TWI584428B - 降低封裝翹曲之散熱型半導體封裝構造 - Google Patents

降低封裝翹曲之散熱型半導體封裝構造 Download PDF

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TWI584428B
TWI584428B TW105118191A TW105118191A TWI584428B TW I584428 B TWI584428 B TW I584428B TW 105118191 A TW105118191 A TW 105118191A TW 105118191 A TW105118191 A TW 105118191A TW I584428 B TWI584428 B TW I584428B
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encapsulant
substrate
semiconductor package
heat
package structure
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TW201743417A (zh
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周佳仁
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力成科技股份有限公司
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Description

降低封裝翹曲之散熱型半導體封裝構造
本發明係有關於半導體晶片封裝領域，特別係有關於一種降低封裝翹曲之散熱型半導體封裝構造。
在半導體封裝領域中，為了保護半導體晶片，通常會在晶片周圍加入密封晶片之絕緣物質，例如模封膠體。請參閱第1圖，習知半導體封裝構造100係包含一基板110、一晶片120、一封膠體130、一黏晶層160以及複數個銲球170。基板110具有一內表面111。晶片120設置於基板110之內表面111上，可利用複數個銲線122電性連接該晶片120至該基板110。封膠體130形成於基板110之內表面111上。隨著半導體封裝構造100在高頻率與高效能的運算之下，半導體封裝構造100之晶片120會產生發熱的情況。請參閱第2圖，當基板110的尺寸是12公分(cm) X 12公分(cm)的情況下，在半導體封裝構造100的所有封裝元件的熱膨脹係數達到平衡之後，半導體封裝構造100之封裝翹曲度係約為+20微米(μm)。
為了增加散熱效率，有人提出在半導體封裝構造上加裝散熱片。請參閱第3圖，習知散熱型半導體封裝構造200係包含上述散熱型半導體封裝構造100的相同元件外，更裝設了銅材質 等散熱較佳之金屬散熱片250，利用一黏著層251將散熱片250黏著於封膠體130之頂面131。除了原本封裝元件的熱膨脹係數影響之外，散熱片250的熱膨脹係數亦會影響半導體封裝構造200之封裝翹曲度，這是因為散熱片250的熱膨脹係數與半導體封裝構造200的其它封裝元件的熱膨脹係數之間的不匹配更為明顯，散熱片250與封膠體130之間將產生熱應力，使得半導體封裝構造200產生嚴重的翹曲現象。請參閱第4圖，在半導體封裝構造200除了散熱片250的其它封裝元件的熱膨脹係數如第1圖的半導體封裝構造100達到平衡之後，加裝銅散熱片250的半導體封裝構造200之封裝翹曲度係將變化為-89微米(μm)。
因此，半導體封裝構造加入散熱片後，其熱膨脹係數不匹配的問題係更加明顯，且當散熱片的尺寸越大時，散熱片之周邊與封膠體之周邊的熱應力係變的更大並造成半導體封裝構造的翹曲量過大，進而造成銲球連接問題。因此，在加裝各式不同散熱片之後，所有的封裝元件的熱膨脹係數需要經常地作重新調整。
為了解決上述之問題，本發明之主要目的係在於提供一種降低封裝翹曲之散熱型半導體封裝構造，以多封膠體的多重密封結構設計降低在加裝散熱片之後所造成的封裝翹曲度，封裝元件的熱膨脹係數可以不需要經常地作重新調整。
本發明的目的及解決其技術問題是採用以下技術方 案來實現的。本發明揭示一種降低封裝翹曲之散熱型半導體封裝構造，包含一基板、一晶片、一第一封膠體、一第二封膠體以及一散熱片。該基板係具有一內表面。該晶片係設置於該基板之該內表面上。該第一封膠體係形成於該基板之該內表面上，該第一封膠體係密封該晶片並覆蓋該基板之該內表面的一部分，但該第一封膠體不覆蓋該基板之該內表面之一周邊區域，且該第一封膠體係具有一頂面以及複數個側面。該第二封膠體係形成於該第一封膠體之該頂面上，並包覆該第一封膠體之該些側面及該第一封膠體之該頂面，其中該第二封膠體之楊氏模數係小於該第一封膠體之楊氏模數。該散熱片係貼附於該第二封膠體上。
本發明的目的及解決其技術問題還可採用以下技術措施進一步實現。
在前述半導體封裝構造中，該第二封膠體係可更延伸覆蓋至該基板之該周邊區域，以完全密封該第一封膠體，故該第一封膠體係不外露於該半導體封裝構造。
在前述半導體封裝構造中，該第二封膠體在該第一封膠體之該頂面至該散熱片之間係形成為一翹曲緩衝層，該散熱片之翹曲度不直接影響至第一封膠體，故該第二封膠體具有可彈性緩衝該散熱片與該第一封膠體之不同熱膨脹係數之間的影響，並且該第二封膠體係可吸收該散熱片之變形量，進而降低翹曲的情況。
在前述半導體封裝構造中，該第二封膠體係可直接 黏接該散熱片，故該第二封膠體係可作為該散熱片與該第一封膠體之熱應力緩衝中介層，使得該散熱片與該第一封膠體不直接貼附接觸，以減少兩高楊氏模數材料間的入膨脹係數不匹配。
在前述半導體封裝構造中，該散熱片係可為金屬材質，故該散熱片係可選用良好散熱的金屬。
在前述半導體封裝構造中，係可另包含一黏晶層，其係可設置於該基板與該晶片之間，以黏接該基板與該晶片。
在前述半導體封裝構造中，可另包含複數個銲球，其係可設置於該基板之下方。
在前述半導體封裝構造中，該第一封裝體之楊氏模數是較佳為該第二封膠體之楊氏模數的三倍或以上。
在前述半導體封裝構造中，該基板係具體地包含複數個位在該內表面之線路、複數個縱向電性導通之導通孔以及複數個位於該基板之外表面之外接墊，該些線路係更延伸至該周邊區域，以增加該基板之散熱能力。
藉由上述的技術手段，本發明可以達成降低封裝材料的熱膨脹係數對於封裝翹曲度的影響，進而提高散熱效能且不會造成嚴重的封裝翹曲問題。換句話說，半導體封裝構造對於來自基板、封膠體以及散熱片之厚薄或熱膨脹係數大小係可以有更大的可容許彈性範圍。因此，封裝材料的熱膨脹係數可以有比較大的容許範圍，半導體封裝構造的封裝翹曲度也可以得到較好的控制。
100‧‧‧半導體封裝構造
110‧‧‧基板
111‧‧‧內表面
120‧‧‧晶片
121‧‧‧銲墊
122‧‧‧銲線
130‧‧‧封膠體
131‧‧‧頂面
160‧‧‧黏晶層
170‧‧‧銲球
200‧‧‧半導體封裝構造
250‧‧‧散熱片
251‧‧‧黏著層
300‧‧‧半導體封裝構造
310‧‧‧基板
311‧‧‧內表面
312‧‧‧周邊區域
313‧‧‧線路
314‧‧‧導通孔
315‧‧‧外接墊
320‧‧‧晶片
321‧‧‧銲墊
322‧‧‧銲線
330‧‧‧第一封膠體
331‧‧‧頂面
332‧‧‧側面
340‧‧‧第二封膠體
350‧‧‧散熱片
360‧‧‧黏晶層
370‧‧‧銲球
第1圖：繪示習知半導體封裝構造之截面示意圖。
第2圖：繪示習知半導體封裝構造之封裝翹曲度之示意圖。
第3圖：繪示習知散熱型半導體封裝構造之截面示意圖。
第4圖：繪示習知散熱型半導體封裝構造之封裝翹曲度之示意圖。
第5圖：依據本發明之一具體實施例，一種降低封裝翹曲之散熱型半導體封裝構造之截面示意圖。
第6圖：沿第5圖之6-6剖線之剖視圖。
第7圖：依據本發明之一具體實施例，繪示該散熱型半導體封裝構造之封裝翹曲度之示意圖。
第8A圖：繪示習知具有散熱片之散熱型半導體封裝構造之另一個封裝翹曲度之示意圖。
第8B圖：依據本發明之一具體實施例，繪示該散熱型半導體封裝構造之另一個封裝翹曲度之示意圖。
以下將配合所附圖示詳細說明本發明之實施例，然應注意的是，該些圖示均為簡化之示意圖，僅以示意方法來說明本發明之基本架構或實施方法，故僅顯示與本案有關之元件與組合關係，圖中所顯示之元件並非以實際實施之數目、形狀、尺寸做等比例繪製，某些尺寸比例與其他相關尺寸比例或已誇張或是簡化處理，以提供更清楚的描述。實際實施之數目、形狀及尺寸 比例為一種選置性之設計，詳細之元件佈局可能更為複雜。
依據本發明之一具體實施例，一種降低封裝翹曲之散熱型半導體封裝構造300舉例說明於第5圖之截面示意圖。一種降低封裝翹曲之散熱型半導體封裝構造300係包含一基板310、一晶片320、一第一封膠體330、一第二封膠體340以及一散熱片350。第6圖係為沿第5圖之6-6剖線之剖視圖。第7圖係繪示該散熱型半導體封裝構造300之封裝翹曲度之示意圖。
請參閱第5圖，該基板310係具有一內表面311，以作為晶片安裝表面。該基板310係為用以承載該晶片320之封裝載板並具有晶片導電連接之傳輸路徑。具體地，該基板310係包含複數個設置在該內表面311之線路313、複數個縱向電性導通之導通孔314以及複數個位於該基板310之外表面之外接墊315。部份之線路313係經由該些導通孔314電性連接至對應之該些外接墊315。該半導體封裝構造300係可另包含複數個銲球370，其係可設置於該基板310之外表面。該些銲球370係可接合於該些外接墊315，故該些銲球370係具有供對外電性連接之功能。該半導體封裝構造300係可具有球格陣列封裝類型。
該晶片320係設置於該基板310之該內表面311上。該晶片320係可為具有積體電路之半導體晶片並具有複數個銲墊321。該些銲墊321各有對應一銲線322電性連接至該基板310之該些線路313。該半導體封裝構造300係可另包含一黏晶層360係可設置於該基板310與該晶片320之間，用以黏接該晶片320至該基 板310。
該第一封膠體330係形成於該基板310之該內表面311上，該第一封膠體330係密封該晶片320並覆蓋該基板310之該內表面311的一部分，但該第一封膠體330不覆蓋該基板310之該內表面311之一周邊區域312。該第一封膠體330係具有一頂面331以及複數個側面332。在本實施例中，該第一封膠體330係為模封形成之環氧模封化合物(Epoxy Molding Compound,EMC)。該基板310之該些線路313係更延伸至該周邊區域312，即該些線路313係超過該第一封膠體330在該基板310上之覆蓋區域，以增加該第二封膠體340對整體封裝體的變形之吸收能力。
該第二封膠體340係形成於該第一封膠體330之該頂面331上，並包覆該第一封膠體330之該些側面332及該第一封膠體330之該頂面331。該第二封膠體340係可更延伸覆蓋至該基板310之該周邊區域312，以完全密封該第一封膠體330，故該第一封膠體330係不外露於該半導體封裝構造300。其中，該第二封膠體340之楊氏模數(Young's modulus)係小於該第一封膠體330之楊氏模數且可提供接著功用之材料。該第一封膠體330之楊氏模數是該第二封膠體340之楊氏模數的三倍或以上。
該第二封膠體340在該第一封膠體330之該頂面331至該散熱片350之間係形成為一翹曲緩衝層，其厚度係介於為0.05mm至0.2mm之間，故該散熱片350之翹曲度不直接影響至第一封膠體330，該散熱片350之厚度係可介於0.05mm至0.3mm之 間。該第二封膠體340係為彈性緩衝的間隔物，在該散熱片350與該第一封膠體330之間，改善該散熱片350與該第一封膠體330之間不同的熱膨脹係數引起之熱應力影響，該第二封膠體340係可吸收該散熱片350之變形量，進而降低封裝翹曲的情況。該第一封膠體330之對應相鄰之該些側面332之間之厚度係可介於0.2mm至1.0mm之間。因此，該第二封膠體340係可緊密地包覆該第一封膠體330之該頂面331以及該些側面332。如第6圖所示，該第二封膠體340係環燒該第一封膠體330之周邊，該基板310之內表面311無外露於該第二封膠體340之區域。更進一步地說明，該第二封膠體340係可作為介於該第一封膠體330與該散熱片350之間的一載板，故該第二封膠體340之厚度係可不被限制。
在彈性材料承受正向應力時會產生正向應變，在形變量沒有超過對應材料的一定彈性限度時，定義正向應力與正向應變的比值為這種材料的楊氏模數。楊氏模數之公式記為。在這楊氏模數之公式中，E表示楊氏模數，σ表示正向應力，表示正向應變。在本實施例中，該第二封膠體340係應用於黏著金屬與覆蓋傳統封膠體，其材質係可包含具有低楊氏模數介於0.01~5GPa之接著膠材質，如：環氧樹脂(Epoxy Resin)、含矽樹脂(Silicon Resin)、聚醯亞胺樹脂(Polyimide Resin)與其添加入到高導熱材質增加導熱能力，如：銀，矽等金屬粒子。
更具體地，該第二封膠體340係可直接黏接該散熱片350，故該第二封膠體340係可為該散熱片350與該第一封膠體 330之中介層，使得該散熱片350與該第一封膠體330不直接貼附接觸，以減少兩高楊氏模數材料間的入膨脹係數不匹配。該散熱片350係貼附於該第二封膠體340上而不直接與該第一封膠體330接觸。該散熱片350係可為銅或其他金屬材質，故該散熱片350係可利用熱傳導模式來散熱。在本實施例中，在該散熱片350之尺寸即使變大，例如：15公分x15公分，該第一封膠體330的熱應力影響係不會很大，因為在該第二封膠體340的間隔下，該散熱片350的熱漲冷縮不影響該第一封膠體330。因其該第一封裝體330之楊氏模數是該第二封膠體340之楊氏模數的3倍以上，故該第二封膠體340係可有效吸收該第一封膠體330與該散熱片350之間的熱應力與具有較大的可容許彈性變形，故該散熱片350與該半導體封裝構造300的熱應力干涉係可變小，且該散熱片350的熱脹冷縮對該半導體封裝構造300形狀干涉亦變小，進而該半導體封裝構造300之封裝翹曲度可達到降低的效果。請參閱第7圖，在該基板310與該散熱片350之尺寸為15公分x15公分時，該半導體封裝構造300之封裝翹曲度係為-55微米(μm)。相較於第3圖的半導體封裝構造200，在相同的材料的熱膨脹係數下，加裝散熱片後翹曲度可以從-89微米降低到-55微米。
第8A圖係繪示習知具有散熱片之散熱型半導體封裝構造之另一個封裝翹曲度之示意圖。第8B圖係依據本發明之一具體實施例，繪示該散熱型半導體封裝構造之另一個封裝翹曲度之示意圖。更具體地，請參閱第8A圖並配合第3圖，習知散熱型半導 體封裝構造200在改變封膠體等封裝元件的熱膨脹係數與加裝散熱片250之情況下，會產生一個較為平衡之封裝翹曲度，經測試為+63微米。請參閱第8B圖並配合第5圖，本發明之半導體封裝構造300在改變並使用上述相同的熱膨脹係數變化的封裝元件與加裝散熱片350之情況下，會產生另一封裝翹曲度，經測試為-52微米。因此，藉由比對第3、4與8A圖，習知加裝散熱片250之散熱型半導體封裝構造200對於封裝材料的熱膨脹係數有封裝翹曲之敏感度，其變化係為-89微米至+63微米，故隨著封裝材料的熱膨脹係數的調整變化，會使得該半導體封裝構造200之翹曲度亦有明顯的變化。藉由比對第5、7、8B圖，本發明之半導體封裝構造300在相同的封裝元件之熱膨脹係數調整條件下，其封裝翹曲度的變化係影響不大，經測試其變化係為-55微米至-52微米，故可以判斷封裝材料的熱膨脹係數對於該半導體封裝構造300之封裝翹曲度的影響不大。
藉此，本發明可以達成降低封裝材料的熱膨脹係數不匹配對封裝翹曲度的影響，進而利用金屬散熱片提高散熱效能且不會造成嚴重的封裝翹曲問題。也就是說，本發明之散熱型半導體封裝構造對於來自基板、封膠體以及散熱片之厚薄或熱膨脹係數大小的影響係可有更大的彈性容許範圍，封裝材料的熱膨脹係數可以有比較大的容許範圍，半導體封裝構造的封裝翹曲度也可以得到較好的控制，亦可更改善銲球接合不良的問題。
以上所揭露的僅為本發明較佳實施例而已，當然不 能以此來限定本發明之權利範圍，因此依本發明權利要求所作的等同變化，仍屬本發明所涵蓋的範圍。
300‧‧‧半導體封裝構造
310‧‧‧基板
311‧‧‧內表面
312‧‧‧周邊區域
313‧‧‧線路
314‧‧‧導通孔
315‧‧‧外接墊
320‧‧‧晶片
321‧‧‧銲墊
322‧‧‧銲線
330‧‧‧第一封膠體
331‧‧‧頂面
332‧‧‧側面
340‧‧‧第二封膠體
350‧‧‧散熱片
360‧‧‧黏晶層
370‧‧‧銲球

Claims (8)

  1. 一種降低封裝翹曲之散熱型半導體封裝構造，包含：一基板，係具有一內表面；一晶片，係設置於該基板之該內表面上；一第一封膠體，係形成於該基板之該內表面上，該第一封膠體係密封該晶片並覆蓋該基板之該內表面的一部分，但該第一封膠體不覆蓋該基板之該內表面之一周邊區域，且該第一封膠體係具有一頂面以及複數個側面；一第二封膠體，係形成於該第一封膠體之該頂面上，並包覆該第一封膠體之該些側面及該第一封膠體之該頂面，其中該第二封膠體之楊氏模數係小於該第一封膠體之楊氏模數；以及一散熱片，係貼附於該第二封膠體上，其中該第二封膠體在該第一封膠體之該頂面至該散熱片之間係形成為一翹曲緩衝層。
  2. 如申請專利範圍第1項所述之降低封裝翹曲之散熱型半導體封裝構造，其中該第二封膠體係更延伸覆蓋至該基板之該周邊區域，以完全密封該第一封膠體。
  3. 如申請專利範圍第1項所述之降低封裝翹曲之散熱型半導體封裝構造，其中該第二封膠體係直接黏接該散熱片。
  4. 如申請專利範圍第1項所述之降低封裝翹曲之散熱型半導體封裝構造，其中該散熱片係為金屬材質。
  5. 如申請專利範圍第1項所述之降低封裝翹曲之散熱型半導體封裝構造，另包含一黏晶層，其係設置於該基板與該晶片之 間。
  6. 、如申請專利範圍第1項所述之降低封裝翹曲之散熱型半導體封裝構造，另包含複數個銲球，其係設置於該基板之下方。
  7. 、如申請專利範圍第1項所述之降低封裝翹曲之散熱型半導體封裝構造，其中該第一封裝體之楊氏模數是該第二封膠體之楊氏模數的三倍或以上。
  8. 如申請專利範圍第1至7項任一項所述之降低封裝翹曲之散熱型半導體封裝構造，其中該基板係包含複數個位在該內表面之線路、複數個縱向電性導通之導通孔以及複數個位於該基板之外表面之外接墊，該些線路係更延伸至該周邊區域。
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