TWI536515B - 具有散熱結構之半導體封裝元件及其封裝方法 - Google Patents

具有散熱結構之半導體封裝元件及其封裝方法 Download PDF

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TWI536515B
TWI536515B TW099137571A TW99137571A TWI536515B TW I536515 B TWI536515 B TW I536515B TW 099137571 A TW099137571 A TW 099137571A TW 99137571 A TW99137571 A TW 99137571A TW I536515 B TWI536515 B TW I536515B
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Taiwan
Prior art keywords
heat dissipation
die
carrier
dissipation structure
package
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TW099137571A
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English (en)
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TW201220444A (en
Inventor
葉佳峰
吳忠樺
洪紹剛
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創意電子股份有限公司
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Priority to TW099137571A priority Critical patent/TWI536515B/zh
Priority to US12/929,544 priority patent/US8288863B2/en
Publication of TW201220444A publication Critical patent/TW201220444A/zh
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Publication of TWI536515B publication Critical patent/TWI536515B/zh

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Description

具有散熱結構之半導體封裝元件及其封裝方法
本發明係有關於一種半導體封裝元件，特別是有關於一種在晶粒上設置一具高熱傳導係數之散熱結構以增加半導體封裝元件的散熱效果。
請參考第1圖係表示習知技術之球柵式陣列封裝元件之截面示意圖。球柵式陣列封裝元件100具有一半導體晶粒120設置在載板或基板110上，且利用導線130與載板110形成電性連接。在相對於設置晶粒120的載板110的表面上設置複數個連接元件150。半導體晶粒120的熱膨脹係數的最佳範圍大約是2.5×10-6/K至3.5×10-6/K。因此，一般為了散熱的緣故，係在封裝體140及載板110表面上設置一散熱裝置160，如第2圖所示，藉此來增加封裝元件的散熱效率。
目前球柵式陣列塑膠封裝形式屬於常見的封裝應用，其主要散熱機制來自於印刷電路板的大型散熱面積，當大部份的熱產生並透過載板的孔洞與錫球將熱傳導至印刷電路板時，印刷電路板有足夠的空間與空氣以輻射與熱對流方式進行熱交換，進而達到散熱的目的。以散熱比例來看，晶粒產生的熱會有將近85%~95%由此路徑散熱。因此球柵式陣列塑膠封裝可以解決的散熱能力主要取決於印刷電路板的設計，當系統小型化的需求產生時，印刷電路板縮小將會造成此類型封裝體散熱的問題。因此，封裝體上方增加散熱機制是系統段常見的散熱手法，特過此手法增加封裝體頂部的散熱路徑性能，並將晶粒熱源散熱比例由原先的5%~10%提升至15%~25%。但是此種手段的散熱能力有限，即使增加更大的散熱器，可以帶走的熱源將會固定在一比例之下，因此這類型封裝體的散熱極限往往無法突破10 Watts以上的散熱需求。上述無法突破10 Watts以上的散熱極限是受限於封裝體厚度的關係，在打線設計規範(wire bond design rule)中有規範導線頂端與封裝體之間的距離以及導線頂端與連接至載板端的距離不得小於4 mile。因此，晶粒上方的厚度至少要超過8 mile。這之間填充材質其熱傳導係數大多介於0.1 W/m-K~1.0 W/m-K。因此，造成熱傳導上的束縛，即使有改良型的具散熱結構之球柵式陣列封裝元件，其設計與應用上也無法提供間隙較高的縱向熱傳導，僅增強封裝體的平面擴散熱傳導性能，如何提升球柵式陣列塑膠封裝的散熱性能，當務之急就是解決縱向傳導上的低傳導特性。
因此，隨著製程能力提升與電子產品小型化的發展趨勢，積體電路晶片的功率增加與封裝體的散熱需求成為常需要面臨到的問題。因此，如何提供積體電路封裝體具有良好散熱性能是一項重要的課題。
根據上述習知技術之問題，本發明的主要目的係提供一具有高熱傳導係數之散熱結構固定在晶粒上，以提升在半導體封裝元件中縱向傳導性能以及與減少封裝體之間的間隙。
本發明的另一目的係係提供一具高熱傳導係數之散熱結構固定在晶粒上，可以提升外部散熱器的散熱效果，藉此以減少散熱器面積且可以降低使用的成本。
本發明的再一目的係利用設置在晶粒表面上之散熱結構來增加半導體封裝元件的縱向傳導性能，使其結合外部散熱機制應用時可以提高整個封裝元件的散熱能力。
本發明的又一目的係提供一種具有散熱結構之半導體封裝元件可以增加半導體封裝元件的應用層面，當較高功率的晶粒需要評估封裝樣式時，此種形式的封裝元件的設計不需要用到覆晶球柵式陣列封裝元件(FCBGA)的樣式即可以達到與覆晶球柵式陣列封裝元件有相同的散熱效果。
本發明的更一目的係提供一種具有散熱結構之半導體封裝元件可以增加外部散熱結構的散熱效果，藉此可以減小散熱裝置面積與使用較便宜的材質。
根據上述目的，本發明揭露一種具有散熱結構之半導體封裝元件之封裝方法，其包含：提供一晶圓，具有上表面及下表面，配置有複數個晶粒；切割晶圓以得到複數個晶粒，且每一個晶粒具有主動面及背面，且於主動面上配置有複數個焊墊；提供載板，具有上表面及下表面，於上表面配置有複數個第一連接端點及於下表面配置有相對於第一連接端點之複數個第二連接端點且於上表面設置有複數個晶片置放區；貼附每一個晶粒在載板之每一個晶粒置放區上，係將每一個晶粒之該主動面朝上將每一個晶粒之背面貼附在載板之晶粒置放區上；執行一打線製程以形成複數條導線以電性連接複數個晶粒之主動面上之複數焊墊及該載板之上表面之第一連接端點；形成一散熱結構在複數個晶粒之該主動面上且與複數個焊墊電性分離；執行一塑封步驟，以包覆複數個晶粒、散熱結構、複數條導線及載板之上表面以形成一封裝體；形成複數個連接元件在載板之下表面且與配置於下表面之第二連接端點電性連接；及切割封裝體，以形成複數個完成封裝之封裝元件。
根據上述之封裝方法，本發明還揭露一種具有散熱結構之半導體封裝元件，其包含：載板，具有上表面及下表面，於上表面配置有複數個第一連接端點及於下表面配置有相對於第一連接端點之複數個第二連接端點；晶粒，具有一主動面及一背面，且於主動面上配置有複數個焊墊，且以主動面朝上將晶片之背面設置在載板之上表面上；複數條導線，係用以電性連接該晶粒之主動面上之複數個焊墊及載板之第一連接端點；一散熱結構，設置在晶粒之主動面上且介於複數個焊墊之間且與複數個焊墊電性分離；一封裝體，用以包覆晶粒、複數條導線、散熱結構及載板之部份上表面；及複數個連接元件，設置在載板之下表面且與下表面之複數個第二連接端點電性連接。
為了讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉一較佳實施例，並配合所附之圖示，做詳細說明如下。
製造及使用本發明之較佳實施例係詳細說明如下。必須瞭解的是本發明提供了許多可應用的創新概念，在特定的背景技術之下可以做廣泛的實施。此特定的實施例僅以特定的方式表示，以製造及使用本發明，但並非限制本發明的範圍。
首先請參考第3圖，係表示一晶圓之俯視圖。在第3圖中，係提供一晶圓10其具有一上表面(未在圖中表示)其一下表面(未在圖中表示)，且配置有複數個晶粒20。接著，利用切割刀(未在圖中表示)根據晶圓10上的切割線(未在圖中表示)切割該晶圓10，以得到複數個晶粒20，如第4圖所示。
在此第4圖實施例中，每一個晶粒20具有一主動面22及一背面24，且每一個晶粒20之主動面22上配置有複數個焊墊26。接著，同樣參考第4圖，先提供一載板30，具有一上表面34及一下表面36，在上表面34配置有複數個晶粒置放區(虛線區域)32，且在此晶粒置放區32的上表面34配置有複數個第一連接端點40及在下表面36具有相對應於複數個第一連接端點40之複數個第二連接端點42。接著，將已經完成切割且檢測良好的每一顆晶粒20以主動面22朝上的方式，逐一置放在載板30的上表面34之晶粒設置區32上。在此實施例中，更包含一黏著層(未在圖中表示)設置在每一個晶粒20之背面24及載板30之上表面34之間，用以固著晶粒20在載板30之上表面34之上。
接著，請參考第5圖係表示利用導線電性連接晶粒及載板之截面示意圖。在第5圖中，係利用打線製程將複數條導線50形成在晶粒20的主動面22的複數個焊墊26上，且與配置在載板30之上表面34之複數個第一連接端點40電性連接。
接著，請繼續參考第6A圖，在完成打線製程之後，在每一個晶粒20的主動面22上，且在複數個焊墊26之間設置一散熱結構60，此散熱結構60係利用銀膠或是非導電膠固定在晶粒20之主動面22上、且設置在複數個焊墊26之間，並與複數個焊墊26彼此電性分離。使用散熱結構60的目的是由於散熱結構60本身具有高的熱傳導係數而可以提升半導體封裝元件縱向的熱傳導效能。在此實施例中，散熱結構60可以是金屬材料例如銅，其熱傳導係數k為389 W/m-K或是含銅之金屬化合物或是傳導係數k為210 W/m-K的鋁或是含鋁之金屬化合物。此外，在本發明的實施例中，散熱結構60的形狀可以是圓柱體或是方柱體也可以是非均勻的圓體或是方柱體。
接著，請參考第6B圖，係表示執行一塑封步驟以形成封裝體包覆晶粒及導線及部份載板之上表面之截面示意圖。在第6B圖中，係將一高分子材料例如環氧樹脂(epoxy resin)形成在晶粒20上，用以包覆住晶粒20、複數條導線50、散熱結構60及載板30之部份上表面34以形成一封裝體70。
接著，請參考第6C圖，係將複數個連接元件80形成在載板30之下表面36且與下表面36之複數個第二連接端點42電性連接，在此連接元件80可以是錫球(solder ball)。接著，利用切割刀(未在圖中表示)根據該載板30上之切割線(sawing line)(未在圖中表示)切割該載板30以得到複數個已完成封裝之半導體封裝元件。
另外，在本發明中還揭露另一較佳實施例，其製程流程與前述第3圖至第5圖相同，然而不同的是在於：在完成打線製程之後，在每一個晶粒20的主動面22上，且在複數個焊墊26之間設置一散熱結構62，且此散熱結構62的高度大於導線50的弧度，如第7A圖所示。
同樣的，如第7A圖所示之散熱結構62係利用銀膠或是非導電膠固定在在晶粒20之主動面22上且在複數個焊墊26之間，然而和複數個焊墊26電性分離。使用散熱結構62的目的是由於散熱結構62本身具有高的熱傳導係數而可以提升半導體封裝元件縱向的熱傳導效能。在此實施例中，散熱結構62可以是金屬材料例如銅，其熱傳導係數k為389 W/m-K或是含銅之金屬化合物或是傳導係數k為210 W/m-K的鋁或是含鋁之金屬化合物。此外，在本發明的實施例中，散熱結構62的形狀可以是圓柱體或是方柱體也可以是非均勻的圓體或是方柱體。
繼續如第7B圖所示，係將一高分子材料例如環氧樹脂(epoxy resin)形成在晶粒20上，用以包覆住晶粒20、複數條導線50、散熱結構62及載板30之部份上表面34以形成一封裝體70，由於散熱結構62的高度大於導線50弧度，因此當完成塑封步驟之後，散熱結構62與晶粒20係為直接連接之狀態且有部份的散熱結構62會曝露在封裝體70外，此目的同樣是為了藉由散熱結構60的高度減少與封裝體70之間的間隙而可以增加散熱效率，另外，散熱結構62可直接利用熱傳導的方式將晶粒20所產生的熱能向外引出，充分達到散熱之效。
最後請參考第7C圖，係將複數個連接元件80形成在載板30之下表面34且與下表面36之複數個第二連接端點42電性連接，在此連接元件80可以是錫球(solder ball)。接著，利用切割刀(未在圖中表示)根據該載板30上之切割線(sawing line)(未在圖中表示)切割該載板30以得到複數個已完成封裝之半導體封裝元件。
因此，根據上述實施例，此種具有散熱結構之半導體封裝元件可以應用在具散熱結構之球柵式陣列封裝元件(HSBGA,heat slug BGA)封裝元件上，其散熱效果可以達到相似於高效能覆晶晶片球柵式陣列封裝元件(HFCBGA,high performance flip chip BGA)之散熱效能。此外，相較於具有散熱結構(Heat slug)之球柵式陣列封裝元件，本發明所揭露之具有散熱結構之半導體封裝元件具有較簡單的形狀且製程簡單，於成本以及良率控制上較佳。
以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍內。
100．．．球柵式陣列封裝元件
110．．．載板
120．．．半導體晶粒
130．．．導線
140．．．封裝體
150．．．連接元件
160．．．散熱裝置
10．．．晶圓
20．．．晶粒
22．．．主動面
24．．．背面
26．．．焊墊
30．．．載板
32．．．晶粒置放區
34．．．上表面
36．．．下表面
40．．．第一連接端點
42．．．第二連接端點
50．．．導線
60．．．散熱結構
62．．．散熱結構
70．．．封裝體
80．．．連接元件
第1圖係表示習知技術之球柵式陣列封裝元件之截面示意圖；
第2圖係表示習知技術之具散熱機制之球柵式陣列封裝元件之截面示意圖；
第3圖係根據本發明所揭露之技術，表示一晶圓之俯視圖；
第4圖係根據本發明所揭露之技術，表示將複數個晶粒設置在具有晶粒置放區之載板上之截面示意圖；
第5圖係根據本發明所揭露之技術，表示利用打線製程形成導線以電性連接晶粒與載板之截面示意圖；
第6A圖係根據本發明所揭露之技術，表示形成複數個散熱結構在晶粒之主動面上之截面示意圖；
第6B圖係根據本發明所揭露之技術，表示形成高分子材料以包覆具有散熱結構之晶粒之截面示意圖；
第6C圖係根據本發明所揭露之技術，表示已經完成封裝步驟之半導體封裝元件；
第7A圖係根據本發明所揭露之技術，表示形成複數個散熱結構在晶粒之主動面上之截面示意圖；
第7B圖係根據本發明所揭露之技術，表示形成高分子材料以包覆具有散熱結構之晶粒且曝露出散熱結構之截面示意圖；及
第7C圖係根據本發明所揭露之技術，表示已經完成封裝步驟之半導體封裝元件之截面示意圖。
20．．．晶粒
22．．．主動面
24．．．背面
26．．．焊墊
30．．．載板
34．．．上表面
36．．．下表面
40．．．第一連接端點
42．．．第二連接端點
50．．．導線
60．．．散熱結構
70．．．封裝體
80．．．連接元件

Claims (8)

  1. 一種具有散熱結構之半導體封裝元件之封裝方法，其中該散熱結構與晶粒直接接觸且該散熱結構凸出於封裝體外部，包含：提供一晶圓，具有一上表面及一下表面，且配置有複數個晶粒；切割該晶圓，以得到該些晶粒，且每一晶粒具有一主動面及一背面，且於該主動面上配置有複數個焊墊；提供一載板，具有一上表面及一下表面，於該上表面配置有複數個第一連接端點，及於該下表面配置有相對於該些第一連接端點之複數個第二連接端點，且於該上表面設置有複數個晶粒置放區，其中該載板為印刷電路板；貼附每一該些晶粒在該載板之每一該晶粒置放區上，係將該些晶粒之該主動面朝上，將該些晶粒之該背面貼附在該載板之該晶粒置放區上；執行一打線製程以形成複數條導線以電性連接該些晶粒之該主動面上之該些焊墊，及該載板之該上表面之該些第一連接端點；形成一散熱結構在該些晶粒之該主動面上且與該些焊墊電性分離，其中該散熱結構與該晶粒直接接觸；執行一塑封步驟，形成一高分子材料以包覆該些晶粒、該散熱結構、該些導線及該載板之該上表面以形成一封裝體，其中該散熱結構凸出於該封裝體外部；形成複數個連接元件在該載板之該下表面，且與配 置於該下表面之該些第二連接端點電性連接；以及切割該封裝體，以形成複數個完成封裝之封裝元件。
  2. 如申請專利範圍第1項所述之封裝方法，更包含一導電膠在該載板之該上表面與該晶片之該背面之間。
  3. 如申請專利範圍第1項所述之封裝方法，更包含一銀膠在該導電元件及該晶粒之該主動面之間。
  4. 如申請專利範圍第1項所述之封裝方法，更包含一非導電膠在該導電元件及該晶片之該主動面之間。
  5. 一種具有散熱結構之半導體封裝元件，其中該散熱結構與晶粒直接接觸且該散熱結構凸出於封裝體外部，包含：一載板，具有一上表面及一下表面，於該上表面配置有複數個第一連接端點，及於該下表面配置有相對於該些第一連接端點之複數個第二連接端點，其中該載板為印刷電路板；一晶粒，具有一主動面及一背面，且於該主動面上配置有複數個焊墊，且以該主動面朝上，將該晶片之該背面設置在該載板之該上表面上；複數條導線，係用以電性連接該晶粒之該主動面上之該些焊墊，及該載板之該些第一連接端點；一散熱結構，設置在該晶粒之該主動面上且介於該些焊墊之間，且與該些焊墊電性分離，其中該散熱結構與該晶粒直接接觸；一封裝體，用以包覆該晶粒、該些導線、該散熱結 構及該載板之部份該上表面，其中該散熱結構凸出於該封裝體外部；以及複數個連接元件，設置在該載板之該下表面，且與該下表面之該些第二連接端點電性連接。
  6. 如申請專利範圍第5項所述之半導體封裝元件，更包含一導電膠在該載板之該上表面與該晶片之該背面之間。
  7. 如申請專利範圍第5項所述之半導體封裝元件，更包含一銀膠在該散熱結構及該晶片之該主動面之間。
  8. 如申請專利範圍第5項所述之半導體封裝元件，更包含一非導電膠在該散熱結構及該晶片之該主動面之間。
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