adhesion of the sealing resin. Then, among the 25 6 packages, the number of defectives due to the leakage of the sealing resin was taken as the number of mold flashes and detected. (Residual glue) As evaluated by R After the test wafer is encapsulated with a patterning agent, the mask is peeled from the lead frame at a peeling speed of 500 mm / mi η. Check 2 5 6 packages after peeling the mask. The number of packages with adhesives attached to the external connection part of the wire (the side where the wire is attached to the mask) was counted and detected as the number of residues. ≪ Evaluation results > Examples 1 and 2, Comparison The evaluation results obtained in Examples 1 to 3, As shown in Table 1. -17- 540131 V. Description of the invention (16) Table 1 —— Weight reduction rate (%) Warpage (mm) Number of wire bonding failures (pcs) Number of mold flashes (pcs) Number of residues (number) Example 1 0.8 0.3 0 0 0 Example 2 1.2 0.4 0 1 0 Comparative Example 1 5.6 0.4 154 216 189 ^ Example 2 3.8 1.3 32 10 210 Comparative Example 3 0.8 3.2 0 0 _ 氺 1 ) M) Example 3 was not evaluated. A solution containing polyalkylalkenylsiloxane with an average molecular weight of 500,000 and a platinum catalyst (TSR-1 5 1 2. Solid content concentration of 60%, manufactured by GE Toshiba Silicon Corporation) ), Mixed with polyalkylhydrosiloxane (CR-5 1, average molecular weight 1 300, manufactured by GE Toshiba Silicon Co., Ltd.), blended according to the weight ratio ι0: 1 and formulated to contain addition reaction type silicon A coating liquid for forming an adhesive layer of an adhesive. Next, 'apply the above-mentioned coating solution for forming an adhesive layer on the polyimide film of Example 1 in a manner to form a thickness of 8 μm after drying', and apply the above-mentioned adhesive to form an adhesive layer. After heating at 60 ° C for 15 minutes, the adhesive layer was dried and hardened to obtain the mask of the present invention. Example 4 A polyalkylalkenylsiloxane containing an average molecular weight of 40,000 and white-18-540131 was used. V. Description of the invention (17) A solution of a gold catalyst (TSR-1516, solid content concentration 60) %, Manufactured by GE Toshiba Silicon Corporation), and polyalkyl hydrosiloxane (CR-50, average molecular weight 2000, manufactured by GE Toshiba Silicon Corporation) in a weight ratio of 100: 1, and formulated to contain A coating liquid for forming an adhesive layer of an addition reaction type sand-based adhesive. Next, the coating liquid for forming an adhesive layer was coated on the polyimide film as in Example 1 to form a thickness of 8 μm after drying, and the adhesive was formed to form an adhesive layer. After adding at 60 ° C for 15 minutes, the adhesive layer was dried and hardened to obtain the mask of the present invention. Example 5 Polydimethylsiloxane (KR-101-10, average molecular weight 240,000, manufactured by Shin-Etsu Chemical Co., Ltd.), and benzyl peroxide (No.-B, manufactured by Nippon Oil & Fats Co., Ltd.) were used in accordance with the weight ratio. The mixture was mixed at a ratio of 1 00: 1 to prepare a coating liquid for forming an adhesive layer containing a polyorganosiloxane peroxide-hardened silicon-based adhesive. Next, the coating solution for forming an adhesive layer was coated on the polyimide film as in Example 1 to form a thickness of 8 μm after drying, and then the adhesive was formed to form an adhesive layer. After heating at ° C for 15 minutes, the adhesive layer was dried and hardened to obtain the mask of the present invention. In addition, in Examples 3 to 5, the average molecular weight of the resin in the coating liquid for forming an adhesive layer was measured as follows. In other words, tetrahydrofuran was used as the solvent to prepare a 0.2% by weight silicone resin solution. -19-540131 V. Description of the invention (18) A GPC (gel permeation chromatography) device was used to arrange two resins in series in a column for resin separation. KF-8 0 6L (manufactured by Showa Denko) and measured. Find the average molecular weight. < Evaluation item and evaluation method > The adhesive obtained in each of Examples 3-5 and Comparative Examples 1 and 2 was formed on a smooth Teflon (registered trademark, transliteration) sheet with a thickness of 1 mm. Coating was performed to form an adhesive layer. In each of the examples and comparative examples, the same conditions as those used in the production of the mask were used to dry or harden the adhesive layer to obtain a Teflon (registered trademark) with an adhesive layer. , Transliteration). The obtained sample was cut into a disc shape with a diameter of 7 mm, and an elastic modulus measuring device (compressor, manufactured by Haake) was used. The frequency was set to 1 Hz, the heating rate was set to 3 ° C / min, and the temperature range was set to 50. The dynamic elastic modulus of the adhesive layer was measured at -200 ° C and 3% by weight. (Weight reduction rate) Evaluation was performed by the method as in Table 1 above. (Mold flash) Evaluation was performed by the method as in Table 1 above. (Residual glue) Evaluation was performed by the method as in Table 1 above. < Evaluation results> Table 2 shows the evaluation results obtained in Examples 3 to 5 and Comparative Examples 1 and 2. Among them, in Table 2, the dynamic elastic modulus indicates that the dynamic elastic modulus of the adhesive layer measured at 150 to 200 ° C is the smallest. -20- 540131 V. Description of the invention (19) Table 2 Dynamic elasticity rate (Pa) Weight reduction rate (%) Number of wire bonding failures (number) Mold overflow (number) Residual glue number ( A) Example 3 8.0 × 104 0.8 0 0 0 Example 4 5.5 × 104 1.2 0 0 5 Example 5 2.1 × 104 0 4 3.2 4 1 3 Comparative Example 1 2.3 × 103 5.6 154 216 189 Comparative Example 2 3.8 × 106 3.8 32 10 210 by Table 2 shows that an adhesive layer was formed by using a silicon-based adhesive containing an average molecular weight of 10,000 to 1,500, 0,000 polyorganosiloxane, and an adhesive layer was produced at 150 to 200 ° C. In Examples 3 to 5 in which the kinematic elasticity ratio is 1.0 × 1 04 Pa or more, the weight reduction rate of the obtained adhesive layer will be 0.8 to 3.2%. As a result of evaluation using the obtained mask, it was found that there were no occurrences of wire bonding failure, die flash, and adhesive residue, and even if they occurred, the number was very small. On the other hand, in Comparative Example 1 in which a mask was formed using an acrylic adhesive and a dynamic elastic modulus of the adhesive layer at 150 to 200 ° C was lower than 1 · 0 X 1 04P a, The weight reduction rate of the adhesive layer was as large as 5.6%. As a result of evaluation using the obtained mask, it was found that there were occurrences of poor wire bonding, mold flash, and adhesive residue. In addition, in Comparative Example 2 in which a rubber-based adhesive was used to form an adhesive layer, and a dynamic elastic modulus of the adhesive layer at 150 to 200 ° C. was masked at 1.0 × 104 Pa or more, the adhesive layer was prepared. The weight reduction rate of 3.8% is -21 to 540131. V. Description of the invention (20) Xiaoyan. As a result of the evaluation using the obtained mask, it was found that although the number of wire bonding failures was small, there was a high probability of the occurrence of adhesive residue. [Industrial Applicability] Since the mask of the present invention has the above-mentioned structure, it has excellent heat resistance, and the volatilization amount of decomposition products is rarely generated during the thermal process of wafer adhesive baking, so that the lead frame is not contaminated, so Gold wire can be used to connect semiconductor wafers to lead frames for high connection reliability. In addition, since the lead frame does not warp, it does not cause poor positioning. In addition, it can also prevent the occurrence of "mold flashover" of the sealing resin from leaking from the masking tape, and suppress the adhesive residue of the adhesive. Therefore, semiconductor packages such as Q FN can be produced stably. Therefore, by using the mask of the present invention, a semiconductor device can be efficiently assembled. Explanation of symbols] 10 Mask 11 Heat-resistant film 12 Adhesive layer 20 Lead frame 21 Semiconductor device mounting section 22 Lead 30 Semiconductor device 3 1 Solder wire 40 Encapsulating resin 50 QFN 60 QFN unit -22--——-

Claims (1)

540131 裝3, 年月 m^L· 六、申請專利範圍 第911〇447 1號「半導體裝置組裝用遮罩及半導體組裝 方法」專利案 (92年3月18日修正） Λ申請專利範圍： 1 · 一種半導體裝置組裝用遮罩，其特徵在於：在玻璃 轉化溫度在1 5 〇 C以上’且1 5 0〜2 0 0 °C的線膨張係數 爲10-50ppm广C的耐熱薄膜上，設置含有矽系黏著劑 的黏著劑層。 2 ·如申請專利範圍第1項所述之半導體裝置組裝用遮 罩，其中該黏著劑層在1 8 0 °C加熱1小時的重量減少 率係在5 %以下。 3 .如申請專利範圍第1項所述之半導體裝置組裝用遮 罩，其中該黏著劑係含有聚二甲基矽氧烷。 4·如申請專利範圍第1項所述之半導體裝置組裝用遮 罩，其中該矽系黏著劑係含有聚烷基烯基矽氧院與 聚院基Μ砂氧院。 5 ·如申請專利範圍第1項所述之半導體裝置組裝用遮 罩，其中該黏著劑層係採用含有平均分子量1〇,〇〇〇_ 1，500,000之聚有機矽氧烷的矽系黏著劑而形成，且 150〜200°C中的動彈性率在1.0xl04Pa以上。 6 ·如申請專利範圍第5項所述之半導體裝置組裝用遮 罩，其中該聚有機矽氧烷係聚二甲基矽氧烷。 7 ·如申請專利範圍第5項所述之半導體裝置組裝用遮 罩，其中該聚有機矽氧烷係聚烷基烯基矽氧烷。 8 ·如申請專利範圍第5項所述之半導體裝置組裝用遮 -1 - 540131 t、申請專利範圍 罩，其中該矽系黏著劑係含有聚烷基氫矽氧烷。 9 . 一種半導體裝置組裝方法，其特徵在於：將遮罩壓 接於引線架上，然後將半導體元件搭載於黏著有遮 罩的引線架上，之後再利用金絲線連接半導體元件 與引線架，其次再於模具中利用樹脂封裝劑施行樹 脂封裝，黏著再剝離該遮罩；其中該遮罩係採用申 請專利範圍第1項所述的遮罩。 -2-540131 3, year m ^ L. VI. Patent Application No. 9110447 No. 1 "Shield for Semiconductor Device Assembly and Semiconductor Assembly Method" Patent Case (Amended on March 18, 1992) Λ Application Patent Range: 1 · A mask for assembling a semiconductor device, which is characterized in that: a heat-resistant film having a glass transition temperature of 150 ° C. or higher and a linear expansion coefficient of 1 50 to 2 0 ° C of 10 to 50 ppm wide C is provided An adhesive layer containing a silicon-based adhesive. 2. The mask for assembling a semiconductor device according to item 1 of the scope of patent application, wherein the weight reduction rate of the adhesive layer heated at 180 ° C for 1 hour is less than 5%. 3. The mask for assembling a semiconductor device according to item 1 of the scope of patent application, wherein the adhesive contains polydimethylsiloxane. 4. The mask for assembling a semiconductor device as described in item 1 of the scope of application for a patent, wherein the silicon-based adhesive contains a polyalkylene-based silicon oxide institute and a poly-based silicon oxide institute. 5. The mask for assembling a semiconductor device as described in item 1 of the scope of the patent application, wherein the adhesive layer is a silicon-based adhesive containing a polyorganosiloxane having an average molecular weight of 10,000 to 1,500,000. And formed, and the dynamic elastic modulus at 150 ~ 200 ° C is above 1.0x104Pa. 6. The mask for assembling a semiconductor device according to item 5 of the scope of patent application, wherein the polyorganosiloxane is a polydimethylsiloxane. 7. The mask for assembling a semiconductor device according to item 5 of the scope of patent application, wherein the polyorganosiloxane is a polyalkylalkenylsiloxane. 8 · The semiconductor device assembly cover described in item 5 of the scope of application for patents-540131 t, the scope of application for patents, wherein the silicon-based adhesive contains a polyalkylhydrosiloxane. 9. A method for assembling a semiconductor device, comprising: crimping a mask on a lead frame; mounting the semiconductor element on the lead frame with the mask attached; and then connecting the semiconductor element and the lead frame with gold wires, followed by The resin is then encapsulated in a mold with a resin encapsulant, and the mask is peeled off. The mask is the mask described in the first item of the patent application. -2-
TW91104471A 2001-03-21 2002-03-11 Mask sheet for assembly of semiconductor device and assembling method of semiconductor device TW540131B (en)

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