HK1244064B - 曝光裝置、曝光方法以及用於製造設備的方法 - Google Patents

曝光裝置、曝光方法以及用於製造設備的方法

Info

Publication number
HK1244064B
HK1244064B HK18103021.7A HK18103021A HK1244064B HK 1244064 B HK1244064 B HK 1244064B HK 18103021 A HK18103021 A HK 18103021A HK 1244064 B HK1244064 B HK 1244064B
Authority
HK
Hong Kong
Prior art keywords
exposure
liquid immersion
optical system
projection optical
exposure apparatus
Prior art date
Application number
HK18103021.7A
Other languages
English (en)
Inventor
Soichi Owa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35787091&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1244064(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1244064B publication Critical patent/HK1244064B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal Substances (AREA)
  • Prostheses (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Eyeglasses (AREA)
  • Exposure Control For Cameras (AREA)
HK18103021.7A 2004-08-03 2018-03-02 曝光裝置、曝光方法以及用於製造設備的方法 HK1244064B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004227226 2004-08-03
JP2005079113 2005-03-18

Publications (1)

Publication Number Publication Date
HK1244064B true HK1244064B (zh) 2019-11-29

Family

ID=35787091

Family Applications (5)

Application Number Title Priority Date Filing Date
HK07112533.2A HK1104676A1 (en) 2004-08-03 2007-11-16 Exposure equipment, exposure method and device manufacturing method
HK16111880.2A HK1223688A1 (zh) 2004-08-03 2011-03-07 曝光裝置、曝光方法及組件製造方法
HK16100769.1A HK1212782A1 (zh) 2004-08-03 2016-01-22 曝光裝置的控制方法
HK18103000.2A HK1243776B (zh) 2004-08-03 2018-03-01 曝光裝置、曝光方法及組件製造方法
HK18103021.7A HK1244064B (zh) 2004-08-03 2018-03-02 曝光裝置、曝光方法以及用於製造設備的方法

Family Applications Before (4)

Application Number Title Priority Date Filing Date
HK07112533.2A HK1104676A1 (en) 2004-08-03 2007-11-16 Exposure equipment, exposure method and device manufacturing method
HK16111880.2A HK1223688A1 (zh) 2004-08-03 2011-03-07 曝光裝置、曝光方法及組件製造方法
HK16100769.1A HK1212782A1 (zh) 2004-08-03 2016-01-22 曝光裝置的控制方法
HK18103000.2A HK1243776B (zh) 2004-08-03 2018-03-01 曝光裝置、曝光方法及組件製造方法

Country Status (10)

Country Link
US (2) US8169591B2 (zh)
EP (5) EP3048485B1 (zh)
JP (2) JP5152356B2 (zh)
KR (3) KR101354801B1 (zh)
CN (3) CN105204296B (zh)
AT (1) ATE470235T1 (zh)
DE (1) DE602005021653D1 (zh)
HK (5) HK1104676A1 (zh)
TW (1) TWI460544B (zh)
WO (1) WO2006013806A1 (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
KR101354801B1 (ko) 2004-08-03 2014-01-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101002303B (zh) * 2004-12-07 2012-05-23 尼康股份有限公司 曝光装置及元件制造方法
US20090262316A1 (en) 2005-01-31 2009-10-22 Nikon Corporation Exposure apparatus and method for producing device
US8692973B2 (en) * 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
EP1865539A4 (en) * 2005-03-30 2011-09-07 Nikon Corp METHOD FOR DETERMINING EXPOSURE CONDITIONS, EXPOSURE METHOD, EXPOSURE DEVICE, AND DEVICE PRODUCTION APPARATUS
JP5217239B2 (ja) 2006-05-18 2013-06-19 株式会社ニコン 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法
TW200818256A (en) 2006-05-22 2008-04-16 Nikon Corp Exposure method and apparatus, maintenance method, and device manufacturing method
JP5019170B2 (ja) 2006-05-23 2012-09-05 株式会社ニコン メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
CN101390194B (zh) 2006-06-30 2011-04-20 株式会社尼康 维修方法、曝光方法及装置、以及元件制造方法
JP2008034801A (ja) * 2006-06-30 2008-02-14 Canon Inc 露光装置およびデバイス製造方法
JP5151981B2 (ja) 2006-08-30 2013-02-27 株式会社ニコン 露光装置及びデバイス製造方法
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US20080158531A1 (en) 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
WO2008059916A1 (fr) * 2006-11-15 2008-05-22 Nikon Corporation Appareil et procédé d'exposition et procédé de fabrication de dispositif
US20080156356A1 (en) 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
KR100830586B1 (ko) 2006-12-12 2008-05-21 삼성전자주식회사 기판을 노광하는 장치 및 방법
US8164736B2 (en) 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
JP2009031603A (ja) * 2007-07-27 2009-02-12 Canon Inc 投影光学系、露光装置及びデバイス製造方法
DE102007043896A1 (de) 2007-09-14 2009-04-02 Carl Zeiss Smt Ag Mikrooptik zur Messung der Position eines Luftbildes
JP2009086038A (ja) * 2007-09-27 2009-04-23 Canon Inc 投影光学系、露光装置及びデバイス製造方法
US8654306B2 (en) 2008-04-14 2014-02-18 Nikon Corporation Exposure apparatus, cleaning method, and device fabricating method
US20110008734A1 (en) * 2009-06-19 2011-01-13 Nikon Corporation Exposure apparatus and device manufacturing method
US9651873B2 (en) * 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
CN108475025B (zh) * 2015-11-20 2021-02-26 Asml荷兰有限公司 光刻设备和操作光刻设备的方法
WO2018007119A1 (en) * 2016-07-04 2018-01-11 Asml Netherlands B.V. An inspection substrate and an inspection method
CN107991843B (zh) * 2017-12-21 2023-07-21 浙江启尔机电技术有限公司 一种用于浸没式光刻机的微流道气液分离回收装置
US10690486B2 (en) * 2018-07-03 2020-06-23 Amo Development, Llc Water-immersed high precision laser focus spot size measurement apparatus
WO2020064265A1 (en) 2018-09-24 2020-04-02 Asml Netherlands B.V. A process tool and an inspection method

Family Cites Families (136)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS5825607A (ja) * 1981-08-08 1983-02-15 Canon Inc 投影装置
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPH0782981B2 (ja) 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
US4801352A (en) 1986-12-30 1989-01-31 Image Micro Systems, Inc. Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation
US4931050A (en) 1988-04-13 1990-06-05 Shiley Infusaid Inc. Constant pressure variable flow pump
DE69033002T2 (de) 1989-10-02 1999-09-02 Canon K.K. Belichtungsvorrichtung
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JP2830492B2 (ja) 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JP3109852B2 (ja) * 1991-04-16 2000-11-20 キヤノン株式会社 投影露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5559338A (en) * 1994-10-04 1996-09-24 Excimer Laser Systems, Inc. Deep ultraviolet optical imaging system for microlithography and/or microfabrication
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08330229A (ja) 1995-06-01 1996-12-13 Fujitsu Ltd 半導体結晶成長方法
JP3137174B2 (ja) 1995-09-08 2001-02-19 横河電機株式会社 Ｉｃテスタのテストヘッド
KR100228036B1 (ko) 1996-02-09 1999-11-01 니시무로 타이죠 표면에너지 분포측정장치 및 측정방법
US5885134A (en) 1996-04-18 1999-03-23 Ebara Corporation Polishing apparatus
JPH09320933A (ja) * 1996-05-28 1997-12-12 Nikon Corp 走査型露光装置
US5870223A (en) 1996-07-22 1999-02-09 Nikon Corporation Microscope system for liquid immersion observation
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
DE69735016T2 (de) 1996-12-24 2006-08-17 Asml Netherlands B.V. Lithographisches Gerät mit zwei Objekthaltern
US5959441A (en) 1997-04-03 1999-09-28 Dell Usa, L.P. Voltage mode control for a multiphase DC power regulator
JPH10284412A (ja) 1997-04-10 1998-10-23 Nikon Corp 外部と光を授受するステージ装置及び投影露光装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH10335236A (ja) 1997-05-28 1998-12-18 Nikon Corp 露光装置、その光洗浄方法及び半導体デバイスの製造方法
JPH10335235A (ja) 1997-05-28 1998-12-18 Nikon Corp 露光装置、その光洗浄方法及び半導体デバイスの製造方法
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH11135428A (ja) * 1997-08-27 1999-05-21 Nikon Corp 投影露光方法及び投影露光装置
US6563565B2 (en) 1997-08-27 2003-05-13 Nikon Corporation Apparatus and method for projection exposure
DE19744246A1 (de) 1997-10-07 1999-04-29 Hajo Prof Dr Suhr Verfahren und Vorrichtung zur Videomikroskopie disperser Partikelverteilungen
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
WO1999027568A1 (fr) 1997-11-21 1999-06-03 Nikon Corporation Graveur de motifs a projection et procede de sensibilisation a projection
JPH11283903A (ja) * 1998-03-30 1999-10-15 Nikon Corp 投影光学系検査装置及び同装置を備えた投影露光装置
KR20010033118A (ko) * 1997-12-18 2001-04-25 오노 시게오 스테이지 장치 및 노광장치
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US5997963A (en) 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
US6819414B1 (en) 1998-05-19 2004-11-16 Nikon Corporation Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method
JP4505989B2 (ja) 1998-05-19 2010-07-21 株式会社ニコン 収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
DE19825518C2 (de) * 1998-06-08 2001-10-04 Fresenius Ag Vorrichtung zur Messung von Parameteränderungen an lichtdurchlässigen Objekten
JP2934726B2 (ja) 1998-08-20 1999-08-16 株式会社ニコン 投影露光方法
EP1018669B1 (en) 1999-01-08 2006-03-01 ASML Netherlands B.V. Projection lithography with servo control
KR100427563B1 (ko) 1999-04-16 2004-04-27 가부시키가이샤 후지킨 병렬분류형 유체공급장치와, 이것에 사용하는 유체가변형압력식 유량제어방법 및 유체가변형 압력식 유량제어장치
WO2001023935A1 (fr) 1999-09-29 2001-04-05 Nikon Corporation Procede et dispositif d'exposition par projection, et systeme optique de projection
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP2001267239A (ja) 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW588222B (en) 2000-02-10 2004-05-21 Asml Netherlands Bv Cooling of voice coil motors in lithographic projection apparatus
US6472643B1 (en) 2000-03-07 2002-10-29 Silicon Valley Group, Inc. Substrate thermal management system
DE10011130A1 (de) 2000-03-10 2001-09-13 Mannesmann Vdo Ag Entlüftungseinrichtung für einen Kraftstoffbehälter
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
JP2001345245A (ja) 2000-05-31 2001-12-14 Nikon Corp 露光方法及び露光装置並びにデバイス製造方法
JP4692862B2 (ja) 2000-08-28 2011-06-01 株式会社ニコン 検査装置、該検査装置を備えた露光装置、およびマイクロデバイスの製造方法
EP1231513A1 (en) * 2001-02-08 2002-08-14 Asm Lithography B.V. Lithographic projection apparatus with adjustable focal surface
EP1231514A1 (en) 2001-02-13 2002-08-14 Asm Lithography B.V. Measurement of wavefront aberrations in a lithographic projection apparatus
DE60223956T3 (de) 2001-03-14 2011-05-19 Hitachi Information & Control Solutions, Ltd., Hitachi Untersuchungsgerät und System zur Untersuchung von Fremdkörpern in mit Flüssigkeit gefüllten Behältern
JP2002343706A (ja) * 2001-05-18 2002-11-29 Nikon Corp ステージ装置及びステージの駆動方法、露光装置及び露光方法、並びにデバイス及びその製造方法
JP2002365027A (ja) * 2001-06-07 2002-12-18 Japan Science & Technology Corp 表面観察装置
KR20030002514A (ko) 2001-06-29 2003-01-09 삼성전자 주식회사 웨이퍼가 장착될 척을 냉각시키기 위한 냉매 경로에서의냉매 누설을 감지할 수 있는 냉각 시스템
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JPWO2003065427A1 (ja) 2002-01-29 2005-05-26 株式会社ニコン 露光装置及び露光方法
JP4554357B2 (ja) 2002-05-07 2010-09-29 マイクロファブリカ インク 電気化学的に成型加工され、気密的に封止された微細構造および上記微細構造を製造するための方法および装置
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US20040055803A1 (en) 2002-09-24 2004-03-25 Patmont Motor Werks Variable speed transmission for scooter
SG2010050110A (en) * 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
CN101470360B (zh) 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
EP1420299B1 (en) * 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
EP1429188B1 (en) † 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
JP3953460B2 (ja) 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
FR2847670B1 (fr) 2002-11-26 2005-06-10 Sc2N Sa Detecteur par voie optique de la presence de bulles de gaz dans un liquide
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
JP4232449B2 (ja) * 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
KR101157002B1 (ko) * 2002-12-10 2012-06-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20110086130A (ko) 2002-12-10 2011-07-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
DE10257766A1 (de) * 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
SG152063A1 (en) * 2002-12-10 2009-05-29 Nikon Corp Exposure apparatus and method for producing device
SG150388A1 (en) 2002-12-10 2009-03-30 Nikon Corp Exposure apparatus and method for producing device
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
KR101036114B1 (ko) 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
TWI254841B (en) 2002-12-23 2006-05-11 Asml Netherlands Bv Lithographic apparatus
JP2004205698A (ja) 2002-12-24 2004-07-22 Nikon Corp 投影光学系、露光装置および露光方法
KR101129213B1 (ko) 2003-04-10 2012-03-27 가부시키가이샤 니콘 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로
KR101178756B1 (ko) * 2003-04-11 2012-08-31 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
EP2216685B1 (en) 2003-06-19 2012-06-27 Nikon Corporation Exposure apparatus and device manufacturing method
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1494079B1 (en) 2003-06-27 2008-01-02 ASML Netherlands B.V. Lithographic Apparatus
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2853943B1 (en) * 2003-07-08 2016-11-16 Nikon Corporation Wafer table for immersion lithography
EP1500982A1 (en) * 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005010960A1 (ja) 2003-07-25 2005-02-03 Nikon Corporation 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
JP4513299B2 (ja) * 2003-10-02 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP2005136374A (ja) 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2267536B1 (en) 2003-10-28 2017-04-19 ASML Netherlands B.V. Lithographic apparatus
TWI361450B (en) 2003-10-31 2012-04-01 Nikon Corp Platen, stage device, exposure device and exposure method
JP2005191394A (ja) 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
JP2005209705A (ja) * 2004-01-20 2005-08-04 Nikon Corp 露光装置及びデバイス製造方法
CN100552879C (zh) * 2004-02-02 2009-10-21 尼康股份有限公司 载台驱动方法及载台装置、曝光装置、及元件制造方法
EP1768169B9 (en) 2004-06-04 2013-03-06 Nikon Corporation Exposure apparatus, exposure method, and device producing method
EP3255652B1 (en) * 2004-06-21 2018-07-25 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
KR101354801B1 (ko) 2004-08-03 2014-01-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7274883B2 (en) * 2005-03-22 2007-09-25 Marvell International Technology Ltd. Hybrid printer and related system and method

Also Published As

Publication number Publication date
KR101230712B1 (ko) 2013-02-07
EP3258318B1 (en) 2019-02-27
EP3267257B1 (en) 2019-02-13
HK1104676A1 (en) 2008-01-18
HK1212782A1 (zh) 2016-06-17
EP3048485A1 (en) 2016-07-27
HK1223688A1 (zh) 2017-08-04
HK1243776B (zh) 2019-11-22
EP3258318A1 (en) 2017-12-20
EP1791164B1 (en) 2010-06-02
DE602005021653D1 (de) 2010-07-15
JP2011097121A (ja) 2011-05-12
US20120176589A1 (en) 2012-07-12
EP2226682A3 (en) 2014-12-24
CN105204296B (zh) 2018-07-17
EP1791164A4 (en) 2008-12-10
US9063436B2 (en) 2015-06-23
ATE470235T1 (de) 2010-06-15
US8169591B2 (en) 2012-05-01
US20080084546A1 (en) 2008-04-10
KR20070041553A (ko) 2007-04-18
KR101354801B1 (ko) 2014-01-22
KR101337007B1 (ko) 2013-12-06
EP1791164A1 (en) 2007-05-30
EP3048485B1 (en) 2017-09-27
EP2226682A2 (en) 2010-09-08
KR20120007082A (ko) 2012-01-19
KR20120128167A (ko) 2012-11-26
CN102998910A (zh) 2013-03-27
EP1791164B2 (en) 2014-08-20
CN101799636A (zh) 2010-08-11
WO2006013806A1 (ja) 2006-02-09
CN101799636B (zh) 2013-04-10
EP3267257A1 (en) 2018-01-10
JP2012129560A (ja) 2012-07-05
CN105204296A (zh) 2015-12-30
TWI460544B (zh) 2014-11-11
JP5152356B2 (ja) 2013-02-27
TW200617615A (en) 2006-06-01

Similar Documents

Publication Publication Date Title
HK1244064B (zh) 曝光裝置、曝光方法以及用於製造設備的方法
HK1219172A1 (zh) 曝光設備、曝光方法以及裝置製造方法
JP2011097121A5 (ja) 露光装置、及び方法
EP2161619B8 (en) Cleanup method and immersion lithography apparatus
EP1710630A3 (en) Lithographic apparatus and device manufacturing method
WO2005003864A3 (en) Apparatus and method for providing a confined liquid for immersion lithography
EP2624282A3 (en) Exposure apparatus, exposure method, and method for producing device
EP2466617A3 (en) Exposure apparatus and method for producing device
WO2006038952A3 (en) Projection optical device and exposure apparatus
WO2005015315A3 (de) Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum
HK1151105A1 (en) Exposure apparatus, method for producing device, and method for controlling exposure apparatus
DE602008000429D1 (de) Mikroskopvorrichtung
WO2007145725A3 (en) Immersion lithography system and method having an immersion fluid confinement plate for submerging the substrate
AU2001282015A1 (en) Small-size imaging apparatus, in particular photographic appliance or camera
EP1760528A3 (en) Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
EP1457835A3 (en) Exposure apparatus
ATE403886T1 (de) Verfahren und vorrichtung zur ausrichtung von optischen komponenten
TW200731020A (en) Methods of semiconductor exposure and controlling the semiconductor exposure apparatus
EP1770432A3 (en) Liquid crystal display device

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230731